Transistors SMD Type NPN Transistors BC818A (KC818A) SOT-23-3 Unit: mm 0.4 +0.2 2.9 -0.1 +0.1 0.4 -0.1 3 High collector current. 1 0.55 For general AF applications. +0.2 1.6 -0.1 +0.2 2.8 -0.1 Features 2 +0.02 0.15 -0.02 +0.1 0.95 -0.1 +0.1 1.9 -0.2 High current gain. 1.1 +0.2 -0.1 Low collector-emitter saturation voltage. ● Complementary PNP type available(BC808A) 1. Base 0-0.1 Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base v oltage VCBO 30 V Collector-emitter v oltage VCEO 25 V Emitter-base voltage VEBO 5 V Collector current (DC) IC 500 mA Peak collector current ICM 1 A Base current IB 100 mA power dissipation PD 310 mW Junction temperature Tj Storage temperature Tstg +0.1 0.68 -0.1 2. Emitter 3. Collector 150 -65 to +150 Electrical Characteristics Ta = 25 Parameter Symbol Test conditions Min Typ Max Unit Collector to base breakdown voltage V CBO IC = 10 A, IE = 0 30 V Collector to emitter breakdown voltage V CEO IC = 10 mA, IB = 0 25 V Emitter to base breakdown voltage VEBO IE = 10 5 A, IC = 0 V VCB = 25 V, IE = 0 100 nA Collector cutoff current ICBO VCB = 25 V, IE = 0 , TA = 150 50 A Emitter cutoff current IEBO VEB = 4 V, IC = 0 100 nA hFE IC = 100 mA, VCE = -1 V BC818A-16 DC current gain * BC818A-25 BC818A-40 100 160 250 160 250 400 250 350 630 Collector saturation voltage * VCE(sat) IC = 500 mA, IB = 50 mA 0.7 Base to emitter voltage * VBE(sat) IC = 500 mA, IB = 50 mA 1.2 Collector-base capacitance CCb Emitter-base capacitance Ceb Transition frequency * Pulsed: PW fT 350 us, duty cycle VCB = 10 V, f = 1 MHz 6 V V pF VEB = 0.5 V, f = 1 MHz 60 pF IC = 50 mA, VCE = 5 V, f = 100 MHz 170 MHz 2% Marking NO. BC818A-16 BC818A-25 BC818A-40 Marking 6E 6F 6G www.kexin.com.cn 1