AWB688 DC ~ 1500 MHz Wideband MMIC Amplifier Features DC ~ 1200 MHz, 50 Application For 30 ~ 860 MHz 50 Matching @ Vdevice = +10 V, Idd = 300 mA: 22.8 dB Gain at 500 MHz 30 dBm OP1dB 45.5 dBm Output IP3 2.2 dB NF AWB688 Package Style: SOIC8 Typical Performance (Supply Voltage = +10 V, TA = +25 C, Z0 = 50 ) Parameters Units Typical Frequency MHz 30 Applications 50 500 860 Gain dB 22.2 22.5 22.8 22.5 S11 dB -12 -13 -20 -10 dB -10 -11 -17 -10 S22 Output IP3 1) dBm 47.0 47.5 45.5 45.0 Noise Figure dB 1.7 1.8 2.2 2.1 Output P1dB dBm 27.0 29.0 30.0 30.5 Current mA 300 300 300 300 Device Voltage V +10 +10 +10 +10 Wide Band (30 ~ 860 MHz, 10 V, 300 mA) Wide Band (30 ~ 860 MHz, 12 V, 291 mA) IF (200 ~ 400 MHz, 10 V, 320 mA) 1) OIP3 is measured with two tones at an output power of +15 dBm/tone separated by 1 MHz. IF Product Specifications Parameters Units (0.3 ~ 30 MHz, 9 V, 160 mA) Min Typ. Testing Frequency MHz 500 Gain dB 22.8 S11 dB -20 S22 dB -17 Output IP3 dBm 45.5 Noise Figure dB 2.2 Output P1dB dBm 30.0 Current mA 300 Device Voltage V +10 Max Absolute Maximum Ratings Parameters Rating Operating Case Temperature -40 to 85 C Storage Temperature -40 to 150 C Device Voltage +13 V Operating Junction Temperature +150 C Input RF Power (Continuous) +22 dBm Thermal Resistance +14 C/W IF (20 ~ 1000 MHz, 11 V, 283 mA) Pin Configuration Pin No. Function 1,3,5,6,8 NC or GND 2 RF IN 7 RF OUT 4 Current Adjustable * Please find the max. input power data from http://www.asb.co.kr/pdf/Maximum_Input_Power_Analysis.pdf 1/9 ASB Inc. [email protected] Tel: +82-42-528-7225 January 2014 AWB688 DC ~ 1500 MHz Wideband MMIC Amplifier Outline Drawing Part No. Symbols ● A A1 A2 B C D D2 E E1 E2 e L y |L1-L1’| L1 AWB688 Pin No. 1 2 3 4 Dimensions (In mm) MIN NOM 1.40 1.50 0.00 ----1.45 0.33 --0.19 --4.80 --3.20 3.30 5.80 6.00 3.80 3.90 2.30 2.40 --1.27 0.40 --------0 ----1.04REF Function NC or GND RF IN NC or GND Current Adjustable MAX 1.60 0.10 --0.51 0.25 5.00 3.40 6.20 4.00 2.50 --1.27 0.10 8 0.12 Pin No. 5 6 7 Function. NC or GND NC or GND RF OUT 8 NC or GND Note: 1. Backside metal paddle is RF and DC ground. Mounting Recommendation (In mm) Note: 1. Add as much copper as possible to inner and outer layers near the part to ensure optimal thermal performance. 2. To ensure reliable operation, device ground paddle-to-ground pad soldering is critical. 3. Add mounting screws near the part to fasten the board to a heat sinker. Ensure that the ground / thermal via region contacts the heat sinker. 4. A proper heat dissipation path underneath the area of the PCB for the mounted device is strictly required for proper thermal operation. Damage to the device can result from inappropriate heat dissipation. ESD Classification HBM Class 1B Voltage Level: 500 V~1000 V MM Class A Voltage Level: <200 V CAUTION: ESD-sensitive device! Moisture Sensitivity Level (MSL) Level 3 at 260C reflow 2/9 ASB Inc. [email protected] Tel: +82-42-528-7225 January 2014 AWB688 DC ~ 1500 MHz Wideband MMIC Amplifier APPLICATION CIRCUIT Wide Band 30 ~ 860 MHz +10 V Frequency (MHz) 30 50 500 860 Magnitude S21 (dB) 22.2 22.5 22.8 22.5 Magnitude S11 (dB) -12 -13 -20 -10 Magnitude S22 (dB) -10 -11 -17 -10 Output P1dB (dBm) 27.0 29.0 30.5 30.0 Output IP31) (dBm) 47.0 47.5 45.5 45.0 Noise Figure (dB) 1.7 1.8 2.2 2.1 Device Voltage (V) +10 +10 +10 +10 Current (mA) 300 300 300 300 1) OIP3 is measured with two tones at an output power of +15 dBm/tone separated by 1 MHz. Vs=10 V Board Layout (FR4, 40x40 mm2, 0.8T) Schematic C6=10 F C5=100 pF R1 =680 C4 =1 F L1=1 H (LQH31CN1R0M03) RF IN C2=1 F AWB688 C1=1 F RF OUT L2=5.6 nH C3=2.7 pF R2=360 S-parameters & K-factor 30 0 25 -5 o 20 -40 c o 25 c o 85 c -10 15 S11 (dB) Gain (dB) o -40 c o 25 c o 85 c -15 10 -20 5 -25 0 -30 0 100 200 300 400 500 600 700 800 900 1000 1100 1200 0 100 200 300 400 Frequency (MHz) 0 700 800 900 1000 1100 1200 o -40 c o 25 c o 85 c 4 Stability Factor -10 S22 (dB) 600 5 -5 -15 -20 3 2 1 -25 -30 0 0 100 200 300 400 500 600 700 800 900 1000 1100 1200 0 500 Frequency (MHz) 3/9 500 Frequency (MHz) 1000 1500 2000 2500 3000 3500 Frequency (MHz) ASB Inc. [email protected] Tel: +82-42-528-7225 January 2014 AWB688 DC ~ 1500 MHz Wideband MMIC Amplifier Gain vs. Temperature 320 25 310 24 300 23 Gain (dB) Current (mA) Current vs. Temperature 290 Frequency = 500 MHz 21 280 270 -60 22 -40 -20 0 20 40 60 80 100 20 -60 -40 -20 0 20 40 60 80 100 o Temperature ( C) o Temperature ( C) P1dB vs. Temperature 33 P1dB (dBm) 32 31 30 Frequency = 500 MHz 29 28 -60 -40 -20 0 20 40 60 80 100 o Temperature ( C) Output IP3 vs. Tone Power (Frequency = 500 MHz) 55 o -40 c o 25 c o 85 c Output IP3 (dBm) 50 45 40 35 30 10 12 14 16 18 20 22 24 26 Pout per Tone (dBm) 4/9 ASB Inc. [email protected] Tel: +82-42-528-7225 January 2014 AWB688 DC ~ 1500 MHz Wideband MMIC Amplifier APPLICATION CIRCUIT Wide Band Frequency (MHz) 30 50 500 860 Magnitude S21 (dB) 22.5 22.5 22.0 22.6 Magnitude S11 (dB) -14 -13 -17 -10 Magnitude S22 (dB) -12 -12 -20.3 -11 Output P1dB (dBm) 30.0 31.0 31.5 30.5 1) 30 ~ 860 MHz +12 V Output IP3 (dBm) 47 46 43 43 Noise Figure (dB) 1.6 1.6 1.9 2.0 Device Voltage (V) +12 +12 +12 +12 Current (mA) 291 291 291 291 1) OIP3 is measured with two tones at an output power of +15 dBm/tone separateed by 1 MHz. Board Layout (FR4, 40x40 mm2, 0.8T) Schematic Vs=12 V C6=10 F C5=100 pF R1 =680 C4 =1 F L1=4.7 H (LQH31CN1R0M03) RF IN C2=1 F AWB688 C1=1 F RF OUT L2=5.6 nH C3=2.7 pF R2=270 30 0 25 -5 20 -10 S11 (dB) Gain (dB) S-parameters & K-factor 15 -15 10 -20 5 -25 0 -30 0 100 200 300 400 500 600 700 800 900 1000 0 100 200 300 Frequency (MHz) 400 500 600 700 800 900 1000 Frequency (MHz) 5 0 -5 4 Stability Factor S22 (dB) -10 -15 -20 3 2 1 -25 -30 0 100 200 300 400 500 600 700 800 900 1000 0 0 500 Frequency (MHz) 5/9 1000 1500 2000 2500 3000 3500 Frequency [MHz] ASB Inc. [email protected] Tel: +82-42-528-7225 January 2014 AWB688 DC ~ 1500 MHz Wideband MMIC Amplifier APPLICATION CIRCUIT IF Frequency (MHz) 200 400 Magnitude S21 (dB) 22.7 22.8 Magnitude S11 (dB) -15.0 -22.0 Magnitude S22 (dB) -15.0 -22.0 Output P1dB (dBm) 31.0 31.0 1) 200 ~ 400 MHz +10 V Output IP3 (dBm) 48.0 47.0 Noise Figure (dB) 2.0 1.8 Device Voltage (V) +10 +10 Current (mA) 320 320 1) OIP3 is measured with two tones at an output power of +15 dBm/tone separateed by 1 MHz. Board Layout (FR4, 40x40 mm2, 0.8T) Schematic 30 0 25 -5 20 -10 S11 (dB) Gain (dB) S-parameters & Noise Figure 15 -15 10 -20 5 -25 0 100 200 300 400 500 -30 100 200 300 400 500 400 500 Frequency (MHz) Frequency (MHz) 5 0 -5 4 -10 NF (dB) S22 (dB) 3 -15 2 -20 1 -25 -30 100 200 300 400 500 0 100 Frequency (MHz) 6/9 200 300 Frequency (MHz) ASB Inc. [email protected] Tel: +82-42-528-7225 January 2014 AWB688 DC ~ 1500 MHz Wideband MMIC Amplifier APPLICATION CIRCUIT IF Frequency (MHz) 0.3 30 Magnitude S21 (dB) 23 23 Magnitude S11 (dB) -21 -20 Magnitude S22 (dB) -15 -16 Output P1dB (dBm) 25.5 27.0 1) 0.3 ~ 30 MHz +9 V Output IP3 (dBm) - 44 Noise Figure (dB) 1.6 1.5 Device Voltage (V) +9 +9 Current (mA) 160 160 1) OIP3 is measured with two tones at an output power of +12 dBm/tone separateed by 1 MHz. Schematic Board Layout (FR4, 40x40 mm2, 0.8T) Vsupply=+14 V C4=10 F L2=100 H (Internal resistance = 12 C3=10 F R1=820 L1=100 H C1=10 F RF IN C2=10 F RF OUT AWB688 R2=200 30 0 25 -5 20 -10 S11 (dB) Gain (dB) S-parameters 15 -15 10 -20 5 -25 0 -30 0 10 20 30 40 0 10 20 30 40 Frequency (MHz) Frequency (MHz) 0 -5 S22 (dB) -10 -15 -20 -25 0 10 20 30 40 Frequency (MHz) 7/9 ASB Inc. [email protected] Tel: +82-42-528-7225 January 2014 AWB688 DC ~ 1500 MHz Wideband MMIC Amplifier APPLICATION CIRCUIT IF Frequency (MHz) 20 500 1000 Magnitude S21 (dB) 22.3 23.0 23.3 Magnitude S11 (dB) -12 -21 -8 Magnitude S22 (dB) -10 -17 -9 Output P1dB (dBm) 27.5 31.5 29.0 1) Output IP3 (dBm) 49.0 45.0 42.3 20 ~ 1000 MHz Output IP21) (dBm) 65 48 60 +11 V Noise Figure (dB) 1.5 1.8 2.0 Device Voltage (V) +11 +11 +11 Current (mA) 283 283 283 1) OIP3 & OIP2 is measured with two tones at an output power of +15 dBm/tone separate-ed by 1 MHz. Board Layout (FR4, 40x40 mm2, 0.8T) Schematic Vdevice=+11 V C6=10 F C5=100 pF L1=1 H (LQH31CN1R0M03) C4=1 F R1=680 C1=1 F RF IN C2=1 F RF OUT AWB688 L2=5.6 nH C3=2.7 pF R3=300 S-parameters & K-factor 0 30 -5 20 -10 S11 (dB) Gain (dB) 25 15 -15 10 -20 5 0 -25 0 200 400 600 800 1000 0 200 Frequency (MHz) 400 600 800 1000 800 1000 Frequency (MHz) 5 0 4 Stability Factor S22 (dB) -5 -10 3 2 -15 1 0 -20 0 200 400 600 800 1000 0 8/9 200 400 600 Frequency [MHz] Frequency (MHz) ASB Inc. [email protected] Tel: +82-42-528-7225 January 2014 AWB688 DC ~ 1500 MHz Wideband MMIC Amplifier Device Voltage and Current for Different Values of R2 9/9 Device Voltage (V) +8 +9 +10 +11 +12 R2 Resistance ( Current (mA) 240 159 184 208 232 257 270 177 204 231 258 283 300 195 225 254 283 310 330 215 247 278 309 336 360 231 265 300 331 357 390 247 283 318 348 371 430 271 309 344 373 394 470 292 333 368 394 510 313 354 389 560 339 381 620 367 ASB Inc. [email protected] Tel: +82-42-528-7225 January 2014