DMNH6042SPDQ 60V +175°C N-CHANNEL ENHANCEMENT MODE MOSFET ADVANCE INFORMATION Product Summary Features and Benefits BVDSS RDS(ON) Max 60V 50mΩ @ VGS = 10V 65mΩ @ VGS = 4.5V ID Max TC = +25°C 24A 21A Description and Applications This MOSFET is designed to meet the stringent requirements of automotive applications. It is qualified to AEC-Q101, supported by a PPAP and is ideal for use in: Rated to +175°C – Ideal for High Ambient Temperature Environments 100% Unclamped Inductive Switching – Ensures More Reliable and Robust End Application Low RDS(ON) – Minimizes Power Losses Low Qg – Minimiszs Switching Losses Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability PPAP Capable (Note 4) Mechanical Data Engine Management Systems Body Control Electronics DC-DC Converters Case: PowerDI5060-8 (Type C) Case Material: Molded Plastic, "Green" Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminal Connections Indicator: See Diagram Terminals: Finish Matte Tin Annealed over Copper Leadframe. Solderable per MIL-STD-202, Method 208 Weight: 0.097 grams (Approximate) D1 G1 D1 S2 D2 G2 D2 Pin1 Top View G1 G2 S1 Pin Out Top View Bottom View D2 D1 S1 S2 Equivalent Circuit Ordering Information (Note 5) Part Number DMNH6042SPDQ-13 Notes: Case PowerDI5060-8 (Type C) Packaging 2,500/Tape & Reel 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 4. Automotive products are AEC-Q101 qualified and are PPAP capable. Refer to http://www.diodes.com/product_compliance_definitions.html. 5. For packaging details, go to our website at http://www.diodes.com/products/packages.html. Marking Information D1 D1 D2 D2 = Manufacturer’s Marking H6042SD = Product Type Marking Code YYWW = Date Code Marking YY = Year (ex: 16 = 2016) WW = Week (01 to 53) H6042SD YY WW S1 DMNH6042SPDQ Document number: DS37388 Rev. 4 - 2 G1 S2 G2 1 of 7 www.diodes.com June 2016 © Diodes Incorporated DMNH6042SPDQ Maximum Ratings (@TA = +25°C, unless otherwise specified.) Characteristic Symbol ADVANCE INFORMATION Drain-Source Voltage Gate-Source Voltage VDSS Value 60 Unit V VGSS ±20 V Continuous Drain Current (Note 7) VGS = 10V Steady State TA = +25°C TA = +70°C ID 5.7 4.6 A Continuous Drain Current (Note 8) VGS = 10V Steady State TC = +25°C TC = +100°C ID 24 17 A Pulsed Drain Current (10µs Pulse, Duty Cycle = 1%) IDM 32 A Maximum Continuous Body Diode Forward Current (Note 8) IS 24 A Avalanche Current (Note 9) L = 10mH IAS 3.5 A Avalanche Energy (Note 9) L = 10mH EAS 65 mJ Thermal Characteristics (@TA = +25°C, unless otherwise specified.) Characteristic Symbol Total Power Dissipation (Note 6) Value 1.2 105 54 2.5 51 26 3.5 PD Steady state t<10s Thermal Resistance, Junction to Ambient (Note 6) RJA Total Power Dissipation (Note 7) PD Steady state t<10s Thermal Resistance, Junction to Ambient (Note 7) Thermal Resistance, Junction to Case (Note 8) RJA RJC TJ, TSTG Operating and Storage Temperature Range Unit W °C/W W °C/W -55 to +175 °C Electrical Characteristics (@TA = +25°C, unless otherwise specified.) Characteristic OFF CHARACTERISTICS (Note 10) Drain-Source Breakdown Voltage Symbol Min Typ Max BVDSS 60 — — V VGS = 0V, ID = 250μA IDSS — — 1 µA VDS = 60V, VGS = 0V IGSS — — ±100 nA VGS = ±20V, VDS = 0V VGS(TH) 1.0 — 3.0 V VDS = VGS, ID = 250μA RDS(ON) — — 34 45 50 65 mΩ Diode Forward Voltage DYNAMIC CHARACTERISTICS (Note 11) Input Capacitance VSD — 0.8 1.2 V Ciss — 584 — pF Output Capacitance Coss — 83 — pF Reverse Transfer Capacitance Crss — pF Rg — 24 3.8 — Gate Resistance — Ω Total Gate Charge (VGS = 4.5V) Qg — 4.2 — Total Gate Charge (VGS = 10V) Gate-Source Charge Qg Qgs — — 8.8 1.8 — — nC nC Zero Gate Voltage Drain Current TJ = +25°C Gate-Source Leakage ON CHARACTERISTICS (Note 10) Gate Threshold Voltage Static Drain-Source On-Resistance Gate-Drain Charge Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge Notes: Unit nC Test Condition VGS = 10V, ID = 5.1A VGS = 4.5V, ID = 4.4A VGS = 0V, IS = 2.6A VDS = 25V, VGS = 0V, f = 1.0MHz VDS = 0V, VGS = 0V, f = 1MHz VDS = 44V, ID = 5.2A Qgd — 1.8 — tD(ON) tR tD(OFF) tF tRR — — — — — 3.4 1.9 10.1 4.5 12.9 — — — — — nC ns ns ns ns ns VGS = 10V, VDS = 30V, RG = 6Ω, ID = 1A QRR — 5.4 — nC IF = 2.6A, di/dt = 100A/μs IF = 2.6A, di/dt = 100A/μs 6. Device mounted on FR-4 PC board, with minimum recommended pad layout, single sided. 7. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal bias to bottom layer 1inch square copper plate. 8. Thermal resistance from junction to soldering point (on the exposed drain pad). 9. IAS and EAS ratings are based on low frequency and duty cycles to keep TJ = +25°C. 10. Short duration pulse test used to minimize self-heating effect. 11. Guaranteed by design. Not subject to product testing. DMNH6042SPDQ Document number: DS37388 Rev. 4 - 2 2 of 7 www.diodes.com June 2016 © Diodes Incorporated DMNH6042SPDQ 20 20 VGS = 10V VDS = 5.0V VGS = 5.0V VGS = 4.0V VGS = 4.5V 14 ID, DRAIN CURRENT (A) ID, DRAIN CURRENT (A) 16 )A ( T N E R R U C N IA R D ,D I 12 10 8 VGS = 3.5V 6 15 10 TA = 175°C 5 4 VGS = 2.8V 2 TA = 150°C VGS = 3.0V 0 1 2 3 4 VDS, DRAIN-SOURCE VOLTAGE (V) Figure 1 Typical Output Characteristics ) ( E C N A T S IS E R -N O E C R U O S -N I A R D , )N 0.07 0.06 VGS = 4.5V 0.04 VGS = 10V 0.03 0.02 0.01 0 0 5 0.08 0.05 O (S D R 0 2 4 6 8 10 12 14 16 18 ID, DRAIN-SOURCE CURRENT (A) Figure 3 Typical On-Resistance vs. Drain Current and Gate Voltage RDS(ON), DRAIN-SOURCE ON-RESISTANCE () 2.2 VGS = 10V ID = 5.1A 1.8 1.6 1.4 VGS = 4.5V ID = 4.4A 1.2 1 0.8 0.6 0.4 0.2 0 -50 -25 0 25 50 75 100 125 150 175 TJ, JUNCTION TEMPERATURE (C) Figure 5 On-Resistance Variation with Temperature DMNH6042SPDQ Document number: DS37388 Rev. 4 - 2 1 3 of 7 www.diodes.com TA = -55°C 2 3 4 5 VGS , GATE-SOURCE VOLTAGE (V) Figure 2 Typical Transfer Characteristics 6 0.08 VGS = 10V 0.075 0.07 TA = 175°C TA = 150°C 0.065 TA = 125°C 0.06 0.055 TA = 85°C 0.05 0.045 0.04 TA = 25°C 0.035 0.03 0.025 TA = -55°C 0.02 0.015 0.01 20 2.4 2 TA = 85°C T A = 25°C TA = 125°C RDS(ON), DRAIN-SOURCE ON-RESISTANCE () RDS(ON), DRAIN-SOURCE ON-RESISTANCE () 0 RDS(ON), DRAIN-SOURCE ON-RESISTANCE (NORMALIZED) ADVANCE INFORMATION 18 1 3 5 7 9 11 13 15 17 19 ID, DRAIN CURRENT (A) Figure 4 Typical On-Resistance vs. Drain Current and Temperature 21 0.1 0.09 0.08 VGS = 4.5V ID = 4.4A 0.07 0.06 0.05 VGS = 10V ID = 5.1A 0.04 0.03 0.02 0.01 0 -50 -25 0 25 50 75 100 125 150 175 T J, JUNCTION TEMPERATURE ( C) Figure 6 On-Resistance Variation with Temperature June 2016 © Diodes Incorporated DMNH6042SPDQ 30 2.2 )A ( T N E R R U C E C R U O S ,S I IS, SOURCE CURRENT (A) ADVANCE INFORMATION VGS(th), GATE THRESHO LD VOLTAGE (V) 2.5 I D = 1mA 1.9 I D = 250µA 1.6 1.3 1 -50 28 26 24 22 20 18 16 14 12 10 8 6 4 2 0 -25 0 25 50 75 100 125 150 175 TJ, JUNCTION TEMPERATURE ( C) Figure 7 Gate Threshold Variation vs. Junction Temperature TA = 85°C TA = 150°C TA = 25°C TA = 125°C TA = -55°C 0 0.3 0.6 0.9 1.2 1.5 VSD , SOURCE-DRAIN VOLTAGE (V) Figure 8 Diode Forward Voltage vs. Current 1000 10000 TA = 175°C f=1MHz CJ, JUNCTION CAPACITANCE (pF) IDSS, DRAIN LEAKAGE CURRENT (nA) )A n ( 1000 T N E R R U C 100 E G A K A E 10 L N I A R D 1 ,S I TA = 175°C TA = 150°C TA = 125°C TA = 85°C TA = 25°C Ciss 100 Coss Crss S D 0.1 0 10 5 10 15 20 25 30 35 40 45 50 55 60 VDS , DRAIN-SOURCE VOLTAGE (V) Figure 9 Typical Drain-Source Leakage Current vs. Voltage 0 5 10 15 20 25 30 35 40 45 50 55 60 VDS, DRAIN-SOURCE VOLTAGE (V) Figure 10 Typical Junction Capacitance 100 10 RDS(on) Limited 8 ID, DRAIN CURRENT (A) 10 ) A ( T N E R R U 1 C N I A R D ,D 0.1 I VDS = 44V, ID = 5.2A VGS (V) 6 4 2 DC PW= 10s PW= 1s PW= 100ms P W= 10ms TJ(max) = 150°C TA = 25°C VGS = 10V Single Pulse DUT on 1 * MRP Board 0.01 0.1 0 0 2 4 6 8 10 Qg (nC) Figure 11 Gate Charge DMNH6042SPDQ Document number: DS37388 Rev. 4 - 2 4 of 7 www.diodes.com PW= 1ms PW = 100µs 1 10 VDS , DRAIN-SOURCE VOLTAGE (V) Figure 12 SOA, Safe Operation Area 100 June 2016 © Diodes Incorporated DMNH6042SPDQ 1 r(t), TRANSIENT THERMAL RESISTANCE ADVANCE INFORMATION D = 0.9 D = 0.7 D = 0.5 D = 0.3 0.1 D = 0.1 D = 0.05 D = 0.02 0.01 D = 0.01 D = 0.005 = r(t) * RJA RRθJA (t)(t) = r(t)* RθJA JA o RRθJA = 105 C/W /W = 105癈 JA Duty D =Dt1/t2 DutyCycle, Cycle, = t1/ t2 D = Single Pulse 0.001 0.00001 0.0001 DMNH6042SPDQ Document number: DS37388 Rev. 4 - 2 0.001 0.01 0.1 1 t1, PULSE DURATION TIME (sec) Figure 13 Transient Thermal Resistance 5 of 7 www.diodes.com 10 100 1000 June 2016 © Diodes Incorporated DMNH6042SPDQ Package Outline Dimensions ADVANCE INFORMATION Please see http://www.diodes.com/package-outlines.html for the latest version. PowerDI5060-8 (Type C) D D1 0(4x) c x E1 A1 E y Seating Plane e 1 01(4x) Ø 1.000 Depth 0.07± 0.030 b1(8x) DETAIL A e/2 b(8x) 1 b2(2x) D3 L k A k1 E2 D2 L4 M D2 La DETAIL A L1 PowerDI5060-8 (Type C) Dim Min Max Typ A 0.90 1.10 1.00 A1 0 0.05 0.02 b 0.33 0.51 0.41 b1 0.300 0.366 0.333 b2 0.20 0.35 0.25 c 0.23 0.33 0.277 D 5.15 BSC D1 4.85 4.95 4.90 D2 1.40 1.60 1.50 D3 3.98 E 6.15 BSC E1 5.75 5.85 5.80 E2 3.56 3.76 3.66 e 1.27BSC k 1.27 k1 0.56 L 0.51 0.71 0.61 La 0.51 0.71 0.61 L1 0.05 0.20 0.175 L4 0.125 M 3.50 3.71 3.605 x 1.400 y 1.900 θ 10° 12° 11° θ1 6° 8° 7° All Dimensions in mm Suggested Pad Layout Please see http://www.diodes.com/package-outlines.html for the latest version. PowerDI5060-8 (Type C) X4 8 Dimensions X3 Y1 X2 Y2 Y3 G1 X1 Y(4x) 1 X DMNH6042SPDQ Document number: DS37388 Rev. 4 - 2 C C G G1 X X1 X2 X3 X4 Y Y1 Y2 Y3 Value (in mm) 1.270 0.660 0.820 0.610 3.910 1.650 1.650 4.420 1.270 1.020 3.810 6.610 G 6 of 7 www.diodes.com June 2016 © Diodes Incorporated DMNH6042SPDQ ADVANCE INFORMATION IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. 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