ON ESD7008 Esd protection diode Datasheet

ESD7008, SZESD7008
ESD Protection Diodes
Low Capacitance ESD Protection for
High Speed Data
The ESD7008 ESD protection diode is designed specifically to
protect four high speed differential pairs. Ultra−low capacitance and
low ESD clamping voltage make this device an ideal solution for
protecting voltage sensitive high speed data lines. The flow−through
style package allows for easy PCB layout and matched trace lengths
necessary to maintain consistent impedance for the high speed lines.
Features
•
•
•
•
•
•
•
Integrated 4 Pairs (8 Lines) High Speed Data
Single Connect, Flow through Routing
Low Capacitance (0.12 pF Typical, I/O to GND)
Protection for the Following IEC Standards:
IEC 61000−4−2 Level 4
UL Flammability Rating of 94 V−0
SZ Prefix for Automotive and Other Applications Requiring Unique
Site and Control Change Requirements; AEC−Q101 Qualified and
PPAP Capable
This is a Pb−Free Device
Typical Applications
•
•
•
•
•
•
V−by−One HS
Thunderbolt (Light Peak)
USB 3.0
HDMI
Display Port
LVDS
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MARKING
DIAGRAM
18
1
7008MG
G
UDFN18
CASE 517BV
7008
M
G
= Specific Device Code
= Date Code
= Pb−Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
Device
Package
Shipping
ESD7008MUTAG
UDFN18
(Pb−Free)
3000 / Tape &
Reel
SZESD7008MUTAG
UDFN18
(Pb−Free)
3000 / Tape &
Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Rating
Symbol
Value
Unit
Operating Junction Temperature Range
TJ
−55 to +125
°C
Storage Temperature Range
Tstg
−55 to +150
°C
Lead Solder Temperature −
Maximum (10 Seconds)
TL
260
°C
ESD
ESD
±15
±15
kV
kV
IEC 61000−4−2 Contact (ESD)
IEC 61000−4−2 Air (ESD)
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
See Application Note AND8308/D for further description of
survivability specs.
© Semiconductor Components Industries, LLC, 2016
August, 2016 − Rev. 6
1
Publication Order Number:
ESD7008/D
ESD7008, SZESD7008
I/O
Pin 1
I/O
Pin 2
GND
Pin 3
I/O
Pin 4
GND
Pin 6
I/O
Pin 5
I/O
Pin 7
GND
Pin 9
I/O
Pin 8
GND
Pin 13
I/O
Pin 10
GND
Pin 15
Note: Only Minimum of 1 GND connection required
=
Figure 1. Pin Schematic
I/O
1
I/O
2
GND
3
I/O
4
I/O
5
GND
6
I/O
7
I/O
8
GND
9
I/O
10
I/O
11
18
N/C
17 GND
16
N/C
N/C
15 GND
14
N/C
N/C
N/C
13 GND
12
N/C
Figure 2. Pin Configuration
Note: Only minimum of one pin needs to be connected to ground for functionality of all pins. All pins labeled “N/C” should have no electrical connection.
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2
I/O
Pin 11
GND
Pin 17
ESD7008, SZESD7008
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified)
Parameter
Symbol
Reverse Working Voltage
VRWM
Breakdown Voltage
VBR
Conditions
Min
Typ
Max
Unit
5.0
V
I/O Pin to GND (Note 1)
IT = 1 mA, I/O Pin to GND
5.5
6.7
V
Reverse Leakage Current
IR
VRWM = 5 V, I/O Pin to GND
1.0
mA
Clamping Voltage (Note 1)
VC
IPP = 1 A, I/O Pin to GND (8 x 20 ms pulse)
10
V
Clamping Voltage (Note 2)
VC
IEC61000−4−2, ±8 kV Contact
Clamping Voltage
TLP (Note 3)
See Figures 8 through 11
VC
IPP = ±8 A
IPP = ±16 A
13.2
18.2
Junction Capacitance
CJ
VR = 0 V, f = 1 MHz between I/O Pins and GND
0.12
Junction Capacitance
Difference
DCJ
VR = 0 V, f = 1 MHz between I/O Pins and GND
0.02
See Figures 3 and 4
V
0.15
pF
pF
1. Surge current waveform per Figure 7.
2. For test procedure see Figures 5 and 6 and application note AND8307/D.
3. ANSI/ESD STM5.5.1 − Electrostatic Discharge Sensitivity Testing using Transmission Line Pulse (TLP) Model.
TLP conditions: Z0 = 50 W, tp = 100 ns, tr = 4 ns, averaging window; t1 = 30 ns to t2 = 60 ns.
90
0
80
−10
60
VOLTAGE (V)
VOLTAGE (V)
70
50
40
30
−20
−30
20
10
−40
0
−10
−20
0
20
40
60
80
TIME (ns)
100
120
−50
−20
140
Figure 3. IEC61000−4−2 +8 KV Contact
Clamping Voltage
0
20
40
60
80
TIME (ns)
100
120
Figure 4. IEC61000−4−2 −8 KV Contact
Clamping Voltage
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3
140
ESD7008, SZESD7008
IEC61000−4−2 Waveform
IEC 61000−4−2 Spec.
Ipeak
Level
Test Voltage (kV)
First Peak
Current
(A)
Current at
30 ns (A)
Current at
60 ns (A)
1
2
7.5
4
2
2
4
15
8
4
3
6
22.5
12
6
4
8
30
16
8
100%
90%
I @ 30 ns
I @ 60 ns
10%
tP = 0.7 ns to 1 ns
Figure 5. IEC61000−4−2 Spec
ESD Gun
Oscilloscope
TVS
50 W
Cable
50 W
Figure 6. Diagram of ESD Clamping Voltage Test Setup
The following is taken from Application Note
AND8308/D − Interpretation of Datasheet Parameters
for ESD Devices.
systems such as cell phones or laptop computers it is not
clearly defined in the spec how to specify a clamping voltage
at the device level. ON Semiconductor has developed a way
to examine the entire voltage waveform across the ESD
protection diode over the time domain of an ESD pulse in the
form of an oscilloscope screenshot, which can be found on
the datasheets for all ESD protection diodes. For more
information on how ON Semiconductor creates these
screenshots and how to interpret them please refer to
AND8307/D.
ESD Voltage Clamping
For sensitive circuit elements it is important to limit the
voltage that an IC will be exposed to during an ESD event
to as low a voltage as possible. The ESD clamping voltage
is the voltage drop across the ESD protection diode during
an ESD event per the IEC61000−4−2 waveform. Since the
IEC61000−4−2 was written as a pass/fail spec for larger
% OF PEAK PULSE CURRENT
100
PEAK VALUE IRSM @ 8 ms
tr
90
PULSE WIDTH (tP) IS DEFINED
AS THAT POINT WHERE THE
PEAK CURRENT DECAY = 8 ms
80
70
60
HALF VALUE IRSM/2 @ 20 ms
50
40
30
tP
20
10
0
0
20
40
t, TIME (ms)
60
Figure 7. 8 X 20 ms Pulse Waveform
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4
80
22
−22
20
−20
18
−18
16
−16
CURRENT (A)
CURRENT (A)
ESD7008, SZESD7008
14
12
10
8
−14
−12
−10
−8
6
−6
4
−4
2
−2
0
0
2
4
6
8
10
12
14
16
18
20
0
22
0
2
4
6
8
10
12
14
16
18
VOLTAGE (V)
VOLTAGE (V)
Figure 8. Positive TLP I−V Curve
Figure 9. Negative TLP I−V Curve
Transmission Line Pulse (TLP) Measurement
L
Transmission Line Pulse (TLP) provides current versus
voltage (I−V) curves in which each data point is obtained
from a 100 ns long rectangular pulse from a charged
transmission line. A simplified schematic of a typical TLP
system is shown in Figure 10. TLP I−V curves of ESD
protection devices accurately demonstrate the product’s
ESD capability because the 10s of amps current levels and
under 100 ns time scale match those of an ESD event. This
is illustrated in Figure 11 where an 8 kV IEC 61000−4−2
current waveform is compared with TLP current pulses at
8 A and 16 A. A TLP I−V curve shows the voltage at which
the device turns on as well as how well the device clamps
voltage over a range of current levels.
10 MW
IM
VM
DUT
VC
Oscilloscope
Figure 10. Simplified Schematic of a Typical TLP
System
Figure 11. Comparison Between 8 kV IEC 61000−4−2 and 8 A and 16 A TLP Waveforms
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5
22
50 W Coax
Cable
S Attenuator
÷
50 W Coax
Cable
20
ESD7008, SZESD7008
Without ESD
With ESD7008
Figure 12. HDMI1.4 Eye Diagram with and without ESD7008. 3.4 Gb/s, 400 mVPP
Without ESD
With ESD7008
Figure 13. USB3.0 Eye Diagram with and without ESD7008. 5.0 Gb/s, 400 mVPP
Without ESD
With ESD7008
Figure 14. Thunderbolt Eye Diagram with and without ESD7008. 10 Gb/s, 400 mVPP
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6
ESD7008, SZESD7008
S21 INSERTION LOSS (dB)
4
2
ESD7008
IO−GND
0
−2
−4
−6
−8
−10
1.E+06
1.E+07
1.E+08
1.E+09
1.E+10
FREQUENCY (Hz)
Figure 15. ESD7008 Insertion Loss
USB 3.0 Type A
Connector
StdA_SSTX+
Vbus
ESD7008
N/C
StdA_SSTX−
N/C
D−
N/C
Vbus
GND_DRAIN
N/C
Iden or N/C
N/C
D+
N/C
StdA_SSRX+
N/C
GND
StdA_SSRX−
Figure 16. USB3.0 Layout Diagram
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7
ESD7008, SZESD7008
Thunderbolt
Connector
ESD9X
GND
Hot Plug Detect
D3−
CONFIG1
ESD7008
D3+
CONFIG2
GND
GND
D2−
D0−
D2+
D0+
GND
GND
D1−
AUX_CH+
D1+
AUX_CH−
GND
DP_PWR
CONFIG 1
AUX_CH+
CONFIG 2
NUP4114
Figure 17. Thunderbolt Layout Diagram
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8
ESD7008, SZESD7008
HDMI
Type A Connector
ESD7008
D 2+
GND
D 2−
D 1+
GND
D 1−
D 0+
GND
D 0−
CLK +
GND
CLK −
CEC
N/ C (or HEC _DAT – HDMI 1.4)
SCL
SDA
GND
5V
HPD (and HEC _DAT – HDMI 1.4)
NUP4114
Figure 18. HDMI Layout Diagram
V−by−One HS
Connector
Timing Controller
ESD7008
Figure 19. V−by−One HS Layout Diagram (for LCD Panel)
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9
ESD7008, SZESD7008
PACKAGE DIMENSIONS
UDFN18, 5.5x1.5, 0.5P
CASE 517BV
ISSUE A
L2
D
PIN ONE
REFERENCE
0.10 C
2X
ÉÉ
0.10 C
2X
L
L1
E
DETAIL A
OPTIONAL
CONSTRUCTIONS
TOP VIEW
(A3)
DETAIL B
0.05 C
A
NOTE 4
A1
SIDE VIEW
C
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. DIMENSION b APPLIES TO PLATED
TERMINAL AND IS MEASURED BETWEEN
0.10 AND 0.20 MM FROM TERMINAL TIP.
4. COPLANARITY APPLIES TO THE EXPOSED
PAD AS WELL AS THE TERMINALS.
5. EXPOSED ENDS OF TERMINALS ARE
ELECTRICALLY ACTIVE.
ÉÉ
ÇÇ
ÇÇ
EXPOSED Cu
0.10 C
DETAIL A
L
A B
DIM
A
A1
A3
b
D
D2
E
E2
eA
eB
L
L1
L2
MOLD CMPD
DETAIL B
SEATING
PLANE
OPTIONAL
CONSTRUCTION
D2
eA
1
18
11
NOTE 5
E2
12
eB
18X
BOTTOM VIEW
MILLIMETERS
MIN
MAX
0.45
0.55
0.00
0.05
0.13 REF
0.15
0.25
5.50 BSC
0.45
0.55
1.50 BSC
0.35
0.45
0.50 BSC
0.75 BSC
0.20
0.40
0.00
0.05
0.10 REF
RECOMMENDED
SOLDERING FOOTPRINT*
L
b
0.10
M
C A B
0.05
M
C
1.50
PITCH
END VIEW
NOTE 3
3X
0.75
PITCH
0.60
18X
0.50
3X
0.50
1.80
0.50
PITCH
18X
0.30
DIMENSION: MILLIMETERS
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
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ESD7008/D
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