Power AP30G120ASW-HF High speed switching Datasheet

AP30G120ASW-HF
Halogen-Free Product
Advanced Power
Electronics Corp.
N-CHANNEL INSULATED GATE
BIPOLAR TRANSISTOR WITH FRD.
Features
▼ High Speed Switching
VCES
▼ Low Saturation Voltage
V CE(sat)=2.9V@IC=30A
▼ CO-PAK, IGBT With FRD
▼ RoHS Compliant & Halogen-Free
IC
1200V
30A
C
G
C
TO-3P
E
G
Absolute Maximum Ratings
Symbol
E
Parameter
Rating
Units
VCES
Collector-Emitter Voltage
1200
V
VGE
Gate-Emitter Voltage
+30
V
IC@TC=25℃
Continuous Collector Current
60
A
IC@TC=100℃
Continuous Collector Current
30
A
ICM
Pulsed Collector Current1
120
A
IF@TC=100℃
Diode Continunous Forward Current
6
A
IFM
Diode Pulse Forward Current
40
A
PD@TC=25℃
Maximum Power Dissipation
208
W
TSTG
Storage Temperature Range
-55 to 150
℃
TJ
Operating Junction Temperature Range
-55 to 150
℃
TL
Maximum Lead Temp. for Soldering Purposes
300
℃
, 1/8" from case for 5 seconds .
Notes:
1.Pulse width limited by max . junction temperature .
Thermal Data
Parameter
Symbol
Rthj-c(IGBT)
Value
Units
0.6
℃/W
Thermal Resistance Junction-Case
Rthj-c(Diode) Thermal Resistance Junction-Case
Rthj-a
Thermal Resistance Junction-Ambient
2
℃/W
40
℃/W
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol
IGES
Parameter
Gate-to-Emitter Leakage Current
Test Conditions
VGE=+30V, VCE=0V
ICES
Collector-Emitter Leakage Current
VCE=1200V, VGE=0V
-
-
1
mA
VCE(sat)
Collector-Emitter Saturation Voltage
VGE=15V, IC=30A
-
2.9
3.6
V
VGE=15V, IC=60A
-
3.7
-
V
VCE=VGE, IC=250uA
3
-
7
V
VGE(th)
Gate Threshold Voltage
Min.
-
Typ.
-
Max. Units
+500
nA
Qg
Total Gate Charge
IC=30A
-
63
100
nC
Qge
Gate-Emitter Charge
VCC=500V
-
12
-
nC
Qgc
Gate-Collector Charge
-
32
-
nC
td(on)
Turn-on Delay Time
-
40
-
ns
tr
Rise Time
-
45
-
ns
td(off)
Turn-off Delay Time
-
125
-
ns
tf
Fall Time
VGE=15V
VCC=600V,
Ic=30A,
VGE=15V,
RG=5Ω,
Inductive Load
-
430
860
ns
Eon
Turn-On Switching Loss
-
1.3
-
mJ
Eoff
Turn-Off Switching Loss
-
3.1
-
mJ
Cies
Input Capacitance
VGE=0V
-
1400
2240
pF
Coes
Output Capacitance
VCE=30V
-
120
-
pF
Cres
Reverse Transfer Capacitance
f=1.0MHz
-
15
-
pF
V
Electrical Characteristics of Diode@Tj=25℃(unless otherwise specified)
VF
Forward Voltage
IF=6A
-
2.6
3
VF
Forward Voltage
IF=20A
-
-
4
V
trr
Reverse Recovery Time
IF=10A
-
54
-
ns
Qrr
Reverse Recovery Charge
di/dt = 100 A/µs
-
138
-
nC
Data and specifications subject to change without notice
1
201412194
AP30G120ASW-HF
160
120
20V
18V
15V
IC , Collector Current (A)
120
12V
80
V GE =10V
40
20V
18V
15V
o
T C =150 C
100
IC , Collector Current (A)
o
T C =25 C
80
12V
60
V GE =10V
40
20
0
0
0
4
8
12
16
0
20
4
V CE , Collector-Emitter Voltage (V)
8
12
16
V CE , Collector-Emitter Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
120
6
V GE = 15 V
V GE =15V
VCE(sat) ,Saturation Voltage(V)
IC , Collector Current(A)
100
80
T C =25 ℃
T C =150 ℃
60
40
20
5
I C = 60 A
4
I C =30A
3
2
1
0
0
2
4
6
8
0
10
40
80
120
160
o
Junction Temperature ( C)
V CE , Collector-Emitter Voltage (V)
Fig 3. Typical Saturation Voltage
Characteristics
Fig 4. Typical Collector- Emitter Voltage
v.s. Junction Temperature
f=1.0MHz
2400
2
I C =1mA
2000
Capacitance (pF)
Normalized VGE(th)
1.6
1.2
0.8
1600
C ies
1200
800
0.4
400
C oes
C res
0
0
-50
0
50
100
o
Junction Temperature ( C )
Fig 5. Gate Threshold Voltage
150
1
5
9
13
17
21
25
29
33
37
V CE , Collector-Emitter Voltage (V)
Fig 6. Typical Capacitance Characterisitics
v.s. Junction Temperature
2
AP30G120ASW-HF
1
1000
Normalized Thermal Response (Rthjc)
V GE =15V
IC, Peak Collector Current(A)
T C =125 o C
100
10
Safe Operating Area
1
Duty factor=0.5
0.2
0.1
0.1
0.05
PDM
t
0.02
T
0.01
Duty factor = t/T
Peak Tj = PDM x Rthjc + T C
Single Pulse
0.01
1
10
100
1000
10000
0.00001
0.0001
0.001
V CE , Collector-Emitter Voltage(V)
0.01
0.1
1
t , Pulse Width (s)
Fig 7. Turn-off SOA
Fig 8. Effective Transient Thermal
Impedance
10
10
TC=150oC
VCE , Collector-Emitter Voltage(V)
VCE , Collector-Emitter Voltage(V)
o
T C =25 C
8
6
I C = 60 A
4
I C = 30 A
I C = 15 A
2
0
8
6
I C = 60 A
4
I C = 30 A
I C = 15 A
2
0
0
4
8
12
16
20
0
4
8
12
16
20
V GE , Gate-Emitter Voltage(V)
V GE , Gate-Emitter Voltage(V)
Fig 9. Saturation Voltage vs. VGE
Fig 10. Saturation Voltage vs. VGE
16
100
VGE , Gate -Emitter Voltage (V)
IF , Forward Current (A)
I C = 30 A
V CC =500V
10
T j =150 o C
T j =25 o C
1
0.1
12
8
4
0
0
1
2
3
4
0
20
40
60
V F , Forward Voltage (V)
Q G , Gate Charge (nC)
Fig11. Forward Characteristic of
Fig 12. Gate Charge Characterisitics
80
Diode
3
AP30G120ASW-HF
IC , Maximum DC Collector Current (A)
80
60
40
20
0
25
50
75
100
125
150
T C , Case Temperature ( ℃ )
Fig 13. Collector Current VS. Case
Temperature
4
AP30G120ASW-HF
MARKING INFORMATION
Part Number
Package Code : W
30G120ASW
YWWSSS
Date Code (YWWSSS)
Y:Last Digit Of The Year
WW:Week
SSS:Sequence
5
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