EGF30AH THRU EGF30MH SURFACE MOUNT GLASS PASSIVATED JUNCTION HIGH EFFICIENT RECTIFIER Reverse Voltage - 50 to 1000 Volts ED T N E T PA Forward Current - 3.0 Amperes SMB/DO-214AA FEATURES 0.150(3.80) 0.087(2.20) 0.130(3.30) 0.075(1.90) * Halogen-free type * GPRC (Glass Passivated Rectifier Chip) inside 0.187(4.75) * Glass passivated cavity-free junction 0.167(4.24) * Ideal for surface mount automotive applications * Superfast recovery time for high efficiency * Built-in strain relief * Easy pick and place o 0.016(0.40) 0.006(0.15) * High temperature soldering guaranteed: 260 C/10 seconds, at terminals 0.096(2.43) 0.079(2.00) * Plastic package has Underwriters Laboratory Flammability Classification 94V-0 0.055(1.40) 0.039(1.0) 0.236(6.00) 0.197(5.00) MECHANICAL DATA Case : JEDEC DO-214AA molded plastic over passivated chip Terminals : Tin plated, solderable per MIL-STD-750, Method 2026 *Dimensions in inches and (millimeters) Polarity : Color band denotes cathode end TM Weight : 0.004 ounes , 0.12 gram MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS o EGF30 Ratings at 25 C ambient temperature SYMBOLS unless otherwise specified. AH BH DH GH JH KH MH UNITS Maximum repetitive peak reverse voltage VRRM 50 100 200 400 600 800 1000 Volts Maximum RMS voltage VRMS 35 70 140 280 420 560 700 Volts Maximum DC blocking voltage VDC 50 100 200 400 600 800 1000 Volts Maximum average forward rectified current (SEE FIG.1) I (AV) 3.0 Amps Peak forward surge current 8.3ms single half sine-wave IFSM 115 105 Amps 1.7 Volts superimposed on rated load (JEDEC Method) Maximum instantaneous forward voltage at 3.0 A VF o 1.25 IR 5 50 120 5 120 - uA Maximum reverse recovery time (NOTE 1) trr 50 75 nS Typical junction capacitance (NOTE 2) CJ Maximum DC reverse current at rated DC blocking voltage TA=25 C o TA=125 C o TA=150 C 1.0 Typical thermal resistance (NOTE 3) Operating junction and storage temperature range R R JA JL TJ,TSTG 75 pF 47 12 o C/W o -65 to +175 C NOTES : (1) Reverse recovery test condition : IF 0.5A, IR=1.0A, Irr=0.25A (2) Measured at 1.0 MHz and applied reverse voltage of 4.0 Volts (3) Thermal resistance from junction to ambient and from junction to lead P.C.B. mounted on 0.2 x 0.2" (5.0 x 5.0mm) copper pad areas. REV. 0 Zowie Technology Corporation RATINGS AND CHARACTERISTIC CURVES EGF30AH THRU EGF30MH FIG.2 - MAXIMUM NON-REPETITIVE PEAK FORWARD SURGE CURRENT FIG.1 - FORWARD CURRENT DERATING CURVE 120 RESISTIVE OR INDUCTIVE LOAD PEAK FORWARD SURGE CURRENT, AMPERES AVERAGE FORWARD RECTIFIED CURRENT, AMPERES 3.0 2.0 1.0 90 75 EGF30JH~EGF30MH EGF30AH~EGF30GH 60 45 30 15 0 0 0 25 50 75 100 125 150 1 175 10 100 LEAD TEMPERATURE, oC NUMBER OF CYCLES AT 60Hz FIG.3 - TYPICAL INSTANTANEOUS FORWARD CHARACTERISTICS FIG.4 - TYPICAL REVERSE CHARACTERISTICS 100 10.00 PULSE WIDTH=300uS 1% DUTY CYCLE INSTANTANEOUS REVERSE LEAKAGE CURRENT, MICROAMPERES IINSTANTANEOUS FORWARD CURRENT, AMPERES 8.3ms SINGLE HALF SINE-WAVE (JEDEC Method) 105 1.00 0.10 EGF30JH~EGF30MH EGF30GH EGF30AH~EGF30DH o TJ = 150 C 1 o TJ = 25 C 0.1 0 0.01 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 o TJ = 125 C 10 20 1.8 40 60 80 100 110 PERCENT OF RATED PEAK REVERSE VOLTAGE,% INSTANTANEOUS FORWARD VOLTAGE, VOLTS FIG.5 - TYPICAL JUNCTION CAPACITANCE JUNCTION CAPACITANCE, pF 200 o TJ = 25 C 100 60 40 20 10 6 4 2 1 .1 .2 .4 1.0 2 4 10 20 40 100 REVERSE VOLTAGE, VOLTS REV. 0 Zowie Technology Corporation