AP3N4R5M
Halogen-Free Product
Advanced Power
Electronics Corp.
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
▼ Simple Drive Requirement
D
D
▼ Integrated SKY Diode
D
D
▼ Surface Mount Device
G
▼ RoHS Compliant & Halogen-Free
SO-8
S
S
BVDSS
30V
RDS(ON)
4.5mΩ
3
ID
18.7A
S
D
Description
AP3N4R5 series are from Advanced Power innovated design and
silicon process technology to achieve the lowest possible onresistance and fast switching performance. It provides the designer
with an extreme efficient device for use in a wide range of power
applications.
G
S
The SO-8 package is widely preferred for all commercial-industrial
surface mount applications using infrared reflow technique and
suited for voltage conversion or switch applications.
Absolute Maximum Ratings@Tj=25oC(unless otherwise specified)
Symbol
Parameter
VDS
Drain-Source Voltage
VGS
Gate-Source Voltage
ID@TA=25℃
ID@TA=70℃
.
Units
30
V
+20 / -12
V
3
18.7
A
3
15
A
60
A
2.5
W
Drain Current, VGS @ 10V
Drain Current, VGS @ 10V
1
IDM
Rating
Pulsed Drain Current
3
PD@TA=25℃
Total Power Dissipation
TSTG
Storage Temperature Range
-55 to 150
℃
TJ
Operating Junction Temperature Range
-55 to 150
℃
Thermal Data
Symbol
Rthj-a
Parameter
Maximum Thermal Resistance, Junction-ambient
Data and specifications subject to change without notice
3
Value
Unit
50
℃/W
1
201612191
AP3N4R5M
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol
BVDSS
RDS(ON)
Parameter
Test Conditions
Drain-Source Breakdown Voltage
Static Drain-Source On-Resistance
2
Min.
Typ.
Max. Units
VGS=0V, ID=1mA
30
-
-
V
VGS=10V, ID=16A
-
-
4.5
mΩ
VGS=4.5V, ID=12A
-
-
6
mΩ
V
VGS(th)
Gate Threshold Voltage
VDS=VGS, ID=1mA
1
-
3
gfs
Forward Transconductance
VDS=5V, ID=16A
-
60
-
S
IDSS
Drain-Source Leakage Current
VDS=24V, VGS=0V
-
-
0.5
mA
IGSS
Gate-Source Leakage
VGS=20V, VDS=0V
-
-
100
nA
Qg
Total Gate Charge
ID=12A
-
37
59.2
nC
Qgs
Gate-Source Charge
VDS=15V
-
15
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=4.5V
-
8
-
nC
td(on)
Turn-on Delay Time
VDS=15V
-
16
-
ns
tr
Rise Time
ID=1A
-
10
-
ns
td(off)
Turn-off Delay Time
RG=3.3Ω
-
64
-
ns
tf
Fall Time
VGS=10V
-
50
-
ns
Ciss
Input Capacitance
VGS=0V
-
5300 8480
pF
Coss
Output Capacitance
VDS=15V
-
1000
-
pF
Crss
Reverse Transfer Capacitance
f=1.0MHz
-
40
-
pF
Rg
Gate Resistance
f=1.0MHz
-
0.9
1.8
Ω
Min.
Typ.
.
Source-Drain Diode
Symbol
Parameter
2
Test Conditions
Max. Units
VSD
Forward On Voltage
IS=1A, VGS=0V
-
0.37
0.5
V
trr
Reverse Recovery Time
IS=16A, VGS=0V,
-
30
-
ns
Qrr
Reverse Recovery Charge
dI/dt=100A/µs
-
19
-
nC
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse test
3.Surface mounted on 1 in2 copper pad of FR4 board, t <10sec ; 125 ℃/W when mounted on min. copper pad.
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
2
AP3N4R5M
50
30
40
ID , Drain Current (A)
T A = 25 C
ID , Drain Current (A)
o
T A = 150 C
10V
7.0V
6.0V
5.0V
V G = 4.0V
o
30
20
20
10V
7.0V
6.0V
5.0V
V G = 4.0V
10
10
0
0
0
0.4
0.8
1.2
1.6
0
2
0.8
1.2
1.6
2
V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
8
2.0
I D =12A
I D = 16 A
V G =10V
6
4
.
Normalized RDS(ON)
T A =25 o C
RDS(ON) (mΩ)
0.4
V DS , Drain-to-Source Voltage (V)
1.6
1.2
0.8
2
0.4
0
2
4
6
8
-100
10
-50
0
50
100
150
T j , Junction Temperature ( o C)
V GS , Gate-to-Source Voltage (V)
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
100
10
V DS =5V
T j =25 o C
o
T j =150 C
IS(A)
ID , Drain Current (A)
80
1
60
40
T j =150 o C
T j =25 o C
20
T j = -55 o C
0.1
0
0
0.2
0.4
0.6
V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
0.8
0
1
2
3
4
5
6
V GS , Gate-to-Source Voltage (V)
Fig 6. Transfer Characteristics
Reverse Diode
3
AP3N4R5M
f=1.0MHz
8000
I D = 12 A
V DS =15V
6
6000
C (pF)
VGS , Gate to Source Voltage (V)
8
4
2
C iss
4000
2000
C oss
C rss
0
0
0
20
40
60
80
1
5
9
Q G , Total Gate Charge (nC)
13
17
21
25
29
33
37
V DS , Drain-to-Source Voltage (V)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
1
100
ID (A)
10
100us
1ms
1
10ms
100ms
0.1
1s
0.01
o
T A =25 C
Single Pulse
DC
0.001
.
Normalized Thermal Response (Rthja)
Duty factor=0.5
Operation in this area
limited by RDS(ON)
0.2
0.1
0.1
0.05
PDM
t
0.02
T
0.01
Duty factor = t/T
Peak Tj = PDM x Rthja + T a
0.01
Rthja =125℃/W
Single Pulse
0.001
0.01
0.1
1
10
100
0.0001
0.001
V DS , Drain-to-Source Voltage (V)
0.01
0.1
1
10
100
1000
t , Pulse Width (s)
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
24
VG
ID , Drain Current (A)
20
QG
4.5V
16
QGS
12
QGD
8
4
Charge
Q
0
25
50
75
100
125
150
T A , Ambient Temperature ( o C )
Fig 11. Drain Current v.s. Ambient
Temperature
Fig 12. Gate Charge Waveform
4
AP3N4R5M
20
4
o
T j =25 C
PD, Power Dissipation(W)
RDS(ON) (mΩ)
16
12
8
3
2
1
4.5V
V GS =10V
4
0
0
0
20
40
60
80
0
100
I D , Drain Current (A)
50
100
150
o
T A , Ambient Temperature( C)
Fig 13. Typ. Drain-Source on State
Resistance
Fig 14. Total Power Dissipation
.
5
AP3N4R5M
MARKING INFORMATION
Part Number
3N4R5
YWWSSS
Date Code (YWWSSS)
Y：Last Digit Of The Year
WW：Week
SSS：Sequence
.
6