AP9T15GH-HF
Halogen-Free Product
Advanced Power
Electronics Corp.
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
▼ Low Gate Charge
D
▼ Capable of 2.5V Gate Drive
▼ Simple Drive Requirement
G
▼ RoHS Compliant & Halogen-Free
BVDSS
20V
RDS(ON)
50mΩ
ID
12.5A
S
Description
AP9T15 series are from Advanced Power innovated design and
silicon process technology to achieve the lowest possible onresistance and fast switching performance. It provides the designer
with an extreme efficient device for use in a wide range of power
applications.
The TO-252 package is widely preferred for all commercialindustrial surface mount applications using infrared reflow technique
and suited for high current application due to the low connection
resistance.
G D
S
TO-252(H)
Absolute Maximum Ratings@Tj=25oC(unless otherwise specified)
Symbol
Parameter
Rating
Units
VDS
Drain-Source Voltage
20
V
VGS
Gate-Source Voltage
+16
V
ID@TC=25℃
Drain Current, VGS @ 4.5V
12.5
A
ID@TC=100℃
Drain Current, VGS @ 4.5V
8
A
60
A
12.5
W
0.1
W/℃
2
W
1
IDM
Pulsed Drain Current
PD@TC=25℃
Total Power Dissipation
Linear Derating Factor
3
PD@TA=25℃
Total Power Dissipation
TSTG
Storage Temperature Range
-55 to 150
℃
TJ
Operating Junction Temperature Range
-55 to 150
℃
Thermal Data
Symbol
Parameter
Rthj-c
Maximum Thermal Resistance, Junction-case
Rthj-a
Maximum Thermal Resistance, Junction-ambient (PCB mount)
Data and specifications subject to change without notice
3
Value
Units
10
℃/W
62.5
℃/W
1
201501265
AP9T15GH-HF
o
Electrical Characteristics@Tj=25 C(unless otherwise specified)
Symbol
BVDSS
RDS(ON)
Parameter
Test Conditions
Drain-Source Breakdown Voltage
Min.
Typ.
20
-
-
V
VGS=4.5V, ID=6A
-
-
50
mΩ
VGS=2.5V, ID=5.2A
-
-
80
mΩ
0.5
-
1.5
V
VGS=0V, ID=250uA
Static Drain-Source On-Resistance
2
Max. Units
VGS(th)
Gate Threshold Voltage
VDS=VGS, ID=250uA
gfs
Forward Transconductance
VDS=5V, ID=10A
-
10
-
S
IDSS
Drain-Source Leakage Current
VDS=20V, VGS=0V
-
-
1
uA
Drain-Source Leakage Current (T j=125 C) VDS=16V ,VGS=0V
-
-
250
uA
Gate-Source Leakage
VGS=+16V, VDS=0V
-
-
+100
nA
ID=10A
-
5
8
nC
VDS=16V
-
1
-
nC
o
IGSS
2
Qg
Total Gate Charge
Qgs
Gate-Source Charge
Qgd
Gate-Drain ("Miller") Charge
2
VGS=4.5V
-
2
-
nC
td(on)
Turn-on Delay Time
VDS=10V
-
8
-
ns
tr
Rise Time
ID=10A
-
55
-
ns
td(off)
Turn-off Delay Time
RG=3.3Ω
-
10
-
ns
tf
Fall Time
VGS=5V
-
3
-
ns
Ciss
Input Capacitance
VGS=0V
-
360
580
pF
Coss
Output Capacitance
VDS=20V
-
70
-
pF
Crss
Reverse Transfer Capacitance
f=1.0MHz
-
50
-
pF
Rg
Gate Resistance
f=1.0MHz
-
1.67
-
Ω
Min.
Typ.
IS=10A, VGS=0V
-
-
1.3
V
Source-Drain Diode
Symbol
VSD
Parameter
Forward On Voltage
2
2
Test Conditions
Max. Units
trr
Reverse Recovery Time
IS=10A, VGS=0V,
-
17
-
ns
Qrr
Reverse Recovery Charge
dI/dt=100A/µs
-
9
-
nC
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse test
2
3.Surface mounted on 1 in copper pad of FR4 board
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
2
AP9T15GH-HF
50
40
o
T C = 150 o C
T C =25 C
ID , Drain Current (A)
ID , Drain Current (A)
5.0V
4.5V
40
30
3.5V
20
2.5V
30
5.0V
4.5V
20
3.5V
10
2.5V
10
V G =1.5V
V G =1.5V
0
0
0
1
2
3
4
5
0
Fig 1. Typical Output Characteristics
2
3
4
5
6
Fig 2. Typical Output Characteristics
45
1.8
I D =6A
V G =4.5V
I D = 5.2 A
o
T C =25 C
1.6
Normalized RDS(ON)
43
RDS(ON) (mΩ)
1
V DS , Drain-to-Source Voltage (V)
V DS , Drain-to-Source Voltage (V)
41
39
37
35
1.4
1.2
1.0
0.8
33
0.6
0
2
4
6
8
10
-50
V GS , Gate-to-Source Voltage (V)
0
50
100
150
o
T j , Junction Temperature ( C)
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
2.0
10
8
Normalized VGS(th)
1.5
IS(A)
6
T j =150 o C
T j =25 o C
4
1.0
0.5
2
0
0.0
0
0.2
0.4
0.6
0.8
1
V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
1.2
-50
0
50
100
150
T j , Junction Temperature ( o C)
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
3
AP9T15GH-HF
f=1.0MHz
14
1000
I D =10A
C iss
V DS =10V
V DS =12V
V DS =16V
10
8
C (pF)
VGS , Gate to Source Voltage (V)
12
6
100
C oss
C rss
4
2
10
0
0
2
4
6
8
10
1
12
5
9
13
17
21
25
29
V DS , Drain-to-Source Voltage (V)
Q G , Total Gate Charge (nC)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
1
Normalized Thermal Response (Rthjc)
100
Operation in this
area limited by
RDS(ON)
100us
ID (A)
10
1ms
10ms
100ms
DC
1
o
T c =25 C
Single Pulse
Duty factor = 0.5
0.2
0.1
0.1
0.05
PDM
0.02
t
T
0.01
Duty Factor = t/T
Peak Tj = PDM x Rthjc + T C
Single Pulse
0.01
0.1
0.1
1
10
100
0.00001
0.0001
V DS , Drain-to-Source Voltage (V)
Fig 9. Maximum Safe Operating Area
0.001
0.01
0.1
1
10
t , Pulse Width (s)
Fig 10. Effective Transient Thermal Impedance
VG
VDS
90%
QG
4.5V
QGS
QGD
10%
VGS
td(on) tr
td(off)tf
Fig 11. Switching Time Waveform
Charge
Q
Fig 12. Gate Charge Waveform
4
AP9T15GH-HF
MARKING INFORMATION
9T15GH
Part Number
meet Rohs requirement
for low voltage MOSFET only
Package Code
YWWSSS
Date Code (YWWSSS)
Y：Last Digit Of The Year
WW：Week
SSS：Sequence
5