Fairchild FDBL86561 F085 Automotive engine control Datasheet

FDBL86561_F085
N-Channel PowerTrench® MOSFET
60 V, 300 A, 1.1 mΩ
Features
„ Typical RDS(on) = 0.85 mΩ at VGS = 10V, ID = 80 A
„ Typical Qg(tot) = 170 nC at VGS = 10V, ID = 80 A
D
„ UIS Capability
„ RoHS Compliant
„ Qualified to AEC Q101
Applications
G
„ Automotive Engine Control
„ PowerTrain Management
„ Solenoid and Motor Drivers
S
„ Integrated Starter/Alternator
For current package drawing, please refer to the Fairchild
website at http://www.fairchildsemi.com/packing_dwg/PKG‐
PSOF08A.pdf
„ Primary Switch for 12V Systems
MOSFET Maximum Ratings TJ = 25°C unless otherwise noted.
Symbol
VDSS
Drain-to-Source Voltage
VGS
ID
EAS
PD
Parameter
Gate-to-Source Voltage
Ratings
60
Units
V
±20
V
Drain Current - Continuous (VGS=10) (Note 1)
TC = 25°C
300
Pulsed Drain Current
TC = 25°C
See Figure 4
Single Pulse Avalanche Energy
(Note 2)
A
1167
mJ
Power Dissipation
429
W
Derate Above 25oC
2.86
W/oC
TJ, TSTG Operating and Storage Temperature
RθJC
Thermal Resistance, Junction to Case
RθJA
Maximum Thermal Resistance, Junction to Ambient
(Note 3)
-55 to + 175
oC
0.35
oC/W
43
oC/W
Notes:
1: Current is limited by bondwire configuration.
2: Starting TJ = 25°C, L = 0.57mH, IAS = 64A, VDD = 40V during inductor charging and VDD = 0V during time in avalanche.
3: RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance, where the case thermal reference is defined as the solder
mounting surface of the drain pins. RθJC is guaranteed by design, while RθJAis determined by the board design. The maximum rating
presented here is based on mounting on a 1 in2 pad of 2oz copper.
Package Marking and Ordering Information
Device Marking
FDBL86561
Device
FDBL86561_F085
©2015 Fairchild Semiconductor Corporation
FDBL86561_F085 Rev. C2
Package
MO-299A
-
1
-
-
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FDBL86561_F085 N-Channel PowerTrench® MOSFET
January 2015
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Units
Off Characteristics
BVDSS
Drain-to-Source Breakdown Voltage
IDSS
Drain-to-Source Leakage Current
IGSS
Gate-to-Source Leakage Current
ID = 250μA, VGS = 0V
60
-
-
V
-
-
1
μA
-
-
3
mA
-
-
±100
nA
VDS = 60V TJ = 25oC
VGS = 0V
TJ = 175oC (Note 4)
VGS = ±20V
On Characteristics
VGS(th)
RDS(on)
Gate to Source Threshold Voltage
Drain to Source On Resistance
VGS = VDS, ID = 250μA
ID = 80A,
VGS= 10V
2.0
3.0
4.0
V
-
0.85
1.1
mΩ
-
1.5
2.2
mΩ
TJ = 25oC
TJ = 175oC (Note 4)
Dynamic Characteristics
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Rg
Gate Resistance
f = 1MHz
Qg(ToT)
Total Gate Charge at 10V
VGS = 0 to 10V
Qg(th)
Threshold Gate Charge
VGS = 0 to 2V
Qgs
Gate-to-Source Gate Charge
Qgd
Gate-to-Drain “Miller“ Charge
-
VDS = 30V, VGS = 0V,
f = 1MHz
VDD = 48V
ID = 80A
-
13650
-
pF
-
3375
-
pF
-
255
-
pF
-
2.3
-
Ω
-
170
220
nC
-
24
32
nC
-
56
-
nC
24
-
nC
ns
Switching Characteristics
ton
Turn-On Time
-
-
137
td(on)
Turn-On Delay
-
45
-
ns
tr
Rise Time
-
61
-
ns
td(off)
Turn-Off Delay
-
80
-
ns
tf
Fall Time
-
41
-
ns
toff
Turn-Off Time
-
-
156
ns
V
VDD = 30V, ID = 80A,
VGS = 10V, RGEN = 6Ω
Drain-Source Diode Characteristics
VSD
Source-to-Drain Diode Voltage
trr
Reverse-Recovery Time
Qrr
Reverse-Recovery Charge
ISD =80A, VGS = 0V
-
-
1.25
ISD = 40A, VGS = 0V
-
-
1.2
V
IF = 80A, dISD/dt = 100A/μs,
VDD=48V
-
107
139
ns
-
183
265
nC
Note:
4: The maximum value is specified by design at TJ = 175°C. Product is not tested to this condition in production.
FDBL86561_F085 Rev. C2
2
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FDBL86561_F085 N-Channel PowerTrench® MOSFET
Electrical Characteristics TJ = 25°C unless otherwise noted.
1.0
ID, DRAIN CURRENT (A)
POWER DISSIPATION MULTIPLIER
500
1.2
0.8
0.6
0.4
0.2
0.0
0
25
50
75
100
125
150
TC, CASE TEMPERATURE(oC)
CURRENT LIMITED
BY PACKAGE
400
VGS = 10V
CURRENT LIMITED
BY SILICON
300
200
100
0
175
25
50
75
100
125
150
175
TC, CASE TEMPERATURE(oC)
200
Figure 2. Maximum Continuous Drain Current vs.
Case Temperature
Figure 1. Normalized Power Dissipation vs. Case
Temperature
NORMALIZED THERMAL
IMPEDANCE, ZθJC
2
1
0.1
DUTY CYCLE - DESCENDING ORDER
D = 0.50
0.20
0.10
0.05
0.02
0.01
PDM
t1
t2
NOTES:
DUTY FACTOR: D = t1/t2
PEAK TJ = PDM x ZθJC x RθJC + TC
SINGLE PULSE
0.01
-5
10
-4
10
-3
-2
-1
0
10
10
10
t, RECTANGULAR PULSE DURATION(s)
1
10
10
Figure 3. Normalized Maximum Transient Thermal Impedance
10000
IDM, PEAK CURRENT (A)
VGS = 10V
1000
TC = 25oC
FOR TEMPERATURES
100
ABOVE 25oC DERATE PEAK
CURRENT AS FOLLOWS:
I = I2
175 - TC
150
SINGLE PULSE
10
-5
10
-4
10
-3
-2
-1
10
10
10
t, RECTANGULAR PULSE DURATION(s)
0
10
1
10
Figure 4. Peak Current Capability
FDBL86561_F085 Rev. C2
3
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FDBL86561_F085 N-Channel PowerTrench® MOSFET
Typical Characteristics
2000
100
100us
OPERATION IN THIS
AREA MAY BE
LIMITED BY rDS(on)
10
1ms
1
SINGLE PULSE
TJ = MAX RATED
TC = 25oC
0.1
0.1
10ms
100ms
300
STARTING TJ = 150oC
0.01
0.1
1
10
100
1000 10000
Figure 6. Unclamped Inductive Switching
Capability
400
IS, REVERSE DRAIN CURRENT (A)
VDD = 5V
TJ = 25oC
120
TJ = 175oC
60
TJ = -55oC
2
10
NOTE: Refer to Fairchild Application Notes AN7514 and AN7515
180
0
STARTING TJ = 25oC
tAV, TIME IN AVALANCHE (ms)
PULSE DURATION = 80μs
DUTY CYCLE = 0.5% MAX
240
100
1
0.001
1
10
100 200
VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 5. Forward Bias Safe Operating Area
ID, DRAIN CURRENT (A)
If R = 0
tAV = (L)(IAS)/(1.3*RATED BVDSS - VDD)
If R ≠ 0
tAV = (L/R)ln[(IAS*R)/(1.3*RATED BVDSS - VDD) +1]
1000
IAS, AVALANCHE CURRENT (A)
ID, DRAIN CURRENT (A)
2000
1000
3
4
5
6
VGS, GATE TO SOURCE VOLTAGE (V)
VGS = 0 V
100
TJ = 175 oC
10
1
0.1
0.0
7
TJ = 25 oC
0.2
0.4
0.6
0.8
1.0
1.2
VSD, BODY DIODE FORWARD VOLTAGE (V)
Figure 7. Transfer Characteristics
Figure 8. Forward Diode Characteristics
400
400
300
5V
200
15V Top
10V
8V
7V
6V
5.5V
5V Bottom
ID, DRAIN CURRENT (A)
ID, DRAIN CURRENT (A)
VGS
80μs PULSE WIDTH
Tj=25oC
100
0
0
1
2
3
4
VDS, DRAIN TO SOURCE VOLTAGE (V)
5V
200
VGS
15V Top
10V
8V 5.5V
7V
6V
5.5V
5V Bottom
100
80μs PULSE WIDTH
Tj=175oC
0
5
Figure 9. Saturation Characteristics
FDBL86561_F085 Rev. C2
300
0
1
2
3
4
VDS, DRAIN TO SOURCE VOLTAGE (V)
5
Figure 10. Saturation Characteristics
4
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FDBL86561_F085 N-Channel PowerTrench® MOSFET
Typical Characteristics
ID = 80A
NORMALIZED
DRAIN TO SOURCE ON-RESISTANCE
rDS(on), DRAIN TO SOURCE
ON-RESISTANCE (mΩ)
20
PULSE DURATION = 80μs
DUTY CYCLE = 0.5% MAX
16
12
TJ = 175oC
TJ = 25oC
8
4
0
2
4
6
8
VGS, GATE TO SOURCE VOLTAGE (V)
10
Figure 11. RDSON vs. Gate Voltage
1.6
1.2
0.8
ID = 80A
VGS = 10V
0.4
-80
-40
0
40
80
120
160
TJ, JUNCTION TEMPERATURE(oC)
200
Figure 12. Normalized RDSON vs. Junction
Temperature
1.2
VGS = VDS
ID = 250μA
1.2
ID = 1mA
1.1
0.9
1.0
0.6
0.9
0.3
0.0
-80
-40
0
40
80
120
160
TJ, JUNCTION TEMPERATURE(oC)
0.8
-80
200
Figure 13. Normalized Gate Threshold Voltage vs.
Temperature
VGS, GATE TO SOURCE VOLTAGE(V)
10000
Ciss
1000
Coss
100
f = 1MHz
VGS = 0V
10
0.1
Crss
1
10
VDS, DRAIN TO SOURCE VOLTAGE (V)
100
Figure 15. Capacitance vs. Drain to Source
Voltage
FDBL86561_F085 Rev. C2
-40
0
40
80
120
160
TJ, JUNCTION TEMPERATURE (oC)
200
Figure 14. Normalized Drain to Source
Breakdown Voltage vs. Junction Temperature
100000
CAPACITANCE (pF)
PULSE DURATION = 80μs
DUTY CYCLE = 0.5% MAX
2.0
NORMALIZED DRAIN TO SOURCE
BREAKDOWN VOLTAGE
NORMALIZED GATE
THRESHOLD VOLTAGE
1.5
2.4
10
ID = 80A
VDD = 30V
8
VDD =24V
6
VDD = 36V
4
2
0
0
20
40
60 80 100 120 140 160 180
Qg, GATE CHARGE(nC)
Figure 16. Gate Charge vs. Gate to Source
Voltage
5
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FDBL86561_F085 N-Channel PowerTrench® MOSFET
Typical Characteristics
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Datasheet contains the design specifications for product development. Specifications
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First Production
Datasheet contains preliminary data; supplementary data will be published at a later
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Rev. I72
FDBL86561_F085 Rev. C2
6
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