DMN3021LFDF 30V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary V(BR)DSS Features ID Max RDS(ON) Max 30V TA = +25°C 15mΩ @ VGS = 10V 9.3A 20mΩ @ VGS = 4.5V 8.1A 0.6mm Profile – Ideal for Low Profile Applications 2 PCB Footprint of 4mm Low Gate Threshold Voltage Fast Switching Speed Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability Mechanical Data Description This MOSFET is designed to minimize the on-state resistance (RDS(ON)), yet maintain superior switching performance, making it Case: U-DFN2020-6 (Type F) Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminals: Finish – NiPdAu over Copper Leadframe. Solderable per MIL-STD-202, Method 208 e4 Weight: 0.007 grams (Approximate) ideal for high efficiency power management applications. Battery Management Application Power Management Functions DC-DC Converters D U-DFN2020-6 (Type F) G S Pin Out Bottom View Bottom View Top View Internal Schematic Ordering Information (Note 4) Part Number DMN3021LFDF-7 DMN3021LFDF-13 Notes: Case U-DFN2020-6 (Type F) U-DFN2020-6 (Type F) Packaging 3,000/Tape & Reel 10,000/Tape & Reel 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 4. For packaging details, go to our website at http://www.diodes.com/products/packages.html. F2 Date Code Key Year Code Month Code 2016 D Jan 1 2017 E Feb 2 DMN3021LFDF Datasheet number: DS37731 Rev. 2 - 2 Mar 3 YM Marking Information 2018 F Apr 4 F2 = Product Type Marking Code YM = Date Code Marking Y = Year (ex: D = 2016) M = Month (ex: 9 = September) 2019 G May 5 Jun 6 1 of 7 www.diodes.com 2020 H Jul 7 2021 I Aug 8 Sep 9 2022 J Oct O 2023 K Nov N Dec D July 2016 © Diodes Incorporated DMN3021LFDF Maximum Ratings (@TA = +25°C, unless otherwise specified.) Characteristic Symbol VDSS VGSS Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (Note 6) VGS = 10V Steady State TA = +25°C TA = +70°C TA = +25°C TA = +70°C t<5s Value 30 ±20 9.3 7.5 ID IDM Maximum Continuous Drain-Source Diode Forward Current (Note 6) Avalanche Current (Note 7) L = 0.1mH Repetitive Avalanche Energy (Note 7) L = 0.1mH A 11.8 9.4 50 ID Pulsed Drain Current (380μs Pulse, Duty Cycle = 1%) Unit V V A A 1.8 18 16 IS IAS EAS A A mJ Thermal Characteristics Characteristic Symbol TA = +25°C TA = +70°C Steady State t < 5s TA = +25°C TA = +70°C Steady State t < 5s Steady State Total Power Dissipation (Note 5) Thermal Resistance, Junction to Ambient (Note 5) Total Power Dissipation (Note 6) Thermal Resistance, Junction to Ambient (Note 6) Thermal Resistance, Junction to Case (Note 6) Operating and Storage Temperature Range Electrical Characteristics Value 0.73 0.47 174 112 2.03 1.30 64 40 13 -55 to +150 PD RΘJA PD RΘJA RΘJC TJ, TSTG Unit W °C/W W °C/W °C (@TA = +25°C, unless otherwise specified.) Characteristic OFF CHARACTERISTICS (Note 8) Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current TJ = +25°C Gate-Source Leakage ON CHARACTERISTICS (Note 8) Gate Threshold Voltage Symbol Min Typ Max Unit BVDSS IDSS IGSS 30 — — — — — — 1 ±100 V µA nA VGS = 0V, ID = 250μA VDS = 30V, VGS = 0V VGS = ±20V, VDS = 0V VGS(TH) 1.0 RDS(ON) — VSD — 2.2 15 20 1.2 V Static Drain-Source On-Resistance — — — 0.8 VDS = VGS, ID = 250μA VGS = 10V, ID = 7A VGS = 4.5V, ID = 7A VGS = 0V, IS = 2.2A CISS COSS CRSS RG QG QG QGS QGD tD(ON) tR tD(OFF) tF — — — — — — — — — — — — 706 112 81 2.6 14 6.7 1.9 2.5 5.4 6.8 9.7 4.7 — — — — — — — — — — — — Diode Forward Voltage DYNAMIC CHARACTERISTICS (Note 9) Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance Total Gate Charge (VGS = 10V) Total Gate Charge (VGS = 4.5V) Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Notes: mΩ V Test Condition pF VDS = 15V, VGS = 0V, f = 1.0MHz Ω VDS = 0V, VGS = 0V, f = 1MHz nC VDS = 15V, ID = 5A ns VDS = 15V, VGS = 4.5V, RG = 1.7Ω, ID = 5A 5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout. 6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1-inch square copper plate. 7. IAS and EAS rating are based on low frequency and duty cycles to keep TJ = +25°C. 8. Short duration pulse test used to minimize self-heating effect. 9. Guaranteed by design. Not subject to product testing. DMN3021LFDF Datasheet number: DS37731 Rev. 2 - 2 2 of 7 www.diodes.com July 2016 © Diodes Incorporated DMN3021LFDF 20 30.0 VGS=3.5V 25.0 16 ID, DRAIN CURRENT (A) ID, DRAIN CURRENT (A) VGS=5.0V VGS=3.0V VGS=10.0V 20.0 VDS= 5V 18 15.0 10.0 VGS=2.5V 5.0 14 12 10 8 6 125℃ 4 85℃ 25℃ 2 VGS=2.2V 0.0 150℃ 0 0 0.5 1 1.5 2 2.5 3 0 0.5 1 VDS, DRAIN-SOURCE VOLTAGE (V) Figure 1. Typical Output Characteristic RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω) RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω) 0.02 VGS=4.5V 0.015 VGS=10V 0.01 0.005 0 0 5 10 15 20 1.5 2 2.5 3 3.5 4 4.5 5 VGS, GATE-SOURCE VOLTAGE (V) Figure 2. Typical Transfer Characteristic 0.025 25 0.2 0.15 0.1 0.05 ID=7.0A 0 30 0 2 ID, DRAIN-SOURCE CURRENT (A) Figure 3. Typical On-Resistance vs. Drain Current and Gate Voltage 4 6 8 10 12 14 16 18 20 VGS, GATE-SOURCE VOLTAGE (V) Figure 4. Typical Transfer Characteristic 2.5 0.03 VGS= 4.5V 125℃ 0.025 RDS(ON), DRAIN-SOURCE ON-RESISTANCE (NORMALIZED) RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω) -55℃ 150℃ 85℃ 0.02 25℃ 0.015 -55℃ 0.01 0.005 0 0 5 10 15 20 ID, DRAIN CURRENT (A) Figure 5. Typical On-Resistance vs. Drain Current and Temperature DMN3021LFDF Datasheet number: DS37731 Rev. 2 - 2 3 of 7 www.diodes.com 2 VGS=4.5V, ID=5A 1.5 1 VGS=4.5V, ID=10A 0.5 0 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (℃) Figure 6. On-Resistance Variation with Temperature July 2016 © Diodes Incorporated 0.04 3 VGS(TH), GATE THRESHOLD VOLTAGE (V) RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω) DMN3021LFDF 0.035 0.03 0.025 0.02 VGS=4.5V, ID=10A 0.015 0.01 VGS=4.5V, ID=5A 0.005 0 -50 -25 0 25 50 75 100 125 2.5 2 ID=1mA 1.5 ID=250μA 1 0.5 0 150 -50 TJ, JUNCTION TEMPERATURE (℃) Figure 7. On-Resistance Variation with Temperature -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (℃) Figure 8. Gate Threshold Variation vs. Junction Temperature 20 10000 15 VGS=0V, TA=125℃ 10 VGS=0V, TA=85℃ VGS=0V, TA=150℃ 5 VGS=0V, TA=25℃ IDSS, LEAKAGE CURRENT (nA) IS, SOURCE CURRENT (A) 150℃ 1000 125℃ 100 85℃ 10 25℃ 1 VGS=0V, TA=-55℃ 0 0 0.3 0.6 0.9 1.2 0.1 1.5 0 VSD, SOURCE-DRAIN VOLTAGE (V) Figure 9. Diode Forward Voltage vs. Current 10 15 20 25 30 VDS, DRAIN-SOURCE VOLTAGE (V) Figure 10. Typical Drain-Source Leakage Current vs. Voltage 10000 10 f=1MHz 8 Ciss 1000 6 VGS (V) CT, JUNCTION CAPACITANCE (pF) 5 Coss VDS=15V, ID=5A 4 100 Crss 2 0 10 0 5 10 15 20 25 30 Datasheet number: DS37731 Rev. 2 - 2 3 6 9 12 15 Qg (nC) Figure 12. Gate Charge VDS, DRAIN-SOURCE VOLTAGE (V) Figure 11. Typical Junction Capacitance DMN3021LFDF 0 4 of 7 www.diodes.com July 2016 © Diodes Incorporated DMN3021LFDF 100 PW =100μs RDS(ON) Limited ID, DRAIN CURRENT (A) PW =1ms 10 1 PW =10ms PW =100ms 0.1 TJ(MAX)=150℃ PW =1s TA=25℃ Single Pulse PW =10s DUT on 1*MRP board VGS=10V 0.01 0.01 0.1 1 DC 10 100 VDS, DRAIN-SOURCE VOLTAGE (V) Figure 13. SOA, Safe Operation Area r(t), TRANSIENT THERMAL RESISTANCE 1 D=0.5 D=0.9 D=0.3 D=0.7 0.1 D=0.1 D=0.05 D=0.02 0.01 D=0.01 D=0.005 D=Single Pulse 0.001 1E-05 0.0001 RθJA(t)=r(t) * RθJA RθJA=174℃/W Duty Cycle, D=t1 / t2 0.001 0.01 0.1 1 10 100 1000 t1, PULSE DURATION TIME (sec) Figure 14. Transient Thermal Resistance DMN3021LFDF Datasheet number: DS37731 Rev. 2 - 2 5 of 7 www.diodes.com July 2016 © Diodes Incorporated DMN3021LFDF Package Outline Dimensions Please see http://www.diodes.com/package-outlines.html for the latest version. U-DFN2020-6 (Type F) A1 A A3 Seating Plane D e3 e4 k2 D2a E z2 D2 E2a E2 k1 z1 z(4x) e2 k e L b U-DFN2020-6 (Type F) Dim Min Max Typ A 0.57 0.63 0.60 A1 0.00 0.05 0.03 A3 0.15 b 0.25 0.35 0.30 D 1.95 2.05 2.00 D2 0.85 1.05 0.95 D2a 0.33 0.43 0.38 E 1.95 2.05 2.00 E2 1.05 1.25 1.15 E2a 0.65 0.75 0.70 e 0.65 BSC e2 0.863 BSC e3 0.70 BSC e4 0.325 BSC k 0.37 BSC k1 0.15 BSC k2 0.36 BSC L 0.225 0.325 0.275 z 0.20 BSC z1 0.110 BSC z2 0.20 BSC All Dimensions in mm Suggested Pad Layout Please see http://www.diodes.com/package-outlines.html for the latest version. U-DFN2020-6 (Type F) X3 C Y X Dimensions Y3 Y2 Y1 Y4 X1 Pin1 C X X1 X2 X3 Y Y1 Y2 Y3 Y4 Value (in mm) 0.650 0.400 0.480 0.950 1.700 0.425 0.800 1.150 1.450 2.300 X2 DMN3021LFDF Datasheet number: DS37731 Rev. 2 - 2 6 of 7 www.diodes.com July 2016 © Diodes Incorporated DMN3021LFDF IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. 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