A Product Line of Diodes Incorporated DMP2305UVT 20V P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Max RDS(on) V(BR)DSS -20V Features (Note 6) 60mΩ @ VGS = -4.5V 90mΩ @ VGS = -2.5V 113mΩ @ VGS = -1.8V • • • • • • Max ID TA = 25°C -4.23A -3.49A -3.11A Low Input Capacitance Low On-Resistance Fast Switching Speed Totally Lead-Free & Fully RoHS compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability Description This new generation MOSFET has been designed to minimize the onstate resistance (RDS(on)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications. • • • • Applications • • • • Mechanical Data DC-DC Converters Motor Control Power management functions Analog Switch • Case: TSOT26 Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Finish – Matte Tin annealed over Copper leadframe. Solderable per MIL-STD-202, Method 208 Weight: 0.0013 grams (approximate) D TSOT26 D 1 6 D D 2 5 D G 3 4 S G S Top View Pin-Out Top View Equivalent Circuit Ordering Information (Note 4) Part Number DMP2305UVT-7 DMP2305UVT-13 Notes: Marking 2305 2305 Reel size (inches) 7 13 Tape width (mm) 8 8 Quantity per reel 3,000 10,000 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See http://www.diodes.com for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 4. For packaging details, go to our website at http://www.diodes.com. 2305 Date Code Key Year Code Month Code 2011 Y Jan 1 2012 Z Feb 2 DMP2305UVT Document number: DS35986 Rev. 1 - 2 Mar 3 YM Marking Information 2305 = Product Type Marking Code YM = Date Code Marking Y = Year (ex: Y = 2011) M = Month (ex: 9 = September) 2013 A Apr 4 May 5 2014 B Jun 6 1 of 8 www.diodes.com 2015 C Jul 7 Aug 8 2016 D Sep 9 Oct O 2017 E Nov N Dec D August 2012 © Diodes Incorporated A Product Line of Diodes Incorporated DMP2305UVT Maximum Ratings (@TA = +25°C, unless otherwise specified.) Characteristic Symbol VDSS VGSS Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (Note 6) VGS = -4.5V Steady State Steady State Maximum Continuous Body Diode Forward Current (Note 6) Pulsed Drain Current (10μs pulse, duty cycle = 1%) Continuous Drain Current (Note 6) VGS = -2.5V TA = +25°C TA = +70°C TA = +25°C TA = +70°C ID ID IS IDM Value -20 ±8 -4.23 -2.98 -3.49 -2.79 -4.23 -16 Units V V A A A A Thermal Characteristics (@TA = +25°C, unless otherwise specified.) Characteristic Total Power Dissipation Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Case Operating and Storage Temperature Range Notes: Symbol (Note 5) (Note 6) (Note 5) (Note 6) (Note 6) PD RθJA RθJC TJ, TSTG Value 1.25 1.64 100 76 14 -55 to 150 Units W °C/W °C 5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout. 6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate. DMP2305UVT Document number: DS35986 Rev. 1 - 2 2 of 8 www.diodes.com August 2012 © Diodes Incorporated A Product Line of Diodes Incorporated DMP2305UVT Thermal Characteristics (@TA = +25°C, unless otherwise specified.) P(PK), PEAK TRANSIENT POIWER (W) 100 Single Pulse RθJA = 110° C/W RθJA(t) = r(t) * RθJA TJ - TA = P * RθJA(t) 80 60 40 20 0 0.0001 0.001 0.01 0.1 1 10 100 1,000 t1, PULSE DURATION TIME (sec) Figure 1 Single Pulse Maximum Power Dissipation r(t), TRANSIENT THERMAL RESISTANCE 1 D = 0.7 D = 0.5 D = 0.3 0.1 D = 0.1 D = 0.9 D = 0.05 D = 0.02 0.01 D = 0.01 RθJA(t) = r(t) * RθJA RθJA = 110°C/W Duty Cycle, D = t1/ t2 D = 0.005 Single Pulse 0.001 0.00001 0.0001 DMP2305UVT Document number: DS35986 Rev. 1 - 2 0.001 0.01 0.1 1 t1, PULSE DURATION TIMES (sec) Figure 2 Transient Thermal Resistance 3 of 8 www.diodes.com 10 100 1,000 August 2012 © Diodes Incorporated A Product Line of Diodes Incorporated DMP2305UVT Electrical Characteristics @TA = 25°C unless otherwise specified Characteristic OFF CHARACTERISTICS (Note 7) Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Source Leakage ON CHARACTERISTICS (Note 7) Gate Threshold Voltage Symbol Min Typ BVDSS IDSS IGSS -20 ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ -1 ±100 V µA nA VGS = 0V, ID = -250μA VDS = -20V, VGS = 0V VGS = ±8V, VDS = 0V VGS(th) RDS (ON) |Yfs| ⎯ 45 60 87 9 -0.9 60 90 113 ⎯ V Static Drain-Source On-Resistance -0.5 ⎯ ⎯ ⎯ ⎯ VDS = VGS, ID = -250μA VGS = -4.5V, ID = -4.2A VGS = -2.5V, ID = -3.4A VGS = -1.8V, ID = -2.0A VDS = -5V, ID = -4A Ciss Coss Crss RG Qg Qgs Qgd tD(on) tr tD(off) tf ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ 727 69 64 23 7.6 1.4 1.2 14.0 13.0 53.8 23.2 ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ Forward Transfer Admittance DYNAMIC CHARACTERISTICS (Note 8) Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Notes: Max Unit mΩ S Test Condition pF VDS = -20V, VGS = 0V f = 1.0MHz Ω VGS = 0V, VDS = 0V, f = 1.0MHz nC VGS = -4.5V, VDS = -4V, ID = -3.5A ns VDS = -4V, VGS = -4.5V, RL = 4Ω, RG = 6Ω, ID = -1A 7. Short duration pulse test used to minimize self-heating effect. 8. Guaranteed by design. Not subject to product testing. DMP2305UVT Document number: DS35986 Rev. 1 - 2 4 of 8 www.diodes.com August 2012 © Diodes Incorporated A Product Line of Diodes Incorporated DMP2305UVT 20 VGS = -4.5V VDS = -5V 16 -ID, DRAIN CURRENT (A) 16 -ID, DRAIN CURRENT (A) 20 VGS = -8V VGS = -3.0V VGS = -2.5V 12 VGS = -2.0V 8 12 8 TA = 150°C 4 4 T A = 125°C VGS = -1.5V 0 2 3 4 -VDS, DRAIN-SOURCE VOLTAGE (V) Figure 3 Typical Output Characteristic 5 0.08 VGS = -2.5V 0.06 0.04 VGS = -4.5V 0.02 0 0 5 10 15 -ID, DRAIN-SOURCE CURRENT (A) Figure 5 Typical On-Resistance vs. Drain Current and Gate Voltage 0 0.08 TA = 150°C 1.2 1.0 VGS = -4.5V ID = -10A 0.8 VGS = -2.5V ID = -5A TA = 85°C TA = -55°C 0.02 0 4 8 12 16 -ID, DRAIN CURRENT (A) Figure 6 Typical On-Resistance vs. Drain Current and Temperature 20 0.1 0.08 VGS = -2.5V ID = -5A 0.06 0.04 VGS = -4.5V ID = -10A 0.02 -25 0 25 50 75 100 125 150 TA, AMBIENT TEMPERATURE (°C) Figure 7 On-Resistance Variation with Temperature Document number: DS35986 Rev. 1 - 2 T A = 25°C 0.04 0.6 -50 DMP2305UVT TA = 125°C 0.06 0 RDSON, DRAIN-SOURCE ON-RESISTANCE (Ω) 1.4 3 VGS = -4.5V 20 1.6 0.5 1 1.5 2 2.5 -VGS, GATE-SOURCE VOLTAGE (V) Figure 4 Typical Transfer Characteristic 0.1 RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω) RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω) 1 0.1 RDSON, DRAIN-SOURCE ON-RESISTANCE (NORMALIZED) TA = -55°C 0 0 TA = 85°C T A = 25°C 5 of 8 www.diodes.com 0 -50 -25 0 25 50 75 100 125 150 TA, AMBIENT TEMPERATURE (°C) Figure 8 On-Resistance Variation with Temperature August 2012 © Diodes Incorporated A Product Line of Diodes Incorporated 1.0 20 0.8 16 -IS, SOURCE CURRENT (A) -VGS(TH), GATE THRESHOLD VOLTAGE (V) DMP2305UVT ID = -1mA 0.6 ID = -250µA 0.4 12 TA = 25°C 8 0.2 4 0 -50 -25 0 25 50 75 100 125 150 TA, AMBIENT TEMPERATURE (°C) Figure 9 Gate Threshold Variation vs. Ambient Temperature 0 0 0.2 0.4 0.6 0.8 1 1.2 1.4 -VSD, SOURCE-DRAIN VOLTAGE (V) Figure 10 Diode Forward Voltage vs. Current 10,000 10,000 -IDSS, LEAKAGE CURRENT (nA) C, CAPACITANCE (pF) T A = 150°C 1,000 Ciss C oss 100 Crss 1,000 T A = 125°C 100 TA = 85°C 10 TA = 25°C 1 T A = -55°C 0.1 10 0 4 8 12 16 -VDS, DRAIN-SOURCE VOLTAGE (V) Figure 11 Typical Total Capacitance DMP2305UVT Document number: DS35986 Rev. 1 - 2 20 0 2 4 6 8 10 12 14 16 18 -VDS, DRAIN-SOURCE VOLTAGE (V) 20 Figure 12 Typical Leakage Current vs. Drain-Source Voltage 6 of 8 www.diodes.com August 2012 © Diodes Incorporated A Product Line of Diodes Incorporated DMP2305UVT Package Outline Dimensions Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for latest version. D e1 E E1 L2 c 4x θ1 e L θ 6x b A A2 A1 TSOT26 Dim Min Max Typ A 1.00 − − A1 0.01 0.10 − A2 0.84 0.90 − D 2.90 − − E 2.80 − − E1 1.60 − − b 0.30 0.45 − c 0.12 0.20 − e 0.95 − − e1 1.90 − − L 0.30 0.50 L2 0.25 − − θ 0° 8° 4° θ1 4° 12° − All Dimensions in mm Suggested Pad Layout Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version. C C Y1 Y (6x) Dimensions Value (in mm) C 0.950 X 0.700 Y 1.000 Y1 3.199 X (6x) DMP2305UVT Document number: DS35986 Rev. 1 - 2 7 of 8 www.diodes.com August 2012 © Diodes Incorporated A Product Line of Diodes Incorporated DMP2305UVT IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 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