JMNIC BAP63-05W 2015 Silicon pin diode Datasheet

DISCRETE SEMICONDUCTORS
DATA SHEET
k, halfpage
M3D102
BAP63-05W
Silicon PIN diode
Product specification
Supersedes data of 2001 Apr 04
2001 May 18
Philips Semiconductors
Product specification
Silicon PIN diode
BAP63-05W
FEATURES
PINNING
• High speed switching for RF signals
PIN
DESCRIPTION
• Low diode capacitance
1
anode (a1)
• Low diode forward resistance
2
anode (a2)
• Low series inductance
3
common cathode
• For applications up to 3 GHz.
APPLICATIONS
• RF attenuators and switches.
handbook, halfpage
3
3
DESCRIPTION
1
Two planar PIN diodes in common cathode configuration
in a SOT323 small SMD plastic package.
1
2
2
Top view
MAM382
Marking code: W9-.
Fig.1 Simplified outline (SOT323) and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
Per diode
VR
continuous reverse voltage
−
50
V
IF
continuous forward current
−
100
mA
Ptot
total power dissipation
−
240
mW
Tstg
storage temperature
−65
+150
°C
Tj
junction temperature
−65
+150
°C
2001 May 18
Ts ≤ 90 °C
2
Philips Semiconductors
Product specification
Silicon PIN diode
BAP63-05W
ELECTRICAL CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
TYP.
MAX.
UNIT
Per diode
VF
forward voltage
IR
Cd
rD
|s21|2
|s21|2
|s21|2
|s21|2
|s21|2
IF = 50 mA
0.95
1.1
V
reverse current
VR = 35 V
−
10
nA
diode capacitance
VR = 0; f = 1 MHz
0.4
−
pF
VR = 1 V; f = 1 MHz
0.35
−
pF
VR = 20 V; f = 1 MHz
0.3
0.35
pF
diode forward resistance
isolation
insertion loss
insertion loss
insertion loss
insertion loss
IF = 0.5 mA; f = 100 MHz; note 1
2.5
3.5
Ω
IF = 1 mA; f = 100 MHz; note 1
1.95
3
Ω
IF = 10 mA; f = 100 MHz; note 1
1.17
1.8
Ω
IF = 100 mA; f = 100 MHz; note 1
0.9
1.5
Ω
VR = 0; f = 900 MHz
14.5
−
dB
VR = 0; f = 1800 MHz
9.5
−
dB
VR = 0; f = 2450 MHz
7.0
−
dB
IF = 0.5 mA; f = 900 MHz
0.23
−
dB
IF = 0.5 mA; f = 1800 MHz
0.27
−
dB
IF = 0.5 mA; f = 2450 MHz
0.33
−
dB
IF = 1 mA; f = 900 MHz
0.19
−
dB
IF = 1 mA; f = 1800 MHz
0.24
−
dB
IF = 1 mA; f = 2450 MHz
0.30
−
dB
IF = 10 mA; f = 900 MHz
0.14
−
dB
IF = 10 mA; f = 1800 MHz
0.19
−
dB
IF = 10 mA; f = 2450 MHz
0.25
−
dB
IF = 100 mA; f = 900 MHz
0.11
−
dB
IF = 100 mA; f = 1800 MHz
0.17
−
dB
IF = 100 mA; f = 2450 MHz
0.23
−
dB
τL
charge carrier life time
when switched from IF = 10 mA to
IR = 6 mA; RL = 100 Ω;
measured at IR = 3 mA
310
−
ns
LS
series inductance
IF = 100 mA; f = 100 MHz
1.5
−
nH
Note
1. Guaranteed on AQL basis: inspection level S4, AQL 1.0.
THERMAL CHARACTERISTICS
SYMBOL
Rth j-s
2001 May 18
PARAMETER
thermal resistance from junction to soldering point
3
VALUE
UNIT
250
K/W
Philips Semiconductors
Product specification
Silicon PIN diode
BAP63-05W
GRAPHICAL DATA
MGW126
10
MGW133
500
handbook, halfpage
handbook, halfpage
Cd
(fF)
400
rD
(Ω)
300
1
200
100
10 −1
10 −1
1
10
I F (mA)
0
102
8
12
16
20
VR (V)
f = 100 MHz; Tj = 25 °C.
Fig.2
4
0
f = 1 MHz; Tj = 25 °C.
Forward resistance as a function of
forward current; typical values.
Fig.3
Diode capacitance as a function of reverse
voltage; typical values.
MGW134
0
MGW135
0
handbook, halfpage
2
handbook, halfpage
2
| s 21|
| s 21|
(dB)
−0.1
(1)
(dB)
−10
(2)
(3)
−0.2
−20
(4)
−0.3
−30
−0.4
−0.5
0
1
(1) IF = 100 mA.
(2) IF = 10 mA.
2
f (GHz)
−40
3
2
f (GHz)
3
Diode zero biased and inserted in series with a 50 Ω stripline circuit.
Tamb = 25 °C.
Insertion loss (|s21|2) of the diode in on-state
as a function of frequency; typical values.
2001 May 18
1
(3) IF = 1 mA.
(4) IF = 0.5 mA.
Diode inserted in series with a 50 Ω stripline circuit and
biased via the analyzer Tee network.
Tamb = 25 °C.
Fig.4
0
Fig.5
4
Isolation (|s21|2) of the diode in off-state as a
function of frequency; typical values.
Philips Semiconductors
Product specification
Silicon PIN diode
BAP63-05W
PACKAGE OUTLINE
Plastic surface mounted package; 3 leads
SOT323
D
E
B
A
X
HE
y
v M A
3
Q
A
A1
c
1
2
e1
bp
Lp
w M B
e
detail X
0
1
2 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT
A
A1
max
bp
c
D
E
e
e1
HE
Lp
Q
v
w
mm
1.1
0.8
0.1
0.4
0.3
0.25
0.10
2.2
1.8
1.35
1.15
1.3
0.65
2.2
2.0
0.45
0.15
0.23
0.13
0.2
0.2
OUTLINE
VERSION
SOT323
2001 May 18
REFERENCES
IEC
JEDEC
EIAJ
SC-70
5
EUROPEAN
PROJECTION
ISSUE DATE
97-02-28
Philips Semiconductors
Product specification
Silicon PIN diode
BAP63-05W
DATA SHEET STATUS
DATA SHEET STATUS(1)
PRODUCT
STATUS(2)
DEFINITIONS
Objective data
Development
This data sheet contains data from the objective specification for product
development. Philips Semiconductors reserves the right to change the
specification in any manner without notice.
Preliminary data
Qualification
This data sheet contains data from the preliminary specification.
Supplementary data will be published at a later date. Philips
Semiconductors reserves the right to change the specification without
notice, in order to improve the design and supply the best possible
product.
Product data
Production
This data sheet contains data from the product specification. Philips
Semiconductors reserves the right to make changes at any time in order
to improve the design, manufacturing and supply. Changes will be
communicated according to the Customer Product/Process Change
Notification (CPCN) procedure SNW-SQ-650A.
Notes
1. Please consult the most recently issued data sheet before initiating or completing a design.
2. The product status of the device(s) described in this data sheet may have changed since this data sheet was
published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com.
DEFINITIONS
DISCLAIMERS
Short-form specification  The data in a short-form
specification is extracted from a full data sheet with the
same type number and title. For detailed information see
the relevant data sheet or data handbook.
Life support applications  These products are not
designed for use in life support appliances, devices, or
systems where malfunction of these products can
reasonably be expected to result in personal injury. Philips
Semiconductors customers using or selling these products
for use in such applications do so at their own risk and
agree to fully indemnify Philips Semiconductors for any
damages resulting from such application.
Limiting values definition  Limiting values given are in
accordance with the Absolute Maximum Rating System
(IEC 60134). Stress above one or more of the limiting
values may cause permanent damage to the device.
These are stress ratings only and operation of the device
at these or at any other conditions above those given in the
Characteristics sections of the specification is not implied.
Exposure to limiting values for extended periods may
affect device reliability.
Right to make changes  Philips Semiconductors
reserves the right to make changes, without notice, in the
products, including circuits, standard cells, and/or
software, described or contained herein in order to
improve design and/or performance. Philips
Semiconductors assumes no responsibility or liability for
the use of any of these products, conveys no licence or title
under any patent, copyright, or mask work right to these
products, and makes no representations or warranties that
these products are free from patent, copyright, or mask
work right infringement, unless otherwise specified.
Application information  Applications that are
described herein for any of these products are for
illustrative purposes only. Philips Semiconductors make
no representation or warranty that such applications will be
suitable for the specified use without further testing or
modification.
2001 May 18
6
Philips Semiconductors
Product specification
Silicon PIN diode
BAP63-05W
NOTES
2001 May 18
7
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SCA 72
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Printed in The Netherlands
613512/03/pp8
Date of release: 2001
May 18
Document order number:
9397 750 08263
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