TI1 CSD17484F4T 30 v n-channel femtofet mosfet Datasheet

Sample &
Buy
Product
Folder
Support &
Community
Tools &
Software
Technical
Documents
CSD17484F4
SLPS550 – MAY 2015
CSD17484F4 30 V N-Channel FemtoFET™ MOSFET
1 Features
•
•
•
•
1
•
•
•
•
Product Summary
Low On-Resistance
Ultra-Low Qg and Qgd
Low Threshold Voltage
Ultra-Small Footprint (0402 Case Size)
– 1.0 mm × 0.6 mm
Ultra-Low Profile
– 0.2 mm Height
Integrated ESD Protection Diode
– Rated >4 kV HBM
– Rated >2 kV CDM
Lead and Halogen Free
RoHS Compliant
TA = 25°C
30
V
Qg
Gate Charge Total (4.5 V)
920
pC
Qgd
Gate Charge Gate-to-Drain
VGS(th)
75
Drain-to-Source On-Resistance
pC
VGS = 1.8 V
170
mΩ
VGS = 2.5 V
125
mΩ
VGS = 4.5 V
107
mΩ
VGS = 8.0 V
99
mΩ
Threshold Voltage
0.85
V
.
Ordering Information(1)
Device
CSD17484F4
•
•
UNIT
Drain-to-Source Voltage
RDS(on)
2 Applications
•
•
TYPICAL VALUE
VDS
CSD17484F4T
Optimized for Load Switch Applications
Optimized for General Purpose Switching
Applications
Battery Applications
Handheld and Mobile Applications
Qty
Media
3000
7-Inch
Reel
250
7-Inch
Reel
Package
Ship
Femto(0402)
1.0 mm × 0.6 mm
Land Grid Array (LGA)
Tape and
Reel
(1) For all available packages, see the orderable addendum at
the end of the data sheet.
Absolute Maximum Ratings
TA = 25°C
VALUE
UNIT
VDS
Drain-to-Source Voltage
30
V
3 Description
VGS
Gate-to-Source Voltage
12
V
This 99 mΩ, 30 V N-Channel FemtoFET™ MOSFET
is designed and optimized to minimize the footprint in
many handheld and mobile applications. This
technology is capable of replacing standard small
signal MOSFETs while providing at least a 60%
reduction in footprint size.
ID
Continuous Drain Current(1)
3.0
A
IDM
Pulsed Drain Current(1)(2)
18
A
Continuous Gate Clamp Current
35
Pulsed Gate Clamp Current(2)
350
Power Dissipation
500
mW
4
kV
2
kV
–55 to 150
°C
2.5
mJ
.
Typical Part Dimensions
0.2
m
0m
IG
PD
Human Body Model (HBM)
ESD
Rating Charged Device Model (CDM)
TJ,
Tstg
Operating Junction and
Storage Temperature Range
EAS
Avalanche Energy, single pulse ID = 7.1 A,
L = 0.1 mH, RG = 25 Ω
mA
(1) Typical RθJA = 85°C/W on 1 inch2 (6.45 cm2), 2 oz.
(0.071 mm thick) Cu pad on a 0.06 inch (1.52 mm) thick FR4
PCB.
(2) Pulse duration ≤100 μs, duty cycle ≤1%
m
m
Top View
0.
60
1.
0
0
D
m
m
.
.
G
S
1
An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications,
intellectual property matters and other important disclaimers. PRODUCTION DATA.
CSD17484F4
SLPS550 – MAY 2015
www.ti.com
Table of Contents
1
2
3
4
5
Features ..................................................................
Applications ...........................................................
Description .............................................................
Revision History.....................................................
Specifications.........................................................
6.1 Trademarks ............................................................... 7
6.2 Electrostatic Discharge Caution ................................ 7
6.3 Glossary .................................................................... 7
1
1
1
2
3
7
7.1
7.2
7.3
7.4
5.1 Electrical Characteristics........................................... 3
5.2 Thermal Information .................................................. 3
5.3 Typical MOSFET Characteristics.............................. 4
6
Mechanical, Packaging, and Orderable
Information ............................................................. 8
Device and Documentation Support.................... 7
Mechanical Dimensions ............................................ 8
Recommended Minimum PCB Layout...................... 9
Recommended Stencil Pattern ................................. 9
CSD17484F4 Embossed Carrier Tape
Dimensions .............................................................. 10
4 Revision History
2
DATE
REVISION
NOTES
May 2015
*
Initial release.
Submit Documentation Feedback
Copyright © 2015, Texas Instruments Incorporated
Product Folder Links: CSD17484F4
CSD17484F4
www.ti.com
SLPS550 – MAY 2015
5 Specifications
5.1 Electrical Characteristics
(TA = 25°C unless otherwise stated)
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
STATIC CHARACTERISTICS
BVDSS
Drain-to-Source Voltage
VGS = 0 V, IDS = 250 μA
IDSS
Drain-to-Source Leakage Current
VGS = 0 V, VDS = 24 V
100
nA
IGSS
Gate-to-Source Leakage Current
VDS = 0 V, VGS = 12 V
50
nA
VGS(th)
Gate-to-Source Threshold Voltage
VDS = VGS, IDS = 250 μA
RDS(on)
gƒs
Drain-to-Source On-Resistance
Transconductance
30
0.65
V
0.85
1.10
V
VGS = 1.8 V, IDS = 0.5 A
170
270
mΩ
VGS = 2.5 V, IDS = 0.5 A
125
160
mΩ
VGS = 4.5 V, IDS = 0.5 A
107
128
mΩ
VGS = 8 V, IDS = 0.5 A
99
121
mΩ
VDS = 15 V, IDS = 0.5 A
4
S
DYNAMIC CHARACTERISTICS
Ciss
Input Capacitance
Coss
Output Capacitance
150
195
pF
44
57
Crss
Reverse Transfer Capacitance
pF
2.2
2.9
pF
RG
Series Gate Resistance
Qg
Gate Charge Total (4.5 V)
920
1200
pC
Qg
Gate Charge Total (8.0 V)
1570
2040
pC
Qgd
Gate Charge Gate-to-Drain
75
pC
Qgs
Gate Charge Gate-to-Source
280
pC
Qg(th)
Gate Charge at Vth
140
pC
Qoss
Output Charge
1400
pC
td(on)
Turn On Delay Time
3
ns
tr
Rise Time
1
ns
td(off)
Turn Off Delay Time
11
ns
tƒ
Fall Time
4
ns
VGS = 0 V, VDS = 15 V,
ƒ = 1 MHz
Ω
8
VDS = 15 V, IDS = 0.5 A
VDS = 15 V, VGS = 0 V
VDS = 15 V, VGS = 4.5 V,
IDS = 0.5 A, RG = 2 Ω
DIODE CHARACTERISTICS
VSD
Diode Forward Voltage
ISD = 0.5 A, VGS = 0 V
Qrr
Reverse Recovery Charge
trr
Reverse Recovery Time
VDS= 15 V, IF = 0.5 A, di/dt = 300 A/μs
0.73
0.9
V
1300
pC
6.2
ns
5.2 Thermal Information
(TA = 25°C unless otherwise stated)
THERMAL METRIC
RθJA
(1)
(2)
Junction-to-Ambient Thermal Resistance
(1)
Junction-to-Ambient Thermal Resistance (2)
TYPICAL VALUES
85
245
UNIT
°C/W
Device mounted on FR4 material with 1 inch2 (6.45 cm2), 2 oz. (0.071 mm thick) Cu.
Device mounted on FR4 material with minimum Cu mounting area.
Submit Documentation Feedback
Copyright © 2015, Texas Instruments Incorporated
Product Folder Links: CSD17484F4
3
CSD17484F4
SLPS550 – MAY 2015
www.ti.com
5.3 Typical MOSFET Characteristics
(TA = 25°C unless otherwise stated)
Figure 1. Transient Thermal Impedance
10
VGS = 1.8 V
VGS = 2.5 V
VGS = 3.8 V
VGS = 4.5 V
9
8
IDS - Drain-to-Source Current (A)
IDS - Drain-to-Source Current (A)
10
7
6
5
4
3
2
1
TC = 125°C
TC = 25°C
TC = -55°C
9
8
7
6
5
4
3
2
1
0
0
0
0.25
0.5
0.75
1
1.25
1.5
VDS - Drain-to-Source Voltage (V)
1.75
2
0
0.5
D002
1
1.5
2
2.5
3
VGS - Gate-to-Source Voltage (V)
3.5
4
D003
VDS = 5V
Figure 2. Saturation Characteristics
4
Submit Documentation Feedback
Figure 3. Transfer Characteristics
Copyright © 2015, Texas Instruments Incorporated
Product Folder Links: CSD17484F4
CSD17484F4
www.ti.com
SLPS550 – MAY 2015
Typical MOSFET Characteristics (continued)
(TA = 25°C unless otherwise stated)
1000
7
6
C - Capacitance (pF)
VGS - Gate-to-Source Voltage (V)
8
5
4
3
2
100
Ciss = Cgd + Cgs
Coss = Cds + Cgd
Crss = Cgd
10
1
1
0
0
0.2
0.4
0.6
0.8
1
Qg - Gate Charge (nC)
ID = 0.5 A
1.2
1.4
0
1.6
3
6
D004
30
D005
Figure 5. Capacitance
250
RDS(on) - On-State Resistance (m:)
1.15
VGS(th) - Threshold Voltage (V)
27
VDS = 15 V
Figure 4. Gate Charge
1.05
0.95
0.85
0.75
0.65
0.55
0.45
0.35
-75
9
12
15
18
21
24
VDS - Drain-to-Source Voltage (V)
TC = 25°C, I D = 0.5 A
TC = 125°C, I D = 0.5 A
225
200
175
150
125
100
75
50
-50
-25
0
25
50
75 100
TC - Case Temperature (°C)
125
150
0
175
2
D006
4
6
8
10
12
14
16
VGS - Gate-to-Source Voltage (V)
18
20
D007
ID = 250 µA
Figure 6. Threshold Voltage vs Temperature
Figure 7. On-State Resistance vs Gate-to-Source Voltage
10
1.4
VGS = 2.5 V
VGS = 4.5 V
ISD - Source-To-Drain Current (A)
Normalized On-State Resistance
1.5
1.3
1.2
1.1
1
0.9
0.8
0.7
-75
TC = 25qC
TC = 125qC
1
0.1
0.01
0.001
0.0001
-50
-25
0
25
50
75 100
TC - Case Temperature (qC)
125
150
175
0
0.2
0.4
0.6
0.8
VSD - Source-To-Drain Voltage (V)
D008
1
D009
ID = 0.5 A
Figure 8. Normalized On-State Resistance vs Temperature
Figure 9. Typical Diode Forward Voltage
Submit Documentation Feedback
Copyright © 2015, Texas Instruments Incorporated
Product Folder Links: CSD17484F4
5
CSD17484F4
SLPS550 – MAY 2015
www.ti.com
Typical MOSFET Characteristics (continued)
(TA = 25°C unless otherwise stated)
100
IAV - Peak Avalanche Current (A)
IDS - Drain-To-Source Current (A)
100
10
1
0.1
100 ms
10 ms
0.01
0.01
1 ms
100 µs
10 µs
0.1
1
10
VDS - Drain-To-Source Voltage (V)
50
TC = 25q C
TC = 125q C
10
1
0.1
0.001
0.01
0.1
TAV - Time in Avalanche (ms)
D010
1
D011
Single Pulse, Typical RθJA = 85°C/W
Figure 10. Maximum Safe Operating Area
Figure 11. Single Pulse Unclamped Inductive Switching
IDS - Drain-to-Source Current (A)
3.5
3
2.5
2
1.5
1
0.5
0
-50
-25
0
25
50
75
100 125
TA - Ambient Temperature (°C)
150
175
D012
Figure 12. Maximum Drain Current vs Temperature
6
Submit Documentation Feedback
Copyright © 2015, Texas Instruments Incorporated
Product Folder Links: CSD17484F4
CSD17484F4
www.ti.com
SLPS550 – MAY 2015
6 Device and Documentation Support
6.1 Trademarks
FemtoFET is a trademark of Texas Instruments.
All other trademarks are the property of their respective owners.
6.2 Electrostatic Discharge Caution
These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam
during storage or handling to prevent electrostatic damage to the MOS gates.
6.3 Glossary
SLYZ022 — TI Glossary.
This glossary lists and explains terms, acronyms, and definitions.
Submit Documentation Feedback
Copyright © 2015, Texas Instruments Incorporated
Product Folder Links: CSD17484F4
7
CSD17484F4
SLPS550 – MAY 2015
www.ti.com
7 Mechanical, Packaging, and Orderable Information
The following pages include mechanical, packaging, and orderable information. This information is the most
current data available for the designated devices. This data is subject to change without notice and revision of
this document. For browser-based versions of this data sheet, refer to the left-hand navigation.
7.1 Mechanical Dimensions
(1)
All linear dimensions are in millimeters (dimensions and tolerancing per AME T14.5M-1994).
(2)
This drawing is subject to change without notice.
(3)
This package is a PB-free solder land design.
Pin Configuration
Position
8
Designation
Pin 1
Gate
Pin 2
Source
Pin 3
Drain
Submit Documentation Feedback
Copyright © 2015, Texas Instruments Incorporated
Product Folder Links: CSD17484F4
CSD17484F4
www.ti.com
SLPS550 – MAY 2015
7.2 Recommended Minimum PCB Layout
(1)
All dimensions are in millimeters.
7.3 Recommended Stencil Pattern
(1)
All dimensions are in millimeters.
Submit Documentation Feedback
Copyright © 2015, Texas Instruments Incorporated
Product Folder Links: CSD17484F4
9
CSD17484F4
SLPS550 – MAY 2015
www.ti.com
7.4 CSD17484F4 Embossed Carrier Tape Dimensions
(1)
10
Pin 1 is oriented in the top-right quadrant of the tape enclosure (quadrant 2), closest to the carrier tape sprocket
holes.
Submit Documentation Feedback
Copyright © 2015, Texas Instruments Incorporated
Product Folder Links: CSD17484F4
PACKAGE OPTION ADDENDUM
www.ti.com
29-Jun-2015
PACKAGING INFORMATION
Orderable Device
Status
(1)
Package Type Package Pins Package
Drawing
Qty
Eco Plan
Lead/Ball Finish
MSL Peak Temp
(2)
(6)
(3)
Op Temp (°C)
Device Marking
(4/5)
CSD17484F4
ACTIVE
PICOSTAR
YJJ
3
3000
Green (RoHS
& no Sb/Br)
Call TI
Level-1-260C-UNLIM
-55 to 150
G2
CSD17484F4T
ACTIVE
PICOSTAR
YJJ
3
250
Green (RoHS
& no Sb/Br)
Call TI
Level-1-260C-UNLIM
-55 to 150
G2
(1)
The marketing status values are defined as follows:
ACTIVE: Product device recommended for new designs.
LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.
NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design.
PREVIEW: Device has been announced but is not in production. Samples may or may not be available.
OBSOLETE: TI has discontinued the production of the device.
(2)
Eco Plan - The planned eco-friendly classification: Pb-Free (RoHS), Pb-Free (RoHS Exempt), or Green (RoHS & no Sb/Br) - please check http://www.ti.com/productcontent for the latest availability
information and additional product content details.
TBD: The Pb-Free/Green conversion plan has not been defined.
Pb-Free (RoHS): TI's terms "Lead-Free" or "Pb-Free" mean semiconductor products that are compatible with the current RoHS requirements for all 6 substances, including the requirement that
lead not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, TI Pb-Free products are suitable for use in specified lead-free processes.
Pb-Free (RoHS Exempt): This component has a RoHS exemption for either 1) lead-based flip-chip solder bumps used between the die and package, or 2) lead-based die adhesive used between
the die and leadframe. The component is otherwise considered Pb-Free (RoHS compatible) as defined above.
Green (RoHS & no Sb/Br): TI defines "Green" to mean Pb-Free (RoHS compatible), and free of Bromine (Br) and Antimony (Sb) based flame retardants (Br or Sb do not exceed 0.1% by weight
in homogeneous material)
(3)
MSL, Peak Temp. - The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder temperature.
(4)
There may be additional marking, which relates to the logo, the lot trace code information, or the environmental category on the device.
(5)
Multiple Device Markings will be inside parentheses. Only one Device Marking contained in parentheses and separated by a "~" will appear on a device. If a line is indented then it is a continuation
of the previous line and the two combined represent the entire Device Marking for that device.
(6)
Lead/Ball Finish - Orderable Devices may have multiple material finish options. Finish options are separated by a vertical ruled line. Lead/Ball Finish values may wrap to two lines if the finish
value exceeds the maximum column width.
Important Information and Disclaimer:The information provided on this page represents TI's knowledge and belief as of the date that it is provided. TI bases its knowledge and belief on information
provided by third parties, and makes no representation or warranty as to the accuracy of such information. Efforts are underway to better integrate information from third parties. TI has taken and
continues to take reasonable steps to provide representative and accurate information but may not have conducted destructive testing or chemical analysis on incoming materials and chemicals.
TI and TI suppliers consider certain information to be proprietary, and thus CAS numbers and other limited information may not be available for release.
Addendum-Page 1
Samples
PACKAGE OPTION ADDENDUM
www.ti.com
29-Jun-2015
In no event shall TI's liability arising out of such information exceed the total purchase price of the TI part(s) at issue in this document sold by TI to Customer on an annual basis.
Addendum-Page 2
IMPORTANT NOTICE
Texas Instruments Incorporated and its subsidiaries (TI) reserve the right to make corrections, enhancements, improvements and other
changes to its semiconductor products and services per JESD46, latest issue, and to discontinue any product or service per JESD48, latest
issue. Buyers should obtain the latest relevant information before placing orders and should verify that such information is current and
complete. All semiconductor products (also referred to herein as “components”) are sold subject to TI’s terms and conditions of sale
supplied at the time of order acknowledgment.
TI warrants performance of its components to the specifications applicable at the time of sale, in accordance with the warranty in TI’s terms
and conditions of sale of semiconductor products. Testing and other quality control techniques are used to the extent TI deems necessary
to support this warranty. Except where mandated by applicable law, testing of all parameters of each component is not necessarily
performed.
TI assumes no liability for applications assistance or the design of Buyers’ products. Buyers are responsible for their products and
applications using TI components. To minimize the risks associated with Buyers’ products and applications, Buyers should provide
adequate design and operating safeguards.
TI does not warrant or represent that any license, either express or implied, is granted under any patent right, copyright, mask work right, or
other intellectual property right relating to any combination, machine, or process in which TI components or services are used. Information
published by TI regarding third-party products or services does not constitute a license to use such products or services or a warranty or
endorsement thereof. Use of such information may require a license from a third party under the patents or other intellectual property of the
third party, or a license from TI under the patents or other intellectual property of TI.
Reproduction of significant portions of TI information in TI data books or data sheets is permissible only if reproduction is without alteration
and is accompanied by all associated warranties, conditions, limitations, and notices. TI is not responsible or liable for such altered
documentation. Information of third parties may be subject to additional restrictions.
Resale of TI components or services with statements different from or beyond the parameters stated by TI for that component or service
voids all express and any implied warranties for the associated TI component or service and is an unfair and deceptive business practice.
TI is not responsible or liable for any such statements.
Buyer acknowledges and agrees that it is solely responsible for compliance with all legal, regulatory and safety-related requirements
concerning its products, and any use of TI components in its applications, notwithstanding any applications-related information or support
that may be provided by TI. Buyer represents and agrees that it has all the necessary expertise to create and implement safeguards which
anticipate dangerous consequences of failures, monitor failures and their consequences, lessen the likelihood of failures that might cause
harm and take appropriate remedial actions. Buyer will fully indemnify TI and its representatives against any damages arising out of the use
of any TI components in safety-critical applications.
In some cases, TI components may be promoted specifically to facilitate safety-related applications. With such components, TI’s goal is to
help enable customers to design and create their own end-product solutions that meet applicable functional safety standards and
requirements. Nonetheless, such components are subject to these terms.
No TI components are authorized for use in FDA Class III (or similar life-critical medical equipment) unless authorized officers of the parties
have executed a special agreement specifically governing such use.
Only those TI components which TI has specifically designated as military grade or “enhanced plastic” are designed and intended for use in
military/aerospace applications or environments. Buyer acknowledges and agrees that any military or aerospace use of TI components
which have not been so designated is solely at the Buyer's risk, and that Buyer is solely responsible for compliance with all legal and
regulatory requirements in connection with such use.
TI has specifically designated certain components as meeting ISO/TS16949 requirements, mainly for automotive use. In any case of use of
non-designated products, TI will not be responsible for any failure to meet ISO/TS16949.
Products
Applications
Audio
www.ti.com/audio
Automotive and Transportation
www.ti.com/automotive
Amplifiers
amplifier.ti.com
Communications and Telecom
www.ti.com/communications
Data Converters
dataconverter.ti.com
Computers and Peripherals
www.ti.com/computers
DLP® Products
www.dlp.com
Consumer Electronics
www.ti.com/consumer-apps
DSP
dsp.ti.com
Energy and Lighting
www.ti.com/energy
Clocks and Timers
www.ti.com/clocks
Industrial
www.ti.com/industrial
Interface
interface.ti.com
Medical
www.ti.com/medical
Logic
logic.ti.com
Security
www.ti.com/security
Power Mgmt
power.ti.com
Space, Avionics and Defense
www.ti.com/space-avionics-defense
Microcontrollers
microcontroller.ti.com
Video and Imaging
www.ti.com/video
RFID
www.ti-rfid.com
OMAP Applications Processors
www.ti.com/omap
TI E2E Community
e2e.ti.com
Wireless Connectivity
www.ti.com/wirelessconnectivity
Mailing Address: Texas Instruments, Post Office Box 655303, Dallas, Texas 75265
Copyright © 2016, Texas Instruments Incorporated
Similar pages