ALM-42316 (3.3 – 5)V Linear Wireless Data Power Amplifier for (3.3 - 3.8)GHz Operation Data Sheet Description Features Avago Technologies’ ALM-42316 is a fully-matched Power amplifier module for use in the (3.3-3.8)GHz band. High linear output power at 3.3V is achieved through the use of Avago Technologies’ proprietary 0.25um GaAs Enhancement-mode pHEMT process. It is housed in a miniature 5.0 x 5.0 x 1.1mm MCOB module. It includes shutdown and switchable gain functions. A detector is also included onchip. The compact footprint and low profile coupled with high gain and high efficiency make the ALM-42316 an ideal choice as a power amplifier for IEEE 802.16 (Wimax) and WLL applications. • High Efficiency of 14.5% at low 3.3V supply voltage Applications • High linearity amplifier for IEEE 802.16 mobile and fixed terminal amplifier • High gain : 30dB • High linearity performance : 23dBm at 2.5% EVM (64 QAM ¾ FEC rate OFDMA). • Broadband Fully-matched 50 Ohm input and output impedances • 45dBc 2nd harmonic attenuation • Built-in detector and shutdown switches • Switchable gain : 18 dB attenuation using one single CMOS compatible switch pin • GaAs E-pHEMT Technology[1] • Low cost small package size: 5.0 x 5.0 x 1.1 mm3 • WLL amplifier • Useable at 5V supplies for higher output power Component Image Specifications 5.0 x 5.0 x 1.1 mm3 MCOB 3.5GHz; 3.3V, Iqtotal=240 mA (typ) Notes: Package marking provides orientation and identification "42316” = Device Part Number “WWYY” = Work week and Year “XXXX” = Assembly lot number 42316 WWYY XXXX • 30 dB Gain • 23dBm linear Pout (2.5% EVM, 64QAM OFDMA) • 24.5dBm linear Pout (2.5% EVM, 64QAM OFDMA) @ Vdd=5V • P1dB : 30.5dBm • Detector range : 10dB (0.3V – 2.0V) TOP VIEW • 18 dB switchable gain attenuation Pin Configuration • Shutdown current : < 20uA VDD3 VDD2 VDD1 Notes: 1. Enhancement mode technology employs positive Vgs, thereby eliminating the need of negative gate voltage associated with conventional depletion mode devices. 1 RFIN RFOUT VBYPS VDET VBIAS VCTRL TOP VIEW Attention: Observe precautions for handling electrostatic sensitive devices. ESD Machine Model = 40 V ESD Human Body Model = 250 V Refer to Avago Application Note A004R: Electrostatic Discharge, Damage and Control. Absolute Maximum Rating [1] TA=25°C Symbol Parameter Units Absolute Max. Vdd, Vddbias Supply voltages, bias supply voltage V 5.5 Vc Control Voltage V (Vdd) Pin,max CW RF Input Power dBm +12 Pdiss Total Power Dissipation [3] W 4.4 Tj Junction Temperature °C 150 TSTG Storage Temperature °C -65 to 150 Thermal Resistance [2,3] (Vdd = 3.3V, Id=240mA), θjc = 28 °C/W Notes: 1. Operation of this device in excess of any of these limits may cause permanent damage. 2. Thermal resistance measured using Infra-Red Measurement Technique. 3. Board temperature (TB) is 25 °C , for TB >25 °C derate the device power at 30mW per °C rise in Board (package belly) temperature. Electrical Specifications TA = 25 °C, Vdd =3.3V, Iqtotal = 240mA, RF performance at 3.5 GHz, IEEE 802.16e 64-QAM, ¾ rate FEC, OFDMA operation unless otherwise stated. Vbyp = 0V. Symbol Parameter and Test Condition Units Vdd Supply Voltage Iqtotal Quiescent Supply Current (normal high gain mode) [5] mA 240 Quiescent Supply Current (bypass mode, Vbyp = 3.3V) mA 200 freq Input Frequency Range GHz 3.3 Vc Control voltage required for Iqtotal=240mA V 1.6 2 Gain Gain dB 27.5 29.7 OP1dB Output Power at 1dB Gain Compression dBm Plin Linear Output power at 2.5%EVM (normal gain mode) dBm Ilintotal Total current draw at Plin level [4] mA 417 S11 Input Return Loss, 50Ω source dB -15 S22 Output Return Loss, 50Ω load dB -11 S12 Reverse Isolation dB 45 2Fc Second harmonic attenuation dBc 45 Atten Gain attenuation in bypass mode dB 18 Vdet Detector output DC voltage at Plin V 1.6 DetR Detector RF dynamic range dB 10 S Stability under load VSWR of 6:1 (all phase) dBc Typ. Max. 3.3 Notes: 4. Current is measured during ON portion of amplifier using 50% downlink ratio, IEEE 802.16e modulation. 5. Iq(total) is defined as the sum of all quiescent currents flowing into pins Vdd1, Vdd2, Vdd3, Vddbias. Min. 3.8 2.5 30.5 21.5 23 490 -55 Product Consistency Distribution Charts [ 1] Figure 1a. Linear Pout Distribution (normal gain mode) Figure 1b . Gain Distribution (normal gain mode) Figure 1c. Vc Distribution for Iq(total)=240mA Figure 1d. Gain Distribution (bypass mode) Notes: 1. Distribution data sample size are 500 samples taken from 3 different wafers and 3 different lots. Future wafers allocated to this product may have nominal values anywhere between the upper and lower limits. Figure 2. Demo board circuit for ALM-42316 module Notes: C1, C2, C7 : 3.9 pF, 0402 ceramic chip capacitor C3, C4 : 0.1uF 0402 ceramic chip capacitor C5 : 100pF 0402 ceramic chip capacitor C6 : 2.2 uF 0805 ceramic chip capacitor Vdd3 Vdd2 Vdd1 C6 C3 C4 C5 RFinput RFoutput MATCH MATCH MATCH MATCH C1 C2 Bypass SWITCH & Bias Vbyp C7 Vc Vddbias Vdet Figure 3. Application circuit in demoboard Notes: 1. In normal gain mode operation, Vbyp = 0V. Vc is a bias pin that is used to set the bias conditions to the 3 internal gain stages of the PA. 2. Typical quiescent current distribution with Vdd1=Vdd2=Vdd3 = 3.3V, Vbyp = 0V, Vc = 2.0V is : a. Idd1 = 40 mA b. Idd2 = 118 mA c. Idd3 = 65 mA d. I_Vddbias = 17mA 3. Bypass mode is enabled by setting Vbyp pin to 3.3V. This condition overrides the normal high gain mode operation and bypasses the first gain stage, regardless of the voltage at Vc1 pin. The first gain stage is also shut down to reduce current consumption in this mode. 4. Modulated signal measurements are made with Agilent 89600 VSA and Agilent ESG4438C signal generator with IEEE 802.16e option using the following test conditions : - Signal format : IEEE 802.16e OFDMA, ¾ rate FEC - Modulation : 64-QAM - Numher of Subcarriers : 840 - Modulation bandwidth : 10 MHz - Downlink ratio : 50% Residual distortion of signal generator : (0.6-0.8)%. This distortion is included in the overall EVM data in the datasheet. 5. Typical operating voltages and currents : a. Normal gain mode : Vdd1 = Vdd2 = Vdd3 = Vddbias = 3.3V. Vc = 2.0V. Vbyp = 0V. Iq(total) = 240 mA. b. Bypass mode : Vdd1 = Vdd2 = Vdd3 = Vddbias = 3.3V. Vc = 2.0V. Vbyp = 3.3V. Iq(total) = 200 mA. Unless otherwise stated, all measurements are made at Vdd=+3.3V, Iq(total)=240mA. Vc (typ) = 2.0V Figure 4. Small-signal performance in high-gain mode, Vdd = 3.3V Figure 5. Small-signal performance in high-gain mode, Vdd = 5V) Figure 6. Small-signal performance in bypass mode, Vdd = 3.3V Figure 7. Small-signal performance in bypass mode, Vdd = 5V Gain (dB) . 1000 900 29 800 28 700 27 600 500 26 400 25 Gain_3.3GHz_85C 300 Gain_3.5GHz_85C 24 Gain_3.8GHz_85C 200 Idd_3.3GHz_85C 23 Idd_3.5GHz_85C 100 Idd_3.8GHz_85C 22 0 10 12 14 16 18 20 22 24 26 28 30 32 Pout (dBm) . Idd_total (mA) Gain (dB) . 30 Figure 12. CW Gain vs Pout @ 85°C, high-gain mode, Vdd = 3.3V . Idd_total (mA) Figure 11. CW Gain vs Pout @ -30°C, high-gain mode, Vdd = 5 V 1200 34 33 1000 32 31 800 30 29 600 28 400 Gain_3.3GHz_-30C 27 Gain_3.5GHz_-30C Gain_3.8GHz_-30C 26 200 Idd_3.3GHz_-30C Idd_3.5GHz_-30C 25 Idd_3.8GHz_-30C 24 0 10 12 14 16 18 20 22 24 26 28 30 32 34 36 Pout (dBm) Figure 13. CW Gain vs Pout @ 85°C, high-gain mode, Vdd = 5V . Idd_total (mA) Figure 10. CW Gain vs Pout @ -30°C, high-gain mode, Vdd = 3.3V 34 1200 33 1000 32 31 800 30 29 600 28 400 27 Gain_3.3GHz_-30C Gain_3.5GHz_-30C Gain_3.8GHz_-30C 26 200 Idd_3.3GHz_-30C Idd_3.5GHz_-30C 25 Idd_3.8GHz_-30C 24 0 10 12 14 16 18 20 22 24 26 28 30 32 34 36 Pout (dBm) . Idd_total (mA) 1000 900 800 700 600 500 400 300 Gain_3.3GHz_-30C Gain_3.5GHz_-30C Gain_3.8GHz_-30C 200 Idd_3.3GHz_-30C Idd_3.5GHz_-30C 100 Idd_3.8GHz_-30C 0 10 12 14 16 18 20 22 24 26 28 30 32 Pout (dBm) Gain (dB) . 32 31 30 29 28 27 26 25 24 23 22 1200 34 33 1000 32 31 800 30 29 600 28 400 Gain_3.3GHz_25C 27 Gain_3.5GHz_25C Gain_3.8GHz_25C 26 Idd_3.3GHz_25C 200 Idd_3.5GHz_25C 25 Idd_3.8GHz_25C 24 0 10 12 14 16 18 20 22 24 26 28 30 32 34 36 Pout (dBm) Figure 9. CW Gain vs Pout @ 25°C, high-gain mode, Vdd = 5V . Idd_total (mA) Gain (dB) . Figure 8 .CW Gain vs Pout @ 25°C, high-gain mode, Vdd = 3.3V Gain (dB) . 1000 900 800 700 600 500 400 Gain_3.3GHz_25C 300 Gain_3.5GHz_25C Gain_3.8GHz_25C 200 Idd_3.3GHz_25C Idd_3.5GHz_25C 100 Idd_3.8GHz_25C 0 10 12 14 16 18 20 22 24 26 28 30 32 Pout (dBm) . Idd_total (mA) Gain (dB) . 32 31 30 29 28 27 26 25 24 23 22 EVM_3.3GHz_85C EVM_3.5GHz_85C EVM_3.8GHz_85C Idd_3.3GHz_85C Idd_3.5GHz_85C Idd_3.8GHz_85C 14.0 16.0 18.0 20.0 Pout (dBm) 500 450 400 350 300 250 200 150 100 50 0 22.0 24.0 26.0 Figure 18. EVM vs Pout @ 85°C, High-gain mode, Vdd = 3.3 . 6.0 5.5 5.0 4.5 4.0 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0.0 10.0 12.0 . Idd_total (mA) EVM (%) . . Idd_total (mA) Figure 17. EVM vs Pout @ -30°C, High-gain mode, Vdd = 5V Idd_total (mA) EVM (%) . Figure 16. EVM vs Pout @ -30°C, High-gain mode, Vdd = 3.3V 6.0 600 EVM_3.3GHz_-30C 5.5 EVM_3.5GHz_-30C 5.0 500 EVM_3.8GHz_-30C Idd_3.3GHz_-30C 4.5 Idd_3.5GHz_-30C 4.0 400 Idd_3.8GHz_-30C 3.5 3.0 300 2.5 2.0 200 1.5 1.0 100 0.5 0.0 0 10.0 12.0 14.0 16.0 18.0 20.0 22.0 24.0 26.0 28.0 Pout (dBm) 6.0 5.5 5.0 4.5 4.0 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0.0 600 EVM_3.3GHz_85C EVM_3.5GHz_85C EVM_3.8GHz_85C Idd_3.3GHz_85C Idd_3.5GHz_85C Idd_3.8GHz_85C 500 400 300 200 100 0 10.0 12.0 14.0 16.0 18.0 20.0 22.0 24.0 26.0 28.0 Pout (dBm) Figure 19. EVM vs Pout @ 85°C, High-gain mode, Vdd = 5V Idd_total (mA) 14.0 16.0 18.0 20.0 Pout (dBm) 500 450 400 350 300 250 200 150 100 50 0 22.0 24.0 26.0 EVM (%) . EVM_3.3GHz_-30C EVM_3.5GHz_-30C EVM_3.8GHz_-30C Idd_3.3GHz_-30C Idd_3.5GHz_-30C Idd_3.8GHz_-30C Idd_total (mA) 6.0 5.5 5.0 4.5 4.0 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0.0 10.0 12.0 Figure 15. EVM vs Pout @ 25°C, High-gain mode, Vdd = 5V . EVM (%) . Figure 14. EVM vs Pout @ 25°C, High-gain mode, Vdd = 3.3V 6.0 600 EVM_3.3GHz_25C 5.5 EVM_3.5GHz_25C 5.0 500 EVM_3.8GHz_25C Idd_3.3GHz_25C 4.5 Idd_3.5GHz_25C 4.0 400 Idd_3.8GHz_25C 3.5 3.0 300 2.5 2.0 200 1.5 1.0 100 0.5 0.0 0 10.0 12.0 14.0 16.0 18.0 20.0 22.0 24.0 26.0 28.0 Pout (dBm) EVM (%) . 14.0 16.0 18.0 20.0 Pout (dBm) 500 450 400 350 300 250 200 150 100 50 0 22.0 24.0 26.0 . EVM_3.3GHz_25C EVM_3.5GHz_25C EVM_3.8GHz_25C Idd_3.3GHz_25C Idd_3.5GHz_25C Idd_3.8GHz_25C Idd_total (mA) EVM (%) . 6.0 5.5 5.0 4.5 4.0 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0.0 10.0 12.0 Figure 20. Spectral mask at Pout = 22.2 dBm, Freq= 3.5GHz, normal gain mode, Vdd = 3.3V, Temperature = 25°C Fig 21. Spectral mask at Pout = 24.7 dBm meeting specs, Freq=3.5GHz, normal gain mode, Vdd = 5V, Temperature = 25°C 3.5 VDET (V) . 2.5 3.0 VDET_3.3GHz_25 VDET_3.5GHz_25 VDET_3.8GHz_25 2.5 VDET (V) . 3.0 3.5 2.0 1.5 1.5 1.0 0.5 0.5 14.0 16.0 18.0 20.0 Pout (dBm) 22.0 24.0 26.0 Figure 22. Detector vs Pout, normal gain mode, Vdd = 3.3V, Temperature = 25°C 2.0 1.0 0.0 10.0 12.0 VDET_3.3GHz_25 VDET_3.5GHz_25 VDET_3.8GHz_25 0.0 10.0 12.0 14.0 16.0 18.0 20.0 22.0 24.0 26.0 28.0 30.0 Pout (dBm) Figure 23. Detector vs Pout, normal gain mode, Vdd = 5V, Temperature = 25°C Pin 1 5.00±0.10 0.60 (6x0.73 pitch) =4.38 0.73 13x-0.40 sq 1 1 42316 WWYY XXXX 5.00±0.10 1.86 1.05±0.100 Side View 3.38 1 0.08 1 0.11 (All Corner) 1 0.07 (All gaps) Bottom View Figure 24. Package Drawing dimensions Note : 1. ALL DIMENSIONS ARE IN MILIMETERS 2. DIMENSIONS ARE INCLUSIVE OF PLATING 3. DIMENSIONS ARE EXCLUSIVE OF MOLD FLASH AND METAL BURR. PCB Land Pateern (Top View) Combined PCB and Stencil Layout All Dimensions are in mm Figure 25. PC board and stencil design 10 2 0.2x45° 1.13 0.16 1 0.19 2 4x- 0.10 1 1 0.19 Top View 2 2 Stencil Outline 6x- 0.40 Device Orientation REEL USER FEED DIRECTION CARRIER TAPE USER FEED DIRECTION 42316 WWYY XXXX 42316 WWYY XXXX 42316 WWYY XXXX TOP VIEW END VIEW COVER TAPE Tape Dimensions Part Number Ordering Information 11 Part Number No. of Devices Container ALM-42316-BLKG 100 Antistatic Bag ALM-42316-TR1G 1000 7” Reel ALM-42316-TR2G 3000 13” Reel Reel Dimensions - 7 Inch Ø178.0 ± 1.0 Front Back See Detail “X” FRONT VIEW 65˚ 7.9 - 10.9** + 1.5* 8.4 - 0.0 45˚ R10.65 R5.2 Front Back 60˚ Ø55.0 ± 0.5 Slot Hole ‘B’ Slot Hole ‘A’ Embossed Ribs Raised: 0.25mm, Width: 1.25mm BACK VIEW 12 Ø15.2 ± 0.3 14.4* Max. Ø178.0 ± 1.0 Recycle Logo Reel Dimensions - 13 Inch 11 12 1 2 3 4 0 2 10 9 7 6 5 DATE CODE 12MM 8 EMBOSSED LETTERING 16.0mm HEIGHT x MIN. 0.4mm THICK. Ø329.0±1.0 HUB Ø100.0±0.5 6 PS 02 12 12 10 911 876534 MP N CPN EMBOSSED LETTERING 7.5mm HEIGHT EMBOSSED LETTERING 7.5mm HEIGHT 1.5 (MI N.) FRONT VIEW EMBOSSED LINE (2x) 89.0mm LENGTH LINES 147.0mm AWAY FROM CENTER POINT +0.5 -0.2 20.2(MIN.) Ø13.0 11.9-15.4** +2.0* 12.4 -0.0 Ø16.0 ESD LOGO 6 PS RECYCLE LOGO Detail "X" SEE DETAIL "X" Ø100.0±0.5 Ø329.0±1.0 6 PS R19.0±0.5 BACK VIEW SLOT 5.0±0.5(3x) Ø12.3±0.5(3x) For product information and a complete list of distributors, please go to our web site: 18.4 MAX.* www.avagotech.com Avago, Avago Technologies, and the A logo are trademarks of Avago Technologies Limited in the United States and other countries. Data subject to change. Copyright © 2005-2008 Avago Technologies Limited. All rights reserved. AV02-1111EN - May 5, 2008