PHILIPS BYV415K-600P Dual ultrafast power diode Datasheet

TO
3P
BYV415K-600P
Dual ultrafast power diode
24 December 2014
Product data sheet
1. General description
Dual ultrafast power diode in a SOT1259 (3-lead TO-3P) plastic package.
2. Features and benefits
•
•
•
•
Very low on-state loss
Fast switching
Low leakage current
Low thermal resistance
3. Applications
•
•
Active PFC in air conditioner
Interleaved PFC topology in switched-mode power supplies
4. Quick reference data
Table 1.
Quick reference data
Symbol
Parameter
VRRM
repetitive peak reverse
voltage
IF(AV)
average forward
current
Conditions
Min
Typ
Max
Unit
-
-
600
V
-
-
15
A
IF = 15 A; Tj = 150 °C; Fig. 6
-
1.1
1.4
V
IF = 1 A; VR = 30 V; dIF/dt = 100 A/µs;
-
25
50
ns
δ = 0.5; Tmb ≤ 126 °C; square-wave
pulse; Fig. 1; Fig. 2; Fig. 3
Static characteristics
VF
forward voltage
Dynamic characteristics
trr
reverse recovery time
Tj = 25 °C; Fig. 7
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Dual ultrafast power diode
5. Pinning information
Table 2.
Pinning information
Pin
Symbol Description
Simplified outline
1
A1
anode 1
2
K
cathode
3
A2
anode 2
mb
mb
mounting base; connected to
cathode
Graphic symbol
A1
A2
K
1
2
sym125
3
TO3P (SOT1259)
6. Ordering information
Table 3.
Ordering information
Type number
BYV415K-600P
Package
Name
Description
Version
TO3P
Plastic single-ended package; heatsink mounted; 1 mounting
hole; 3-lead TO3P
SOT1259
7. Marking
Table 4.
Marking codes
Type number
Marking code
BYV415K-600P
BYV415K-600P
BYV415K-600P
Product data sheet
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NXP Semiconductors
Dual ultrafast power diode
8. Limiting values
Table 5.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
VRRM
Conditions
Min
Max
Unit
repetitive peak reverse voltage
-
600
V
VRWM
crest working reverse voltage
-
600
V
VR
reverse voltage
DC
-
600
V
IF(AV)
average forward current
δ = 0.5; Tmb ≤ 126 °C; square-wave
-
15
A
-
30
A
-
15
A
-
140
A
-
155
A
pulse; Fig. 1; Fig. 2; Fig. 3
IO(AV)
average output current
δ = 0.5; Tmb ≤ 126 °C; square-wave
pulse; both diodes conducting
IFRM
repetitive peak forward current
δ = 0.5; tp = 25 µs; Tmb ≤ 126 °C;
Square-ware pulse
IFSM
non-repetitive peak forward
current
tp = 10 ms; Tj(init) = 25 °C; sine-wave
pulse; per diode; Fig. 4
tp = 8.3 ms; Tj(init) = 25 °C; sine-wave
pulse; per diode; Fig. 4
Tstg
storage temperature
-65
175
°C
Tj
junction temperature
-
175
°C
aaa-015103
40
Ptot
(W)
δ=1
2.2
2.8
15
4.0
0.2
0.1
10
10
Fig. 1.
1.9
20
0.5
0
a = 1.57
Ptot
(W)
30
20
aaa-015107
25
5
0
5
10
15
0
20
25
IF(AV) (A)
0
5
10
IF(AV) = IF(RMS) × √δ
a = form factor = I F(RMS) / IF(AV)
Vo = 1.135 V; Rs = 0.017 Ω
Vo = 1.135 V; Rs = 0.017 Ω
Forward power dissipation as a function of
average forward current; square waveform;
maximum values
BYV415K-600P
Product data sheet
Fig. 2.
15
Forward power dissipation as a function of
average forward current; sinusoidal waveform;
maximum values
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IF(AV) (A)
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NXP Semiconductors
Dual ultrafast power diode
aaa-015108
20
IF(AV)
(A)
126 °C
aaa-015109
104
IFSM
(A)
15
103
10
102
IF
IFSM
5
0
-50
Fig. 3.
0
50
100
10
10-5
150
200
Tmb (°C)
Forward current as a function of mounting base Fig. 4.
temperature; maximum values
BYV415K-600P
Product data sheet
t
tp
Tj(init) = 25 °C max
10-3
tp (s)
10-2
Non-repetitive peak forward current as a
function of pulse width; sinusoidal waveform;
maximum values
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Dual ultrafast power diode
9. Thermal characteristics
Table 6.
Thermal characteristics
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
Rth(j-mb)
thermal resistance
from junction to
mounting base
with heatsink compound; per diode;
Fig. 5
-
1.2
2
K/W
with heatsink compound; both diodes
conducting
-
0.65
1.2
K/W
thermal resistance
from junction to
ambient
in free air
-
45
-
K/W
Rth(j-a)
aaa-014272
10
Zth(j-mb)
(K/W)
1
10-1
δ = 0.5
δ = 0.3
10-2
δ = 0.1
P
δ=
δ = 0.05
10-3
Fig. 5.
T
single pulse
tp
10-4
10-6
tp
10-5
10-4
10-3
10-2
10-1
1
t
T
tp (s)
10
Transient thermal impedance from junction to mounting base as a function of pulse duration
BYV415K-600P
Product data sheet
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10. Characteristics
Table 7.
Characteristics
characteristics are per diode unless otherwise stated
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
IF = 15 A; Tj = 25 °C; Fig. 6
-
1.4
2.1
V
IF = 15 A; Tj = 150 °C; Fig. 6
-
1.1
1.4
V
VR = 600 V; Tj = 25 °C
-
-
10
µA
VR = 600 V; Tj = 150 °C
-
-
500
µA
IF = 15 A; VR = 400 V; dIF/dt = 200 A/
-
125
-
nC
-
318
-
nC
-
25
50
ns
-
45
-
ns
-
65
-
ns
-
34
-
ns
-
5.5
-
A
-
9.7
-
A
Static characteristics
VF
IR
forward voltage
reverse current
Dynamic characteristics
Qr
recovered charge
µs; Tj = 25 °C; Fig. 7
IF = 15 A; VR = 400 V; dIF/dt = 200 A/
µs; Tj = 125 °C; Fig. 7
trr
reverse recovery time
IF = 1 A; VR = 30 V; dIF/dt = 100 A/µs;
Tj = 25 °C; Fig. 7
IF = 15 A; VR = 400 V; dIF/dt = 200 A/
µs; Tj = 25 °C; Fig. 7
IF = 15 A; VR = 400 V; dIF/dt = 200 A/
µs; Tj = 125 °C; Fig. 7
IF = 15 A; VR = 400 V; dIF/dt = 500 A/
µs; Tj = 25 °C; Fig. 7
IRM
peak reverse recovery
current
IF = 15 A; VR = 400 V; dIF/dt = 200 A/
µs; Tj = 25 °C; Fig. 7
IF = 15 A; VR = 400 V; dIF/dt = 200 A/
µs; Tj = 125 °C; Fig. 7
BYV415K-600P
Product data sheet
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BYV415K-600P
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Dual ultrafast power diode
aaa-015110
40
IF
IF
(A)
dlF
dt
30
trr
(1)
20
(2)
(3)
time
25 %
Qr
10
IR
0
100 %
IRM
003aac562
0
1
2
VF (V)
3
Fig. 7.
Reverse recovery definitions; ramp recovery
Vo = 1.135 V; Rs = 0.017 Ω
(1) Tj = 150 °C; typical values
(2) Tj = 150 °C; maximum values
(3) Tj = 25 °C; maximum values
Fig. 6.
Forward current as a function of forward
voltage
BYV415K-600P
Product data sheet
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Dual ultrafast power diode
11. Package outline
Plastic single-ended package; heatsink mounted; 1 mounting hole; 3-lead TO3P
SOT1259
D
D1
A
c1
D2
H
Ø2
Ø1
E3
E
E2
E1
L1
b2
b1
1
2
L2
3
b
A1
e
c
0
5
scale
Dimensions (mm are the original dimensions)
Unit
max
nom
min
mm
10 mm
A
A1
b
b1
b2
5.0
1.6
1.2
3.2
2.2
0.75 1.65 15.8 13.8
c
c1
D
D1
9.8
D2
4.6
1.2
0.8
2.8
1.8
0.55 1.45 15.4 13.4
9.4
e
E
E1
E2
E3
H
20.1 14.1 18.9 17.06 5.2
5.45
(typ) 19.7 13.7 18.5 16.46 4.8
L1
L2
Ø1
Ø2
3.7
20.3
3.5
3.3
3.3
19.7
3.3
3.1
sot1259_po
Outline
version
SOT1259
Fig. 8.
References
IEC
JEDEC
JEITA
European
projection
Issue date
14-10-21
14-10-22
TO3P
Package outline TO3P (SOT1259)
BYV415K-600P
Product data sheet
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Document
status [1][2]
Product
status [3]
Objective
[short] data
sheet
Development This document contains data from
the objective specification for product
development.
Preliminary
[short] data
sheet
Qualification
This document contains data from the
preliminary specification.
Product
[short] data
sheet
Production
This document contains the product
specification.
[1]
[2]
[3]
Definition
Please consult the most recently issued document before initiating or
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The term 'short data sheet' is explained in section "Definitions".
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BYV415K-600P
Product data sheet
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the Absolute Maximum Ratings System of IEC 60134) will cause permanent
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13. Contents
1
General description ............................................... 1
2
Features and benefits ............................................1
3
Applications ........................................................... 1
4
Quick reference data ............................................. 1
5
Pinning information ............................................... 2
6
Ordering information ............................................. 2
7
Marking ................................................................... 2
8
Limiting values .......................................................3
9
Thermal characteristics .........................................5
10
Characteristics ....................................................... 6
11
Package outline ..................................................... 8
12
12.1
12.2
12.3
12.4
Legal information ...................................................9
Data sheet status ................................................. 9
Definitions .............................................................9
Disclaimers ...........................................................9
Trademarks ........................................................ 10
© NXP Semiconductors N.V. 2014. All rights reserved
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: [email protected]
Date of release: 24 December 2014
BYV415K-600P
Product data sheet
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