JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-252-2L Plastic-Encapsulate MOSFETS CJU30N10 N-Channel Power MOSFET V(BR)DSS RDS(on)MAX ID 100V 31mΩ@10V 30A TO-252-2L DESCRIPTION This advanced high voltage MOSFET is designed to stand high energy in the avalanche mode and switch efficiently. This new high energy device also offers a drain-to-source diode fast recovery time. 1. GATE 2. DRAIN 3. SOURCE Desighed for high voltage, high speed switching applications such as power supplies, converters, power motor controls and bridge circuits. FEATURES High density cell design for ultra low RDS(on) Special process technology for high ESD capability Fully characterized avalanche voltage and current Excellent package for good heat dissipation Good stability and uniformity with high EAS Power switching application APPLICATIONS Hard switched and high frequency circuits Uninterruptible power supply MARKING EQUIVALENT CIRCUIT CJU30N10= Device code Solid dot = Green molding compound device, if none, the normal device XXX=Date Code MAXIMUM RATINGS ( Ta=25℃ unless otherwise noted ) Parameter Symbol Limit Unit Drain-Source Voltage VDS 100 V Gate-Source Voltage VGS ±20 V Continuous Drain Current ID 30 A Pulsed Drain Current IDM 120 A 156 mJ PD 1.25 W RθJA 100 ℃/W Junction Temperature TJ 150 ℃ Storage Temperature Range Tstg -55 ~+150 ℃ Lead Temperature for Soldering Purposes(1/8’’ from case for 10s) TL 260 ℃ Single Pulsed Avalanche Energy EAS Power Dissipation Thermal Resistance from Junction to Ambient (1) (1).EAS condition: VDD=50V,L=0.5mH, RG=25Ω, Starting TJ = 25°C www.cj-elec.com 1 A-1,Feb,2016 MOSFET ELECTRICAL CHARACTERISTICS Ta =25 ℃ unless otherwise specified ELECTRICAL CHARACTERISTICS(Ta=25℃ unless otherwise specified) Parameter Symbol Test Condition Min Typ Max Unit V(BR) DSS VGS = 0V, ID =250µA 100 Zero gate voltage drain current IDSS VDS =100V, VGS =0V 1 µA Gate-body leakage current IGSS VDS =0V, VGS =±20V ±100 nA Gate-threshold voltage VGS(th) VDS =VGS, ID =250µA 2.1 2.5 V Static drain-source on-sate resistance RDS(on) VGS =10V, ID =15A 24 31 mΩ gFS VDS =5V, ID =10A 15 Off characteristics Drain-source breakdown voltage V On characteristics (note1) Forward transconductance 1.3 S Dynamic characteristics (note 2) Input capacitance 2000 Ciss Output capacitance Coss Reverse transfer capacitance Crss VDS =25V,VGS =0V, f =1MHz 300 pF 250 Switching characteristics (note 2) Total gate charge 39 Qg VDS=50V, VGS=10V, 8 Gate-source charge Qgs Gate-drain charge Qgd 12 Turn-on delay time td(on) 7 Turn-on rise time Turn-off delay time Turn-off fall time tr td(off) ID=10A VDD=30V,VGS=10V,RG= 7 3.0Ω, ID=2A, RL=5Ω 29 nC ns 7 tf Drain-Source Diode Characteristics Drain-source diode forward voltage(note1) Continuous drain-source diode forward current Pulsed drain-source diode forward current VSD VGS =0V, IS=15A 1.2 V IS 30 A ISM 120 A Notes: 1. Pulse Test : Pulse Width≤300µs, duty cycle ≤2%. 2. Guaranteed by design, not subject to production. www.cj-elec.com 2 A-1,Feb,2016 7\SLFDO&KDUDFWHULVWLFV Output Characteristics 50 VGS= 7V,10V Ta=25℃ VDS=5V VGS= 5V Pulsed Pulsed (A) 40 (A) 40 ID DRAIN CURRENT DRAIN CURRENT ID VGS= 4.5V 30 20 10 0 0 1 2 3 4 RDS(ON) —— VDS Ta=100℃ Ta=25℃ 20 0 5 0 2 (V) 4 6 GATE TO SOURCE VOLTAGE VGS 8 (V) RDS(ON)—— VGS ID 100 50 Ta=25℃ Pulsed ID=15A 90 Pulsed 80 (m) 30 RDS(ON) (m) 40 VGS=10V ON-RESISTANCE RDS(ON) 30 10 VGS= 3V DRAIN TO SOURCE VOLTAGE ON-RESISTANCE Transfer Characteristics 50 20 10 70 60 50 Ta=100℃ 40 30 20 Ta=25℃ 10 0 5 10 15 20 DRAIN CURRENT 25 ID 0 30 3 (A) 4 5 6 7 8 GATE TO SOURCE VOLTAGE VGS 9 10 (V) Threshold Voltage IS —— VSD 3.0 30 Pulsed 2.5 VTH Ta=100℃ THRESHOLD VOLTAGE SOURCE CURRENT IS (A) (V) 10 Ta=25℃ 1 0.1 0.0 0.2 0.4 0.6 0.8 SOURCE TO DRAIN VOLTAGE www.cj-elec.com 1.0 1.2 2.0 ID=250uA 1.5 1.0 25 1.4 VSD (V) 50 75 JUNCTION TEMPERATURE 3 100 TJ 125 ( ℃) A-1,Feb,2016 TO-252(4R)-2L Package Outline Dimensions Symbol A A1 B b c c1 D D1 E e e1 M N L L1 L2 V ĭ Dimensions In Millimeters Max. Min. 2.380 2.200 0.000 0.100 0.800 1.400 0.710 0.810 0.460 0.560 0.460 0.560 6.500 6.700 5.130 5.460 6.000 6.200 2.286 TYP. 4.327 4.727 1.778REF. 0.762REF. 9.800 10.400 2.9REF. 1.400 1.700 4.830 REF. Dimensions In Inches Min. Max. 0.087 0.094 0.000 0.004 0.031 0.055 0.028 0.032 0.018 0.022 0.018 0.022 0.256 0.264 0.202 0.215 0.236 0.244 0.090 TYP. 0.170 0.186 0.070REF. 0.018REF. 0.386 0.409 0.114REF. 0.055 0.067 0.190 REF. TO-252(4R)-2L Suggested Pad Layout www.cj-elec.com 4 A-1,Feb,2016 To-252(4R)-2L Tape and Reel www.cj-elec.com 5 A-1,Feb,2016