rev.1.0 04.08.16 ELD-850-525 • • • • INFRARED Light Emitting Diode 1650 nm, 1.5 mW InGaAs/InP, MQW structure 5 mm epoxy package Description ELD-1650-525 is an InGaAS/InP MQW infrared LED, typically emitting at 1650 nm with an optical output power of 1.5 mW. It comes in a hermetically sealed clear 5 mm epoxy resin. Maximum Rating (T Parameter CASE = 25°C) Symbol Values Max. Min. Unit Power Dissipation, DC PD 100 mW Pulse Forward Current* Operating Temperature T OPR - 20 200 mA + 80 °C Storage Temperature T STG - 55 + 100 °C Soldering Temperature (max 3s) T SOL + 260 °C I FP * t p ≤ 50 µs, t p /T = 1/2 Electro-Optical Characteristics (T Parameter Symbol CASE = 25°C, I F = 20 mA) Min. Values Typ. Max. 1610 1650 1690 Unit Peak Wavelength λP Dominant Wavelength λD 455 Spectral Width (FWHM) ∆λ 100 Forward Voltage @ 20 mA VF 0.7 0.95 V 0.8 1.0 V nm nm nm Forward Voltage @ 100 mA VF Reverse Voltage (I R = 10 µA) VR 5 Radiant Power @ 20 mA Өe 1.1 1.5 mW Radiant Power @ 100 mA Өe 3.4 5 mW Radiant Intensity @ 20 mA IE 5.3 mW/sr V IE 25 mW/sr Switching time tR, tF 25, 45 ns Viewing Half Angle Ө 1/2 10 deg. Radiant Intensity @ 100 mA All dimensions in mm © All Rights Reserved The above specifications are for reference purpose only and subjected to change without prior notice www.roithner-laser.com 1