AWB512 AWB512 Data Sheet 5 ~ 1200 MHz Wide-band CATV Linear Amplifier MMIC 1. Product Overview 1.1 General Description AWB512, a wide-band linear amplifier MMIC, has high linearity and low noise over a wide range of frequency from 5 MHz to 1200 MHz, being suitable for use in the fiber receiver, distribution amplifiers and drop amplifiers of CATV. The amplifier is available in an SOT89 package and passes through the stringent 100% DC & RF test via an automated test handler. 1.2 Features 5 ~ 1200 MHz Bandwidth 12.4 dB Gain at 500 MHz Output Power: 101 dBV 2.8 dB NF at 500MHz Robust under Hard Operating Conditions +8 V, 125 mA Supply 1.3 Applications CATV forward at 50 ~ 1200 MHz CATV reverse at 5 ~ 300 MHz Optical Node, FTTH, RFoG 1.4 Package Profile & RoHS Compliance SOT89, 4.5x4.0 mm2, surface mount 1/15 ASB Inc. [email protected] RoHS-compliant January 2014 AWB512 2. Summary on Product Performances 2.1 Typical Performance Supply voltage = +8 V, TA = +25 C, ZO = 75 Parameter Reverse Forward Unit Frequency 5 50 300 50 500 1000 MHz Noise Figure 3.1 3.1 3.3 2.8 2.8 3.0 dB Gain 11.3 11.8 10.9 12.8 12.4 11.7 dB S11 -24.0 -24.5 -17.5 -16.5 -20.0 -16.0 dB S22 -20.0 -19.5 -11.0 -22.0 -19.0 -17.5 dB CSO1) 60 dBc CTB1) 73 dBc Current 125 mA Device Voltage +8 V 1) Pout = 101 dBV for CENELEC-42. 2.2 Product Specification Supply voltage = +8 V, TA = +25 C, ZO = 75 Parameter Min Typ Frequency 500 Noise Figure 2.8 Unit MHz 3.1 dB Gain 11.4 12.4 dB S11 -17 -20.0 dB S22 -16 -19.0 dB Current 105 125 Device Voltage 2.3 2/15 Max +8 145 mA V Pin Configuration Pin Description 1 RF_IN 2 Ground 3 RF_OUT & Bias ASB Inc. Simplified Outline [email protected] January 2014 AWB512 2.4 Absolute Maximum Ratings Parameters Max. Ratings Operation Case Temperature -40 to 85 C Storage Temperature -40 to 150 C Device Voltage +9 V Maximum Current 220 mA Operation Junction Temperature +150 C Input RF Power (CW, 75 matched) +25 dBm 2.5 Thermal Resistance Symbol Description Typ Unit Rth Thermal resistance from junction to lead 42 C/W 2.6 ESD Classification & Moisture Sensitivity Level ESD Classification HBM Class 1B Voltage Level: 750 V MM Class A Voltage Level: 100 V CAUTION: Gallium Arsenide Integrated Circuits are sensitive to electrostatic discharge (ESD) and can be damaged by static electricity. Proper ESD control techniques should be used when handling these devices. Moisture Sensitivity Level MSL 3 at 260 C reflow (Intentionally Blanked) 3/15 ASB Inc. [email protected] January 2014 AWB512 3. Application: 50 ~ 1000 MHz (CATV forward, Vsupply = +8 V) 3.1 Application Circuit & Evaluation Board Vdevice = +8 V C4 L1 RF IN L2 C1 L3 C2 RF OUT AWB512 C3 PCB Information Material FR4 Thickness (mm) 0.8 Size (mm) 40x40 EB No. EB-89-A10 Bill of Material 4/15 Symbol Value Size Description Manufacturer AWB512 - - MMIC Amplifier ASB C1, C2 1 F 0603 DC blocking capacitor Murata C3 0.5 pF 0603 Matching capacitor Murata C4 10 F 0805 Decoupling capacitor Murata L1 1 H 1206 RF choke inductor Murata L2 10 nH 0603 Matching inductor Murata L3 4.7 nH 0603 Matching inductor Murata ASB Inc. [email protected] January 2014 AWB512 3.2 Performance Table Supply voltage = +8 V, TA = +25 C, ZO = 75 Parameter Forward Unit Frequency 50 500 860 1000 MHz Noise Figure 2.8 2.8 3.0 3.0 dB Gain 12.8 12.4 12.1 11.7 dB S11 -16.5 -20.0 -22.0 -16.5 dB S22 -22.0 -19.0 -16.5 -17.5 dB CSO1) 60 dBc CTB1) 73 dBc Current 125 mA Device Voltage +8 V 1) Pout = 101 dBV for CENELEC-42. 40 30 20 10 0 -10 -20 -30 -40 -50 -60 S21 S12 S11 S22 K 0 5/15 200 ASB Inc. 400 600 800 Frequency (MHz) [email protected] 1000 10 9 8 7 6 5 4 3 2 1 0 1200 Stability Factor, K Plot of S-parameter & Stability Factor S-parameters (dB) 3.3 January 2014 AWB512 Plots of Noise Figure and Performances with Temperature 5 14 4 13 Gain (dB) NF (dB) 3.4 NF 3 2 12 11 -40 °C 10 +25 °C 1 9 0 8 0 200 400 600 800 Frequency (MHz) 1000 1200 0 0 200 400 600 800 Frequency (MHz) 1000 1200 0 -10 S22 (dB) -10 S11 (dB) +85 °C -20 -40 °C -20 -40 °C -30 +25 °C -30 +25 °C -40 +85 °C +85 °C -40 -50 0 200 400 600 800 Frequency (MHz) 1000 1200 0 135 200 400 600 800 Frequency (MHz) 1000 1200 20 Frequency = 500 MHz 15 Gain (dB) Current (mA) 130 125 120 5 115 110 0 -60 6/15 10 -40 -20 0 20 40 Temperature (°C) 60 80 ASB Inc. 100 -60 [email protected] -40 -20 0 20 40 Temperature (°C) 60 80 100 January 2014 AWB512 5 Frequency = 500 MHz NF (dB) 4 3 2 1 0 -60 -40 -20 0 20 40 Temperature (°C) 60 80 100 (Intentionally Blanked) 7/15 ASB Inc. [email protected] January 2014 AWB512 4. Application: 50 ~ 1200 MHz (CATV forward, Vsupply = +8 V) 4.1 Application Circuit & Evaluation Board Vdevice = +8 V C5 L2=1 uH C3 C1 L3 L1 RF IN C4 RF OUT AWB512 C2 R1 PCB Information Material FR4 Thickness (mm) 0.8 Size (mm) 40x40 EB No. EB-89-A10 Bill of Material 8/15 Symbol Value Size Description Manufacturer AWB512 - - MMIC Amplifier ASB C1, C4 1 F 0603 DC blocking capacitor Murata C2 0.5 pF 0603 Matching capacitor Murata C3 33 pF 0603 Matching capacitor Murata C5 10 F 0805 Decoupling capacitor Murata L1 8.2 nH 0603 Matching inductor Murata L2 1 H 1206 RF choke inductor Murata L3 5.6 nH 0603 Matching inductor Murata R1 10 0603 Matching resistor Samsung ASB Inc. [email protected] January 2014 AWB512 4.2 Performance Table Supply voltage = +8 V, TA = +25 C, ZO = 75 Forward Frequency 50 500 1002 1200 MHz Noise Figure 3.9 3.4 3.1 3.5 dB Gain 12.0 11.9 11.3 11.0 dB S11 -16 -17 -21 -19 dB S22 -19 -21 -18 -15 dB Current 125 mA Device Voltage +8 V S21 S12 S11 S22 K 200 ASB Inc. 400 600 800 Frequency (MHz) [email protected] 1000 10 9 8 7 6 5 4 3 2 1 0 1200 Stability Factor, K 40 30 20 10 0 -10 -20 -30 -40 -50 -60 0 9/15 Unit Plot of S-parameter & Stability Factor S-parameters (dB) 4.3 Parameter January 2014 AWB512 5. Application: 5 ~ 300 MHz (CATV reverse, Vsupply = +8 V) 5.1 Application Circuit & Evaluation Board Vdevice = +8 V C3 L1 AWB512 C2 C1 RF IN C4 R3 L2 R1 RF OUT L3 R2 PCB Information Material FR4 Thickness (mm) 0.8 Size (mm) 40x40 EB No. EB-89-A10 Bill of Material 10/15 Symbol Value Size Description Manufacturer AWB512 - - MMIC Amplifier ASB C1, C2 1 F 0603 DC blocking capacitor Murata C3 10 F 0805 Decoupling capacitor Murata C4 1 F 0603 Feedback capacitor Murata L1 22 H 1206 RF choke inductor Murata L2 2.2 H 0603 Matching inductor Samsung L3 2.7 H 0603 Matching inductor Samsung R1 120 0603 Matching resistor Samsung R2 180 0603 Matching resistor Samsung R3 2.7 k 0603 Feedback resistor Samsung ASB Inc. [email protected] January 2014 AWB512 5.2 Performance Table Supply voltage = +8 V, TA = +25 C, ZO = 75 Parameter Reverse Frequency 5 50 300 MHz Noise Figure 3.1 3.1 3.3 dB Gain 11.3 11.8 10.9 dB S11 -24.0 -24.5 -17.5 dB S22 -20.0 -19.5 -11.0 dB Output P1dB Unit 21.0 23.5 24.0 dBm Output IP31) 36 42 43 dBm Output IP21), 2) 60 60 60 dBm Current 125 mA Device Voltage +8 V 1) OIP3 and OIP2 are measured with two tones at the output power of +10 dBm/tone separated by 6 MHz. 2) OIP2 is measured at F1+F2 Frequency. 40 30 20 10 0 -10 -20 -30 -40 -50 -60 S21 S22 S12 S11 K 0 11/15 10 9 8 7 6 5 4 3 2 1 0 50 ASB Inc. 100 150 200 Frequency (MHz) [email protected] 250 Stability Factor, K Plot of S-parameter & Stability Factor S-parameters (dB) 5.3 300 January 2014 AWB512 5.4 Plots of Noise Figure and Performances with Temperature 5 13 4 12 Gain (dB) NF (dB) NF 3 2 1 11 10 -40 °C +25 °C 9 +85 °C 0 8 50 100 150 200 Frequency (MHz) 250 300 0 0 0 -10 -5 S22 (dB) S11 (dB) 0 -20 -30 -40 °C 50 100 150 200 Frequency (MHz) 250 -10 -15 -40 °C -20 +25 °C +25 °C -40 300 -25 +85 °C -50 +85 °C -30 0 50 100 150 200 Frequency (MHz) 250 300 0 135 50 100 150 200 Frequency (MHz) 250 300 20 Frequency = 50 MHz 15 Gain (dB) Current (mA) 130 125 120 5 115 110 0 -60 12/15 10 -40 -20 0 20 40 Temperature (°C) 60 80 100 ASB Inc. -60 [email protected] -40 -20 0 20 40 Temperature (°C) 60 80 100 January 2014 AWB512 5 Frequency = 50 MHz NF (dB) 4 3 2 1 0 -60 -40 -20 0 20 40 Temperature (°C) 60 80 100 (Intentionally Blanked) 13/15 ASB Inc. [email protected] January 2014 AWB512 6. Package Outline (SOT89, 4.5x4.0x1.5 mm) Part No. Lot No. Symbols A L b b1 C D D1 E E1 e1 H S e AWB512 Pxxxx Dimensions (In mm) MIN NOM 1.40 1.50 0.89 1.04 0.36 0.42 0.41 0.47 0.38 0.40 4.40 4.50 1.40 1.60 3.64 --2.40 2.50 2.90 3.00 0.35 0.40 0.65 0.75 1.40 1.50 MAX 1.60 1.20 0.48 0.53 0.43 4.60 1.75 4.25 2.60 3.10 0.45 0.85 1.60 7. Surface Mount Recommendation (In mm) NOTE 1. The number and size of ground via holes in a circuit board are critical for thermal and RF grounding considerations. 2. Recommended is that the ground via holes be placed on the bottom of the lead pin 2 and exposed pad of the device for better RF and thermal performance, as shown in the drawing at the left side. 14/15 ASB Inc. [email protected] January 2014 AWB512 8. Recommended Soldering Reflow Profile 260 C 20~40 sec Ramp-up (3 C/sec) Ramp-down (6 C/sec) 200 C 150 C 60~180 sec 9. Family Products Information ASB’s AWB-series single-ended CATV amplifiers are available in different gain levels such as 12 dB, 17 dB, and 20 dB in which they are categorized by two groups according to the device voltage, 5 V and 8 V, so that a user can select the amplifier for different gain stages to design their system with ease. In addition, AWB3xx group for 5 V and AWB5xx group for 8 V are provided by almost the same external matching circuit and in a SOT89 package. Part Number Description Package Type AWB312 5 ~ 6 V, 12 dB gain CATV amplifier SOT89 AWB317 5 V, 17 dB gain CATV amplifier SOT89 AWB319 5 V, 20 dB gain CATV amplifier SOT89 AWB512 8 V, 12 dB gain CATV amplifier SOT89 AWB517 8 V, 17 dB gain CATV amplifier SOT89 AWB519 8 V, 20 dB gain CATV amplifier SOT89 (End of Datasheet) 15/15 ASB Inc. [email protected] January 2014