DMNH6012SPS Green 60V 175°C N-CHANNEL ENHANCEMENT MODE MOSFET PowerDI NEW PRODUCT Product Summary BVDSS RDS(ON) Max 60V 11mΩ @ VGS = 10V Features ID Max TC = +25°C 50A Rated to +175°C – Ideal for High Ambient Temperature Environments 100% Unclamped Inductive Switching – Ensures More Reliable and Robust End Application Low RDS(ON) – Minimizes Power Losses Low QG – Minimizes Switching Losses <1.1mm Package Profile – Ideal for Thin Applications Lead-Free Finish; RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability An Automotive-Compliant Part is Available Under Separate Datasheet (DMNH6012SPSQ) Description This MOSFET is designed to minimize the on-state resistance (RDS(ON)), yet maintain superior switching performance, making it ideal for high efficiency power management applications. Applications Mechanical Data Case: PowerDI 5060-8 Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminal Connections: See Diagram Below Terminals: Finish – Matte Tin Annealed over Copper Leadframe. Solderable per MIL-STD-202, Method 208 Weight: 0.097 grams (Approximate) Power Management Functions DC-DC Converters Backlighting ® PowerDI5060-8 D Pin1 S D S D S D G D G S Top View Internal Schematic Bottom View Top View Pin Configuration Ordering Information (Note 4) Part Number DMNH6012SPS-13 Notes: Case PowerDI5060-8 Packaging 2,500/Tape & Reel 1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. All applicable RoHS exemptions applied. 2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 4. For packaging details, go to our website at http://www.diodes.com/products/packages.html. PowerDI is a registered trademark of Diodes Incorporated. DMNH6012SPS Document number: DS38084 Rev. 3 - 2 1 of 8 www.diodes.com April 2016 © Diodes Incorporated DMNH6012SPS Marking Information NEW PRODUCT =Manufacturer’s Marking H6012SS = Product Type Marking Code YYWW = Date Code Marking YY = Last Two Digits of Year (ex: 16 = 2016) WW = Week Code (01 to 53) Maximum Ratings (@TA = +25°C, unless otherwise specified.) Characteristic Symbol VDSS VGSS Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (Note 6) VGS = 10V TC = +25°C TC = +100°C Pulsed Drain Current (380µs Pulse, Duty Cycle = 1%) ID IDM IS Maximum Continuous Body Diode Forward Current (Note 6) Value 60 ±20 50 30 120 2.6 Unit V V A A A Avalanche Current, L = 0.1mH (Note 7) IAS 45 A Avalanche Energy, L = 0.1mH (Note 7) EAS 100 mJ Value 1.6 93 51 3.1 49 26 3.8 -55 to +175 Unit W Thermal Characteristics Characteristic Symbol PD Total Power Dissipation (Note 5) Thermal Resistance, Junction to Ambient (Note 5) Steady State t<10s Total Power Dissipation (Note 6) Thermal Resistance, Junction to Ambient (Note 6) PD Steady State t<10s Thermal Resistance, Junction to Case Operating and Storage Temperature Range Notes: RθJA RθJA RθJC TJ, TSTG °C/W W °C/W °C 5. Device mounted on FR-4 PC board, with minimum recommended pad layout, single sided. 6. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal bias to bottom layer 1-inch square copper plate. 7. IAS and EAS ratings are based on low frequency and duty cycles to keep TJ = +25°C. DMNH6012SPS Document number: DS38084 Rev. 3 - 2 2 of 8 www.diodes.com April 2016 © Diodes Incorporated DMNH6012SPS NEW PRODUCT Electrical Characteristics (@TA = +25°C, unless otherwise specified.) Characteristic OFF CHARACTERISTICS (Note 8) Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current, TJ = +25°C Gate-Source Leakage ON CHARACTERISTICS (Note 8) Gate Threshold Voltage Static Drain-Source On-Resistance Diode Forward Voltage DYNAMIC CHARACTERISTICS (Note 9) Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance Total Gate Charge (VGS = 4.5V) Total Gate Charge (VGS = 10V) Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge Notes: Symbol Min Typ Max Unit Test Condition BVDSS IDSS IGSS 60 — — — — — — 1 ±100 V µA nA VGS = 0V, ID = 250μA VDS = 60V, VGS = 0V VGS = ±20V, VDS = 0V VGS(TH) RDS(ON) VSD 2 — — — 8 0.7 4 11 1.2 V mΩ V VDS = VGS, ID = 250μA VGS = 10V, ID = 50A VGS = 0V, IS = 1.7A CISS COSS CRSS RG QG QG QGS QGD tD(ON) tR tD(OFF) tF tRR QRR — — — — — — — — — — — — — — 1,926 330 112 2.0 16.3 35.2 7.6 6.9 6.4 11.9 16.5 5 28 23 — — — — — — — — — — — — — — pF pF pF Ω nC nC nC nC ns ns ns ns ns nC VDS = 30V, VGS = 0V, f = 1MHz VDS = 0V, VGS = 0V, f = 1MHz VDS = 30V, ID = 25A VGS = 10V, VDS = 30V, RG = 3Ω, ID = 25A IF = 25A, di/dt = 100A/μs 8. Short duration pulse test used to minimize self-heating effect. 9. Guaranteed by design. Not subject to product testing. DMNH6012SPS Document number: DS38084 Rev. 3 - 2 3 of 8 www.diodes.com April 2016 © Diodes Incorporated DMNH6012SPS 15 30.0 VGS=4.0V VDS=5V 20.0 ID, DRAIN CURRENT (A) ID, DRAIN CURRENT (A) 12 VGS=4.5V VGS=10.0V 15.0 10.0 VGS=3.5V 5.0 9 125℃ 6 85℃ 150℃ 3 25℃ 175℃ VGS=3.0V -55℃ 0.0 0 0 0.5 1 1.5 2 2.5 3 1.5 25.00 20.00 VGS=4.5V 15.00 10.00 VGS=10V 5.00 5 10 15 20 25 30 35 40 45 175℃ 0.015 85℃ 0.01 25℃ -55℃ 0.005 0 5 10 15 20 25 Document number: DS38084 Rev. 3 - 2 4 25 20 15 ID=25A 10 5 4 6 8 10 12 14 16 18 20 VGS, GATE-SOURCE VOLTAGE (V) Figure 4. Typical Transfer Characteristic 30 ID, DRAIN CURRENT (A) Figure 5. Typical On-Resistance vs. Drain Current and Temperature DMNH6012SPS 3.5 30 2 RDS(ON), DRAIN-SOURCE ON-RESISTANCE (NORMALIZED) 125℃ 3 35 50 0.02 150℃ 2.5 40 ID, DRAIN-SOURCE CURRENT (A) Figure 3. Typical On-Resistance vs. Drain Current and Gate Voltage VGS=10V 2 VGS, GATE-SOURCE VOLTAGE (V) Figure 2. Typical Transfer Characteristic RDS(ON), DRAIN-SOURCE ON-RESISTANCE (mΩ) RDS(ON), DRAIN-SOURCE ON-RESISTANCE (mΩ) VDS, DRAIN-SOURCE VOLTAGE (V) Figure 1. Typical Output Characteristic RDS(ON), DRAIN-SOURCE ON-RESISTANCE (mΩ) NEW PRODUCT 25.0 4 of 8 www.diodes.com 2.4 2.2 2 VGS=10V, ID=25A 1.8 1.6 1.4 1.2 VGS=4.5V, ID=25A 1 0.8 0.6 0.4 -50 -25 0 25 50 75 100 125 150 175 TJ, JUNCTION TEMPERATURE (℃) Figure 6. On-Resistance Variation with Temperature April 2016 © Diodes Incorporated 0.025 VGS=4.5V, ID=25A 0.02 3 VGS(TH), GATE THRESHOLD VOLTAGE (V) RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω) 0.03 0.015 0.01 VGS=10V, ID=25A 0.005 2.8 2.6 2.4 2.2 ID=1mA 2 ID=250μA 1.8 1.6 1.4 1.2 1 0 0.8 -50 -25 0 25 50 75 100 125 150 175 -50 -25 0 25 50 75 100 125 150 175 TJ, JUNCTION TEMPERATURE (℃) Figure 8. Gate Threshold Variation vs. Junction Temperature TJ, JUNCTION TEMPERATURE (℃) Figure 7. On-Resistance Variation with Temperature 30 100000 25 IDSS, LEAKAGE CURRENT (nA) IS, SOURCE CURRENT (A) 150℃ VGS=0V, TA=125℃ 20 VGS=0V, TA=150℃ 15 VGS=0V, TA=85℃ VGS=0V, TA=175℃ 10 VGS=0V, TA=25℃ 5 VGS=0V, TA=-55℃ 10000 125℃ 175℃ 1000 85℃ 100 10 25℃ 1 0 0.1 0 0.3 0.6 0.9 1.2 0 10 20 30 40 VDS, DRAIN-SOURCE VOLTAGE (V) Figure 10. Typical Drain-Source Leakage Current vs. Voltage VSD, SOURCE-DRAIN VOLTAGE (V) Figure 9. Diode Forward Voltage vs. Current 10000 10 f=1MHz Ciss 8 1000 VGS (V) CT, JUNCTION CAPACITANCE (pF) NEW PRODUCT DMNH6012SPS Coss VDS=30V, ID=25A 4 Crss 100 6 2 10 0 0 5 10 15 20 25 30 35 40 VDS, DRAIN-SOURCE VOLTAGE(V) Figure 11. Typical Junction Capacitance DMNH6012SPS Document number: DS38084 Rev. 3 - 2 0 5 10 15 20 25 30 35 40 Qg (nC) Figure 12. Gate Charge 5 of 8 www.diodes.com April 2016 © Diodes Incorporated DMNH6012SPS 1000 NEW PRODUCT ID, DRAIN CURRENT (A) RDS(ON) Limited PW =10ms 100 PW =1ms 10 1 0.1 0.01 PW =100ms TJ(MAX)=150℃ TC=25℃ PW =1s Single Pulse DUT on 1*MRP board PW =10s VGS=10V DC 0.1 1 10 100 VDS, DRAIN-SOURCE VOLTAGE (V) Figure 13. SOA, Safe Operation Area r(t), TRANSIENT THERMAL RESISTANCE 1 D=0.5 D=0.9 D=0.3 D=0.7 0.1 D=0.1 D=0.05 D=0.02 0.01 D=0.01 D=0.005 RθJA (t)=r(t) * RθJA RθJA=93℃/W Duty Cycle, D=t1 / t2 D=Single Pulse 0.001 0.001 0.01 0.1 1 10 100 1000 t1, Pulse Duration Time (sec) Figure 14. Transient Thermal Resistance DMNH6012SPS Document number: DS38084 Rev. 3 - 2 6 of 8 www.diodes.com April 2016 © Diodes Incorporated DMNH6012SPS Package Outline Dimensions Please see http://www.diodes.com/package-outlines.html for the latest version. PowerDI5060-8 D Detail A D1 0(4X) NEW PRODUCT c A1 E1 E e 01 (4X) 1 b (8X) e/2 1 L b2 (4X) D3 A K D2 E3 E2 M M1 Detail A L1 G b3 (4X) PowerDI5060-8 Dim Min Max Typ A 0.90 1.10 1.00 A1 0.00 0.05 b 0.33 0.51 0.41 b2 0.200 0.350 0.273 b3 0.40 0.80 0.60 c 0.230 0.330 0.277 D 5.15 BSC D1 4.70 5.10 4.90 D2 3.70 4.10 3.90 D3 3.90 4.30 4.10 E 6.15 BSC E1 5.60 6.00 5.80 E2 3.28 3.68 3.48 E3 3.99 4.39 4.19 e 1.27 BSC G 0.51 0.71 0.61 K 0.51 L 0.51 0.71 0.61 L1 0.100 0.200 0.175 M 3.235 4.035 3.635 M1 1.00 1.40 1.21 Θ 10° 12° 11° Θ1 6° 8° 7° All Dimensions in mm Suggested Pad Layout Please see http://www.diodes.com/package-outlines.html for the latest version. PowerDI5060-8 X4 Y2 X3 Y3 Y5 Y1 X2 Y4 X1 Y7 Y6 G1 C X DMNH6012SPS Document number: DS38084 Rev. 3 - 2 G Dimensions C G G1 X X1 X2 X3 X4 Y Y1 Y2 Y3 Y4 Y5 Y6 Y7 Value (in mm) 1.270 0.660 0.820 0.610 4.100 0.755 4.420 5.610 1.270 0.600 1.020 0.295 1.825 3.810 0.180 6.610 Y(4x) 7 of 8 www.diodes.com April 2016 © Diodes Incorporated DMNH6012SPS IMPORTANT NOTICE NEW PRODUCT DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. 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