BELLING BLM4953 P-channel enhancement mode power mosfet Datasheet

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BLM4953
P-Channel Enhancement Mode Power MOSFET
DESCRIPTION
D1
The BLM4953 uses advanced trench technology to prov ide
excellent RDS(ON), low gate charge and operation with gate
D2
G1
G2
voltages as low as 4.5V. This device is suitable for use as a
load switch or in PWM applications.
S1
S2
Schematic diagram
GENERAL FEATURES
● VDS = -30V,ID = -5.1A
RDS(ON) < 105mΩ @ VGS=-4.5V
RDS(ON) < 55mΩ @ VGS=-10V
● High Power and current handing capability
● Lead free product is acquired
Marking and pin Assignment
● Surface Mount Package
Application
●PWM applications
●Load switch
SOP-8 top view
●Power management
Package Marking And Ordering Information
Device Marking
4953
Device
Device Package
Reel Size
Tape width
BLM4953
SOP-8
Ø330mm
12mm
Absolute Maximum Ratings (TA=25℃
℃unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Drain Current-Continuous
ID
Drain Current-Pulsed (Note 1)
IDM
Maximum Power Dissipation
PD
Operating Junction and Storage Temperature Range
TJ,TSTG
Quantity
2500 units
Limit
Unit
-30
V
±20
V
-5.1
A
-20
A
2.5
W
-55 To 150
℃
50
℃/W
Thermal Characteristic
Thermal Resistance,Junction-to-Ambient (Note 2)
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BLM4953
Electrical Characteristics (TA=25℃unless otherwise noted)
Parameter
Symbol
Condition
Min
Typ
Max
Unit
Off Characteristics
Drain-Source Breakdown Voltage
BVDSS
VGS=0V ID=-250µA
-30
-33
-
V
Zero Gate Voltage Drain Current
IDSS
VDS=-24V,VGS=0V
-
-
-1
µA
Gate-Body Leakage Current
IGSS
VGS=±20V,VDS=0V
-
-
±100
nA
Gate Threshold Voltage
VGS(th)
VDS=VGS,ID=-250µA
-1
-1.6
-3
V
Drain-Source On-State Resistance
RDS(ON)
VGS=-10V, ID=-5.1A
-
48
55
mΩ
VGS=-4.5V, ID=-4.2A
-
73
105
mΩ
VDS=-15V,ID=-4.5A
4
7
-
S
-
520
-
PF
-
130
-
PF
On Characteristics (Note 3)
Forward Transconductance
gFS
Dynamic Characteristics (Note4)
Input Capacitance
Clss
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
-
70
-
PF
Turn-on Delay Time
td(on)
-
15
-
nS
Turn-on Rise Time
tr
VDD=-15V, ID=-1A,
-
13
-
nS
td(off)
VGS=-10V,RGEN=6Ω
-
58
-
nS
VDS=-15V,VGS=0V,
F=1.0MHz
Switching Characteristics (Note 4)
Turn-Off Delay Time
Turn-Off Fall Time
tf
-
21
-
nS
Total Gate Charge
Qg
-
12
-
nC
Gate-Source Charge
Qgs
-
2.2
-
nC
Gate-Drain Charge
Qgd
-
3
-
nC
-
-
-1.2
V
VDS=-15V,ID=-5.3A,VGS=-10V
Drain-Source Diode Characteristics
Diode Forward Voltage (Note 3)
VSD
VGS=0V,IS=-1.7A
Notes:
1. Repetitive Rating: Pulse width limited by maximum junction temperature.
2. Surface Mounted on FR4 Board, t ≤ 10 sec.
3. Pulse Test: Pulse Width ≤ 300µs, Duty Cycle ≤ 2%.
4. Guaranteed by design, not subject to production
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BLM4953
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
ton
tr
td(on)
toff
tf
td(off)
90%
VOUT
90%
INVERTED
10%
10%
90%
VIN
50%
50%
10%
PULSE WIDTH
Figure 2:Switching Waveforms
PD Power(W)
ID- Drain Current (A)
Figure 1:Switching Test Circuit
TJ-Junction Temperature(℃)
TJ-Junction Temperature(℃)
Figure 4 Drain Current
ID- Drain Current (A)
Rdson On-Resistance(mΩ)
Figure 3 Power Dissipation
Vds Drain-Source Voltage (V)
ID- Drain Current (A)
Figure 5 Output CHARACTERISTICS
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Figure 6 Drain-Source On-Resistance
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ID- Drain Current (A)
Normalized On-Resistance
BLM4953
Vgs Gate-Source Voltage (V)
TJ-Junction Temperature(℃)
Figure 8 Drain-Source On-Resistance
C Capacitance (pF)
Rdson On-Resistance(mΩ)
Figure 7 Transfer Characteristics
Vgs Gate-Source Voltage (V)
Vds Drain-Source Voltage (V)
Figure 10 Capacitance vs Vds
Vgs Gate-Source Voltage (V)
Is- Reverse Drain Current (A)
Figure 9 Rdson vs Vgs
Qg Gate Charge (nC)
Figure 11 Gate Charge
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Vsd Source-Drain Voltage (V)
Figure 12 Source- Drain Diode Forward
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ID- Drain Current (A)
BLM4953
Vds Drain-Source Voltage (V)
Safe Operation Area
r(t),Normalized Effective
Transient Thermal Impedance
Figure 13
Square Wave Pluse Duration(sec)
Figure 14 Normalized Maximum Transient Thermal Impedance
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BLM4953
SOP-8 PACKAGE IN FORMATION
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