ON CPH6532-TL-E Bipolar transistor Datasheet

Ordering number : ENA0522A
CPH6532
Bipolar Transistor
http://onsemi.com
50V, 1A, Low VCE(sat) NPN Dual CPH6
Applications
•
Relay drivers, lamp drivers, motor drivers, flash
Features
•
•
•
Composite type with two NPN transistors contained in one package facilitating high-density mounting
The two chips contained are equivalent to the CPH3216
Ultrasmall package permitting applied sets to be small and slim
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Symbol
Collector-to-Base Voltage
Conditions
Ratings
Unit
VCBO
VCES
80
V
80
V
VCEO
VEBO
50
V
5
V
1.0
A
Collector Current (Pulse)
IC
ICP
Base Current
IB
200
mA
Collector Dissipation
When mounted on ceramic substrate (600mm2×0.8mm) 1unit
0.9
W
Total Power Dissipation
PC
PT
When mounted on ceramic substrate (600mm2×0.8mm)
1.1
W
Junction Temperature
Tj
150
°C
Storage Temperature
Tstg
-55 to +150
°C
Collector-to-Emitter Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
2
A
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating
Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.
Package Dimensions
Product & Package Information
unit : mm (typ)
7018A-006
• Package
: CPH6
• JEITA, JEDEC
: SC-74, SOT-26, SOT-457
• Minimum Packing Quantity : 3,000 pcs./reel
4
Packing Type: TL
Marking
0.9
1
2
0.95
LOT No.
ET
0.05
1.6
0.2
0.6
2.8
0.2
0.6
5
CPH6532-TL-E
0.15
2.9
6
TL
3
0.4
1 : Emitter1
2 : Base1
3 : Collector2
4 : Emitter2
5 : Base2
6 : Collector1
Electrical Connection
6
5
4
1
2
3
CPH6
Semiconductor Components Industries, LLC, 2013
August, 2013
62712 TKIM/11007EA TIIM TC-00000428 No. A0522-1/6
CPH6532
Electrical Characteristics at Ta=25°C
Parameter
Symbol
Collector Cutoff Current
Ratings
Conditions
min
typ
Unit
max
ICBO
IEBO
VCB=40V, IE=0A
VEB=4V, IC=0A
Gain-Bandwidth Product
hFE
fT
VCE=2V, IC=100mA
VCE=10V, IC=300mA
Output Capacitance
Cob
VCE(sat)1
VCB=10V, f=1MHz
IC=500mA, IB=10mA
VCE(sat)2
IC=300mA, IB=6mA
VBE(sat)
V(BR)CBO
IC=500mA, IB=10mA
IC=10μA, IE=0A
80
V
V(BR)CES
V(BR)CEO
IC=100μA, RBE=0Ω
80
V
IC=1mA, RBE=∞
50
V
V(BR)EBO
ton
IE=10μA, IC=0A
5
tstg
tf
See specified Test Circuit.
Emitter Cutoff Current
DC Current Gain
Collector-to-Emitter Saturation Voltage
Base-to-Emitter Saturation Voltage
Collector-to-Base Breakdown Voltage
Collector-to-Emitter Breakdown Voltage
Collector-to-Emitter Breakdown Voltage
Emitter-to-Base Breakdown Voltage
Turn-On Time
Storage Time
Fall Time
200
0.1
μA
0.1
μA
560
420
MHz
6
pF
130
190
mV
90
135
mV
0.81
1.2
V
V
38
ns
332
ns
40
ns
Switching Time Test Circuit
IB1
PW=20μs
D.C.≤1%
IC
OUTPUT
IB2
INPUT
RB
VR
RL
+
50Ω
+
100μF
470μF
VBE= --5V
VCC=25V
20IB1= --20IB2=IC=500mA
Ordering Information
Shipping
memo
CPH6
3,000pcs./reel
Pb Free
mA 2
0
Collector Current, IC -- A
0.7
6mA
0.6
4mA
0.5
2mA
0.4
VCE=2V
0.9
10mA
8mA
30
50mA
0.8
mA
A
40m
0.9
IC -- VBE
1.0
0.3
0.8
0.7
0.6
0.5
0.4
0.3
Ta=
7
0.2
0.2
0.1
0.1
IB=0mA
0
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
Collector-to-Emitter Voltage, VCE -- V
0.9
1.0
IT11441
25°C
--25°
C
IC -- VCE
1.0
Collector Current, IC -- A
Package
5°C
Device
CPH6532-TL-E
0
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
Base-to-Emitter Voltage, VBE -- V
0.9
1.0
IT11416
No. A0522-2/6
CPH6532
hFE -- IC
1000
VCE=2V
Ta=75°C
DC Current Gain, hFE
3
--25°C
2
VCE=10V
3
Gain-Bandwidth Product, f T -- MHz
7
5
f T -- IC
5
25°C
100
7
5
3
2
2
1000
7
5
3
2
100
7
5
3
10
0.01
2
3
5
7
2
0.1
3
5
7
2
1.0
Collector Current, IC -- A
2
0.01
3
5
7
2
0.1
3
5
7
2
1.0
3
IT01650
VCE(sat) -- IC
3
f=1MHz
IC / IB=20
Collector-to-Emitter
Saturation Voltage, VCE(sat) -- V
7
Output Capacitance, Cob -- pF
3
Collector Current, IC -- A
Cob -- VCB
100
2
IT01648
5
3
2
10
7
5
2
0.1
7
5
5°C
7
Ta=
3
25
C
--25°
2
°C
3
2
5 7 0.1
2
3
5 7 1.0
2
3
5 7 10
2
3
0.01
0.01
5 7 100
IT01652
Collector-to-Base Voltage, VCB -- V
Base-to-Emitter
Saturation Voltage, VBE(sat) -- V
0.1
°C
=75
Ta
C
25°
3
2
0.01
2
3
5
7
2
0.1
3
5
1.0
IT11420
Collector Current, IC -- A
3
s
DC
10
0m
op
s
er
2
ms
10
Collector Current, IC -- A
μs
100 0μs
50
1m
3
ati
on
0.1
7
5
3
2
Ta=25°C
Single pulse
Mounted on a ceramic board (600mm2✕0.8mm)
0.01
0.1
2
3
7 1.0
IT11418
5
3
2
1.0
Ta= --25°C
7
5
75°C
25°C
3
2
2
3
5
7
2
0.1
3
5
7 1.0
IT01658
PC -- Ta
Mounted on a ceramic board (600mm2✕0.8mm)
1.2
IC=1A
1.0
7
5
5
IC / IB=50
1.4
ICP=2A
2
3
Collector Current, IC -- A
ASO
5
2
0.1
VBE(sat) -- IC
0.1
0.01
7
Collector Dissipation, PC -- W
Collector-to-Emitter
Saturation Voltage, VCE(sat) -- V
2
°C
--25
7
7
3
5
5
10
IC / IB=50
7
3
Collector Current, IC -- A
VCE(sat) -- IC
5
2
5
7 1.0
2
3
5
7 10
2
Collector-to-Emitter Voltage, VCE -- V
1.1
1.0
0.9
To
ta
0.8
ld
1u
nit
0.6
iss
ipa
tio
n
0.4
0.2
0
3
5
7
IT11541
0
20
40
60
80
100
120
Ambient Temperature, Ta -- °C
140
160
IT10764
No. A0522-3/6
CPH6532
Embossed Taping Specification
CPH6532-TL-E
No. A0522-4/6
CPH6532
Outline Drawing
CPH6532-TL-E
Land Pattern Example
Mass (g) Unit
0.015 mm
* For reference
Unit: mm
2.4
1.4
0.6
0.95
0.95
No. A0522-5/6
CPH6532
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PS No. A0522-6/6
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