Panasonic DSC5002 Silicon npn epitaxial planar type Datasheet

DSC5002
Silicon NPN epitaxial planar type
For general amplification
Complementary to DSA5002
DSC2002 in SMini3 type package
Unit: mm
 Features
 High forward current transfer ratio hFE with excellent linearity
 Low collector-emitter saturation voltage VCE(sat)
 Halogen-free / RoHS compliant
(EU RoHS / UL-94 V-0 / MSL: Level 1 compliant)
 Marking Symbol: C2
 Packaging
DSC5002×0L Embossed type (Thermo-compression sealing): 3 000 pcs / reel (standard)
 Absolute Maximum Ratings Ta = 25°C
Parameter
Symbol
Rating
Unit
Collector-base voltage (Emitter open)
VCBO
60
V
Collector-emitter voltage (Base open)
VCEO
50
V
Emitter-base voltage (Collector open)
VEBO
5
V
Collector current
IC
500
mA
Peak collector current
ICP
1
A
Collector power dissipation
PC
150
mW
Junction temperature
Tj
150
°C
Operating ambient temperature
Topr
–40 to +85
°C
Storage temperature
Tstg
–55 to +150
°C
1: Base
2: Emitter
3: Collector
Panasonic
JEITA
Code
SMini3-F2-B
SC-85

 Electrical Characteristics Ta = 25°C±3°C
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Collector-base voltage (Emitter open)
VCBO
IC = 10 mA, IE = 0
60
V
Collector-emitter voltage (Base open)
VCEO
IC = 2 mA, IB = 0
50
V
Emitter-base voltage (Collector open)
VEBO
IE = 10 mA, IC = 0
5
V
Collector-base cutoff current (Emitter open)
ICBO
VCB = 20 V, IE = 0
hFE1*2
VCE = 10 V, IC = 150 mA
120
hFE2
VCE = 10 V, IC = 500 mA
40
VCE(sat)
IC = 300 mA, IB = 30 mA
0.1
fT
VCE = 10 V, IC = 50 mA
160
VCB = 10 V, IE = 0, f = 1 MHz
4.8
Forward current transfer ratio *1
Collector-emitter saturation voltage *1
Transition frequency
Collector output capacitance
(Common base, input open circuited)
Cob
0.1
340
0.6
mA

V
MHz
15
pF
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *1: Pulse measurement
*2: Rank classification
Code
R
S
0
Rank
R
S
No-rank
hFE1
120 to 240
170 to 340
120 to 340
Marking Symbol
C2R
C2S
C2
Product of no-rank is not classified and have no marking symbol for rank.
Publication date: March 2014
Ver. EED
1
DSC5002
PC  Ta
IC  VCE
150
100
50
2.1 mA
40
1.8 mA
1.5 mA
30
1.2 mA
20
0.9 mA
0.6 mA
80
120
160
0
200
0.3 mA
0
2
4
10
50
Collector current IC (mA)
IC / IB = 10
Ta = 85°C
25°C
10
102
100
50
0
12
1
40
25°C
Ta = 85°C
−40°C
20
103
10
0
0
0.2
0.4
0.6
0.8
1.0
Base-emitter voltage VBE (V)
Collector current IC (mA)
102
103
Collector current IC (mA)
Cob  VCB
VCE = 10 V
30
10
DSC5002_Cob-VCB
−40°C
1
−40°C
150
IC  VBE
1
10−2
25°C
200
DSC5002_IC-VBE
VCE(sat)  IC
10−1
8
Ta = 85°C
250
Collector-emitter voltage VCE (V)
DSC5002_VCEsat-IC
10
6
VCE = 10 V
300
1.2
Collector output capacitance
(Common base, input open circuited) Cob (pF)
40
2.7 mA
2.4 mA
10
0
Forward current transfer ratio hFE
IB = 3.0 mA
50
200
Collector current IC (mA)
Collector power dissipation PC (mW)
Ta = 25°C
Ambient temperature Ta (°C)
Collector-emitter saturation voltage VCE(sat) (V)
hFE  IC
350
60
250
0
DSC5002_hFE-IC
DSC5002_IC-VCE
DSC5002_PC-Ta
20
IE = 0
f = 1 MHz
Ta = 25°C
16
12
8
4
0
1
10
100
Collector-base voltage VCB (V)
DSC5002_fT-IC
fT  IC
Transition frequency fT (MHz)
250
200
VCE = 10 V
Ta = 25°C
150
100
50
0
0.1
1
10
100
Collector current IC (mA)
Ver. EED
2
DSC5002
SMini3-F2-B
Unit: mm
 Land Pattern (Reference) (Unit: mm)
Ver. EED
3
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