DMG302PU 25V P-CHANNEL ENHANCEMENT MODE MOSFET NEW PRODUCT Product Summary Features ID TA = +25°C -0.17A -0.15A • Low On-Resistance • Low Gate Threshold Voltage • Low Input Capacitance • Fast Switching Speed Description • Small Surfaced Mount Package • ESD Protected Gate (>6kV Human Body Model) This new generation MOSFET has been designed to minimize the onstate resistance (RDS(ON)) and yet maintain superior switching • Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) • Halogen and Antimony Free. “Green” Device (Note 3) performance, making it ideal for high efficiency power management • Qualified to AEC-Q101 Standards for High Reliability V(BR)DSS RDS(ON) -25V 10Ω @ VGS = -4.5V 13Ω @ VGS = -2.7V applications. Mechanical Data Applications • Case: SOT23 • • DC-DC Converters • Power Management Functions Case Material: Molded Plastic. UL Flammability Classification Rating 94V-0 • Moisture Sensitivity: Level 1 per J-STD-020 • Terminals: Solderable per MIL-STD-202, Method 208 e3 • Lead Free Plating (Matte Tin Finish annealed over Alloy 42 leadframe). • Terminal Connections: See Diagram • Weight: 0.008 grams (approximate) D D G ESD HBM >6kV S G Gate Protection Diode Top View Pin Configuration Top View S Equivalent Circuit Ordering Information (Note 4) Part Number DMG302PU-7 DMG302PU-13 Notes: Compliance Standard Standard Case SOT23 SOT23 Packaging 3,000/Tape & Reel 10,000/Tape & Reel 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 4. For packaging details, go to our website at http://www.diodes.com/products/packages.html. Marking Information 13P 13P Date Code Key Year Code Month Code 2011 Y Jan 1 13P = Product Type Marking Code YM = Date Code Marking for SAT (Shanghai Assembly/ Test site) YM = Date Code Marking for CAT (Chengdu Assembly/ Test site) Y or Y = Year (ex: A = 2013) M = Month (ex: 9 = September) 2012 Z Feb 2 DMG302PU Document number: DS36227 Rev. 2 - 2 Mar 3 2013 A Apr 4 May 5 2014 B Jun 6 1 of 6 www.diodes.com 2015 C Jul 7 Aug 8 2016 D Sep 9 Oct O 2017 E Nov N Dec D May 2014 © Diodes Incorporated DMG302PU Maximum Ratings (@TA = +25°C, unless otherwise specified.) Characteristic NEW PRODUCT Symbol Value Drain-Source Voltage VDSS -25 Units V Gate-Source Voltage VGSS -8 V Continuous Drain Current (Note 6) VGS = -4.5V Steady State TA = +25°C TA = +70°C ID -0.17 -0.14 A Continuous Drain Current (Note 6) VGS = -2.7V Steady State TA = +25°C TA = +70°C ID -0.15 -0.12 A IDM -0.5 A Pulsed Drain Current TP ≤ 300µs, Duty Cycle = 2%) Thermal Characteristics Characteristic Symbol (Note 5) (Note 6) Total Power Dissipation PD (Note 5) (Note 6) (Note 6) Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Case Value 0.33 0.45 Operating and Storage Temperature Range RθJA 376 275 RθJC 81 TJ, TSTG -55 to +150 Units W °C/W °C Electrical Characteristics (@TA = +25°C, unless otherwise specified.) Characteristic OFF CHARACTERISTICS (Note 7) Symbol Min Typ Max Unit Test Condition BVDSS -25 ⎯ ⎯ V VGS = 0V, ID = -250µA Zero Gate Voltage Drain Current IDSS ⎯ ⎯ -1 µA VDS = -20V, VGS = 0V Gate-Source Leakage IGSS ⎯ ⎯ -100 nA VGS = -8V, VDS = 0V VGS(th) -0.65 -0.96 -1.5 V ⎯ 2.5 10 ⎯ 3 13 Drain-Source Breakdown Voltage ON CHARACTERISTICS (Note 7) Gate Threshold Voltage Static Drain-Source On-Resistance RDS(ON) Ω VDS = VGS, ID = -250µA VGS = -4.5V, ID = -0.2A VGS = -2.7V, ID = -0.05A Forward Transfer Admittance |Yfs| ⎯ 189 ⎯ ms VDS = -5V, ID = -0.2A Diode Forward Voltage (Note 7) VSD ⎯ ⎯ -1.5 V VGS = 0V, IS = -0.2A Ciss ⎯ 27.2 ⎯ 6.1 ⎯ pF VDS = -10V, VGS = 0V f = 1.0MHz nC VDS = -5V, ID = -0.2A, VGS = -4.5V, ns VGS = -4.5V, VDD = -6V ID = -0.2A, RG = 50Ω DYNAMIC CHARACTERISTICS (Note 8) Input Capacitance Output Capacitance Coss ⎯ Reverse Transfer Capacitance Crss ⎯ 1.7 ⎯ Total Gate Charge Qg ⎯ 0.35 ⎯ Qgs ⎯ 0.08 ⎯ Gate-Drain Charge Qgd ⎯ 0.06 ⎯ Turn-On Delay Time td(on) ⎯ 4.5 ⎯ tr ⎯ 2.3 ⎯ td(off) ⎯ 24.1 ⎯ tf ⎯ 11.0 ⎯ Gate-Source Charge Rise Time Turn-Off Delay Time Fall Time Notes: 5. Device mounted on FR-4 PC board, with minimum recommended pad layout, single sided. 6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper pad layout 7. Short duration pulse test used to minimize self-heating effect. 8. Guaranteed by design. Not subject to production testing. DMG302PU Document number: DS36227 Rev. 2 - 2 2 of 6 www.diodes.com May 2014 © Diodes Incorporated DMG302PU 1.0 0.6 VGS = -4.5V VDS = -5.0V 0.9 VGS = -3.0V 0.6 VGS = -2.7V 0.5 VGS = -2.5V VGS = -2.0V 0.3 VGS = -1.5V 0.1 0.0 TA = 150°C T A = 125 °C TA = -55° C 0.4 0.3 0.2 0.1 VGS = -1.2V 0 1 2 3 4 -VDS, DRAIN -SOURCE VOLTAGE (V) Figure 1 Typical Output Characteristics 6.0 5.5 5.0 4.5 VGS = -2.7V 4.0 3.5 3.0 VGS = -4.5V 2.5 2.0 1.5 1.0 0.5 0 0 0.2 0.4 0.6 0.8 -ID, DRAIN SOURCE CURRENT (A) Figure 3 Typical On-Resistance vs. Drain Current and Gate Voltage 1 1.8 VGS = -8V ID = -500mA 1.6 1.4 VGS = -4.5V ID = -300mA 1.2 0 5 RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω) RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω) -ID, DRAIN CURRENT (A) 0.7 0.4 TA = 25°C VGS = -4.0V 1 0.8 RDS(on), DRAIN-SOURCE ON-RESISTANCE (Ω) -ID, DRAIN CURRENT (A) 0.5 VGS = -8.0V 0.2 RDS(ON), DRAIN-SOURCE ON-RESISTANCE (NORMALIZED) NEW PRODUCT 0.8 TA = 85°C 0.6 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (°C) Figure 5 On-Resistance Variation with Temperature DMG302PU Document number: DS36227 Rev. 2 - 2 3 of 6 www.diodes.com 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 -VGS, GATE-SOURCE VOLTAGE (V) Figure 2 Typical Transfer Characteristics 5 10 VGS = -4.5V 9 8 T A = 150 °C 7 6 TA = 125°C 5 T A = 85°C 4 3 T A = 25°C 2 TA = -55°C 1 0 0 0.2 0.4 0.6 0.8 -ID, DRAIN SOURCE CURRENT (A) Figure 4 Typical On-Resistance vs. Drain Current and Temperature 1 5 4.5 VGS = -4.5V ID = -300mA 4 3.5 3 2.5 VGS = -8V ID = -500mA 2 1.5 1 0.5 0 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (°C) Figure 6 On-Resistance Variation with Temperature May 2014 © Diodes Incorporated DMG302PU -IS, SOURCE CURRENT (A) VGS(TH), GATE THRESHOLD VOLTAGE (V) 1 1.1 1 -ID = 1mA 0.9 0.8 -ID = 250µA 0.7 0.6 0.8 0.6 0.4 TA= 25°C 0.2 0.5 0.4 -50 0 0 25 50 75 100 125 150 TA, AMBIENT TEMPERATURE (°C) Figure 7 Gate Threshold Variation vs. Ambient Temperature -25 0 0.3 0.6 0.9 1.2 1.5 -VSD, SOURCE-DRAIN VOLTAGE (V) Figure 8 Diode Forward Voltage vs. Current 8 100 -VGS, GATE-SOURCE VOLTAGE (V) f = 1MHz CT, JUNCTION CAPACITANCE (pF) Ciss 10 Coss Crss 1 0 5 10 15 20 -VDS, DRAIN-SOURCE VOLTAGE (V) Figure 9 Typical Junction Capacitance 25 6 VDS = -5V ID = -200mA 4 2 0 0 0.1 0.2 0.3 0.4 0.5 0.6 Qg, TOTAL GATE CHARGE (nC) Figure 10 Gate-Charge Characteristics 0.7 1 r(t), TRANSIENT THERMAL RESISTANCE NEW PRODUCT 1.2 D = 0.7 D = 0.5 D = 0.3 0.1 D = 0.9 D = 0.1 D = 0.05 D = 0.02 0.01 D = 0.01 RθJA(t) = r(t) * RθJA RθJA = 373°C/W Duty Cycle, D = t1/ t2 D = 0.005 Single Pulse 0.001 0.00001 DMG302PU Document number: DS36227 Rev. 2 - 2 0.0001 0.001 0.01 0.1 1 t1, PULSE DURATION TIMES (sec) Figure 11 Transient Thermal Resistance 4 of 6 www.diodes.com 10 100 1,000 May 2014 © Diodes Incorporated DMG302PU Package Outline Dimensions Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for latest version. A SOT23 Dim Min Max Typ A 0.37 0.51 0.40 B 1.20 1.40 1.30 C 2.30 2.50 2.40 D 0.89 1.03 0.915 F 0.45 0.60 0.535 G 1.78 2.05 1.83 H 2.80 3.00 2.90 J 0.013 0.10 0.05 K 0.903 1.10 1.00 K1 0.400 L 0.45 0.61 0.55 M 0.085 0.18 0.11 0° 8° α All Dimensions in mm NEW PRODUCT B C H K J M K1 D F L G Suggested Pad Layout Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version. Y Z Dimensions Value (in mm) Z 2.9 X 0.8 Y 0.9 2.0 C 1.35 E C X DMG302PU Document number: DS36227 Rev. 2 - 2 E 5 of 6 www.diodes.com May 2014 © Diodes Incorporated DMG302PU IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 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