Diodes DMS3012SFG-7 30v n-channel enhancement mode mosfet with schottky diode powerdiâ® Datasheet

DMS3012SFG
30V N-CHANNEL ENHANCEMENT MODE MOSFET WITH SCHOTTKY DIODE
®
POWERDI
Product Summary
V(BR)DSS
RDS(ON)
10mΩ @ VGS = 10V
30V
15mΩ @ VGS = 4.5V
Features
•
ID
TA = +25°C
Package
12A
POWERDI
3333-8
9.5A
DIOFET utilizes a unique patented process to monolithically
integrate a MOSFET and a Schottky in a single die to deliver:
 Low RDS(ON) – minimize conduction losses
 Low VSD – reducing the losses due to body diode conduction
 Low Qrr – lower Qrr of the integrated Schottky reduces body
diode switching losses
 Low gate capacitance (Qg/Qgs) ratio – reduces risk of shoot
through or cross conduction currents at high frequencies
Small form factor thermally efficient package enables higher
density end products
Description
•
This MOSFET is designed to minimize on-state resistance (RDS(on))
and yet maintain superior switching performance, making it ideal for
high efficiency power management applications.
•
Occupies just 33% of the board area occupied by SO-8, enabling
smaller end product
•
100% UIS (Avalanche) rated
•
100% Rg tested
•
•
•
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
Applications
•
•
•
Backlighting
Power Management Functions
DC-DC Converters
Mechanical Data
•
•
•
•
•
Case: POWERDI3333-8
Case Material: Molded Plastic, "Green" Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminal Connections Indicator: See diagram
Terminals: Finish - Matte Tin annealed over Copper leadframe.
Solderable per MIL-STD-202, Method 208
Weight: 0.072 grams (approximate)
Drain
Pin 1
S
S
8
7
6
5
S
G
Gate
D
D
Source
D
D
Top View
1
Bottom View
2
3
4
Top View
Pin Configuration
Internal Schematic
Ordering Information (Note 4)
Part Number
DMS3012SFG-7
DMS3012SFG-13
Notes:
Case
POWERDI3333-8
POWERDI3333-8
Packaging
2000/Tape & Reel
3000/Tape & Reel
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http”//www.diodes.com/products/packages.html.
POWERDI is a registered trademark of Diodes Incorporated.
DMS3012SFG
Document number: DS35441 Rev. 8 - 2
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July 2014
© Diodes Incorporated
DMS3012SFG
YYWW
Marking Information
N12 = Product Type Marking Code
YYWW = Date Code Marking
YY = Last digit of year (ex: 11 = 2011)
WW = Week code (01 ~ 53)
N12
Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Characteristic
Symbol
VDSS
VGSS
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (Note 6) VGS = 10V
Steady
State
t < 10s
Continuous Drain Current (Note 6) VGS = 4.5V
Steady
State
t < 10s
TA = +25°C
TA = +70°C
TA = +25°C
TA = +70°C
TA = +25°C
TA = +70°C
TA = +25°C
TA = +70°C
Pulsed Drain Current (10μs pulse, duty cycle = 1%)
Maximum Continuous Body Diode Forward Current (Note 6)
Avalanche Current (Note 7) L = 0.1mH
Avalanche Energy (Note 7) L = 0.1mH
ID
Value
30
±20
12
9.5
ID
16.0
12.7
A
ID
9.5
7.5
A
13.0
10.3
90
3.5
17
43
ID
IDM
IS
IAS
EAS
Units
V
V
A
A
A
A
A
mJ
Thermal Characteristics
Characteristic
Total Power Dissipation (Note 5)
Thermal Resistance, Junction to Ambient (Note 5)
Total Power Dissipation (Note 6)
Thermal Resistance, Junction to Ambient (Note 6)
Symbol
TA = +25°C
TA = +70°C
Steady state
t < 10s
TA = +25°C
TA = +70°C
Steady State
t < 10s
Thermal Resistance, Junction to Case (Note 6)
Operating and Storage Temperature Range
Notes:
PD
RθJA
PD
RθJA
RθJC
TJ, TSTG
Value
0.89
0.55
145
74
2.2
1.3
58
31
11
-55 to +150
Units
W
°C/W
W
°C/W
°C
5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout.
6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate.
7. IAS and EAS rating are based on low frequency and duty cycles to keep TJ = +25°C.
POWERDI is a registered trademark of Diodes Incorporated.
DMS3012SFG
Document number: DS35441 Rev. 8 - 2
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DMS3012SFG
100
P(PK), PEAK TRANSIENT POIWER (W)
-ID, DRAIN CURRENT (A)
100
10
1
0.1
0.01
0.1
1
10
-VDS, DRAIN-SOURCE VOLTAGE (V)
Fig. 1 SOA, Safe Operation Area
r(t), TRANSIENT THERMAL RESISTANCE
1
100
90
Single Pulse
RθJA = 61° C/W
RθJA(t) = r(t) * RθJA
TJ - TA = P * RθJA(t)
80
70
60
50
40
30
20
10
0
0.0001 0.001 0.01
0.1
1
10
100 1,000
t1, PULSE DURATION TIME (sec)
Fig. 2 Single Pulse Maximum Power Dissipation
D = 0.9
D = 0.7
D = 0.5
D = 0.3
0.1
D = 0.1
D = 0.05
D = 0.02
0.01
D = 0.01
RθJA(t) = r(t) * RθJA
D = 0.005
RθJA = 61°C/W
Duty Cycle, D = t1/t2
D = Single Pulse
0.001
0.00001
0.0001
0.001
1
0.01
0.1
t1, PULSE DURATION TIME (sec)
Fig. 3 Transient Thermal Resistance
10
100
1,000
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Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS (Note 8)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
ON CHARACTERISTICS (Note 8)
Gate Threshold Voltage
Symbol
Min
Typ
Max
Unit
BVDSS
IDSS
IGSS
30
—
—
—
—
—
—
100
±100
V
μA
nA
VGS = 0V, ID = 250μA
VDS = 30V, VGS = 0V
VGS = ±20V, VDS = 0V
VGS(th)
RDS (ON)
|Yfs|
VSD
1.5
7.3
10
30
0.45
2.5
10
15
—
0.55
V
Static Drain-Source On-Resistance
1.0
—
—
—
—
VDS = VGS, ID = 250μA
VGS = 10V, ID = 13.5A
VGS = 4.5V, ID = 11A
VDS = 5V, ID = 10.0A
VGS = 0V, IS = 1A
Ciss
Coss
Crss
Rg
Qg
Qg
Qgs
Qgd
tD(on)
tr
tD(off)
tf
trr
Qrr
—
—
—
0.26
—
—
—
—
—
—
—
—
—
—
1296
415
204
1.6
14.7
31.6
3.5
5.0
15.8
27.8
29.7
13.6
13.1
4.3
4310
—
—
2.6
—
—
—
—
—
—
—
—
—
—
Forward Transfer Admittance
Diode Forward Voltage
DYNAMIC CHARACTERISTICS (Note 9)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge VGS = 4.5V
Total Gate Charge VGS = 10V
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Reverse Recovery Time
Reverse Recovery Charge
Notes:
mΩ
S
V
pF
pF
pF
Ω
nC
nC
nC
nC
ns
ns
ns
ns
ns
nC
Test Condition
VDS = 15V, VGS = 0V,
f = 1.0MHz
VDS = 0V, VGS = 0V, f = 1MHz
VDS = 15V, VGS = 10V, ID = 13.5A
VGS = 10V, VDS = 15V,
RG = 3Ω, ID = 8.8A
IF = 13.5A, di/dt = 100A/μs
IF = 13.5A, di/dt = 100A/μs
8. Short duration pulse test used to minimize self-heating effect.
9. Guaranteed by design. Not subject to product testing.
30
30
VGS = 4.5V
25
20
ID, DRAIN CURRENT (A)
ID, DRAIN CURRENT (A)
25
VGS = 4.0V
VGS = 3.5V
15
VGS = 3.0V
10
VGS = 2.5V
5
20
15
VGS = 150°C
10
VGS = 25°C
VGS = -55°C
VGS = 2.0V
0.5
1
1.5
VDS, DRAIN-SOURCE VOLTAGE (V)
Fig. 4 Typical Output Characteristic
VGS = 125°C
VGS = 85°C
5
0
0
VDS = 5V
2
0
1.0
1.5
2.0
2.5
VGS, GATE-SOURCE VOLTAGE (V)
Fig. 5 Typical Transfer Characteristic
3.0
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0.05
RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω)
RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω)
DMS3012SFG
0.04
VGS = 2.5V
0.03
0.02
VGS = 4.5V
0.01
VGS = 10V
0
5
25
10
15
20
ID, DRAIN-SOURCE CURRENT (A)
Fig. 6 Typical On-Resistance
vs. Drain Current and Gate Voltage
0
TA = 125°C
TA = 85°C
TA = 25°C
TA = -55°C
0
RDSON, DRAIN-SOURCE ON-RESISTANCE (Ω)
RDSON, DRAIN-SOURCE
ON-RESISTANCE (NORMALIZED)
TA = 150°C
30
1.6
VGS = 10V
ID = 5A
1.4
VGS = 10V
ID = 10A
1.2
1.0
0.8
0.6
-50
VGS = 10V
VGS = 10V
ID = 10A
0.01
0
-50
30
2.5
25
1.0
ID = 250µA
-25
0
25
50
75 100 125 150
TA, AMBIENT TEMPERATURE (°C)
Fig. 9 On-Resistance Variation with Temperature
IS, SOURCE CURRENT (A)
VGS(TH), GATE THRESHOLD VOLTAGE (V)
VGS = 10V
ID = 5A
3.0
ID = 1mA
30
0.02
0
25
50
75 100 125 150
TA, AMBIENT TEMPERATURE (°C)
Fig. 8 On-Resistance Variation with Temperature
1.5
10
15
20
25
ID, DRAIN CURRENT (A)
Fig. 7 Typical On-Resistance
vs. Drain Current and Temperature
0.03
-25
2.0
5
0.5
20
15
TA = 25°C
10
5
0
-50 -25
0
25
50
75 100 125 150
TA, AMBIENT TEMPERATURE (°C)
Fig. 10 Gate Threshold Variation vs. Ambient Temperature
0
0
0.2
0.4
0.6
0.8
1.0
1.2
VSD, SOURCE-DRAIN VOLTAGE (V)
Fig. 11 Diode Forward Voltage vs. Current
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DMS3012SFG
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10,000
10,000
IDSS, LEAKAGE CURRENT (µA)
C, CAPACITANCE (pF)
f = 1MHz
Ciss
1,000
Coss
1,000
TA = 125°C
100
0
5
10
15
V DS, DRAIN-SOURCE VOLTAGE (V)
Fig. 12 Typical Total Capacitance
TA = 85°C
10
Crss
100
TA = 150°C
TA = 25°C
20
1
0
10
20
VDS, DRAIN-SOURCE VOLTAGE (V)
Fig. 13 Typical Leakage Current
vs. Drain-Source Voltage
30
VGS, GATE-SOURCE VOLTAGE (V)
10
8
VDS = 15V
ID = 13.5A
6
4
2
0
0
5
10
15
20
25
30
35
Qg, TOTAL GATE CHARGE (nC)
Fig. 14 Gate-Source Voltage vs. Total Gate Charge
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DMS3012SFG
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Package Outline Dimensions
Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for latest version.
A
A3
A1
D
D2
L
(4x)
1
Pin 1 ID
4
b2
(4x)
E
E2
8
Z (4x)
5
e
L1
(3x)
b (8x)
POWERDI3333-8
Dim Min Max Typ
D
3.25 3.35 3.30
E
3.25 3.35 3.30
D2 2.22 2.32 2.27
E2 1.56 1.66 1.61
A
0.75 0.85 0.80
A1
0
0.05 0.02
A3
0.203
−
−
b
0.27 0.37 0.32
b2
0.20
−
−
L
0.35 0.45 0.40
L1
0.39
−
−
e
0.65
−
−
Z
0.515
−
−
All Dimensions in mm
Suggested Pad Layout
Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version.
X
G
8
Y2
5
G1
Y1
Y
1
4
Y3
X2
Dimensions
C
G
G1
Y
Y1
Y2
Y3
X
X2
Value (in mm)
0.650
0.230
0.420
3.700
2.250
1.850
0.700
2.370
0.420
C
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DMS3012SFG
Document number: DS35441 Rev. 8 - 2
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IMPORTANT NOTICE
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INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the
application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or
trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume
all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated
website, harmless against all damages.
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Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and
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indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.
Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings
noted herein may also be covered by one or more United States, international or foreign trademarks.
This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the
final and determinative format released by Diodes Incorporated.
LIFE SUPPORT
Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express
written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
A. Life support devices or systems are devices or systems which:
1. are intended to implant into the body, or
2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the
labeling can be reasonably expected to result in significant injury to the user.
B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the
failure of the life support device or to affect its safety or effectiveness.
Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and
acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any
use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related
information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its
representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.
Copyright © 2014, Diodes Incorporated
www.diodes.com
POWERDI is a registered trademark of Diodes Incorporated.
DMS3012SFG
Document number: DS35441 Rev. 8 - 2
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www.diodes.com
July 2014
© Diodes Incorporated
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