Diodes DMP3007SFG-7 P-channel enhancement mode mosfet Datasheet

DMP3007SFG
Green
30V P-CHANNEL ENHANCEMENT MODE MOSFET
POWERDI
RDS(ON) Max
ID Max
TC = +25°C
6mΩ @ VGS = -10V
-70A
13mΩ @ VGS = -4.5V
-45A
BVDSS
-30V
Features and Benefits
Low RDS(ON) – Ensures on State Losses are Minimized

Small Form Factor Thermally Efficient Package Enables Higher
Density End Products
Occupies Just 33% of the Board Area Occupied By SO-8 Enabling
Smaller End Product
ESD Protected Gate
Lead-Free Finish; RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)

Description
This MOSFET is designed to minimize the on-state resistance
(RDS(ON)) and yet maintain superior switching performance, making it
Mechanical Data


ideal for high efficiency power management applications.
Case: PowerDI3333-8
Case Material: Molded Plastic, "Green" Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminal Connections Indicator: See Diagram
Terminals: Finish  Matte Tin Annealed Over Copper Leadframe.
Solderable per MIL-STD-202, Method 208
Weight: 0.030 grams (Approximate)



Applications







Backlighting
Power Management Functions
DC-DC Converters

D
Pin 1
S
S
S
G
G
D
D
ESD PROTECTED
Gate Protection
Diode
D
D
Top View
S
Equivalent Circuit
Bottom View
Ordering Information (Note 4)
Part Number
DMP3007SFG-7
DMP3007SFG-13
Notes:
Case
PowerDI3333-8
PowerDI3333-8
Packaging
2,000/Tape & Reel
3,000/Tape & Reel
1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. All applicable RoHS exemptions applied.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
YYWW
ADVANCE INFORMATION
Product Summary
V08= Product Type Marking Code
YYWW = Date Code Marking
YY = Last Two Digits of Year (ex: 16 = 2016)
WW = Week Code (01 to 53)
V08
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DMP3007SFG
Document number: DS39018 Rev. 2 - 2
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September 2016
© Diodes Incorporated
DMP3007SFG
Maximum Ratings (@TA = +25°C, unless otherwise specified.)
ADVANCE INFORMATION
Characteristic
Symbol
Value
Unit
Drain-Source Voltage
VDSS
-30
V
Gate-Source Voltage
VGSS
±25
V
ID
-70
-55
A
Continuous Drain Current (Note 7) VGS = -10V
Steady
State
TC = +25°C
TC = +70°C
Maximum Continuous Body Diode Forward Current (Note 6)
IS
-3.0
A
IDM
-120
A
Avalanche Current (Notes 8) L = 1mH
IAS
-16
A
Avalanche Energy (Notes 8) L = 1mH
EAS
130
mJ
Pulsed Drain Current (10µs Pulse, Duty Cycle = 1%)
Thermal Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
Symbol
Value
Unit
TA = +25°C
PD
1.2
W
Steady State
RθJA
105
°C/W
TA = +25°C
PD
2.8
W
Steady State
RθJA
45
°C/W
RθJC
3.0
°C/W
TJ, TSTG
-55 to +150
°C
Total Power Dissipation (Note 5)
Thermal Resistance, Junction to Ambient (Note 5)
Total Power Dissipation (Note 6)
Thermal Resistance, Junction to Ambient (Note 6)
Thermal Resistance, Junction to Case (Note 7)
Operating and Storage Temperature Range
Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS (Note 9)
Drain-Source Breakdown Voltage
Symbol
Min
Typ
Max
Unit
Test Condition
BVDSS
-30
—
—
V
VGS = 0V, ID = -250μA
Zero Gate Voltage Drain Current
IDSS
—
—
-1
μA
VDS = -24V, VGS = 0V
Gate-Source Leakage
IGSS
—
—
±10
μA
VGS = ±20V, VDS = 0V
VGS(TH)
-1.0
—
-3.0
V
VDS = VGS, ID = -250μA
—
4.3
6
ON CHARACTERISTICS (Note 9)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Diode Forward Voltage
RDS(ON)
mΩ
—
6.6
13
VSD
—
-0.7
-1.2
V
VGS = -10V, ID = -11.5A
VGS = -4.5V, ID = -8.5A
VGS = 0V, IS = -1A
DYNAMIC CHARACTERISTICS (Note 10)
Ciss
—
2826
—
pF
Output Capacitance
Coss
—
606
—
pF
Reverse Transfer Capacitance
Crss
—
305
—
pF
Gate Resistance
Rg
—
23
—
Ω
Total Gate Charge (VGS = -4.5V)
Qg
—
31.2
—
nC
Total Gate Charge (VGS = -10V)
Qg
—
64.2
—
nC
Gate-Source Charge
Qgs
—
10.6
—
nC
Input Capacitance
Qgd
—
11.6
—
nC
tD(ON)
—
4.8
—
ns
Turn-On Rise Time
tR
—
4.3
—
ns
Turn-Off Delay Time
tD(OFF)
—
306
—
ns
tF
—
125
—
ns
Reverse Recovery Time
tRR
—
19
—
ns
Reverse Recovery Charge
QRR
—
9.8
—
nC
Gate-Drain Charge
Turn-On Delay Time
Turn-Off Fall Time
Notes:
VDS = -15V, VGS = 0V,
f = 1.0MHz
VDS = 0V, VGS = 0V, f = 1.0MHz
VDS = -15V, ID = -11.5A
VDD = -15V, VGS = -10V,
Rg = 6Ω, ID = -11.5A
IS = -11.5A, dI/dt = 100A/μs
5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout.
6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate.
7. Thermal resistance from junction to soldering point (on the exposed drain pad).
8. IAS and EAS rating are based on low frequency and duty cycles to keep TJ = +25°C.
9. Short duration pulse test used to minimize self-heating effect.
10. Guaranteed by design. Not subject to product testing.
POWERDI is a registered trademark of Diodes Incorporated.
DMP3007SFG
Document number: DS39018 Rev. 2 - 2
2 of 7
www.diodes.com
September 2016
© Diodes Incorporated
DMP3007SFG
30
30.0
VGS = -3.5V
ID, DRAIN CURRENT (A)
ID, DRAIN CURRENT (A)
25
VGS = -4.5V
20.0
VGS = -10.0V
15.0
VGS =-3.0V
10.0
VGS = -2.7V
5.0
20
15
TJ=125℃
10
TJ=85℃
TJ=25℃
TJ=150℃
5
VGS = -2.5V
TJ=-55℃
0
0.0
0.5
1
1.5
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 1. Typical Output Characteristic
0
2
10.00
0.5
1 1.5 2 2.5 3 3.5 4 4.5
VGS, GATE-SOURCE VOLTAGE (V)
Figure 2. Typical Transfer Characteristic
5
30
RDS(ON), DRAIN-SOURCE ON-RESISTANCE
(mW)
RDS(ON), DRAIN-SOURCE ON-RESISTANCE
(mW)
0
9.00
8.00
VGS = -4.5V
7.00
6.00
5.00
4.00
VGS = -10V
3.00
2.00
1.00
0.00
0
5
10
15
20
25
ID, DRAIN-SOURCE CURRENT (A)
25
ID = -11.5A
20
15
10
5
ID = -8.5A
0
0
30
5
10
15
20
25
VGS, GATE-SOURCE VOLTAGE (V)
Figure 3. Typical On-Resistance vs. Drain Current and
Gate Voltage
Figure 4. Typical Transfer Characteristic
2
8
VGS = -10V
1.8
7
150℃
RDS(ON), DRAIN-SOURCE ONRESISTANCE (NORMALIZED)
RDS(ON), DRAIN-SOURCE ON-RESISTANCE
(W)
ADVANCE INFORMATION
VDS = -5V
VGS=-4.0V
25.0
6
125℃
5
85℃
4
25℃
3
-55℃
2
1
VGS = -10V, ID = -11.5A
1.6
1.4
1.2
1
VGS = -4.5V, ID = -8.5A
0.8
0.6
0.4
0
0
5
10
15
20
25
30
ID, DRAIN CURRENT (A)
Figure 5. Typical On-Resistance vs. Drain Current and
Temperature
-50
-25
0
25
50
75
100 125 150
TJ, JUNCTION TEMPERATURE (℃)
Figure 6. On-Resistance Variation with Temperature
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DMP3007SFG
Document number: DS39018 Rev. 2 - 2
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3
VGS(TH), GATE THRESHOLD VOLTAGE (V)
RDS(ON), DRAIN-SOURCE ON-RESISTANCE (W)
12
10
VGS = -4.5V, ID = -8.5A
8
6
4
VGS = -10V, ID = -11.5A
2
0
-50
-25
0
25
50
75
100
125
2.5
ID = -1mA
2
1.5
ID = -250μA
1
0.5
0
150
-50
TJ, JUNCTION TEMPERATURE (℃)
30
150
10000
f=1MHz
CT, JUNCTION CAPACITANCE (pF)
VGS = 0V
25
Is, SOURCE CURRENT (A)
-25
0
25
50
75
100 125
TJ, JUNCTION TEMPERATURE (℃)
Figure 8. Gate Threshold Variation vs. Junction
Temperature
Figure 7. On-Resistance Variation with Temperature
20
15
10
TJ =
TJ = 85oC
125oC
TJ = 25oC
TJ = 150oC
5
Ciss
1000
Coss
Crss
TJ = -55oC
0
100
0
0.3
0.6
0.9
1.2
0
VSD, SOURCE-DRAIN VOLTAGE (V)
Figure 9. Diode Forward Voltage vs. Current
2
4
6
8
10
VDS, DRAIN-SOURCE VOLTAGE (V)
12
Figure 10. Typical Junction Capacitance
1000
10
RDS(ON) Limited
9
PW =100µs
ID, DRAIN CURRENT (A)
8
7
VGS (V)
ADVANCE INFORMATION
DMP3007SFG
6
5
4
3
VDS = -15V, ID = -11.5A
2
100
10
1
0.1
1
0
0.01
0
10
20
30
40
Qg (nC)
50
60
70
Figure 11. Gate Charge
PW =1ms
PW =10ms
PW =100ms
PW =1s
TJ(Max) = 150℃ TC = 25℃
Single Pulse
PW =10s
DUT on 1*MRP Board
DC
VGS= -10V
0.01
0.1
1
10
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 12. SOA, Safe Operation Area
100
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DMP3007SFG
Document number: DS39018 Rev. 2 - 2
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DMP3007SFG
r(t), TRANSIENT THERMAL RESISTANCE
ADVANCE INFORMATION
1
D=0.7
D=0.5
D=0.3
D=0.9
0.1
D=0.1
D=0.05
D=0.02
0.01
D=0.01
D=0.005
RθJA(t) = r(t) * RθJA
RθJA = 98℃/W
Duty Cycle, D = t1 / t2
D=Single Pulse
0.001
0.0001
0.001
0.01
0.1
1
10
t1, PULSE DURATION TIME (sec)
100
1000
Figure 13. Transient Thermal Resistance
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DMP3007SFG
Document number: DS39018 Rev. 2 - 2
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DMP3007SFG
Package Outline Dimensions
ADVANCE INFORMATION
Please see http://www.diodes.com/package-outlines.html for the latest version.
PowerDI3333-8
A3
A1
A
Seating Plane
D
L(4x)
D2
1
Pin #1 ID
E4
b2(4x)
E
E3
E2
L1(3x)
8
z(4x)
b
PowerDI3333-8
Dim Min Max Typ
A
0.75 0.85 0.80
A1 0.00 0.05 0.02
A3

 0.203
b
0.27 0.37 0.32
b2 0.15 0.25 0.20
D
3.25 3.35 3.30
D2 2.22 2.32 2.27
E
3.25 3.35 3.30
E2 1.56 1.66 1.61
E3 0.79 0.89 0.84
E4 1.60 1.70 1.65
e
0.65


L
0.35 0.45 0.40
L1
0.39


z

 0.515
All Dimensions in mm
e
Suggested Pad Layout
Please see http://www.diodes.com/package-outlines.html for the latest version.
PowerDI3333-8
X3
X2
8
Y2
X1
Y1
Y3
Y
Dimensions Value (in mm)
C
0.650
X
0.420
X1
0.420
X2
0.230
X3
2.370
Y
0.700
Y1
1.850
Y2
2.250
Y3
3.700
1
X
C
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DMP3007SFG
Document number: DS39018 Rev. 2 - 2
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ADVANCE INFORMATION
IMPORTANT NOTICE
DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT,
INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).
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without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the
application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or
trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume
all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated
website, harmless against all damages.
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final and determinative format released by Diodes Incorporated.
LIFE SUPPORT
Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express
written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
A. Life support devices or systems are devices or systems which:
1. are intended to implant into the body, or
2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the
labeling can be reasonably expected to result in significant injury to the user.
B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the
failure of the life support device or to affect its safety or effectiveness.
Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and
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use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related
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representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.
Copyright © 2016, Diodes Incorporated
www.diodes.com
POWERDI is a registered trademark of Diodes Incorporated.
DMP3007SFG
Document number: DS39018 Rev. 2 - 2
7 of 7
www.diodes.com
September 2016
© Diodes Incorporated
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