CXDM3069N SURFACE MOUNT N-CHANNEL ENHANCEMENT-MODE SILICON MOSFET w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CXDM3069N is a high current N-channel enhancement-mode silicon MOSFET, designed for high speed pulsed amplifier and driver applications. This MOSFET offers high current, low rDS(ON), low threshold voltage, and low leakage current. MARKING: FULL PART NUMBER SOT-89 CASE APPLICATIONS: • Load/Power switches • Power supply converter circuits • Battery powered portable equipment FEATURES: • Low rDS(ON) (50mΩ MAX @ VGS=2.5V) • High current (ID=6.9A) • Logic level compatibility MAXIMUM RATINGS: (TA=25°C) Drain-Source Voltage Gate-Source Voltage SYMBOL VDS VGS ID Continuous Drain Current (Steady State) Maximum Pulsed Drain Current, tp=10μs Power Dissipation Operating and Storage Junction Temperature Thermal Resistance IDM PD TJ, Tstg ΘJA VGS(th) rDS(ON) rDS(ON) rDS(ON) Qg(tot) VGS=0, ID=250μA VGS=VDS, ID=250μA VGS=10V, ID=7.0A VGS=4.5V, ID=6.0A VGS=2.5V, ID=4.0A VDS=15V, VGS=10V, ID=5.4A VDS=15V, VGS=10V, ID=5.4A UNITS V V 6.9 A 40 A 1.2 W -55 to +150 °C 104 °C/W ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted) SYMBOL TEST CONDITIONS MIN TYP IGSSF, IGSSR VGS=12V, VDS=0 IDSS VDS=24V, VGS=0 BVDSS 30 12 MAX 100 UNITS nA 1.0 μA 0.9 1.4 V 25 30 mΩ 28 35 mΩ 38 50 mΩ 30 0.7 V 11 nC 1.0 nC 1.2 nC 47 pF 580 pF 42 pF ton VDS=15V, VGS=0, f=1.0MHz VDD=15V, ID=1.0A, RG=15Ω 20 ns toff VDD=15V, ID=1.0A, RG=15Ω 28 ns Qgs Qgd Crss Ciss Coss VDS=15V, VGS=10V, ID=5.4A VDS=15V, VGS=0, f=1.0MHz VDS=15V, VGS=0, f=1.0MHz R1 (10-August 2012) CXDM3069N SURFACE MOUNT N-CHANNEL ENHANCEMENT-MODE SILICON MOSFET SOT-89 CASE - MECHANICAL OUTLINE PIN CONFIGURATION LEAD CODE: 1) Gate 2) Drain 3) Source MARKING: FULL PART NUMBER R1 (10-August 2012) w w w. c e n t r a l s e m i . c o m