DYELEC DMF7N70-TU 700v n-channel power mosfet Datasheet

7N70
700V N-Channel Power MOSFET
●
●
●
●
●
RDS(ON), VGS@10V,[email protected]<1.6Ω
Fast switching capability
Low gate charge
Lead free in compliance with EU RoHS directive.
Green molding compound
PRODUCT SUMMARY
VDS (V)
Current(A)
7
700
RDS(on)(Ω)
1.6 @ VGS =10V
Pin Definition:
●
1. Gate
2. Drain
3. Source
Case: TO-220,ITO-220,TO-262,TO-263 Package
Ordering Information
Package
Packing
DMT7N70-TU
TO-220
50pcs / Tube
DMF7N70-TU
ITO-220
50pcs / Tube
DMK7N70-TU
TO-262
50pcs / Tube
DMG7N70-TU
TO-263
50pcs / Tube
DMG7N70-TR
TO-263
800pcs / 13" Reel
Part No.
Block Diagram
D
G
S
ABSOLUTE MAXIMUM RATINGS (TC=25°C, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
VDSS
700
V
Gate-Source Voltage
VGSS
±30
Continuous Drain Current
ID
7
V
A
Pulsed Drain Current
IDM
28
A
Single Pulse Avalanche Energy (Note 1)
EAS
530
mJ
TO-220/TO-262/TO-263
Power Dissipation
ITO-220
142
W
45
W
PD
Junction Temperature
TJ
+150
Operating Temperature
TOPR
-55 ~ +150
Storage Temperature
TSTG
-55 ~ +150
NOTES :
1. L=19.5mH, IAS=7A, VDD=50V, RG=25ohm, Starting TJ=25oC
2. Pulse width<300us, Duty cycle<2%
3. Essentially independent of operating temperature typical characteristics.
4. Guaranteed by design, not subject to production testing
May.2015-REV.00
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°C
°C
°C
1/7
7N70
700V N-Channel Power MOSFET
THERMAL DATA
PARAMETER
Junction to Ambient
SYMBOL
RATING
UNIT
θJA
62.5
°C/W
TO-220/TO-262/TO-263
ITO-220
0.9
TO-220/TO-262/TO-263
Junction to Case
θJC
ITO-220
°C/W
2.6
ELECTRICAL CHARACTERISTICS (TC=25°C, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITION
MIN.
TYP.
MAX.
UNITS
-
-
V
Static
Drain-Source Breakdown Voltage
BVDSS
VGS=0V,ID=250uA
700
Gate Threshold Voltage
VGS(th)
VDS=VGS,ID=250uA
2
-
4
V
1.6
Ω
RDS(on)
VGS=10V,ID=3.5A
-
1.4
Zero Gate Voltage Drain Current
IDSS
VDS=700V,VGS=0V
-
-
1.0
uA
Gate-Source Leakage Current
IGSS
VGS=+30V,VDS=0V
-
-
+100
nA
Diode Forward Voltage
VSD
IS=7A,VGS=0V
-
-
1.4
V
-
163
-
-
12
-
-
30
-
-
1200
1600
-
150
190
-
60
80
-
60
80
-
200
230
-
280
350
-
250
300
Drain-Source On-State Resistance
Dynamic
(Note 4)
Total Gate Charge
Qg
Gate-Source Charge
Qgs
Gate-Drain Charge
Qgd
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
Turn-On Delay Time
td(on)
Turn-On Rise Time
tr
Turn-Off Delay Time
td(off)
Turn-Off Fall Time
VDS=100V, ID=7A,
VGS=10V (Note 2,3)
VDS=25V, VGS=0V,
f=1.0MHZ
VDD=30V, ID=1A,
RG=25Ω (Note 2,3)
tf
nC
pF
ns
Drain-Source Diode
Maximum Continuous Drain-Source
Diode Forward Current
Maximum Pulsed Drain-Source
Diode Forward Current
Reverse Recovery Time
Reverse Recovery Charge
May.2015-REV.00
IS
---
-
-
6
A
ISM
---
-
-
24
A
-
320
-
ns
-
2.4
-
uC
trr
Qrr
VGS=0V, IS=7A
dIF/ dt=100A/us
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(Note 2)
2/7
7N70
700V N-Channel Power MOSFET
TYPICAL CHARACTERISTICS
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3/7
7N70
700V N-Channel Power MOSFET
TYPICAL CHARACTERISTICS
On State Current vs.
Allowable Case Temperature
1
0.1
Notes:
1. θJC (t) = 0.88℃/W Max.
2. Duty Factor, D=t1/t2
3. TJM-TC=PDM×θJC (t)
0.01
1E-5 1E-4 1E-3 0.01 0.1 1 10
Square Wave Pulse Duration, t1 (sec)
May.2015-REV.00
Reverse Drain Current, IDR (A)
Thermal Response, θJC (t)
Transient Thermal Response Curve
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10
150℃
25℃
1
Notes:
1. GS=0V
2. 250µs Test
0.1
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8
Source-Drain Voltage, VSD (V)
4/7
7N70
700V N-Channel Power MOSFET
TO-220 Mechanical Drawing
ITO-220 Mechanical Drawing
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7N70
700V N-Channel Power MOSFET
TO-262 Mechanical Drawing
TO-263 Mechanical Drawing
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7N70
700V N-Channel Power MOSFET
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