ETC BMT1720B20 Silicon microwave power transistor Datasheet

BIPOLARICS, INC
Part Number BMT1720B20
SILICON MICROWAVE POWER TRANSISTOR
PRODUCT DATA SHEET
FEATURES:
• Common Base, Class C Package Configuration
• High Output Power
20 W @ 1.7 to 2.0 GHz
• High Gain Bandwidth Product
f = 6.0 GHz @ IC = 3200 mA
t
• High Gain
GPE = 7.0 dB to 8.2 dB
• High Reliability
Gold Metallization
Nitride Passivation
• Diffused Ballast Resistors
• BeO Package
• Built-In Matching Network
Absolute Maximum Ratings:
for Broadband Operation
PERFORMANCE DATA:
• Electrical Characteristics (TA = 25oC)
SYMBOL
SYMBOL
PARAMETERS
VCBO
Collector-Base Voltage
50
V
VCEO
VEBO
IC
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current (instantaneous)
28
3.5
3200
V
V
mA
T
Junction Temperature
200
J
RATING
TSTG
Storage Temperature
θJC
Thermal Resistance
PARAMETERS & CONDITIONS
UNIT
-65 to 200
6.5
MIN.
TYP.
UNITS
o
C
o
C
C/W
MAX.
VCE =28V, I C = 3200 mA, Class C
P1dB
Power output at 1 dB compression:
f = 1.7 GHz
W
20
η
Collector Efficiency
Class C
%
50
hFE
Forward Current Transfer Ratio: VCB = 5V, IC = 100 mA
COB
PT
Output Capacitance:
Total Power Dissipation
f = 1 MHz, I E = 0
10
60
pF
4.5
W
40
100
PAGE 2
BIPOLARICS, INC.
Part Number BMT1720B20
SILICON MICROWAVE POWER TRANSISTOR
PAGE 3
BIPOLARICS, INC.
Part Number BMT1720B20
SILICON MICROWAVE POWER TRANSISTOR
PAGE 4
BIPOLARICS, INC.
Part Number BMT1720B20
SILICON MICROWAVE POWER TRANSISTOR
PAGE 5
BIPOLARICS, INC.
Part Number BMT1720B20
SILICON MICROWAVE POWER TRANSISTOR
25 Package: 0.250" 2 Lead Flange
NOTES: (unless otherwise specified)
in
1. Dimensions are
(mm)
2. Tolerances:
in .xxx = ± .005
mm .xx = ± .13
3. All dimensions nominal; subject to change
without notice
LEAD
25 Package
1
Emitter
2
Base
3
4
Collector
Base
BIPOLARICS, INC.
602 Charcot Ave.
San Jose, CA 94538
Phone: (408) 456-0430 FAX: (408) 456-0431
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