DISCRETE SEMICONDUCTORS DATA SHEET BYV29F, BYV29X series Rectifier diodes ultrafast Product specification February 1999 NXP Semiconductors Product specification Rectifier diodes ultrafast FEATURES BYV29F, BYV29X series SYMBOL QUICK REFERENCE DATA VR = 300 V/ 400 V/ 500 V • Low forward volt drop • Fast switching • Soft recovery characteristic • High thermal cycling performance • Isolated mounting tab k 1 VF ≤ 1.03 V a 2 IF(AV) = 9 A trr ≤ 60 ns GENERAL DESCRIPTION Ultra-fast epitaxial rectifier diodes intended for use in switched mode power supply output rectification, electronic lighting ballasts and high frequency switching circuits in general. The BYV29F series is supplied in the SOD100 package. The BYV29X series is supplied in the SOD113 package. PINNING SOD100 PIN SOD113 DESCRIPTION case 1 cathode (k) 2 anode (a) tab case isolated 1 2 1 2 LIMITING VALUES Limiting values in accordance with the Absolute Maximum System (IEC 134). SYMBOL PARAMETER VRRM VR Peak repetitive reverse voltage Continuous reverse voltage IF(AV) Average forward current2 IFSM Non-repetitive peak forward current Tstg Tj Storage temperature Operating junction temperature CONDITIONS MIN. BYV29F/BYV29X Ths ≤ 138˚C1 square wave; δ = 0.5; Ths ≤ 90 ˚C t = 10 ms t = 8.3 ms sinusoidal; with reapplied VRRM(max) - MAX. -300 300 300 -400 400 400 UNIT -500 500 500 V V - 9 A - 100 110 A A -40 - 150 150 ˚C ˚C 1 Ths de-rating for thermal stability. 2 Neglecting switching and reverse current losses February 1999 1 Rev 1.400 NXP Semiconductors Product specification Rectifier diodes ultrafast BYV29F, BYV29X series ISOLATION LIMITING VALUE & CHARACTERISTIC Ths = 25 ˚C unless otherwise specified SYMBOL PARAMETER CONDITIONS Visol Peak isolation voltage from all terminals to external heatsink SOD100 package; R.H. ≤ 65%; clean and dustfree MIN. Visol Cisol TYP. MAX. UNIT - - 1500 V R.M.S. isolation voltage from SOD113 package; f = 50-60 Hz; all terminals to external sinusoidal waveform; R.H. ≤ 65%; clean heatsink and dustfree - - 2500 V Capacitance from pin 2 to external heatsink - 10 - pF MIN. TYP. MAX. UNIT - 55 5.5 7.2 - K/W K/W K/W MIN. TYP. MAX. UNIT - 0.90 1.05 1.20 2.0 0.1 40 1.03 1.25 1.40 50 0.35 60 V V V µA mA nC - 50 60 ns - 4.0 5.5 A - 2.5 - V f = 1 MHz THERMAL RESISTANCES SYMBOL PARAMETER CONDITIONS Rth j-hs Thermal resistance junction to heatsink Thermal resistance junction to ambient with heatsink compound without heatsink compound in free air. Rth j-a ELECTRICAL CHARACTERISTICS Tj = 25 ˚C unless otherwise stated SYMBOL PARAMETER CONDITIONS VF Forward voltage IR Reverse current Qs Reverse recovery charge trr Reverse recovery time Irrm Peak reverse recovery current Vfr Forward recovery voltage IF = 8 A; Tj = 150˚C IF = 8 A IF = 20 A VR = VRRM VR = VRRM; Tj = 100 ˚C IF = 2 A to VR ≥ 30 V; dIF/dt = 20 A/µs IF = 1 A to VR ≥ 30 V; dIF/dt = 100 A/µs IF = 10 A to VR ≥ 30 V; dIF/dt = 50 A/µs; Tj = 100˚C IF = 10 A; dIF/dt = 10 A/µs February 1999 2 Rev 1.400 NXP Semiconductors Product specification Rectifier diodes ultrafast I dI F BYV29F, BYV29X series 12 F dt Q I 95 1.9 2.2 rr 8 6 117 4 128 2 139 100% 10% s 106 2.8 4 rrm 0 Fig.1. Definition of trr, Qs and Irrm I 84 a = 1.57 10 time R Ths(max) / C Vo = 0.89V Rs = 0.019 Ohms t I BYV29 PF / W 0 2 4 IF(AV) / A 6 8 150 10 Fig.4. Maximum forward dissipation PF = f(IF(AV)); sinusoidal current waveform where a = form factor = IF(RMS) / IF(AV). trr / ns 1000 F IF=10 A 100 1A time VF 10 V Tj = 25 C Tj = 100C fr VF 1 time Ths(max) / C BYV29 PF / W Vo = 0.8900 V Rs = 0.0190 Ohms 100 10 dIF/dt (A/us) Fig.5. Maximum trr at Tj = 25˚C and 100˚C Fig.2. Definition of Vfr 15 1 10 67.5 Irrm / A D = 1.0 IF=10A 0.5 1 95 10 0.2 IF=1A 0.1 5 tp I D= T 0 0 5 IF(AV) / A 10 tp T 0.1 122.5 t 0.01 150 15 1 10 -dIF/dt (A/us) 100 Fig.6. Maximum Irrm at Tj = 25˚C and 100˚C. Fig.3. Maximum forward dissipation PF = f(IF(AV)); square wave where IF(AV) =IF(RMS) x √D. February 1999 Tj = 25 C Tj = 100C 3 Rev 1.400 NXP Semiconductors Product specification Rectifier diodes ultrafast BYV29F, BYV29X series BYW29 IF / A 30 10 Transient thermal impedance, Zth j-hs (K/W) Tj=150 C Tj=25 C 1 20 0.1 typ max 10 PD 0.01 0 0.5 0 1 VF / V 1.5 0.001 1us 2 Fig.7. Typical and maximum forward characteristic IF = f(VF); parameter Tj 1000 tp D= T 10us tp T t 100us 1ms 10ms 100ms 1s pulse width, tp (s) BYV29F 10s Fig.9. Transient thermal impedance Zth j-hs= f(tp) Qs / nC IF = 10 A 100 2A 10 1 1.0 10 -dIF/dt (A/us) 100 Fig.8. Maximum Qs at Tj = 25˚C February 1999 4 Rev 1.400 NXP Semiconductors Product specification Rectifier diodes ultrafast BYV29F, BYV29X series MECHANICAL DATA Dimensions in mm 10.2 max 5.7 max 3.2 3.0 Net Mass: 2 g 4.4 max 0.9 0.5 2.9 max 4.4 4.0 7.9 7.5 17 max seating plane 3.5 max not tinned 4.4 13.5 min k 0.4 a 0.9 0.7 M 0.55 max 1.3 5.08 top view Fig.10. SOD100; The seating plane is electrically isolated from all terminals. Notes 1. Refer to mounting instructions for F-pack envelopes. 2. Epoxy meets UL94 V0 at 1/8". February 1999 5 Rev 1.400 NXP Semiconductors Product specification Rectifier diodes ultrafast BYV29F, BYV29X series MECHANICAL DATA Dimensions in mm 10.3 max 4.6 max Net Mass: 2 g 3.2 3.0 2.9 max 2.8 Recesses (2x) 2.5 0.8 max. depth 6.4 15.8 19 max. max. 15.8 max seating plane 3 max. not tinned 3 2.5 13.5 min. 1 0.4 2 M 1.0 (2x) 0.6 2.54 0.9 0.7 0.5 2.5 5.08 Fig.11. SOD113; The seating plane is electrically isolated from all terminals. Notes 1. Refer to mounting instructions for F-pack envelopes. 2. Epoxy meets UL94 V0 at 1/8". February 1999 6 Rev 1.400 NXP Semiconductors Legal information DATA SHEET STATUS DOCUMENT STATUS(1) PRODUCT STATUS(2) DEFINITION Objective data sheet Development This document contains data from the objective specification for product development. Preliminary data sheet Qualification This document contains data from the preliminary specification. Product data sheet Production This document contains the product specification. Notes 1. 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