CTL0353PS-R3 P-Channel Enhancement MOSFET Features Description Drain-Source Breakdown Voltage VDSS - 30 V The CTL0353PS-R3 is the P-Channel logic enhancement Drain-Source On-Resistance mode power field effect transistors are produced using RDS(ON) 58m, at VGS= -10V, ID= -3.2A high cell density, DMOS trench technology. This high RDS(ON) 75m, at VGS= -4.5V, ID= -2.5A density process is especially tailored to minimize on-state Continuous Drain Current at T C=25℃ ID = -3.0A Advanced high cell density Trench Technology RoHS Compliance & Halogen Free resistance. These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management and other battery powered circuits where low in-line power loss are needed in a very small outline surface mount package. Applications Power Management Lithium Ion Battery Package Outline Schematic Drain Drain Gate Gate Source CT Micro Proprietary & Confidential Source Page 1 Rev 1 Nov, 2013 CTL0353PS-R3 P-Channel Enhancement MOSFET Absolute Maximum Rating at 25oC Symbol Parameters Test Conditions Min Notes VDS Drain-Source Voltage -20 V VGS Gate-Source Voltage ±20 V ID Continuous Drain Current -3.0 A 1 IDM Pulsed Drain Current -12 A 1 PD Total Power Dissipation 1.04 W 2 TSTG Storage Temperature Range -55 to 150 °C TJ Operating Junction Temperature Range -55 to 150 °C Thermal Characteristics Symbol RӨJA4 Parameters Test Conditions Min Typ Max -- 120 -- Thermal Resistance Junction-Ambient (t=10s) CT Micro Proprietary & Confidential Page 2 Units oC /W Notes 1,4 Rev 1 Nov, 2013 CTL0353PS-R3 P-Channel Enhancement MOSFET Electrical Characteristics T A = 25°C (unless otherwise specified) Static Characteristics Symbol Parameters Test Conditions Min Typ Max Units BVDSS Drain-Source Breakdown Voltage VGS= 0V, ID= -250μA -30 - - V IDSS Drain-Source Leakage Current VDS = -30V, VGS = 0V - - -1 µA IGSS Gate-Source Leakage Current VGS = ±20V, VDS = 0V - - ±100 nA Notes On Characteristics Symbol Parameters RDS(ON) Drain-Source On-Resistance VGS(th) Gate-Source Threshold Voltage Test Conditions Min Typ Max Units Notes VGS = -10V, ID = -3.2A - 58 70 mΩ VGS = -4.5V, ID = -2.5A - 75 95 mΩ VGS = VDS, I ID =-250μA -1 --- -3 V 3 Units Notes 3 Dynamic Characteristics Symbol Parameters Test Conditions Min Typ Max CISS Input Capacitance VGS =0V, - 460 - COSS Output Capacitance VDS=-10V, VDS =-15V - 74 - CRSS Reverse Transfer Capacitance f=1MHz - 23 - Min Typ Max VDS = -15V , - 33 - Switching Characteristics f=1MHz Symbol Parameters TD(ON) Turn-On Delay Time TR Rise Time VGS = -10V, - 17 - TD(OFF) Turn-Off Delay Time RG = 6Ω, - 39 - TF Fall Time RL= 15Ω, - 5 - QG Total Gate Charge VDS = -15V , - 6.8 - QGS Gate-Source Charge VGS = -4.5V, - 2.8 - QGD Gate-Drain Charge ID = -1.7A - 2.3 - CT Micro Proprietary & Confidential pF Test Conditions Page 3 Units Notes ns nC Rev 1 Nov, 2013 CTL0353PS-R3 P-Channel Enhancement MOSFET Drain-Source Diode Characteristics Symbol Parameters Test Conditions Min Typ Max Units VSD Body Diode Forward Voltage VGS = 0V, ID = -1A - -0.8 -1.2 V ISD Body Diode Continuous Current - - -1 A Notes 1 Note: 1. The power dissipation is limited by 150℃ junction temperature. 2. Device mounted on a glass-epoxy board FR-4 25.4 × 25.4 mm . 2 Oz Copper Actual Size 3. The data tested by pulsed , pulse width ≦ 300μs , duty cycle ≦ 2% 4. Thermal Resistance follow JESD51-3. CT Micro Proprietary & Confidential Page 4 Rev 1 Nov, 2013 CTL0353PS-R3 P-Channel Enhancement MOSFET Typical Characteristic Curves CT Micro Proprietary & Confidential Page 5 Rev 1 Nov, 2013 CTL0353PS-R3 P-Channel Enhancement MOSFET CT Micro Proprietary & Confidential Page 6 Rev 1 Nov, 2013 CTL0353PS-R3 P-Channel Enhancement MOSFET Test Circuits & Waveforms Figure 9: Gate Charge Test Circuit Figure 10: Gate Charge Waveform Figure 11: Switching Time Test Circuit Figure 12: Switching Time Waveform CT Micro Proprietary & Confidential Page 7 Rev 1 Nov, 2013 CTL0353PS-R3 P-Channel Enhancement MOSFET Package Dimension (SOT-23) Note: Dimensions in mm Recommended pad layout for surface mount leadform Note: Dimensions in mm CT Micro Proprietary & Confidential Page 8 Rev 1 Nov, 2013 CTL0353PS-R3 P-Channel Enhancement MOSFET Marking Information 0353 0353: Device Number Ordering Information Part Number Description Quantity CTL0353PS-R3 SOT-23 Reel 3000 pcs CT Micro Proprietary & Confidential Page 9 Rev 1 Nov, 2013 CTL0353PS-R3 P-Channel Enhancement MOSFET Reflow Profile Profile Feature Pb-Free Assembly Profile Temperature Min. (Tsmin) 150°C Temperature Max. (Tsmax) 200°C Time (ts) from (Tsmin to Tsmax) 60-120 seconds Ramp-up Rate (tL to tP) 3°C/second max. Liquidous Temperature (TL) 217°C Time (tL) Maintained Above (TL) 60 – 150 seconds Peak Body Package Temperature 260°C +0°C / -5°C Time (tP) within 5°C of 260°C 30 seconds Ramp-down Rate (TP to TL) 6°C/second max Time 25°C to Peak Temperature 8 minutes max. CT Micro Proprietary & Confidential Page 10 Rev 1 Nov, 2013 CTL0353PS-R3 P-Channel Enhancement MOSFET DISCLAIMER CT MICRO RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. CT MICRO DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. ______________________________________________________________________________________ CT MICRO ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT EXPRESS WRITTEN APPROVAL OF CT MICRO INTERNATIONAL CORPORATION. 1. Life support devices or systems are devices or 2. A critical component is any component of a life systems which, (a) are intended for surgical support device or system whose failure to perform implant into the body, or (b) support or sustain life, can be reasonably expected to cause the failure of or (c) whose failure to perform when properly used the life support device or system, or to affect its in accordance with instruction for use provided in safety or effectiveness. the labelling, can be reasonably expected to result in significant injury to the user. CT Micro Proprietary & Confidential Page 11 Rev 1 Nov, 2013