CJ502K SOT-23 Plastic-Encapsulate MOSFETS CJ502K P-CHANNEL MOSFET SOT-23 DESCRIPTION These miniature surface mount MOSFETs reduce power loss conserve energy, making this device ideal for use in small power management circuitry. FEATURE z Energy efficient z Miniature surface mount package saves board space z With protection diode between gate and source z Very fast switching 1. GATE 2. SOURCE 3. DRAIN APPLICATION z DC−DC converters, power management in portable and battery−powered products such as computers, printers, cellular and cordless telephones. z Relay driver z High-speed line driver z High-side load switch z Switching circuits MARKING: 502K MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Parameter Symbol Value Unit Drain-Source Voltage VDS -50 V Gate-Source Voltage VGS ±20 V Continuous Drain Current (note 1) ID -0.18 A Pulsed Drain Current @tp <10 μs IDM -0.7 A 350 mW 420 mW 357 ℃/W 298 ℃/W Power Dissipation (note 2) PD Power Dissipation(note 1) Thermal Resistance from Junction to Ambient (note 2) Thermal Resistance from Junction to Ambient (note 1) RθJA Junction Temperature TJ 150 ℃ Storage Temperature TSTG -55~+150 ℃ TL 260 ℃ Maximum Lead Temperature for Soldering Purposes , Duration for 5 Seconds 1. Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 1 cm 2. Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint. [email protected] www.zpsemi.com 2 1 of 2 CJ502K Electrical characteristics (Ta=25℃ unless otherwise noted) Parameter Symbol Test Condition Min Typ Max Unit STATIC CHARACTERISTICS Drain-source breakdown voltage V (BR)DSS VGS = 0V, ID =-250µA -50 V VDS =-50V,VGS = 0V -15 µA VDS =-25V,VGS = 0V -0.1 µA IGSS VGS =±20V, VDS = 0V ±10 µA Gate threshold voltage (note 1) VGS(th) VDS =VGS, ID =-250µA -2 V Drain-source on-resistance (note1) RDS(on) VGS =-5V, ID =-0.1A 10 Ω VGS =-10V, ID =-0.1A 8 Ω Forward transconductance (note 1) gFS Zero gate voltage drain current IDSS Gate-body leakage current VDS=-25V; ID=-100mA -0.9 50 mS DYNAMIC CHARACTERISTICS (note 2) Input capacitance Ciss 30 pF Output capacitance Coss 10 pF Reverse transfer capacitance Crss 5 pF td(on) 2.5 ns VDD=-15V, 1 ns RL=50Ω, ID =-2.5A 16 ns 8 ns VDS =-5V,VGS =0V,f =1MHz SWITCHING CHARACTERISTICS (note 2) Turn-on delay time Turn-on rise time Turn-off delay time Turn-off fall time tr td(off) tf SOURCE−DRAIN DIODE CHARACTERISTICS Continuous current IS -0.18 A Pulsed current ISM -0.7 A Diode forward voltage (note 1) VDS -2.2 V IS=-0.13A, VGS = 0V Notes : 1. Pulse Test : Pulse Width≤300µs, Duty Cycle≤2%. 2. Guaranteed by design, not subject to producting. [email protected] www.zpsemi.com 2 of 2