UniFETTM FDP19N40 / FDPF19N40 tm N-Channel MOSFET 400V, 19A, 0.24Ω Features Description • RDS(on) =0.2Ω ( Typ.)@ VGS = 10V, ID = 9.5A These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. • Low Gate Charge ( Typ. 32nC) • Low Crss ( Typ. 20pF) This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pluse in the avalanche and commutation mode. These devices are well suited for high efficient switched mode power suppliesand active power factor correction. • Fast Switching • 100% Avalanche Tested • Improved dv/dt Capability • RoHS Compliant D G G DS TO-220 FDP Series TO-220F FDPF Series GD S S MOSFET Maximum Ratings TC = 25oC unless otherwise noted* Symbol VDSS Drain to Source Voltage Parameter VGSS Gate to Source Voltage ID Drain Current FDP19N40 FDPF19N40 400 Units V ±30 V -Continuous (TC = 25oC) 19 19* -Continuous (TC = 100oC) 11.4 11.4* - Pulsed (Note 1) IDM Drain Current EAS Single Pulsed Avalanche Energy IAR Avalanche Current (Note 1) 19 A EAR Repetitive Avalanche Energy (Note 1) 21.5 mJ dv/dt Peak Diode Recovery dv/dt 76* (Note 2) A 542 (Note 3) mJ 15 V/ns (TC = 25oC) 215 40 W - Derate above 25oC 1.65 0.3 W/oC PD Power Dissipation TJ, TSTG Operating and Storage Temperature Range Maximum Lead Temperature for Soldering Purpose, 1/8” from Case for 5 Seconds TL 76 A -55 to +150 o C 300 o C *Drain current limited by maximum junction temperature Thermal Characteristics FDP19N40 FDPF19N40 RθJC Symbol Thermal Resistance, Junction to Case Parameter 0.6 3.0 RθCS Thermal Resistance, Case to Sink Typ. 0.5 - RθJA Thermal Resistance, Junction to Ambient 62.5 62.5 ©2008 Fairchild Semiconductor Corporation FDP19N40 / FDPF19N40 Rev. A 1 Units o C/W www.fairchildsemi.com FDP19N40 / FDPF19N40 N-Channel MOSFET October Device Marking FDP19N40 Device FDP19N40 Package TO-220 Reel Size - Tape Width - Quantity 50 FDPF19N40 FDPF19N40 TO-220F - - 50 Electrical Characteristics Symbol Parameter Test Conditions Min. Typ. Max. Units Off Characteristics BVDSS ΔBVDSS ΔTJ Drain to Source Breakdown Voltage Breakdown Voltage Temperature Coefficient ID = 250μA, VGS = 0V, TJ = 25oC 400 - - V ID = 250μA, Referenced to 25oC - 0.5 - V/oC IDSS Zero Gate Voltage Drain Current VDS = 400V, VGS = 0V - - 1 VDS = 320V, TC = 125oC - - 10 μA IGSS Gate to Body Leakage Current VGS = ±30V, VDS = 0V - - ±100 3.0 - 5.0 V - 0.2 0.24 Ω - 18.3 - S nA On Characteristics VGS(th) RDS(on) Gate Threshold Voltage VGS = VDS, ID = 250μA Static Drain to Source On Resistance VGS = 10V, ID = 9.5A gFS Forward Transconductance VDS = 20V, ID = 9.5A (Note 4) Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Qg(tot) Total Gate Charge at 10V Qgs Gate to Source Gate Charge Qgd Gate to Drain “Miller” Charge VDS = 25V, VGS = 0V f = 1MHz VDS = 320V, ID = 19A VGS = 10V (Note 4, 5) - 1590 2115 pF - 255 340 pF - 20 29 pF - 32 40 nC - 10 - nC - 13 - nC Switching Characteristics td(on) Turn-On Delay Time tr Turn-On Rise Time td(off) Turn-Off Delay Time tf Turn-Off Fall Time VDD = 200V, ID = 19A RG = 25Ω (Note 4, 5) - 31 72 ns - 70 150 ns - 82 174 ns - 49 108 ns Drain-Source Diode Characteristics IS Maximum Continuous Drain to Source Diode Forward Current - - 19 A ISM Maximum Pulsed Drain to Source Diode Forward Current - - 76 A VSD Drain to Source Diode Forward Voltage VGS = 0V, ISD = 19A - - 1.4 V trr Reverse Recovery Time - 349 - ns Qrr Reverse Recovery Charge VGS = 0V, ISD = 19A dIF/dt = 100A/μs - 3.56 - μC (Note 4) Notes: 1: Repetitive Rating: Pulse width limited by maximum junction temperature 2: L = 3mH, IAS = 19A, VDD = 50V, RG = 25Ω, Starting TJ = 25°C 3: ISD ≤ 19A, di/dt ≤ 200A/μs, VDD ≤ BVDSS, Starting TJ = 25°C 4: Pulse Test: Pulse width ≤ 300μs, Duty Cycle ≤ 2% 5: Essentially Independent of Operating Temperature Typical Characteristics FDP19N40 / FDPF19N40 Rev. A 2 www.fairchildsemi.com FDP19N40 / FDPF19N40 N-Channel MOSFET Package Marking and Ordering Information TC = 25oC unless otherwise noted Figure 1. On-Region Characteristics 40 ID,Drain Current[A] ID,Drain Current[A] VGS = 15.0V 10.0V 8.0 V 7.0 V 6.5 V 6.0 V 5.5 V 10 Figure 2. Transfer Characteristics 50 1 o 150 C 10 o -55 C o 25 C *Notes: 1. 250μs Pulse Test *Notes: 1. VDS = 20V 2. 250μs Pulse Test o 2. TC = 25 C 0.1 0.03 1 0.1 1 VDS,Drain-Source Voltage[V] 4 10 Figure 3. On-Resistance Variation vs. Drain Current and Gate Voltage 80 IS, Reverse Drain Current [A] 0.35 0.30 VGS = 10V 0.25 VGS = 20V 0.20 o 150 C o 25 C 10 *Notes: 1. VGS = 0V o 2. 250μs Pulse Test *Note: TJ = 25 C 0.15 0 10 20 30 ID, Drain Current [A] 40 1 0.2 50 Figure 5. Capacitance Characteristics 3500 2000 Ciss 1500 Coss 1000 500 0 0.1 1.2 Figure 6. Gate Charge Characteristics VGS, Gate-Source Voltage [V] *Note: 1. VGS = 0V 2. f = 1MHz 2500 0.6 1.0 VSD, Body Diode Forward Voltage [V] 10 Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd 3000 Capacitances [pF] 8 Figure 4. Body Diode Forward Voltage Variation vs. Source Current and Temperature 0.40 RDS(ON) [Ω], Drain-Source On-Resistance 5 6 7 VGS,Gate-Source Voltage[V] VDS = 100V VDS = 200V VDS = 320V 8 6 4 2 Crss *Note: ID = 19A 0 1 10 VDS, Drain-Source Voltage [V] FDP19N40 / FDPF19N40 Rev. A 0 30 3 5 10 15 20 25 Qg, Total Gate Charge [nC] 30 35 www.fairchildsemi.com FDP19N40 / FDPF19N40 N-Channel MOSFET Typical Performance Characteristics Figure 7. Breakdown Voltage Variation vs. Temperature Figure 8. On-Resistance Variation vs. Temperature 3.0 RDS(on), [Normalized] Drain-Source On-Resistance BVDSS, [Normalized] Drain-Source Breakdown Voltage 1.2 1.1 1.0 0.9 *Notes: 1. VGS = 0V 2. ID = 250μA 0.8 -75 -25 25 75 125 o TJ, Junction Temperature [ C] 2.0 1.5 1.0 *Notes: 1. VGS = 10V 2. ID = 9.5A 0.5 0.0 -75 175 Figure 9. Maximum Safe Operating Area - FDP19N40 200 100 2.5 -25 25 75 125 o TJ, Junction Temperature [ C] 175 Figure 10. Maximum Safe Operating Area 20 10μs 10 16 ID, Drain Current [A] ID, Drain Current [A] 100μs 1ms 10ms DC Operation in This Area is Limited by R DS(on) 1 *Notes: 0.1 o 1. TC = 25 C 12 8 4 o 2. TJ = 150 C 3. Single Pulse 0.01 1 10 100 VDS, Drain-Source Voltage [V] 0 25 800 50 75 100 125 o TC, Case Temperature [ C] 150 Figure 11. Transient Thermal Response Curve - FDP19N40 Thermal Response [ZθJC] 1 0.5 0.1 0.2 t1 0.05 t2 0.02 *Notes: 0.01 0.01 o 1. ZθJC(t) = 0.6 C/W Max. 2. Duty Factor, D= t1/t2 3. TJM - TC = PDM * ZθJC(t) Single pulse 0.003 -5 10 FDP19N40 / FDPF19N40 Rev. A PDM 0.1 -4 10 -3 -2 -1 10 10 10 Rectangular Pulse Duration [sec] 4 0 10 1 10 www.fairchildsemi.com FDP19N40 / FDPF19N40 N-Channel MOSFET Typical Performance Characteristics (Continued) FDP19N40 / FDPF19N40 N-Channel MOSFET Gate Charge Test Circuit & Waveform Resistive Switching Test Circuit & Waveforms Unclamped Inductive Switching Test Circuit & Waveforms FDP19N40 / FDPF19N40 Rev. A 5 www.fairchildsemi.com FDP19N40 / FDPF19N40 N-Channel MOSFET Peak Diode Recovery dv/dt Test Circuit & Waveforms DUT + V DS _ I SD L D r iv e r R V V GS ( D r iv e r ) G S G S am e T ype as DUT V DD • d v / d t c o n t r o lle d b y R G • I S D c o n t r o lle d b y p u ls e p e r io d G a t e P u ls e W id th D = -------------------------G a te P u ls e P e r io d 10V I F M , B o d y D io d e F o r w a r d C u r r e n t I SD ( DUT ) d i/ d t IR M B o d y D io d e R e v e r s e C u r r e n t V DS ( DUT ) B o d y D io d e R e c o v e r y d v / d t V V SD DD B o d y D io d e F o r w a r d V o lt a g e D r o p FDP19N40 / FDPF19N40 Rev. A 6 www.fairchildsemi.com TO-220 4.50 ±0.20 2.80 ±0.10 (3.00) +0.10 1.30 –0.05 18.95MAX. (3.70) ø3.60 ±0.10 15.90 ±0.20 1.30 ±0.10 (8.70) (1.46) 9.20 ±0.20 (1.70) 9.90 ±0.20 1.52 ±0.10 10.08 ±0.30 (1.00) 13.08 ±0.20 ) (45° 1.27 ±0.10 0.80 ±0.10 2.54TYP [2.54 ±0.20] +0.10 0.50 –0.05 2.54TYP [2.54 ±0.20] 2.40 ±0.20 10.00 ±0.20 FDP19N40 / FDPF19N40 Rev. A 7 www.fairchildsemi.com FDP19N40 / FDPF19N40 N-Channel MOSFET Mechanical Dimensions FDP19N40 / FDPF19N40 N-Channel MOSFET Mechanical Dimensions TO-220F 3.30 ±0.10 10.16 ±0.20 2.54 ±0.20 ø3.18 ±0.10 (7.00) (1.00x45°) 15.87 ±0.20 15.80 ±0.20 6.68 ±0.20 (0.70) 0.80 ±0.10 ) 0° (3 9.75 ±0.30 MAX1.47 #1 +0.10 0.50 –0.05 2.54TYP [2.54 ±0.20] 2.76 ±0.20 2.54TYP [2.54 ±0.20] 9.40 ±0.20 4.70 ±0.20 0.35 ±0.10 Dimensions in Millimeters FDP19N40 / FDPF19N40 Rev. A 8 www.fairchildsemi.com FRFET® Global Power ResourceSM Green FPS™ Green FPS™ e-Series™ GTO™ IntelliMAX™ ISOPLANAR™ MegaBuck™ MICROCOUPLER™ MicroFET™ MicroPak™ MillerDrive™ MotionMax™ Motion-SPM™ OPTOLOGIC® OPTOPLANAR® Build it Now™ CorePLUS™ CorePOWER™ CROSSVOLT™ CTL™ Current Transfer Logic™ EcoSPARK® EfficentMax™ EZSWITCH™ * ™ ® tm Fairchild® Fairchild Semiconductor® FACT Quiet Series™ FACT® FAST® FastvCore™ FlashWriter® * FPS™ F-PFS™ Programmable Active Droop™ QFET® QS™ Quiet Series™ RapidConfigure™ ™ Saving our world, 1mW /W /kW at a time™ SmartMax™ SMART START™ SPM® STEALTH™ SuperFET™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 SupreMOS™ SyncFET™ ® ® tm PDP SPM™ Power-SPM™ PowerTrench® PowerXS™ tm TinyBoost™ TinyBuck™ TinyLogic® TINYOPTO™ TinyPower™ TinyPWM™ TinyWire™ μSerDes™ UHC® Ultra FRFET™ UniFET™ VCX™ VisualMax™ XS™ The Power Franchise® * EZSWITCH™ and FlashWriter® are trademarks of System General Corporation, used under license by Fairchild Semiconductor. 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Obsolete Not In Production Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only. Rev. I37 FDP19N40 / FDPF19N40 Rev. A 9 www.fairchildsemi.com FDP19N40 / FDPF19N40 N-Channel MOSFET TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks.