DMNH4006SK3 Green 40V 175°C N-CHANNEL ENHANCEMENT MODE MOSFET ADVANCED INFORMATION Product Summary Features V(BR)DSS RDS(ON) Max ID Max TC = +25°C Low On-Resistance Low Input Capacitance 40V 6mΩ @ VGS = 10V 140A Lead-Free Finish; RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability An Automotive-Compliant Part is Available Under Separate Datasheet (DMNH4006SK3Q) Description This new generation MOSFET is designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high-efficiency power management applications. Applications Mechanical Data Case: TO252 (DPAK) Case Material: Molded Plastic, “Green” Molding Compound. Engine Management Systems UL Flammability Classification Rating 94V-0 Body Control Electronics Moisture Sensitivity: Level 1 per J-STD-020 DC-DC Converters Terminal Finish - Matte Tin Annealed over Copper Leadframe. Solderable per MIL-STD-202, Method 208 Weight: 0.315 grams (Approximate) Top View Pin Out Top View Equivalent Circuit Ordering Information (Note 4) Part Number DMNH4006SK3-13 Notes: Case TO252 (DPAK) Packaging 2,500/Tape & Reel 1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. All applicable RoHS exemptions applied. 2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 4. For packaging details, go to our website at http://www.diodes.com/products/packages.html. Marking Information H4006S YYWW DMNH4006SK3 Document number: DS37380 Rev. 2 - 2 =Manufacturer’s Marking H4006S = Product Type Marking Code YYWW = Date Code Marking YY = Last Digit of Year (ex: 16 = 2016) WW = Week Code (01 to 53) 1 of 7 www.diodes.com May 2016 © Diodes Incorporated DMNH4006SK3 Maximum Ratings (@TA = +25°C, unless otherwise specified.) Characteristic Symbol VDSS VGSS Drain-Source Voltage Gate-Source Voltage TA = +25°C TA = +70°C TC = +25°C TC = +100°C ADVANCED INFORMATION Continuous Drain Current (Note 6) VGS = 10V Continuous Drain Current (Note 7) VGS = 10V Value 40 ±20 20 16 ID A 140 100 200 120 64 208 ID Pulsed Drain Current (380µs Pulse, Duty Cycle = 1%) Maximum Continuous Body Diode Forward Current (Note 7) Avalanche Current, L = 0.1mH (Note 8) Avalanche Energy, L = 0.1mH (Note 8) Unit V V IDM IS IAS EAS A A A A mJ Thermal Characteristics (@TA = +25°C, unless otherwise specified.) Characteristic Symbol PD Total Power Dissipation (Note 5) Steady state t<10s Thermal Resistance, Junction to Ambient (Note 5) Value 2.2 68 29 3.6 42 21 0.8 -55 to +175 RJA Total Power Dissipation (Note 6) PD Steady state t<10s Thermal Resistance, Junction to Ambient (Note 6) Thermal Resistance, Junction to Case (Note 7) Operating and Storage Temperature Range RJA RJC TJ, TSTG Unit W °C/W W °C/W °C Electrical Characteristics (@TA = +25°C, unless otherwise specified.) Characteristic OFF CHARACTERISTICS (Note 9) Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current, TJ = +25°C Gate-Source Leakage ON CHARACTERISTICS (Note 9) Gate Threshold Voltage Static Drain-Source On-Resistance Diode Forward Voltage DYNAMIC CHARACTERISTICS (Note 10) Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance Total Gate Charge (VGS = 6V) Total Gate Charge (VGS = 10V) Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge Notes: Symbol Min Typ Max Unit BVDSS IDSS IGSS 40 — — — — — — 1 ±100 V µA nA VGS = 0V, ID = 250μA VDS = 40V, VGS = 0V VGS = ±20V, VDS = 0V VGS(TH) RDS(ON) VSD 2 — — — — 0.7 4 6 1.2 V mΩ V VDS = VGS, ID = 250μA VGS = 10V, ID = 86A VGS = 0V, IS = 1.0A Ciss Coss Crss Rg Qg Qg Qgs Qgd — — — — — — — — — — — — — 2,280 556 282 1.7 32 51 9.6 20.4 7.7 9.3 18 8.1 32 — — — — — — — — — — — — — pF pF pF Ω nC nC nC nC ns ns ns ns ns — 28 — nC tD(ON) tR tD(OFF) tF tRR QRR Test Condition VDS = 25V, VGS = 0V, f = 1MHz VDS = 0V, VGS = 0V, f = 1MHz VDS = 32V, ID = 86A VGS = 10V, VDS = 20V, RG = 3.5Ω, ID = 86A IF = 50A, di/dt = 100A/μs IF = 50A, di/dt = 100A/μs 5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout. 6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate. 7. Thermal resistance from junction to soldering point (on the exposed drain pad). 8. IAS and EAS ratings are based on low frequency and duty cycles to keep TJ = +25°C. 9. Short duration pulse test used to minimize self-heating effect. 10. Guaranteed by design. Not subject to product testing. DMNH4006SK3 Document number: DS37380 Rev. 2 - 2 2 of 7 www.diodes.com May 2016 © Diodes Incorporated DMNH4006SK3 30 100.0 VGS=6.0V 90.0 VGS=8.0V 70.0 VGS=5.0V ID, DRAIN CURRENT (A) ID, DRAIN CURRENT (A) 80.0 VGS=10.0V 60.0 50.0 40.0 30.0 VGS=4.0V 20.0 10.0 20 15 10 125℃ 25℃ 175℃ VGS=3.5V -55℃ 0 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 1 2 VDS, DRAIN-SOURCE VOLTAGE (V) 3 4 5 6 VGS, GATE-SOURCE VOLTAGE (V) Figure 2. Typical Transfer Characteristic Figure 1. Typical Output Characteristic 0.06 0.006 RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω) RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω) 85℃ 150℃ 5 0.0 0.005 VGS=10V 0.004 0.003 0.002 0 5 10 15 20 25 30 35 40 45 0.05 0.04 0.03 ID=86A 0.02 0.01 0 0 50 VGS= 10V 150℃ 125℃ RDS(ON), DRAIN-SOURCE ON-RESISTANCE (NORMALIZED) 0.01 175℃ 0.008 85℃ 0.006 25℃ 0.004 -55℃ 0.002 0 10 20 30 40 50 60 70 80 90 100 ID, DRAIN CURRENT (A) Figure 5. Typical On-Resistance vs. Drain Current and Junction Temperature DMNH4006SK3 Document number: DS37380 Rev. 2 - 2 4 8 12 16 20 VGS, GATE-SOURCE VOLTAGE (V) Figure 4. Typical Transfer Characteristic ID, DRAIN-SOURCE CURRENT (A) Figure 3. Typical On-Resistance vs. Drain Current and Gate Voltage RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω) ADVANCED INFORMATION VDS=5V 25 3 of 7 www.diodes.com 2 1.8 1.6 VGS=10V, ID=86A 1.4 1.2 1 0.8 0.6 -50 -25 0 25 50 75 100 125 150 175 TJ, JUNCTION TEMPERATURE (℃) Figure 6. On-Resistance Variation with Junction Temperature May 2016 © Diodes Incorporated 4 VGS(TH), GATE THRESHOLD VOLTAGE (V) RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω) 0.009 VGS=10V, ID=86A 0.006 0.003 3.5 3 ID=1mA 2.5 2 ID=250μA 1.5 1 0.5 0 0 -50 -25 0 25 50 75 100 125 150 175 -50 -25 0 25 50 75 100 125 150 175 TJ, JUNCTION TEMPERATURE (℃) Figure 8. Gate Threshold Variation vs. Junction Temperature TJ, JUNCTION TEMPERATURE (℃) Figure 7. On-Resistance Variation with Junction Temperature 30 100000 10000 25 20 VGS=0V, TJ=150℃ 15 VGS=0V, TJ=125℃ VGS=0V, TJ=175℃ 10 VGS=0V, TJ=85℃ VGS=0V, TJ=25℃ 5 IDSS, LEAKAGE CURRENT (nA) IS, SOURCE CURRENT (A) 150℃ 125℃ 175℃ 1000 85℃ 100 25℃ 10 1 0.1 VGS=0V, TJ=-55℃ 0 0.01 0 0.3 0.6 0.9 1.2 1.5 0 5 10 15 20 25 30 35 40 VDS, DRAIN-SOURCE VOLTAGE (V) Figure 10. Typical Drain-Source Leakage Current vs. Voltage VSD, SOURCE-DRAIN VOLTAGE (V) Figure 9. Diode Forward Voltage vs. Current 10000 10 f=1MHz 9 8 Ciss 1000 7 VGS (V) CT, JUNCTION CAPACITANCE (pF) ADVANCED INFORMATION DMNH4006SK3 Coss VDS=32V, ID=86A 6 5 4 Crss 3 2 1 100 0 0 5 10 15 20 25 30 35 40 0 10 20 30 40 VDS, DRAIN-SOURCE VOLTAGE(V) Qg (nC) Figure 11. Typical Junction Capacitance Figure 12. Gate Charge DMNH4006SK3 Document number: DS37380 Rev. 2 - 2 4 of 7 www.diodes.com 50 May 2016 © Diodes Incorporated DMNH4006SK3 1000 RDS(ON) Limited PW =1μs PW =10μs ID, DRAIN CURRENT (A) PW =1ms 10 PW =10ms PW =100ms TJ(MAX)=175℃ TC=25℃ Single Pulse DUT on infinite heatsink VGS=10V 1 0.1 0.1 PW =1s 1 10 100 VDS, DRAIN-SOURCE VOLTAGE (V) Figure 13. SOA, Safe Operation Area 1 D=0.5 r(t), TRANSIENT THERMAL RESISTANCE ADVANCED INFORMATION PW =100μs 100 D=0.3 D=0.9 D=0.7 0.1 D=0.1 D=0.05 D=0.02 0.01 D=0.01 D=0.005 RθJC(t)=r(t) * RθJC RθJC=0.8℃/W Duty Cycle, D=t1 / t2 D=Single Pulse 0.001 1E-06 1E-05 0.0001 0.001 0.01 0.1 1 10 t1, PULSE DURATION TIME (sec) Figure 14. Transient Thermal Resistance DMNH4006SK3 Document number: DS37380 Rev. 2 - 2 5 of 7 www.diodes.com May 2016 © Diodes Incorporated DMNH4006SK3 Package Outline Dimensions Please see http://www.diodes.com/package-outlines.html for the latest version. ADVANCED INFORMATION E A b3 7°±1° c L3 D A2 L4 e H b(3x) b2(2x) Gauge Plane 0.508 D1 E1 Seating Plane a L A1 2.74REF TO252 (DPAK) Dim Min Max Typ A 2.19 2.39 2.29 A1 0.00 0.13 0.08 A2 0.97 1.17 1.07 b 0.64 0.88 0.783 b2 0.76 1.14 0.95 b3 5.21 5.46 5.33 c 0.45 0.58 0.531 D 6.00 6.20 6.10 D1 5.21 e 2.286 E 6.45 6.70 6.58 E1 4.32 H 9.40 10.41 9.91 L 1.40 1.78 1.59 L3 0.88 1.27 1.08 L4 0.64 1.02 0.83 a 0° 10° All Dimensions in mm Suggested Pad Layout Please see http://www.diodes.com/package-outlines.html for the latest version. X1 Y1 Dimensions C X X1 Y Y1 Y2 Y2 C Value (in mm) 4.572 1.060 5.632 2.600 5.700 10.700 Y X DMNH4006SK3 Document number: DS37380 Rev. 2 - 2 6 of 7 www.diodes.com May 2016 © Diodes Incorporated DMNH4006SK3 IMPORTANT NOTICE ADVANCED INFORMATION DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or trademark rights, nor the rights of others. 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Copyright © 2016, Diodes Incorporated www.diodes.com DMNH4006SK3 Document number: DS37380 Rev. 2 - 2 7 of 7 www.diodes.com May 2016 © Diodes Incorporated