PROCESS CPD106R Schottky Diode Schottky Diode Chip PROCESS DETAILS Die Size 8.3 x 8.3 MILS Die Thickness 3.9 MILS Anode Bonding Pad Area 5.4 x 5.4 MILS Top Side Metalization Al - 30,000Å Back Side Metalization Au - 12,000Å GEOMETRY GROSS DIE PER 5 INCH WAFER 251,364 PRINCIPAL DEVICE TYPE CTLSH01-30 R0 (20-April 2011) w w w. c e n t r a l s e m i . c o m PROCESS CPD106R Typical Electrical Characteristics R0 (20-April 2011) w w w. c e n t r a l s e m i . c o m