DMT6010LSS 60V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary NEW PRODUCT INFORMATION ADVANCEINFORMATION ADVANCED BVDSS Features and Benefits RDS(ON) max ID max TA = 25°C 8mΩ @ VGS = 10V 14.0A 12mΩ @ VGS = 4.5V 11.5A 60V 100% Unclamped Inductive Switch (UIS) Test in Production High Conversion Efficiency Low RDS(ON) – Minimizes On-State Losses Low Input Capacitance Fast Switching Speed Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability Description and Applications Mechanical Data This new generation N-Channel Enhancement Mode MOSFET is designed to minimize RDS(ON), yet maintain superior switching Case: SO-8 Case Material: Molded Plastic, "Green" Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminal Finish - Matte Tin Annealed over Copper Leadframe. Solderable per MIL-STD-202, Method 208 Weight: 0.074 grams (Approximate) performance. This device is ideal for use in notebook battery power management and loadswitch. Backlighting Power Management Functions DC-DC Converters SO-8 S D S D S D G D D G S Top View Internal Schematic Top View Equivalent Circuit Ordering Information (Note 4) Part Number DMT6010LSS-13 Notes: Case SO-8 Packaging 2,500/Tape & Reel 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 4. For packaging details, go to our website at http://www.diodes.com/products/packages.html. Marking Information 8 5 = Manufacturer’s Marking T6010LS = Product Type Marking Code YYWW = Date Code Marking YY or YY = Year (ex: 13 = 2013) WW = Week (01 to 53) T6010LS YY WW 1 DMT6010LSS Document number: DS37362 Rev. 1 - 2 4 1 of 7 www.diodes.com November 2015 © Diodes Incorporated DMT6010LSS Maximum Ratings (@TA = +25°C, unless otherwise specified.) Characteristic Symbol VDSS VGSS Drain-Source Voltage Gate-Source Voltage Steady State NEW PRODUCT INFORMATION ADVANCEINFORMATION ADVANCED Continuous Drain Current (Note 6) VGS = 10V t<10s TA = +25°C TA = +70°C TA = +25°C TA = +70°C Value 60 ±20 14.0 11.0 ID A 16.7 13.5 3 80 20 20 A A A mJ Value 1.5 80 48 2.0 53 37 6.5 -55 to +150 Units W °C/W °C/W W °C/W °C/W °C/W °C ID Maximum Continuous Body Diode Forward Current (Note 6) Pulsed Drain Current (10µs Pulse, Duty Cycle = 1%) Avalanche Current, L = 0.1mH Avalanche Energy, L = 0.1mH Units V V IS IDM IAS EAS A Thermal Characteristics Characteristic Symbol PD Total Power Dissipation (Note 5) Thermal Resistance, Junction to Ambient (Note 5) Steady State t<10s RθJA Total Power Dissipation (Note 6) Thermal Resistance, Junction to Ambient (Note 6) PD Steady State t<10s Thermal Resistance, Junction to Case (Note 6) Operating and Storage Temperature Range RθJA RθJC TJ, TSTG Electrical Characteristics (@TA = +25°C, unless otherwise specified.) Characteristic OFF CHARACTERISTICS (Note 7) Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Source Leakage ON CHARACTERISTICS (Note 7) Gate Threshold Voltage Symbol Min Typ Max Unit BVDSS IDSS IGSS 60 — — — — — — 1 ±100 V μA nA VGS = 0V, ID = 250μA VDS = 48V, VGS = 0V VGS = ±20V, VDS = 0V VGS(TH) RDS(ON) — 6 8 0.9 2.0 8 12 1.2 V Static Drain-Source On-Resistance 0.8 — — — VDS = VGS, ID = 250μA VGS = 10V, ID = 20A VGS = 4.5V, ID = 20A VGS = 0V, IS = 20A — — — — — — — — — — — — 2,090 746 38.5 0.59 19.3 41.3 6.0 8.8 5.7 4.3 23.4 9.7 — — — — — — — — — — — — Diode Forward Voltage DYNAMIC CHARACTERISTICS (Note 8) Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate resistance Total Gate Charge (VGS = 4.5V) Total Gate Charge (VGS = 10V) Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Notes: VSD Ciss Coss Crss RG Qg Qg Qgs Qgd tD(ON) tR tD(OFF) tF mΩ V Test Condition pF VDS = 30V, VGS = 0V, f = 1MHz Ω VDS = 0V, VGS = 0V, f = 1MHz nC VDS = 30V, ID = 20A ns VDD = 30V, VGS = 10V, ID = 20A, RG = 3Ω 5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout. 6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate. 7. Short duration pulse test used to minimize self-heating effect. 8. Guaranteed by design. Not subject to product testing. DMT6010LSS Document number: DS37362 Rev. 1 - 2 2 of 7 www.diodes.com November 2015 © Diodes Incorporated DMT6010LSS 30.0 30 VDS = 5.0V VGS = 10V VGS = 4.5V 25 ID, DRAIN CURRENT (A) ID, DRAIN CURRENT (A) VGS = 3.0V VGS = 4.0V VGS = 3.5V 20.0 15.0 10.0 20 15 TA = 150°C TA = 125°C 10 T A = 85°C TA = 25°C 5 5.0 VGS = 2.5V 0 0 1 2 3 4 VDS, DRAIN-SOURCE VOLTAGE (V) Figure 1 Typical Output Characteristic 5 0 0.02 0.01 0.009 VGS = 4.5V 0.008 0.007 VGS = 10V 0.006 0.005 0.004 0 2 4 6 8 10 12 14 16 18 ID, DRAIN-SOURCE CURRENT (A) Figure 3 Typical On-Resistance vs. Drain Current and Gate Voltage 20 1.6 VGS = 10V ID = 10A 1.2 VGS = 5V ID = 5A 0.8 0.4 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (C) Figure 5 On-Resistance Variation with Temperature DMT6010LSS Document number: DS37362 Rev. 1 - 2 3 of 7 www.diodes.com 0.5 1 1.5 2 2.5 3 3.5 4 4.5 VGS, GATE-SOURCE VOLTAGE (V) Figure 2 Typical Transfer Characteristics 5 VGS = 4.5V 0.018 0.016 0.014 TA = 150°C 0.012 T A = 125°C 0.01 TA = 85°C 0.008 TA = 25°C 0.006 TA = -55°C 0.004 0.002 0 0 RDS(ON), DRAIN-SOURCE ON-RESISTANCE () 2 RDS(ON), DRAIN-SOURCE ON-RESISTANCE ( ) RDS(ON), DRAIN-SOURCE ON-RESISTANCE () TA = -55°C VGS = 2.2V 0.0 RDS(ON), DRAIN-SOURCE ON-RESISTANCE (NORMALIZED) NEW PRODUCT INFORMATION ADVANCEINFORMATION ADVANCED 25.0 5 10 15 20 25 ID, DRAIN CURRENT (A) Figure 4 Typical On-Resistance vs. Drain Current and Temperature 30 0.02 0.018 0.016 0.014 VGS = 5V ID = 5A 0.012 0.01 0.008 VGS = 10V ID = 10A 0.006 0.004 0.002 0 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (C) Figure 6 On-Resistance Variation with Temperature November 2015 © Diodes Incorporated DMT6010LSS 1.8 25 IS, SOURCE CURRENT (A) VGS(th), GATE THRESHOLD VOLTAGE (V) 30 1.6 1.4 ID = 1mA 1.2 ID = 250µA 1 0.8 20 TA = 150°C 15 TA = 125°C TA = 85°C 10 TA = 25°C TA = -55°C 5 0.6 0 0.4 -50 0 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (C) Figure 7 Gate Threshold Variation vs. Ambient Temperature 10000 0.3 0.6 0.9 1.2 1.5 VSD, SOURCE-DRAIN VOLTAGE (V) Figure 8 Diode Forward Voltage vs. Current 10 8 Ciss 1000 Coss VGS (V) CT, JUNCTION CAPACITANCE (pF) f=1MHz 6 4 VDS = 30V, ID = 20A 100 Crss 2 0 10 0 5 10 15 20 25 30 35 40 0 10 20 30 40 50 Qg (nC) Figure 10 Gate Charge VDS, DRAIN-SOURCE VOLTAGE (V) Figure 9 Typical Junction Capacitance 100 RDS(ON) Limited ID, DRAIN CURRENT (A) NEW PRODUCT INFORMATION ADVANCEINFORMATION ADVANCED 2 PW =100µs 10 1 PW =1ms PW =10ms PW =100ms PW =1s 0.1 0.01 TJ(Max) = 150℃ TA= 25℃ Single Pulse DUT on 1*MRP Board VGS= 10V 0.1 1 PW =10s DC 10 100 VDS, DRAIN-SOURCE VOLTAGE (V) Figure 11 SOA, Safe Operation Area DMT6010LSS Document number: DS37362 Rev. 1 - 2 4 of 7 www.diodes.com November 2015 © Diodes Incorporated DMT6010LSS r(t), TRANSIENT THERMAL RESISTANCE NEW PRODUCT INFORMATION ADVANCEINFORMATION ADVANCED 1 D=0.5 D=0.3 D=0.9 D=0.7 0.1 D=0.1 D=0.05 D=0.02 0.01 D=0.01 D=0.005 RθJA(t) = r(t) * RθJA RθJA = 90℃/W Duty Cycle, D = t1 / t2 D=Single Pulse 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 t1, PULSE DURATION TIME (sec) Figure 12 Transient Thermal Resistance DMT6010LSS Document number: DS37362 Rev. 1 - 2 5 of 7 www.diodes.com November 2015 © Diodes Incorporated DMT6010LSS Package Outline Dimensions Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for the latest version 0.254 NEW PRODUCT INFORMATION ADVANCEINFORMATION ADVANCED SO-8 E1 E Gauge Plane Seating Plane A1 L Detail ‘A’ 7°~9° h 45° Detail ‘A’ A2 A A3 b e SO-8 Dim Min Max A — 1.75 A1 0.10 0.20 A2 1.30 1.50 A3 0.15 0.25 b 0.3 0.5 D 4.85 4.95 E 5.90 6.10 E1 3.85 3.95 e 1.27 Typ h — 0.35 L 0.62 0.82 0° 8° All Dimensions in mm D Suggested Pad Layout Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version. SO-8 X Dimensions X Y C1 C2 C1 Value (in mm) 0.60 1.55 5.4 1.27 C2 Y DMT6010LSS Document number: DS37362 Rev. 1 - 2 6 of 7 www.diodes.com November 2015 © Diodes Incorporated DMT6010LSS IMPORTANT NOTICE NEW PRODUCT INFORMATION ADVANCEINFORMATION ADVANCED DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or trademark rights, nor the rights of others. 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Copyright © 2015, Diodes Incorporated www.diodes.com DMT6010LSS Document number: DS37362 Rev. 1 - 2 7 of 7 www.diodes.com November 2015 © Diodes Incorporated