CHA4105-99F RoHS COMPLIANT 2-4GHz Driver GaAs Monolithic Microwave IC Description The CHA4105-99F is a monolithic two-stage driver amplifier delivering 24dBm output power @ 1dB gain compression in the 2-4GHz frequency range. It is designed for a wide range of applications, from military to commercial communication systems. The circuit is manufactured with a pHEMT process, 0.25µm gate length, via holes through the substrate, air bridges and electron beam gate lithography. It is available in chip form. V+ OUT IN V- Main Features ■ Broadband performances: 2-4GHz ■ 24dBm @ 1dB gain compression ■ 23dB Gain ■ DC bias: V+ = 5V ; V- = -5V ■ DC power consumption: 180mA ■ Chip size: 2.07 x 1.6 x 0.1 mm -40°C +25°C +85°C Main Characteristics Tamb.= +25°C Symbol Parameter Min Typ Max Unit Freq Frequency range 2 4 GHz Gain Linear Gain 23 dB P_1dB Output Power @1dB comp. 24 dBm ESD Protections: Electrostatic discharge sensitive device. Observe handling precautions! Ref. : DSCH41051035 - 07 Feb11 1/12 Specifications subject to change without notice United Monolithic Semiconductors S.A.S. Route Départementale 128 - BP46 - 91401 Orsay Cedex France Tel.: +33 (0) 1 69 33 03 08 - Fax: +33 (0) 1 69 33 03 09 CHA4105-99F 2-4GHz Driver Main Characteristics Tamb.= +25°C Symbol Parameter Min Typ Max Unit Freq Frequency range 2 4 GHz Gain Linear Gain 23 dB RL_in Input Return Loss 15 dB RL_out Output Return Loss 18 dB P_1dB Output power @ 1dB gain compression 24 dBm PAE_1dB Power Added Efficiency @ 1dBcomp. 28 % V+ Positive supply voltage 5 V VNegative supply voltage -5 V (1) I+ Positive supply quiescent current 180 mA INegative supply quiescent current 5 mA I+_1dB Positive current @ 1dB gain compression 220 mA These values are representative of onboard measurements as defined on the drawing in paragraph "Evaluation mother board". (1) Parameter can be adjusted by tuning of V-. Absolute Maximum Ratings (1) Tamb.= +25°C Symbol Parameter Values Unit V+ Positive supply voltage 6.5V V I+ Positive supply quiescent current 240 mA VNegative supply voltage -3.75 V Tj Junction temperature (2) 175 °C Cmp Compression level 6 dB I+_sat Supply current in saturation 320 mA Ta Operating temperature range -40 to +85 °C Tstg Storage temperature range -55 to +155 °C (1) Operation of this device above anyone of these parameters may cause permanent damage. (2) Thermal Resistance channel to ground paddle = 101°C/W for T= +85°C. Ref. : DSCH41051035 - 07 Feb11 2/12 Route Départementale 128, BP46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0) 1 69 33 03 08 - Fax: +33 (0) 1 69 33 03 09 Specifications subject to change without notice CHA4105-99F 2-4GHz Driver Typical on-wafer Sij parameters Tamb.= +25°C, V+ = +8V, I+ = 180mA Freq (GHz) S11 (dB) PhS11 (°) S12 (dB) PhS12 (°) S21 (dB) PhS21 (°) S22 (dB) PhS22 (°) 0.10 0.50 1.00 1.50 2.00 2.50 3.00 3.50 4.00 4.50 5.00 5.50 6.00 6.50 7.00 7.50 8.00 8.50 9.00 9.50 10.00 -0.36 -1.29 -1.94 -8.45 -19.45 -16.35 -27.33 -18.68 -19.87 -9.94 -4.07 -2.17 -1.47 -1.27 -1.01 -0.65 -0.48 -0.41 -0.34 -0.28 -0.23 -6.99 -27.40 -61.11 -129.10 -9.13 -40.67 -65.04 37.43 -55.35 160.10 106.30 74.95 54.99 41.32 32.22 23.53 15.71 9.02 3.12 -2.20 -7.02 -69.84 -39.33 -39.27 -40.31 -42.17 -42.04 -41.93 -42.83 -44.60 -46.99 -50.19 -54.83 -57.93 -56.29 -59.51 -73.34 -65.74 -70.70 -75.00 -67.47 -57.14 178.30 -1.72 -124.00 125.30 33.05 -40.67 -107.90 -173.80 126.30 66.06 1.40 -50.90 -75.28 -107.10 -174.20 139.70 -158.40 76.88 -91.93 23.62 -31.86 -33.96 -11.29 -1.79 17.67 22.70 23.65 23.97 23.21 21.53 18.51 13.84 9.24 5.80 3.30 -1.03 -8.82 -16.52 -23.22 -28.39 -33.03 -36.77 -95.60 117.70 146.90 68.32 -40.78 -119.90 167.90 98.09 30.41 -37.00 -95.76 -141.90 176.20 127.00 63.07 11.05 -22.61 -47.81 -70.68 -93.57 -111.10 -0.58 -1.96 -6.02 -14.87 -39.04 -20.64 -19.19 -24.13 -14.51 -9.41 -6.39 -4.74 -3.73 -3.02 -2.30 -1.71 -1.30 -0.98 -0.76 -0.57 -0.45 -15.89 -72.56 -141.70 154.80 -50.42 -64.11 -97.03 -50.70 -33.10 -46.44 -63.91 -79.58 -92.33 -102.30 -110.50 -119.30 -127.50 -134.70 -141.20 -147.30 -153.30 Ref. : DSCH41051035 - 07 Feb11 3/12 Route Départementale 128, BP46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0) 1 69 33 03 08 - Fax: +33 (0) 1 69 33 03 09 Specifications subject to change without notice CHA4105-99F 2-4GHz Driver Typical Test fixture Measurements V+ = +5V, V- = -5V, I+ = 180mA, I- = 2mA Linear Gain -40°C +25°C +85°C Input & Output return loss (dB) In/out Return Loss Input Output Ref. : DSCH41051035 - 07 Feb11 4/12 Route Départementale 128, BP46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0) 1 69 33 03 08 - Fax: +33 (0) 1 69 33 03 09 Specifications subject to change without notice CHA4105-99F 2-4GHz Driver Typical Test fixture Measurements V+ = +5V, V- = -5V, I+ = 180mA, I- = 2mA Output power @ 1dB gain compression (dBm) Output power @ 1dB gain compression versus Frequency & Temperature -40°C +25°C +85°C I+ @ 1dB gain compression (A) Positive supply current @ 1dB gain compression versus Frequency & Temperature +85°C +25°C -40°C Ref. : DSCH41051035 - 07 Feb11 5/12 Route Départementale 128, BP46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0) 1 69 33 03 08 - Fax: +33 (0) 1 69 33 03 09 Specifications subject to change without notice CHA4105-99F 2-4GHz Driver Typical Test fixture Measurements V+ = +5V, V- = -5V, I+ = 180mA, I- = 2mA Output power @ saturation (dBm) Output power @ saturation versus Frequency & Temperature -40°C +25°C +85°C I+ @ saturation (dBm) Positive supply current @ saturation versus Frequency & Temperature Ref. : DSCH41051035 - 07 Feb11 -40°C +85°C 6/12 Route Départementale 128, BP46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0) 1 69 33 03 08 - Fax: +33 (0) 1 69 33 03 09 +25°C Specifications subject to change without notice CHA4105-99F 2-4GHz Driver Typical Test fixture Measurements V+ = +5V, V- = -5V, I+ = 180mA, I- = 2mA PAE @ 1dB gain compression (%) Power Added Efficiency (PAE) @ 1dB gain compression versus Frequency & Temperature Ref. : DSCH41051035 - 07 Feb11 -40°C +25°C +85°C 7/12 Route Départementale 128, BP46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0) 1 69 33 03 08 - Fax: +33 (0) 1 69 33 03 09 Specifications subject to change without notice CHA4105-99F 2-4GHz Driver 1 265 365 965 Mechanical data 1 965 3 4 115 2 070 2 5 780 620 390 1 230 8 7 105 000 385 000 1 480 6 1 600 Cotation : µm Tolerance : ±35µm All dimensions are in micrometers Chip size = 2070x1600 ±35µm Chip thickness = 100µm ±10µm RF pads (1, 5) = 122 x 144µm² DC pads (2, 3, 4) = 100 x 100µm² Pin number 1 2 3 4, 6, 7, 8 5 Ref. : DSCH41051035 - 07 Feb11 Pin name IN -V +V GND OUT Description Input RF Gate supply voltage Drain supply voltage Ground (no bonding required) Output RF 8/12 Route Départementale 128, BP46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0) 1 69 33 03 08 - Fax: +33 (0) 1 69 33 03 09 Specifications subject to change without notice CHA4105-99F 2-4GHz Driver Test fixture 61498835 Recommended assembly plan V+ 10nF 120pF CHA4105 OUT IN 120pF 10nF V- Ref. : DSCH41051035 - 07 Feb11 9/12 Route Départementale 128, BP46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0) 1 69 33 03 08 - Fax: +33 (0) 1 69 33 03 09 Specifications subject to change without notice CHA4105-99F 2-4GHz Driver Bonding recommendations The RF, DC and modulation port inter-connections should be done according to the following table: Port Connection Inductance (Lbonding) = 0.3nH IN (pad 1) 400µm length with wire diameter of 25 µm x2 Inductance (Lbonding) = 0.3nH OUT (pad 5) 400µm length with wire diameter of 25 µm x2 Inductance (Lbonding) =0.8nH DC pads to 1st decoupling level for single bonding one wire: diameter 25µm, length 1mm Inductance (Lbonding) =0.8nH 1st decoupling level to 2nd decoupling level for single bonding one wire: diameter 25µm, length 1mm DC Schematic Driver : 5V, 180mA V+ 30 1100 6000 0.6 mA RF_in 28 mA 2.7 mA 150 mA RF_out 1015 6310 4000 9000 V- Ref. : DSCH41051035 - 07 Feb11 10/12 Route Départementale 128, BP46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0) 1 69 33 03 08 - Fax: +33 (0) 1 69 33 03 09 Specifications subject to change without notice CHA4105-99F 2-4GHz Driver Notes Ref. : DSCH41051035 - 07 Feb11 11/12 Route Départementale 128, BP46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0) 1 69 33 03 08 - Fax: +33 (0) 1 69 33 03 09 Specifications subject to change without notice CHA4105-99F 2-4GHz Driver Recommended ESD management Refer to the application note AN0020 available at http://www.ums-gaas.com for ESD sensitivity and handling recommendations for the UMS products. Ordering Information Chip form: CHA4105-99F/00 Information furnished is believed to be accurate and reliable. However United Monolithic Semiconductors S.A.S. assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of United Monolithic Semiconductors S.A.S.. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. United Monolithic Semiconductors S.A.S. products are not authorised for use as critical components in life support devices or systems without express written approval from United Monolithic Semiconductors S.A.S. Ref. : DSCH41051035 - 07 Feb11 12/12 Route Départementale 128, BP46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0) 1 69 33 03 08 - Fax: +33 (0) 1 69 33 03 09 Specifications subject to change without notice