BLF2324M8LS200P
Power LDMOS transistor
Rev. 1 — 3 June 2014
Product data sheet
1. Product profile
1.1 General description
200 W LDMOS power transistor for industrial applications at frequencies from 2300 MHz
to 2400 MHz.
Table 1.
Typical performance
Typical RF performance at Tcase = 25 C in a common source class-AB production test circuit.
Test signal
f
(MHz)
(mA)
(V)
(W)
1-carrier W-CDMA
2300 to 2400
1740
28
60
[1]
IDq
VDS
PL(AV)
D
ACPR5M
(dB)
(%)
(dBc)
17.2
32
37 [1]
Gp
Test signal: 3GPP test model 1; 64 DPCH; PAR = 7.2 dB at 0.01 % probability on CCDF.
1.2 Features and benefits
Excellent ruggedness
High efficiency
Low thermal resistance providing excellent thermal stability
Designed for broadband operation (2300 MHz to 2400 MHz)
Lower output capacitance for improved performance in Doherty applications
Designed for low memory effects providing excellent pre-distortability
Internally matched for ease of use
Integrated ESD protection
Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances
(RoHS)
1.3 Applications
RF power amplifiers for industrial and multi carrier applications in the 2300 MHz to
2400 MHz frequency range
BLF2324M8LS200P
NXP Semiconductors
Power LDMOS transistor
2. Pinning information
Table 2.
Pinning
Pin
Description
1
drain1
2
drain2
3
gate1
4
gate2
5
Simplified outline
Graphic symbol
[1]
source
V\P
[1]
Connected to flange.
3. Ordering information
Table 3.
Ordering information
Type number
Package
BLF2324M8LS200P
Name Description
Version
-
SOT539B
earless flanged balanced ceramic package; 4 leads
4. Limiting values
Table 4.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
VDS
Min
Max
Unit
drain-source voltage
-
65
V
VGS
gate-source voltage
0.5
+13
V
Tstg
storage temperature
65
+150
C
Tj
junction temperature
-
200
C
Tcase
case temperature
-
150
C
Unit
[1]
Conditions
[1]
Continuous use at maximum temperature will affect the MTTF.
5. Thermal characteristics
Table 5.
BLF2324M8LS200P
Product data sheet
Thermal characteristics
Symbol
Parameter
Conditions
Typ
Rth(j-c)
thermal resistance from junction to case
Tcase = 80 C; PL = 60 W
0.217 K/W
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Rev. 1 — 3 June 2014
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BLF2324M8LS200P
NXP Semiconductors
Power LDMOS transistor
6. Characteristics
Table 6.
DC characteristics
Tj = 25 C per section, unless otherwise specified.
Symbol Parameter
Conditions
V(BR)DSS drain-source breakdown voltage VGS = 0 V; ID = 1 mA
Min
Typ
Max
Unit
65
-
-
V
VGS(th)
gate-source threshold voltage
VDS = 10 V; ID = 100 mA
1.5
1.9
2.3
V
IDSS
drain leakage current
VGS = 0 V; VDS = 28 V
-
-
2.8
A
IDSX
drain cut-off current
VGS = VGS(th) + 3.75 V;
VDS = 10 V
-
26.8
-
A
IGSS
gate leakage current
VGS = 11 V; VDS = 0 V
-
-
280
nA
gfs
forward transconductance
VDS = 10 V; ID = 5.1 A
-
1.2
-
S
RDS(on)
drain-source on-state resistance VGS = VGS(th) + 3.75 V;
ID = 5.04 A
-
0.1
-
Table 7.
RF characteristics
Test signal: 1-carrier W-CDMA, PAR = 7.2 dB at 0.01 % probability on the CCDF,
3GPP test model 1; 64 DPCH; f1 = 2300 MHz; f2 = 2400 MHz; RF performance at VDS = 28 V;
IDq = 1740 mA; Tcase = 25 C; unless otherwise specified; in a class-AB production test circuit.
Symbol
Parameter
Conditions
Min
Typ Max
Unit
Gp
power gain
PL(AV) = 60 W
15.8
17.2 -
dB
RLin
input return loss
PL(AV) = 60 W
-
11
8
dB
D
drain efficiency
PL(AV) = 60 W
27
32
-
%
ACPR5M
adjacent channel power ratio (5 MHz)
PL(AV) = 60 W
-
37 34
dBc
7. Test information
7.1 Ruggedness in class-AB operation
The BLF2324M8LS200P is capable of withstanding a load mismatch corresponding to
VSWR = 10 : 1 through all phases under the following conditions: VDS = 28 V;
IDq = 1740 mA; PL = 200 W (CW); f = 2300 MHz.
7.2 Impedance information
Table 8.
Typical impedance
Measured load-pull data half section; VDS = 28 V; IDq = 860 mA; typical values unless otherwise
specified.
f
ZS[1]
ZL[1]
(MHz)
()
()
2300
4.24 j6.5
1.5 j5.4
2400
7.47 j6.07
1.5 j5.5
[1]
BLF2324M8LS200P
Product data sheet
ZS and ZL defined in Figure 1.
All information provided in this document is subject to legal disclaimers.
Rev. 1 — 3 June 2014
© NXP Semiconductors N.V. 2014. All rights reserved.
3 of 11
BLF2324M8LS200P
NXP Semiconductors
Power LDMOS transistor
GUDLQ
=/
JDWH
=6
DDI
Fig 1.
Definition of transistor impedance
7.3 Test circuit
PP
&
PP
5
&
&
&
&
&
&
PP
&
5
&
&
&
&
&
&
DDD
See Table 9 for list of components.
Fig 2.
Component layout
Table 9.
List of components
See Figure 2 for component layout.
The used PCB material is Rogers RO4350B with a thickness of 0.76 mm.
BLF2324M8LS200P
Product data sheet
Component
Description
Value
C1, C2, C9, C10
multilayer ceramic chip capacitor
6.8 F
[1]
C3, C4, C6, C7
multilayer ceramic chip capacitor
1 F
[2]
C5, C8
multilayer ceramic chip capacitor
33 pF
[1]
C11, C12, C13, C14
multilayer ceramic chip capacitor
0.1 F
[2]
C15, C16
electrolytic capacitor
1000 F; 50 V
R1, R2
chip resistor
5.1
[1]
American Technical Ceramics type 100B or capacitor of same quality.
[2]
Murata or capacitor of same quality.
[3]
Vishay Dale or resistor of same quality.
All information provided in this document is subject to legal disclaimers.
Rev. 1 — 3 June 2014
Remarks
[3]
© NXP Semiconductors N.V. 2014. All rights reserved.
4 of 11
BLF2324M8LS200P
NXP Semiconductors
Power LDMOS transistor
7.4 Graphical data
7.4.1 1-Tone CW
DDD
Ș'
*S
G%
*S
Ș'
3/ G%P
VDS = 28 V; IDq = 1740 mA.
(1) f = 2300 MHz
(2) f = 2400 MHz
Fig 3.
Power gain and drain efficiency as function of output power; typical values
7.4.2 1-Tone CW pulsed
DDD
Ș'
*S
G%
*S
Ș'
3/ G%P
VDS = 28 V; IDq = 1740 mA.
(1) f = 2300 MHz
(2) f = 2400 MHz
Fig 4.
BLF2324M8LS200P
Product data sheet
Power gain and drain efficiency as function of output power; typical values
All information provided in this document is subject to legal disclaimers.
Rev. 1 — 3 June 2014
© NXP Semiconductors N.V. 2014. All rights reserved.
5 of 11
BLF2324M8LS200P
NXP Semiconductors
Power LDMOS transistor
7.4.3 1-Carrier W-CDMA
DDD
*S
G%
Ș'
$&350
G%F
DDD
*S
Ș'
3/ G%P
VDS = 28 V; IDq = 1740 mA.
3/ G%P
VDS = 28 V; IDq = 1740 mA.
(1) f = 2300 MHz
(1) f = 2300 MHz
(2) f = 2400 MHz
(2) f = 2400 MHz
Fig 5.
Power gain and drain efficiency as function of
output power; typical values
Fig 6.
Adjacent power channel ratio (5 MHz) as a
function of output power; typical values
DDD
3$5
G%
3/ G%P
VDS = 28 V; IDq = 1740 mA.
(1) f = 2300 MHz
(2) f = 2400 MHz
Fig 7.
Peak-to-average ratio as a function of output power; typical values
BLF2324M8LS200P
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 1 — 3 June 2014
© NXP Semiconductors N.V. 2014. All rights reserved.
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NXP Semiconductors
Power LDMOS transistor
8. Package outline
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Fig 8.
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Package outline SOT539B
BLF2324M8LS200P
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 1 — 3 June 2014
© NXP Semiconductors N.V. 2014. All rights reserved.
7 of 11
BLF2324M8LS200P
NXP Semiconductors
Power LDMOS transistor
9. Handling information
CAUTION
This device is sensitive to ElectroStatic Discharge (ESD). Observe precautions for handling
electrostatic sensitive devices.
Such precautions are described in the ANSI/ESD S20.20, IEC/ST 61340-5, JESD625-A or
equivalent standards.
10. Abbreviations
Table 10.
Abbreviations
Acronym
Description
3GPP
3rd Generation Partnership Project
CCDF
Complementary Cumulative Distribution Function
DPCH
Dedicated Physical Channel
CW
Continuous Wave
ESD
ElectroStatic Discharge
LDMOS
Laterally Diffused Metal Oxide Semiconductor
MTTF
Mean Time To Failure
PAR
Peak-to-Average Ratio
VSWR
Voltage Standing Wave Ratio
W-CDMA
Wideband Code Division Multiple Access
11. Revision history
Table 11.
Revision history
Document ID
Release date Data sheet status
Change notice Supersedes
BLF2324M8LS200P v.1
20140603
-
BLF2324M8LS200P
Product data sheet
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 1 — 3 June 2014
-
© NXP Semiconductors N.V. 2014. All rights reserved.
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NXP Semiconductors
Power LDMOS transistor
12. Legal information
12.1 Data sheet status
Document status[1][2]
Product status[3]
Definition
Objective [short] data sheet
Development
This document contains data from the objective specification for product development.
Preliminary [short] data sheet
Qualification
This document contains data from the preliminary specification.
Product [short] data sheet
Production
This document contains the product specification.
[1]
Please consult the most recently issued document before initiating or completing a design.
[2]
The term ‘short data sheet’ is explained in section “Definitions”.
[3]
The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status
information is available on the Internet at URL http://www.nxp.com.
12.2 Definitions
Draft — The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
modifications or additions. NXP Semiconductors does not give any
representations or warranties as to the accuracy or completeness of
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Short data sheet — A short data sheet is an extract from a full data sheet
with the same product type number(s) and title. A short data sheet is intended
for quick reference only and should not be relied upon to contain detailed and
full information. For detailed and full information see the relevant full data
sheet, which is available on request via the local NXP Semiconductors sales
office. In case of any inconsistency or conflict with the short data sheet, the
full data sheet shall prevail.
Product specification — The information and data provided in a Product
data sheet shall define the specification of the product as agreed between
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Notwithstanding any damages that customer might incur for any reason
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Right to make changes — NXP Semiconductors reserves the right to make
changes to information published in this document, including without
limitation specifications and product descriptions, at any time and without
notice. This document supersedes and replaces all information supplied prior
to the publication hereof.
BLF2324M8LS200P
Product data sheet
Suitability for use — NXP Semiconductors products are not designed,
authorized or warranted to be suitable for use in life support, life-critical or
safety-critical systems or equipment, nor in applications where failure or
malfunction of an NXP Semiconductors product can reasonably be expected
to result in personal injury, death or severe property or environmental
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inclusion and/or use of NXP Semiconductors products in such equipment or
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Applications — Applications that are described herein for any of these
products are for illustrative purposes only. NXP Semiconductors makes no
representation or warranty that such applications will be suitable for the
specified use without further testing or modification.
Customers are responsible for the design and operation of their applications
and products using NXP Semiconductors products, and NXP Semiconductors
accepts no liability for any assistance with applications or customer product
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Semiconductors product is suitable and fit for the customer’s applications and
products planned, as well as for the planned application and use of
customer’s third party customer(s). Customers should provide appropriate
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applications and products.
NXP Semiconductors does not accept any liability related to any default,
damage, costs or problem which is based on any weakness or default in the
customer’s applications or products, or the application or use by customer’s
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testing for the customer’s applications and products using NXP
Semiconductors products in order to avoid a default of the applications and
the products or of the application or use by customer’s third party
customer(s). NXP does not accept any liability in this respect.
Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) will cause permanent
damage to the device. Limiting values are stress ratings only and (proper)
operation of the device at these or any other conditions above those given in
the Recommended operating conditions section (if present) or the
Characteristics sections of this document is not warranted. Constant or
repeated exposure to limiting values will permanently and irreversibly affect
the quality and reliability of the device.
Terms and conditions of commercial sale — NXP Semiconductors
products are sold subject to the general terms and conditions of commercial
sale, as published at http://www.nxp.com/profile/terms, unless otherwise
agreed in a valid written individual agreement. In case an individual
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Rev. 1 — 3 June 2014
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Power LDMOS transistor
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Non-automotive qualified products — Unless this data sheet expressly
states that this specific NXP Semiconductors product is automotive qualified,
the product is not suitable for automotive use. It is neither qualified nor tested
in accordance with automotive testing or application requirements. NXP
Semiconductors accepts no liability for inclusion and/or use of
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In the event that customer uses the product for design-in and use in
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Translations — A non-English (translated) version of a document is for
reference only. The English version shall prevail in case of any discrepancy
between the translated and English versions.
12.4 Trademarks
Notice: All referenced brands, product names, service names and trademarks
are the property of their respective owners.
13. Contact information
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: [email protected]
BLF2324M8LS200P
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 1 — 3 June 2014
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NXP Semiconductors
BLF2324M8LS200P
Power LDMOS transistor
14. Contents
1
1.1
1.2
1.3
2
3
4
5
6
7
7.1
7.2
7.3
7.4
7.4.1
7.4.2
7.4.3
8
9
10
11
12
12.1
12.2
12.3
12.4
13
14
Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1
General description . . . . . . . . . . . . . . . . . . . . . 1
Features and benefits . . . . . . . . . . . . . . . . . . . . 1
Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Pinning information . . . . . . . . . . . . . . . . . . . . . . 2
Ordering information . . . . . . . . . . . . . . . . . . . . . 2
Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2
Thermal characteristics . . . . . . . . . . . . . . . . . . 2
Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Test information . . . . . . . . . . . . . . . . . . . . . . . . . 3
Ruggedness in class-AB operation . . . . . . . . . 3
Impedance information . . . . . . . . . . . . . . . . . . . 3
Test circuit. . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Graphical data . . . . . . . . . . . . . . . . . . . . . . . . . 5
1-Tone CW . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
1-Tone CW pulsed . . . . . . . . . . . . . . . . . . . . . . 5
1-Carrier W-CDMA . . . . . . . . . . . . . . . . . . . . . . 6
Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 7
Handling information. . . . . . . . . . . . . . . . . . . . . 8
Abbreviations . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
Revision history . . . . . . . . . . . . . . . . . . . . . . . . . 8
Legal information. . . . . . . . . . . . . . . . . . . . . . . . 9
Data sheet status . . . . . . . . . . . . . . . . . . . . . . . 9
Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Contact information. . . . . . . . . . . . . . . . . . . . . 10
Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.
© NXP Semiconductors N.V. 2014.
All rights reserved.
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: [email protected]
Date of release: 3 June 2014
Document identifier: BLF2324M8LS200P