AEGIS SEMICONDUTORES LTDA. A5F:600.XXHY VOLTAGE RATINGS VRRM , VR – (V) rep. peak reverse voltage Part Number Max. VRSM , VR – (V) Max. nonrep. peak reverse voltage TJ = 0 to 125ºC TJ = -40 to 0ºC TJ = 25 to 125ºC A5F:600.02HY 200 200 300 A5F:600.04HY 400 400 500 A5F:600.06HY 600 600 700 A5F:600.08HY 800 800 900 A5F:600.10HY 1000 1000 1100 A5F:600.12HY 1200 1200 1300 A5F:600.14HY 1400 1330 1500 A5F:600.16HY 1600 1520 1700 A5F:600.18HY 1800 1710 1900 A5F:600.20HY 2000 1900 2100 MAXIMUM ALLOWABLE RATINGS PARAMETER VALUE TJ Junction Temperature -40 to 125 Tstg Storage Temperature -40 to 150 Max. Av. current @ Max. TC IF(AV) IF(RMS) Nom. RMS current 600 70 1015 O 2 1/2 It 2 1/2 Max. I t capability di/dt Max. Non-repetitive rate-ofrise current PGM Max. Peak gate power PG(AV) Max. Av. gate power +IGM Max. Peak gate current -VGM Max. Peak negative gate voltage F Mounting Force - C A O C O 180 half sine wave - A 50 Hz half cycle sine wave 12500 60 Hz half cycle sine wave Initial T J = 200OC, rated VRRM applied after surge. A 14000 50 Hz half cycle sine wave 15000 60 Hz half cycle sine wave 710 I2t Max. I2t capability - C O 12000 IFSM Max. Peak non-rep. surge current NOTES UNITS 650 t = 10ms kA2s Initial T J = 200OC, no voltage applied after surge. O Initial T J = 200 C, rated VRRM applied after surge. t = 8.3 ms O Initial T J = 200 C, no voltage applied after surge. 1000 t = 10ms 920 t = 8.3 ms O Initial T J = 200 C, no voltage applied after surge. 10000 kA2s1/2 800 A/ms 16 W 3 W 4 A 15 15150(3400) +- 10% V N(Lbf) I2t for time t x = I2t1/2 * tx1/2. (0.1 < tx < 10ms). TJ = 125OC, VD = VDRM, ITM = 1600A. Gate pulse: 20V, 20 W, apriximately 40% of non-repetitive value. tp < 5 ms tp < 5 ms - AEGIS SEMICONDUTORES LTDA. A5F:600.XXHY CHARACTERISTICS MIN. TYP. MAX. UNITS VTM peak on-state voltage PARAMETER --- 2.15 2.45 VF(TO)1 Low-level threshold --- --- 1.31 VF(TO)2 High-level threshold --- --- 1.55 rT1 Low-level resistance --- --- 0.48 rT2 High-level resistance --- --- 0.38 IL Latching current --- 350 IH Holding current --- td Delay time V V TEST CONDITIONS Initial TJ = 25 OC, 50-60Hz half sine, Ipeak = 2025A. TJ = 125O C 2 Av. power = V T(TO) * IT(AV) +rT * [IT(RMS)] mW Use low values for ITM < p rated IT(AV) --- mA TC = 125O C, 12V anode. Gate pulse: 10V, 20W, 100ms. 120 500 mA TC = 25 C, 12V anode. Initial IT = 15A. --- 0.5 1.5 ms TC = 25 C, VD = rated VDRM , 50A resistive load. Gate pulse: 10V, 20W, 10ms, 1ms rise time. tq Turn-off time --- --- 60 ms tq(diode) Turn-off time with feedback diode --- --- 50 IRM(REC) Recovery current --- 93 --- A QRR Recovered charge --- 166 --- mC 700 --- --- --- --- 30 60 --- --- 300 50 80 150 --- --- 3.3 --- 1.3 2.5 O O IGT DC gate current to trigger VGT DC gate voltage to trigger VGD DC gate voltage not to trigger RthJC Thermal resistance, junction-to-case V/ms lin. To 80% rated VDRM . Gate: 0V, 100W. O ms dv/dt Critical rate-of-rise of off- 500 state voltage 1000 IRM, IDM Peak reverse and offstate current TJ = 125OC, ITM = 500A, di/dt = 25A/ms, VR = 50V. Dv/dt = 200 --- --- V/ms mA mA V V 0.035 --- 0.041 O O 0.042 --- --- 0.0300 wt Weight --- 255(9.0) --- Case Style --- TO-200AC Higher dv/dt values avaliable. TJ = 125OC, Rated VRRM and VDRM , gate open. TC = -40OC TC = 25OC TC = -40OC +12V anode-to-cathode. For recommended gate drive see "Gate Characteristics" figure. TC = 25OC TC = 25OC, Max. Value which will not trigger with rated VDRM anode-to-cathode. C/W DC operation, double side coolde. --- --- --- TJ = 125OC. Exp. to 100% or lin. To 80%OV DRM , gate open. O ----- TJ = 125OC, ITM = 750A, diR/dt = 50A/ms. TJ = 125OC, Exp. To 67% VDRM , gate open. 0.3 RthCS Thermal resistance, case-to-sink TJ = 125 C, ITM = 500A, di/dt = 25A/ms, VR = 1V. dv/dt = 600 V/ms lin. To 40% rated VDRM . Gate: 0V, 100W. C/W 180O sine wave, double side coolde. C/W 120O rectangular wave, double side cooled. C/W Mtg. Surface smooth, flat and greased. Single side cooled. For double side, divide by 2. g(oz.) --- JEDEC --- O AEGIS SEMICONDUTORES LTDA. A5F:600.XXHY AEGIS SEMICONDUTORES LTDA. A5F:600.XXHY AEGIS SEMICONDUTORES LTDA. A5F:600.XXHY TO-200AC