C4D10120E VRRM = 1200 V Silicon Carbide Schottky Diode IF (TC=135˚C) = 16 A Z-Rec Rectifier ® Qc Features • • • • • 52 nC Package 1.2kV Schottky Rectifier Zero Reverse Recovery Current High-Frequency Operation Temperature-Independent Switching Behavior Positive Temperature Coefficient on VF Benefits • • • • • = TO-252-2 Replace Bipolar with Unipolar Rectifiers Essentially No Switching Losses Higher Efficiency Reduction of Heat Sink Requirements Parallel Devices Without Thermal Runaway PIN 1 CASE PIN 2 Applications • • Solar Inverters Power Factor Correction Part Number Package Marking C4D10120E TO-252-2 C4D10120 Maximum Ratings (TC=25°C unless otherwise specified) Symbol Parameter Unit Test Conditions VRRM Repetitive Peak Reverse Voltage 1200 V VRSM Surge Peak Reverse Voltage 1300 V VDC DC Blocking Voltage 1200 V Continuous Forward Current 33 16 10 A TC=25˚C TC=135˚C TC=155˚C IFRM Repetitive Peak Forward Surge Current 47 31 A TC=25˚C, tP=10 ms, Half Sine pulse TC=110˚C, tP=10 ms, Half Sine pulse IFSM Non-Repetitive Peak Forward Surge Current 71 59 A TC=25˚C, tP=10 ms, Half Sine pulse TC=110˚C, tP=10 ms, Half Sine pulse IF,Max Non-Repetitive Peak Forward Current 750 620 A TC=25˚C, tP=10 ms, Pulse TC=110˚C, tP=10 ms, Pulse Ptot Power Dissipation 170 74 W TC=25˚C TC=110˚C TJ Operating Junction Range -55 to +175 ˚C Tstg Storage Temperature Range -55 to +135 ˚C IF 1 Value C4D10120E Rev. C Note Electrical Characteristics Symbol Parameter Typ. Max. Unit Test Conditions Note VF Forward Voltage 1.5 2.2 1.8 3 V IF = 10 A TJ=25°C IF = 10 A TJ=175°C IR Reverse Current 30 55 250 350 μA VR = 1200 V TJ=25°C VR = 1200 V TJ=175°C QC Total Capacitive Charge 52 nC VR = 800 V, IF = 10A di/dt = 200 A/μs TJ = 25°C C Total Capacitance 754 45 38 pF VR = 0 V, TJ = 25°C, f = 1 MHz VR = 400 V, TJ = 25˚C, f = 1 MHz VR = 800 V, TJ = 25˚C, f = 1 MHz Note: 1. This is a majority carrier diode, so there is no reverse recovery charge. Thermal Characteristics Symbol RθJC Parameter Typ. Unit TO-252 Package Thermal Resistance from Junction to Case 0.88 °C/W Typical Performance 20 5 TJ=-55°C TJ= 25°C TJ= 75°C TJ =125°C TJ =175°C 18 16 4 14 IF (A) IR (mA) 12 10 8 3 TJ=-55°C TJ= 25°C TJ= 75°C TJ =125°C TJ =175°C 2 6 4 1 2 0 0 0.5 1 1.5 2 2.5 3 VF (V) Figure 1. Forward Characteristics 2 C4D10120E Rev. C 3.5 4 0 0 500 1000 VR (V) 1500 Figure 2. Reverse Characteristics 2000 Typical Performance C4D10120E Current Derating 80 120 180.0 110 160.0 70 10% 20% 30% 50% 70% DC 60 90 80 50 70 Duty Duty Duty Duty Duty 140.0 120.0 PTot (W) I (A) IF(PEAK) Peak Forward Current (A) F(peak) 100 40 60 50 30 100.0 80.0 60.0 40 20 30 40.0 20 10 20.0 10 0.0 00 25 25 50 50 75 75 100 100 125 125 150 150 Tc Case Temperature (°°C) 25 175 175 50 75 125 150 175 TC ˚C TC ˚C Figure 3. Current Derating Figure 4. Power Derating 800 70 700 60 600 50 500 40 C (pF) Qrr (nC) 100 30 400 300 20 200 10 100 0 0 200 400 600 800 VR (V) Figure 5. Recovery Charge vs. Reverse Voltage 3 C4D10120E Rev. C 1000 0 0.1 1 10 100 VR (V) Figure 6. Capacitance vs. Reverse Voltage 1000 Typical Performance Thermal Resistance (˚C/W) 1 0.1 0.01 0.001 0.0001 1E-6 10E-6 100E-6 1E-3 10E-3 100E-3 1 T (sec) Figure 7. Transient Thermal Impedance Diode Model Diode Model CSD04060 VfVTfT== VTV+T+If*R If*RT T -3 V VTT==0.965 + (Tj *J*-1.3*10 ) -3) 0.98+(T -1.71*10 -3 RTT==0.096 + (Tj * 1.06*10 ) -4 0.040+(T J* 5.32*10 ) Note: Tj = Diode Junction Temperature In Degrees Celsius, valid from 25°C to 175°C VT 4 C4D10120E Rev. C RT 10 Package Dimensions Inches POS Package TO-252-2 * Millimeters Min Max Min Max A .250 .289 6.350 7.341 B .197 .215 5.004 5.461 C .027 .050 .686 1.270 D* .270 .322 6.858 8.179 E .178 .182 4.521 4.623 F .025 .045 .635 1.143 G 44˚ 46˚ 44˚ 46˚ H .380 .410 9.652 10.414 J .090 TYP 2.286 TYP K 6˚ 8˚ 6˚ 8˚ L .086 .094 2.184 2.388 M .018 .034 .457 .864 N .035 .050 .889 1.270 P .231 .246 5.867 6.248 Q 0.00 .005 0.00 .127 R R0.010 TYP R0.254 TYP S .017 .023 .432 .584 T .038 .045 .965 1.143 U .021 .029 .533 .737 Note: * Tab “D” may not be present Recommended Solder Pad Layout .08 TO-252-2 Part Number Package Marking C4D10120E TO-252-2 C4D10120 Note: Recommended soldering profiles can be found in the applications note here: http://www.cree.com/power_app_notes/soldering 5 C4D10120E Rev. C Notes • RoHS Compliance The levels of RoHS restricted materials in this product are below the maximum concentration values (also referred to as the threshold limits) permitted for such substances, or are used in an exempted application, in accordance with EU Directive 2011/65/EC (RoHS2), as implemented January 2, 2013. RoHS Declarations for this product can be obtained from your Cree representative or from the Product Documentation sections of www.cree.com. • REACh Compliance REACh substances of high concern (SVHCs) information is available for this product. Since the European Chemical Agency (ECHA) has published notice of their intent to frequently revise the SVHC listing for the foreseeable future,please contact a Cree representative to insure you get the most up-to-date REACh SVHC Declaration. REACh banned substance information (REACh Article 67) is also available upon request. • This product has not been designed or tested for use in, and is not intended for use in, applications implanted into the human body nor in applications in which failure of the product could lead to death, personal injury or property damage, including but not limited to equipment used in the operation of nuclear facilities, life-support machines, cardiac defibrillators or similar emergency medical equipment, aircraft navigation or communication or control systems, or air traffic control systems. Copyright © 2014 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree, the Cree logo, and Zero Recovery are registered trademarks of Cree, Inc. 6 C4D10120E Rev. C Cree, Inc. 4600 Silicon Drive Durham, NC 27703 USA Tel: +1.919.313.5300 Fax: +1.919.313.5451 www.cree.com/power