BAV19W, BAV20W, BAV21W www.vishay.com Vishay Semiconductors Small Signal Switching Diodes, High Voltage FEATURES • Silicon epitaxial planar diodes • For general purpose • AEC-Q101 qualified • Base P/N-E3 - RoHS-compliant, commercial grade • Base P/N-HE3 - RoHS-compliant, AEC-Q101 qualified • Material categorization: For definitions of compliance www.vishay.com/doc?99912 MECHANICAL DATA Case: SOD-123 Weight: approx. 10.3 mg Packaging codes/options: please see 18/10K per 13" reel (8 mm tape), 10K/box 08/3K per 7" reel (8 m tape), 15K/box PARTS TABLE PART TYPE DIFFERENTIATION BAV19W VR = 100 V BAV20W VR = 150 V BAV21W VR = 200 V ORDERING CODE TYPE MARKING INTERNAL CONSTRUCTION REMARKS A8 Single diode Tape and reel A9 Single diode Tape and reel AA Single diode Tape and reel BAV19W-E3-08 or BAV19W-E3-18 BAV19W-HE3-08 or BAV19W-HE3-18 BAV20W-E3-08 or BAV20W-E3-18 BAV20W-HE3-08 or BAV20W-HE3-18 BAV21W-E3-08 or BAV21W-E3-18 BAV21W-HE3-08 or BAV21W-HE3-18 ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified) PARAMETER TEST CONDITION PART SYMBOL VALUE UNIT BAV19W BAV20W BAV21W BAV19W BAV20W BAV21W VR VR VR VRRM VRRM VRRM IF 100 150 200 120 200 250 250 V V V V V V mA IF(AV) 200 mA IFRM IFSM Ptot 625 1 410 mA A mW SYMBOL VALUE UNIT RthJA 375 °C/W Tj 150 °C Storage temperature range (1) Tstg - 65 to + 150 °C Operating temperature range Top - 55 to + 150 °C Continuous reverse voltage Repetitive peak reverse voltage DC Forward current (1) Rectified current (average) half wave rectification with resist. load (1) Repetitive peak forward current (1) Surge forward current Power dissipation (1) f 50 Hz, = 180° t < 1 s, Tj = 25 °C THERMAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) PARAMETER Thermal resistance junction to ambient air TEST CONDITION (1) Junction temperature (1) Note (1) Valid provided that leads are kept at ambient temperature Rev. 1.5, 13-May-13 Document Number: 85725 1 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 BAV19W, BAV20W, BAV21W www.vishay.com Vishay Semiconductors ELECTRICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) PARAMETER TEST CONDITION Forward voltage MAX. UNIT IF = 100 mA PART VF 1 V IF = 200 mA VF 1.25 V IR 100 nA VR = 100 V Leakage current MIN. TYP. VR = 100 V, Tj = 100 °C BAV19W IR 15 μA VR = 150 V BAV20W IR 100 nA μA VR = 150 V, Tj = 100 °C BAV20W IR 15 VR = 200 V BAV21W IR 100 nA VR = 200 V, Tj = 100 °C BAV21W IR 15 μA Dynamic forward resistance IF = 10 mA rf 5 VR = 0, f = 1 MHz CD 1.5 pF IF = 30 mA, IR = 30 mA, iR = 3 mA, RL = 100 trr Diode capacitace Reverse recovery time BAV19W SYMBOL 50 ns Ptot - Admissible Power Dissipation (mW) TYPICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) I F - Forward Current (mA) 1000 Tj = 100 °C 100 10 25 °C 1 0.1 0.01 0 0.2 0.4 0.6 0.8 0.2 DC current IF Current (rectif.) I O 0.1 0 18859 60 90 120 100 0 Tamb - Ambient Temperature (°C) 40 80 120 160 200 Tamb - Ambient Temperature (°C) Fig. 3 - Admissible Power Dissipation vs. Ambient Temperature 100 10 1 1 150 Fig. 2 - Admissible Forward Current vs. Ambient Temperature Rev. 1.5, 13-May-13 200 0 rf - Dynamic Forward Resistance (Ω) I O , I F - Admissible Forward Current (A) 0.3 30 300 18860 Fig. 1 - Forward Current vs. Forward Voltage 0 400 1 VF - Forward Voltage (V) 18858 500 18861 10 100 IF - Forward Current (mA) Fig. 4 - Dynamic Forward Resistance vs. Forward Current Document Number: 85725 2 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 BAV19W, BAV20W, BAV21W www.vishay.com Vishay Semiconductors 100 10 Reverse Voltage BAV19W VR = 100 V BAV20W VR = 150 V BAV21W VR = 200 V 1 0.1 0 18862 40 80 120 160 Tj - Junction Temperature (°C) 2.0 1.8 CD - Diode Capacitance (pF) IR(Tj)/IR (25 °C) - Leakage Current 1000 T j = 25 ° C 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 0.1 200 18863 Fig. 5 - Leakage Current vs. Junction Temperature 1 10 100 VR - Reverse Voltage (V) Fig. 6 - Capacitance vs. Reverse Voltage 100 IFSM (A) 10 1 TJ = 25 °C - Prior to Surge 0.1 0.000001 0.00001 0.0001 0.001 0.01 0.1 1 tp - Test Pulse (s) Fig. 7 - Non-Repetitive Peak Forward Current vs. Pulse Duration Maximum Admissible Values of Square Pulse Rev. 1.5, 13-May-13 Document Number: 85725 3 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 BAV19W, BAV20W, BAV21W www.vishay.com Vishay Semiconductors 0.10 (0.004) 0.15 (0.006) 8° 0.45 (0.018) 0.25 (0.010) 0° to 0.2 (0.008) 1 (0.039) 1.35 (0.053) 0.1 (0.004) max. PACKAGE DIMENSIONS in millimeters (inches): SOD-123 0.5 (0.020) ref. Cathode bar Mounting Pad Layout 2.85 (0.112) 2.55 (0.100) 0.85 (0.033) 2.5 (0.098) 0.85 (0.033) 3.55 (0.140) 1.7 (0.067) 3.85 (0.152) 1.40 (0.055) 0.45 (0.018) 0.65 (0.026) 0.85 (0.033) Rev. 4 - Date: 24. Sep. 2009 Document no.: S8-V-3910.01-001 (4) 17432 Rev. 1.5, 13-May-13 Document Number: 85725 4 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. 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