PROCESS CP331 Power Transistor NPN - High Voltage Darlington Transistor Chip PROCESS DETAILS Die Size 39.4 x 39.4 MILS Die Thickness 9.1 MILS Base Bonding Pad Area 7.9 x 7.9 MILS Emitter Bonding Pad Area 7.9 x 7.9 MILS Top Side Metalization Al-Si - 30,000Å Back Side Metalization Au-As - 18,000Å GEOMETRY GROSS DIE PER 5 INCH WAFER 11,055 PRINCIPAL DEVICE TYPE CZT2000 BACKSIDE COLLECTOR R0 R0 (19-September 2011) w w w. c e n t r a l s e m i . c o m PROCESS CP331 Typical Electrical Characteristics R0 (19-September 2011) w w w. c e n t r a l s e m i . c o m