Infineon AUIRLL024N Automotive grade Datasheet

AUTOMOTIVE GRADE
AUIRLL024N
HEXFET® Power MOSFET
Features
 Advanced Planar Technology
 Low On-Resistance
 Logic Level Gate Drive
 Dynamic dv/dt Rating
 150°C Operating Temperature
 Fast Switching
 Fully Avalanche Rated
 Repetitive Avalanche Allowed up to Tjmax
 Lead-Free, RoHS Compliant
 Automotive Qualified *
VDSS
55V
RDS(on) max.
ID
0.065
3.1A
D
S
Description
Specifically designed for Automotive applications, this Cellular
design of HEXFET® Power MOSFETs utilizes the latest
processing techniques to achieve low on-resistance per silicon
area. This benefit combined with the fast switching speed and
ruggedized device design that HEXFET power MOSFETs are
well known for, provides the designer with an extremely efficient
and reliable device for use in Automotive and a wide variety of
other applications.
Base part number
Package Type
AUIRLL024N
SOT-223
D
G
SOT-223
AUIRLL024N
G
Gate
D
Drain
Standard Pack
Form
Quantity
Tape and Reel
2500
S
Source
Orderable Part Number
AUIRLL024NTR
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress
ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is not
implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal resistance
and power dissipation ratings are measured under board mounted and still air conditions. Ambient temperature (TA) is 25°C, unless
otherwise specified.
Symbol
Parameter
Max.
ID @ TA = 25°C
Continuous Drain Current, VGS @ 10V 
4.4
ID @ TA = 25°C
ID @ TA = 70°C
IDM
PD @TA = 25°C
Continuous Drain Current, VGS @ 10V 
Continuous Drain Current, VGS @ 10V 
Pulsed Drain Current 
Maximum Power Dissipation (PCB Mount) 
3.1
2.5
12
2.1
PD @TA = 25°C
Maximum Power Dissipation (PCB Mount) 
Linear Derating Factor (PCB Mount) 
Gate-to-Source Voltage
Single Pulse Avalanche Energy (Thermally Limited) 
Avalanche Current 
Repetitive Avalanche Energy 
Peak Diode Recovery dv/dt 
Operating Junction and
Storage Temperature Range
VGS
EAS
IAR
EAR
dv/dt
TJ
TSTG
Thermal Resistance
Symbol
RJA
RJA
Parameter
Junction-to-Ambient (PCB Mount, steady state) 
Junction-to-Ambient (PCB Mount, steady state) 
Units
A
1.0
8.3
± 16
120
3.1
0.1
5.0
-55 to + 150
W
W/°C
V
mJ
A
mJ
V/ns
°C
Typ.
Max.
Units
90
50
120
60
°C/W
HEXFET® is a registered trademark of Infineon.
*Qualification standards can be found at www.infineon.com
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AUIRLL024N
Static @ TJ = 25°C (unless otherwise specified)
V(BR)DSS
V(BR)DSS/TJ
Parameter
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
RDS(on)
Static Drain-to-Source On-Resistance
VGS(th)
gfs
Gate Threshold Voltage
Forward Trans conductance
IDSS
Drain-to-Source Leakage Current
IGSS
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Min. Typ. Max. Units
Conditions
55
––– –––
V VGS = 0V, ID = 250µA
––– 0.048 ––– V/°C Reference to 25°C, ID = 1mA
––– ––– 0.065
VGS = 10V, ID = 3.1A 
––– ––– 0.080  VGS = 5.0V, ID = 2.5A 
––– ––– 0.100
VGS = 4.0V, ID = 1.6A 
1.0
–––
2.0
V VDS = VGS, ID = 250µA
3.3
––– –––
S VDS = 25V, ID = 1.9A
––– –––
25
VDS = 55V, VGS = 0V
µA
––– ––– 250
VDS = 44V,VGS = 0V,TJ = 125°C
––– ––– 100
VGS = 16V
nA
––– ––– -100
VGS = -16V
Dynamic Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Total Gate Charge
Qg
Qgs
Gate-to-Source Charge
Qgd
Gate-to-Drain Charge
td(on)
Turn-On Delay Time
tr
Rise Time
td(off)
Turn-Off Delay Time
Fall Time
tf
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Diode Characteristics
Parameter
Continuous Source Current
IS
(Body Diode)
Pulsed Source Current
ISM
(Body Diode)
VSD
Diode Forward Voltage
trr
Reverse Recovery Time
Reverse Recovery Charge
Qrr
ton
Forward Turn-On Time
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
10.4
1.5
5.5
7.4
21
18
25
510
140
58
15.6
2.3
8.3
–––
–––
–––
–––
–––
–––
–––
Min.
Typ. Max. Units
–––
–––
3.1
–––
–––
12
–––
–––
–––
–––
39
63
1.0
58
94
ID = 1.9A
nC VDS = 44V
VGS = 5.0V, See Fig 6 and 13 
VDD = 28V
ID = 1.9A
ns
RG = 24
RD = 15See Fig. 10 
VGS = 0V
pF VDS = 25V
ƒ = 1.0MHz, See Fig.5
Conditions
MOSFET symbol
showing the
A
integral reverse
p-n junction diode.
V TJ = 25°C,IS = 1.9A,VGS = 0V 
ns TJ = 25°C ,IF = 1.9A,
nC di/dt = 100A/µs 
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
 Repetitive rating; pulse width limited by max. junction temperature. (See fig. 11)
 Starting TJ = 25°C, L = 25mH, RG = 25, IAS = 3.1A. (See fig. 12)
ISD 1.9A, di/dt 270A/µs, VDD V(BR)DSS, TJ  150°C.
 Pulse width 300µs; duty cycle  2%.
 When mounted on FR-4 board using minimum recommended footprint.
When mounted on 1 inch square copper board, for comparison with other SMD devices.
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AUIRLL024N
100
100
VGS
15V
10V
7.0V
5.5V
4.5V
4.0V
3.5V
BOTTOM 2.7V
I D , Drain-to-Source Current (A)
I D , Drain-to-Source Current (A)
10
2.7V
20µs PULSE WIDTH
TJ = 25 °C
1
0.1
1
10
10
2.7V
2.0
RDS(on) , Drain-to-Source On Resistance
(Normalized)
I D , Drain-to-Source Current (A)
TJ = 25 °C
TJ = 150 °C
10
V DS= 25V
20µs PULSE WIDTH
6
8
10
12
VGS , Gate-to-Source Voltage (V)
Fig. 3 Typical Transfer Characteristics
3
10
100
Fig. 2 Typical Output Characteristics
100
4
1
VDS , Drain-to-Source Voltage (V)
Fig. 1 Typical Output Characteristics
2
20µs PULSE WIDTH
TJ = 150 °C
1
0.1
100
VDS , Drain-to-Source Voltage (V)
1
VGS
15V
10V
7.0V
5.5V
4.5V
4.0V
3.5V
BOTTOM 2.7V
TOP
TOP
ID = 3.1A
1.5
1.0
0.5
0.0
-60 -40 -20
VGS = 10V
0
20
40
60
80 100 120 140 160
TJ, Junction Temperature
( °C)
Fig. 4 Normalized On-Resistance
vs. Temperature
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AUIRLL024N
VGS = 0V,
f = 1MHz
Ciss = Cgs + Cgd , Cds SHORTED
Crss = Cgd
Coss = Cds + Cgd
C, Capacitance (pF)
800
600
Ciss
400
Coss
200
VGS , Gate-to-Source Voltage (V)
15
1000
ID = 1.9A
12
VDS = 44V
VDS = 27V
VDS = 11V
9
6
3
FOR TEST CIRCUIT
SEE FIGURE 13
Crss
0
0
1
10
100
0
4
VDS , Drain-to-Source Voltage (V)
Fig 5. Typical Capacitance vs.
Drain-to-Source Voltage
16
20
100
OPERATION IN THIS AREA LIMITED
BY RDS(on)
ID , Drain Current (A)
ISD , Reverse Drain Current (A)
12
Fig 6. Typical Gate Charge vs.
Gate-to-Source Voltage
100
10
TJ = 150 °C
1
10
100us
1ms
1
10ms
TJ = 25 °C
0.1
0.4
TC = 25 °C
TJ = 150 °C
Single Pulse
V GS = 0 V
0.6
0.8
1.0
1.2
VSD ,Source-to-Drain Voltage (V)
Fig. 7 Typical Source-to-Drain Diode
Forward Voltage
4
8
QG , Total Gate Charge (nC)
1.4
0.1
0.1
1
10
100
1000
VDS , Drain-to-Source Voltage (V)
Fig 8. Maximum Safe Operating Area
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AUIRLL024N
ID , Drain Current (A)
4.0
3.0
2.0
Fig 10a. Switching Time Test Circuit
1.0
0.0
25
50
75
100
125
150
TC , Case Temperature ( °C)
Fig 9. Maximum Drain Current Vs.
Case Temperature
Fig 10b. Switching Time Waveforms
Thermal Response (Z thJA )
1000
100
D = 0.50
0.20
0.10
10
0.05
PDM
0.02
t1
0.01
1
t2
0.1
0.00001
Notes:
1. Duty factor D = t 1 / t 2
2. Peak T J = P DM x ZthJA + TA
SINGLE PULSE
(THERMAL RESPONSE)
0.0001
0.001
0.01
0.1
1
10
100
t1, Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
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AUIRLL024N
15V
D.U.T
RG
+
V
- DD
IAS
20V
tp
A
0.01
Fig 12a. Unclamped Inductive Test Circuit
EAS , Single Pulse Avalanche Energy (mJ)
DRIVER
L
VDS
300
TOP
250
BOTTOM
ID
1.4A
2.5A
3.1A
200
150
100
50
0
25
50
75
100
125
150
Starting TJ , Junction Temperature ( °C)
V(BR)DSS
tp
Fig 12c. Maximum Avalanche Energy
Vs. Drain Current
I AS
Fig 12b. Unclamped Inductive Waveforms
Id
Vds
Vgs
Vgs(th)
Qgs1 Qgs2
Qgd
Qgodr
Fig 13a. Basic Gate Charge Waveform
6
Fig 13b. Gate Charge Test Circuit
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AUIRLL024N
SOT-223 (TO-261AA) Package Outline (Dimensions are shown in millimeters (inches)
SOT-223(TO-261AA) Part Marking Information
LL024N
Date Code
Y= Year
WW= Work Week
A= Automotive, Lead Free
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
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AUIRLL024N
SOT-223(TO-261AA) Tape and Reel (Dimensions are shown in millimeters (inches)
2.05 (.080)
1.95 (.077)
TR
4.10 (.161)
3.90 (.154)
0.35 (.013)
0.25 (.010)
1.85 (.072)
1.65 (.065)
7.55 (.297)
7.45 (.294)
16.30 (.641)
15.70 (.619)
7.60 (.299)
7.40 (.292)
1.60 (.062)
1.50 (.059)
TYP.
FEED DIRECTION
12.10 (.475)
11.90 (.469)
2.30 (.090)
2.10 (.083)
7.10 (.279)
6.90 (.272)
NOTES :
1. CONTROLLING DIMENSION: MILLIMETER.
2. OUTLINE CONFORMS TO EIA-481 & EIA-541.
3. EACH O330.00 (13.00) REEL CONTAINS 2,500 DEVICES.
13.20 (.519)
12.80 (.504)
15.40 (.607)
11.90 (.469)
4
330.00
(13.000)
MAX.
NOTES :
1. OUTLINE COMFORMS TO EIA-418-1.
2. CONTROLLING DIMENSION: MILLIMETER..
3. DIMENSION MEASURED @ HUB.
4. INCLUDES FLANGE DISTORTION @ OUTER EDGE.
50.00 (1.969)
MIN.
18.40 (.724)
MAX.
14.40 (.566)
12.40 (.488)
4
3
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
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AUIRLL024N
Qualification Information
Qualification Level
Moisture Sensitivity Level
Machine Model
Human Body Model
ESD
Charged Device Model
RoHS Compliant
Automotive
(per AEC-Q101)
Comments: This part number(s) passed Automotive qualification. Infineon’s
Industrial and Consumer qualification level is granted by extension of the higher
Automotive level.
SOT-223
MSL1
Class M2 (+/- 150V)†
AEC-Q101-002
Class H1A (+/- 500V)†
AEC-Q101-001
Class C5 (+/- 2000V)†
AEC-Q101-005
Yes
† Highest passing voltage.
Revision History
Date
3/25/2014
10/29/2015
Comments





Added "Logic Level Gate Drive" bullet in the features section on page 1
Updated part marking on page 7
Updated data sheet with new IR corporate template
Updated datasheet with corporate template
Corrected ordering table on page 1.
Published by
Infineon Technologies AG
81726 München, Germany
© Infineon Technologies AG 2015
All Rights Reserved.
IMPORTANT NOTICE
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(“Beschaffenheitsgarantie”). With respect to any examples, hints or any typical values stated herein and/or any
information regarding the application of the product, Infineon Technologies hereby disclaims any and all warranties and
liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third
party.
In addition, any information given in this document is subject to customer’s compliance with its obligations stated in this
document and any applicable legal requirements, norms and standards concerning customer’s products and any use of
the product of Infineon Technologies in customer’s applications.
The data contained in this document is exclusively intended for technically trained staff. It is the responsibility of
customer’s technical departments to evaluate the suitability of the product for the intended application and the
completeness of the product information given in this document with respect to such application.
For further information on the product, technology, delivery terms and conditions and prices please contact your nearest
Infineon Technologies office (www.infineon.com).
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Due to technical requirements products may contain dangerous substances. For information on the types in question
please contact your nearest Infineon Technologies office.
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