Diodes DMN4026SK3 40v n-channel enhancement mode mosfet Datasheet

DMN4026SK3
40V N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
V(BR)DSS
Features
RDS(ON)

ID
TC = +25°C
24mΩ @VGS = 10V
28A
32mΩ @VGS = 4.5V
24A



40V
NEW PRODUCT
100% Unclamped Inductive Switch (UIS) Test in Production
Low On-resistance
Fast Switching Speed
Totally Lead-Free & Fully RoHS compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)

Mechanical Data
Description


This MOSFET has been designed to minimize the on-state resistance
(RDS(ON)) and yet maintain superior switching performance, making it
ideal for high efficiency power management applications.


Applications


Backlighting

DC-DC Converters

Power Management Functions
Case: TO252
Case Material: Molded Plastic, “Green” Molding Compound. UL
Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Matte Tin Finish Annealed over Copper Leadframe.
Solderable per MIL-STD-202, Method 208 e3
Weight: 0.33 grams (Approximate)
D
D
TO252
G
D
G
Top View
Pin-Out
Top View
S
S
Equivalent Circuit
Ordering Information (Note 4)
Product
DMN4026SK3-13
Notes:
Case
TO252
Packaging
2,500/Tape & Reel
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
= Manufacturer’s Marking
N4026S = Product Type Marking Code
.
YYWW = Date Code Marking
YY = Year (ex: 15 = 2015)
WW = Week (01 to 53)
N4026S
YYWW
DMN4026SK3
Document Number DS37277 Rev. 1 - 2
1 of 7
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January 2015
© Diodes Incorporated
DMN4026SK3
Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Characteristic
Symbol
VDSS
VGSS
Maximum Body Diode Continuous Current
Pulsed Drain Current (10µs Pulse, Duty Cycle = 1%)
Avalanche Current (Note 7) L = 0.1mH
IS
IDM
IAS
Value
40
±20
28
18
2.5
70
18
Avalanche Energy (Note 7) L = 0.1mH
EAS
17
Drain-Source Voltage
Gate-Source Voltage
NEW PRODUCT
Continuous Drain Current (Note 6) VGS = 10V
TC = +25°C
TC = +100°C
Steady
State
ID
Unit
V
V
mJ
A
A
A
A
Thermal Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
Symbol
TA = +25°C
TA = +70°C
Steady state
t<10s
TA = +25°C
TA = +70°C
Steady state
t<10s
Total Power Dissipation (Note 5)
Thermal Resistance, Junction to Ambient (Note 5)
Total Power Dissipation (Note 6)
Thermal Resistance, Junction to Ambient (Note 6)
PD
RθJA
PD
RθJA
Thermal Resistance, Junction to Case (Note 6)
Operating and Storage Temperature Range
RθJC
TJ, TSTG
Value
1.6
1.0
75
32.7
3.4
2.1
37
18.1
4.5
-55 to +150
Unit
W
°C/W
W
°C/W
°C
Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS (Note 8)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
ON CHARACTERISTICS (Note 8)
Gate Threshold Voltage
Symbol
Min
Typ
Max
Unit
BVDSS
IDSS
IGSS
40






1
100
V
µA
nA
VGS = 0V, ID = 250µA
VDS = 40V, VGS = 0V
VGS = ±20V, VDS = 0V
VGS(TH)
RDS(ON)
VSD

15
20
0.7
3
24
32
1.0
V
Static Drain-Source On-Resistance
1



VDS = VGS, ID = 250µA
VGS = 10V, ID = 6A
VGS = 4.5V, ID = 5A
VGS = 0V, IS = 1.0A
Ciss
Coss
Crss
RG
Qg
Qg
Qgs
Qgd
tD(ON)
tR
tD(OFF)
tF
tRR
QRR














1181
85
63
1.5
9.6
21.3
3.7
3.0
4.3
4.6
19.5
3.1
12.0
3.85














Diode Forward Voltage
DYNAMIC CHARACTERISTICS (Note 9)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge (VGS = 4.5V)
Total Gate Charge (VGS = 10V)
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Notes:
mΩ
V
Test Condition
pF
VDS = 20V, VGS = 0V,
f = 1.0MHz
Ω
VDS = 0V, VGS = 0V, f = 1.0MHz
nC
VDS = 20V, ID = 8A
ns
VDD = 25V, RL = 2.5Ω
VGS = 10V, RG = 3Ω
ns
nC
IF = 8A, di/dt = 100A/μs
IF = 8A, di/dt = 100A/μs
5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout.
6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate.
7. IAS and EAS ratings are based on low frequency and duty cycles to keep TJ = +25°C.
8. Short duration pulse test used to minimize self-heating effect.
9. Guaranteed by design. Not subject to product testing.
DMN4026SK3
Document Number DS37277 Rev. 1 - 2
2 of 7
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January 2015
© Diodes Incorporated
DMN4026SK3
20
VGS=4.0V
16.0
VGS=4.5V
14.0
VGS=10.0V
VGS=3.0V
12.0
VGS=3.5V
10.0
8.0
6.0
14
12
10
8
6
2.0
2
0.0
0
0.024
0.022
0.02
VGS=2.5V
0.018
0.016
VGS=1.8V
0.014
0.012
0.01
0.008
0.006
0
5
10
15
20
ID, DRAIN-SOURCE CURRENT (A)
Figure 3. Typical On-Resistance vs. Drain Current
and Gate Voltage
0.04
VGS= 4.5V
0.035
150℃
0.03
0.025
125℃
0.02
85℃
0.015
25℃
0.01
-55℃
0.005
0
0
5
10
15
ID, DRAIN CURRENT (A)
20
Document Number DS37277 Rev. 1 - 2
25℃
150℃
85℃
1
2
3
4
VGS, GATE-SOURCE VOLTAGE (V)
Figure 2. Typical Transfer Characteristic
5
0.1
0.09
0.08
0.07
0.06
ID=3.3A
0.05
0.04
0.03
0.02
0.01
ID=8.2A
0
3
4
5
6
7
VGS, GATE-SOURCE VOLTAGE (V)
Figure 4. Typical Transfer Characteristic
8
1.6
1.4
1.2
VGS=4.5V, ID=5.0A
1
0.8
VGS=10.0V, ID=8.0A
0.6
-50
-25
0
25
50
75
100
125
150
TJ, JUNCTION TEMPERATURE (℃)
Figure 5. Typical On-Resistance vs. Drain Current and
Temperature
DMN4026SK3
-55℃
125℃
0
5
RDS(ON), DRAIN-SOURCE ON-RESISTANCE
(Ω)
1
2
3
4
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 1. Typical Output Characteristic
RDS(ON), DRAIN-SOURCE ON-RESISTANCE
(NORMALIZED)
RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω)
16
4
VGS=2.5V
0
VDS=5.0V
18
ID, DRAIN CURRENT (A)
18.0
4.0
RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω)
NEW PRODUCT
ID, DRAIN CURRENT (A)
20.0
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Figure 6. On-Resistance Variation with Temperature
January 2015
© Diodes Incorporated
RDS(ON), DRAIN-SOURCE ON-RESISTANCE
(Ω)
DMN4026SK3
0.04
0.03
VGS=4.5V, ID=5.0A
0.01
VGS=10V, ID=8.0A
0
-25
0
25
50
75 100 125
TJ, JUNCTION TEMPERATURE (℃)
2.5
ID=1mA
2
1.5
ID=250μA
1
0.5
0
150
-50
Figure 7. On-Resistance Variation with Temperature
18
0
25
50
75 100 125 150
TJ, JUNCTION TEMPERATURE (℃)
Figure 8. Gate Threshold Variation vs. Junction
Temperature
150℃
VGS=0V, TA=25℃
IDSS, LEAKAGE CURRENT (nA)
IS, SOURCE CURRENT (A)
-25
10000
20
16
VGS=0V, TA=85℃
14
12
VGS=0V, TA=125℃
10
8
VGS=0V, TA=150℃
6
VGS=0V,
TA=-55℃
4
2
1000
125℃
100
0
85℃
10
25℃
1
0.1
0
0.3
0.6
0.9
1.2
VSD, SOURCE-DRAIN VOLTAGE (V)
Figure 9. Diode Forward Voltage vs. Current
0
10
15
20
25
30
35
40
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 10. Typical Drain-Source Leakage Current vs.
Voltage
10000
5
10
VGS, GATE-SOURCE VOLTAGE (V)
CT, JUNCTION CAPACITANCE (pF)
NEW PRODUCT
0.02
-50
3
VGS(TH), GATE THRESHOLD VOLTAGE (V)
0.05
f=1MHz
Ciss
1000
Coss
100
Crss
9
8
7
VDS=20V, ID=8.0A
6
5
4
3
2
1
0
10
0
5
10
15
20
25
30
35
40
VDS, DRAIN-SOURCE VOLTAGE (V)
Document Number DS37277 Rev. 1 - 2
2
4
6
8
10 12 14 16 18 20 22
Qg, TOTAL GATE CHARGE (nC)
Figure 12. Gate Charge
Figure 11. Typical Junction Capacitance
DMN4026SK3
0
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DMN4026SK3
100
RDS(ON) Limited
ID, DRAIN CURRENT (A)
10
PW =100μs
PW =1μs
PW =1ms
PW =10ms
1
PW =100ms
PW =1s
TJ(Max)=150℃
TC=25℃
Single Pulse
DUT on Infinite Heatsink
VGS=10V
0.1
0.01
0.1
1
10
100
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 13. SOA, Safe Operation Area
1
r (t), TRANSIENT THERMAL RESISTANCE
NEW PRODUCT
PW =10μs
D=0.5
D=0.9
D=0.3
D=0.7
0.1
D=0.1
D=0.05
D=0.02
0.01
D=0.01
D=0.005
RθJC(t)=r(t) * RθJC
RθJC=4.19℃/W
Duty Cycle, D=t1 / t2
D=Single Pulse
0.001
1E-06
1E-05
DMN4026SK3
Document Number DS37277 Rev. 1 - 2
0.0001
0.001
0.01
t1, PULSE DURATION TIME (sec)
Figure 14. Transient Thermal Resistance
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0.1
1
10
January 2015
© Diodes Incorporated
DMN4026SK3
Package Outline Dimensions
Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for the latest version.
E
A
b3
7° ± 1°
c
NEW PRODUCT
L3
D
A2
L4
e
TO252 (DPAK)
Dim Min
Max
Typ
A
2.19
2.39
2.29
A1
0.00
0.13
0.08
A2
0.97
1.17
1.07
b
0.64
0.88 0.783
b2
0.76
1.14
0.95
b3
5.21
5.46
5.33
c
0.45
0.58 0.531
D
6.00
6.20
6.10
D1
5.21
e
2.286
E
6.45
6.70
6.58
E1
4.32
H
9.40 10.41 9.91
L
1.40
1.78
1.59
L3
0.88
1.27
1.08
L4
0.64
1.02
0.83
a
0°
10°
All Dimensions in mm
H
b(3x)
b2(2x)
Gauge Plane
0.508
D1
E1
Seating Plane
a
L
A1
2.74REF
Suggested Pad Layout
Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version.
X1
Y1
Dimensions
C
X
X1
Y
Y1
Y2
Y2
C
Value (in mm)
4.572
1.060
5.632
2.600
5.700
10.700
Y
X
DMN4026SK3
Document Number DS37277 Rev. 1 - 2
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January 2015
© Diodes Incorporated
DMN4026SK3
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INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).
NEW PRODUCT
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application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or
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written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
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failure of the life support device or to affect its safety or effectiveness.
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Copyright © 2015, Diodes Incorporated
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DMN4026SK3
Document Number DS37277 Rev. 1 - 2
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