CYSTEKEC BAR40CS3 Small signal schottky (double) diode Datasheet

Spec. No. : C302S346.13
Revised Date : 2012.02.10
Page No. : 1/7
CYStech Electronics Corp.
Small Signal Schottky (double) diodes
BAR40S3/BAR40AS3
BAR40CS3/BAR40SS3
Description
Planar silicon Schottky barrier diodes encapsulated in a SOT-323 small plastic SMD package.
Single diodes and double diodes with different pinning are available.
Features
•Very small conduction losses
•Low forward voltage drop
•Small plastic SMD package
•Pb-free package
Applications
•Ultra high-speed switching
•Voltage clamping
•Protection circuits
•Blocking diodes
Pinning
Outline
Pin
1
2
3
BAR40
A
NC
K
Description
BAR40A
BAR40C
K1
A1
K2
A2
A1,A2
K1,K2
3
3
3
1
SOT-323
BAR40S
A1
K2
K1,A1
1
2
1
2
2
N.C.
(1) BAR40
(2)BAR40A
3
2
1
Marking:
3
(3)BAR40C
1
2
(4)BAR40S
Type
BAR40 S3
BAR40AS3
BAR40CS3
BAR40SS3
Marking Code
B4
B7
5C
B8
Diode configuration and symbol
BAR40S3/BAR40AS3/BAR40CS3/BAR40SS3
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C302S346.13
Revised Date : 2012.02.10
Page No. : 2/7
Absolute Maximum Ratings
• Maximum Temperatures
Storage Temperature Tstg.................................................................................................... -65~+150 °C
Junction Temperature Tj .......................................................................................................-55~ +125°C
• Maximum Power Dissipation
Total Power Dissipation (Ta=25°C) Ptot (Note) ......................................................................... 200 mW
• Maximum Voltages and Currents (Ta=25°C)
Repetitive Peak Reverse Voltage VRRM............................................................................................... 40 V
Continuous Forward Current IF ................................................................................................... 200 mA
Repetitive Peak Forward Current(tp≤1s,duty cycle≤0.5)………………………………………… 300mA
Non-repetitive Peak Forward Current (tp<10ms, sinusoidal) IFSM ............................................... 600 mA
Note: for double diodes, Ptot is the total power dissipation of both diodes.
Characteristics (Ta=25°C)
Characteristic
Symbol
Reverse Breakdown Voltage
Forward Voltage (Note 1)
VBR
Condition
IR=100μA
Min.
Max.
Unit
40
-
V
VF(1)
IF=1mA
-
320
mV
VF(2)
IF=40mA
-
500
mV
VF(3)
IF=100mA
VR=30V, Tj=25℃
-
550
mV
-
200
nA
-
10
pF
-
5
ns
Reverse Leakage Current (Note 2)
IR
Diode Capacitance
CD
Reverse Recovery Time
trr
VR=1V, f=1MHz
IF=IR=10mA RL=100Ω
measured at IR=1mA
Notes: 1.pulse test, tp=380μs,duty cycle<2%.
2.pulse test, tp=5ms,duty cycle<2%.
BAR40S3/BAR40AS3/BAR40CS3/BAR40SS3
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C302S346.13
Revised Date : 2012.02.10
Page No. : 3/7
Characteristic Curves
Forward Current & Forward Voltage
Diode Capacitance & Reverse-Biased Voltage
100
250
Diode Capacitance-Cd (pF)
Forward Current-IF (mA)
200
150
100
10
50
0
1
0
200
400
600
Forward Voltage-VF (mV)
BAR40S3/BAR40AS3/BAR40CS3/BAR40SS3
800
1000
0.1
1
10
100
Reverse Biased Voltage-VR (V)
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C302S346.13
Revised Date : 2012.02.10
Page No. : 4/7
Reel Dimension
Carrier Tape Dimension
BAR40S3/BAR40AS3/BAR40CS3/BAR40SS3
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C302S346.13
Revised Date : 2012.02.10
Page No. : 5/7
Recommended wave soldering condition
Product
Pb-free devices
Peak Temperature
260 +0/-5 °C
Soldering Time
5 +1/-1 seconds
Recommended temperature profile for IR reflow
Profile feature
Average ramp-up rate
(Tsmax to Tp)
Preheat
−Temperature Min(TS min)
−Temperature Max(TS max)
−Time(ts min to ts max)
Time maintained above:
−Temperature (TL)
− Time (tL)
Peak Temperature(TP)
Time within 5°C of actual peak
temperature(tp)
Ramp down rate
Time 25 °C to peak temperature
Sn-Pb eutectic Assembly
Pb-free Assembly
3°C/second max.
3°C/second max.
100°C
150°C
60-120 seconds
150°C
200°C
60-180 seconds
183°C
60-150 seconds
240 +0/-5 °C
217°C
60-150 seconds
260 +0/-5 °C
10-30 seconds
20-40 seconds
6°C/second max.
6 minutes max.
6°C/second max.
8 minutes max.
Note : All temperatures refer to topside of the package, measured on the package body surface.
BAR40S3/BAR40AS3/BAR40CS3/BAR40SS3
CYStek Product Specification
Spec. No. : C302S346.13
Revised Date : 2012.02.10
Page No. : 6/7
CYStech Electronics Corp.
SOT-323 Dimension
Marking:
3
A
Q
A1
1
L4_
XX
C
Lp
2
detail Z
bp
e1
W
B
Diagram:
e
E
D
A
Z
θ
He
0
v
A
2 mm
1
scale
3-Lead SOT-323 Plastic
Surface Mounted Package.
CYStek Package Code: S3
• BAR40 S3 : Single Diode
(Marking Code B4)
• BAR40CS3 : Common Cathode. (Marking Code 5C)
• BAR40AS3 : Common Anode. (Marking Code B7)
• BAR40SS3 : Series Connected. (Marking Code B8)
*: Typical
Inches
Min.
Max.
0.0315 0.0433
0.0000 0.0039
0.0118 0.0157
0.0039 0.0098
0.0709 0.0866
0.0453 0.0531
0.0512
-
DIM
A
A1
bp
C
D
E
e
Millimeters
Min.
Max.
0.80
1.10
0.00
0.10
0.30
0.40
0.10
0.25
1.80
2.20
1.15
1.35
1.3
-
DIM
e1
He
Lp
Q
v
w
θ
Inches
Min.
Max.
0.0256
0.0787 0.0886
0.0059 0.0177
0.0051 0.0091
0.0079
0.0079
-
Millimeters
Min.
Max.
0.65
2.00
2.25
0.15
0.45
0.13
0.23
0.2
0.2
10°
0°
Notes: 1.Controlling dimension: millimeters.
2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material.
3.If there is any question with packing specification or packing method, please contact your local CYStek sales office.
Material:
• Lead: Pure tin plated.
• Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0.
Important Notice:
• All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek.
• CYStek reserves the right to make changes to its products without notice.
• CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
• CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
BAR40S3/BAR40AS3/BAR40CS3/BAR40SS3
CYStek Product Specification
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