UN ESD3.3V08P-LC Transient voltage suppressors array for esd protection Datasheet

Transient Voltage Suppressors Array for ESD Protection
Low Capacitance
ESD3.3V08P-LC
Description
The
ESD3.3V08P-LC
is
designed
to
protect
MSOP-08
voltage
sensitive components from ESD and transient voltage events.
Excellent clamping
capability,
low
leakage,
and fast
response time, make these parts ideal for ESD protection
on designs where board space is at a premium.
Feature
Functional Diagram
u
50 Watts Peak Pulse Power per Line (tp=8/20μs)
u
Protects Six High-Speed I/O lines
u
Low clamping voltage
u
Working voltages : 3.3V
u
Low leakage current
u
IEC61000-4-2 (ESD) ±15kV (air), ±8kV (contact)
u
IEC61000-4-4 (EFT) 40A (5/50ηs)
Applications
u
USB Series or High-Speed Data Line
u
Microprocessor based equipment
u
Video Graphs Cards
u
Digital Video Interface (DVI)
u
High Definition Multi-Media Interface (HDMI)
u
ATM Interfaces
u
IEEE1394 Fire wire Ports
Mechanical Characteristics
u
MSOP-08 Package
u
Molding Compound Flammability Rating : UL 94V-0
u
Weight 25.0 Milligrams (Approximate)
u
Quantity Per Reel : 1,000pcs
u
Reel Size : 7 inch
u
Lead Finish : Lead Free
Mechanical Characteristics
Symbol
Parameter
Value
Units
50
W
PPP
Peak Pulse Power (tp=8/20μs waveform)
TL
Lead Soldering Temperature
260 (10sec)
ºC
TSTG
Storage Temperature Range
-55 to +150
ºC
Operating Temperature Range
-55 to +150
ºC
TJ
IEC61000-4-2 (ESD)
Air Discharge
±15
Contact Discharge
±8
IEC61000-4-4 (EFT)
40
UN Semiconductor Co.,Ltd.
Revision January 06, 2016
KV
A
www.unsemi.com.tw
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@ UN Semiconductor Co., Ltd. 2016
Specifications are subject to change without notice.
Please refer to www.unsemi.com.tw for current information.
Transient Voltage Suppressors Array for ESD Protection
Low Capacitance
ESD3.3V08P-LC
Electrical Characteristics (@ 25℃ Unless Otherwise Specified )
Part Number
ESD3.3V08P-LC
Device
Marking
VRWM
(V)
(Max.)
VB
(V)
(Min.)
IT
(mA)
VC
@1A
(Max.)
(Max.)
ULC3306
MB
3.3
4.5
1
12
15
VC
(@A)
1.5
IR
(μA)
(Max.)
C
(pF)
(Typ.)
0.1
0.5
Characteristic Curves
Fig1.
8/20μs Pulse Waveform
Fig2. ESD Pulse Waveform (according to IEC 61000-4-2)
tr
100
100%
TEST
WAVEFORM
PARAMETERS
tr=8μs
td=20μs
Peak Value IPP
80
Percent of Peak Pulse Current %
IPP - Peak Pulse Current - % of IPP
120
60
40
td=t IPP/2
20
0
0
5
10
15
20
25
10%
tr = 0.7~1ns
Time (ns)
30ns
30
60ns
t - Time (μs)
Fig3.
90%
Power Derating Curve
% of Rated Power
110
100
90
80
70
60
50
40
30
20
10
0
0
25
50
75
100
125
150
Ambient Temperature – TA (ºC)
UN Semiconductor Co.,Ltd.
Revision January 06, 2016
www.unsemi.com.tw
2/3
@ UN Semiconductor Co., Ltd. 2016
Specifications are subject to change without notice.
Please refer to www.unsemi.com.tw for current information.
Transient Voltage Suppressors Array for ESD Protection
Low Capacitance
ESD3.3V08P-LC
Characteristic Curves
Fig4.
ESD Clamping (+8KV Contac per IEC61000-4-2)
Fig5.
ESD Clamping (-8KV Contac per IEC61000-4-2)
MSOP-08 Package Outline & Dimensions
Symbol
UN Semiconductor Co.,Ltd.
Revision January 06, 2016
Nom. Max. Min. Nom. Max.
-
-
0.043
A1
0.000
-
0.004 0.00
A2
0.030 0.033 0.037 0.75 0.85 0.95
b
0.009 0.012 0.015 0.22 0.30 0.38
-
-
1.10
-
0.10
c
0.005 0.006 0.009 0.13 0.15 0.23
D
0.118 BSC
E1
0.118 BSC
3.00 BSC
E
0.193 BSC
4.90 BSC
e
0.026 BSC
0.65 BSC
3.00 BSC
0.016 0.021 0.026 0.40 0.53 0.66
L1
0.037 REF
N
8
θ
Soldering Footprint
Min.
Millimeters
A
L
θ
Inches
0°
0.95 REF
8
-
8°
0°
-
aaa
0.004
0.10
bbb
0.003
0.08
ccc
0.010
0.25
8°
Symbol
Inches
Millimeters
C
0.1890
4.80
G
0.1448
3.78
P
0.026
0.65
X
0.0161
0.41
Y
0.0402
1.02
Z
0.2291
5.82
www.unsemi.com.tw
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@ UN Semiconductor Co., Ltd. 2016
Specifications are subject to change without notice.
Please refer to www.unsemi.com.tw for current information.
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