AWB207 5 ~ 4000 MHz MMIC Amplifier Features Description 16 dB Gain at 2000 MHz The AWB207, a gain block amplifier MMIC, has a high linearity, high gain, and high efficiency over a wide range of frequency, being suitable for use in both receiver and transmitter of telecommunication systems up to 4 GHz. It has an active bias network for stable current over temperature and process variation. The amplifier is available in a SOT89 package and passes through the stringent DC, RF, and reliability tests. 18 dBm P1dB 37.5 dBm Output IP3 2.7 dB NF MTTF > 100 Years Single Supply Minimal External Components AWB207 Package Style: SOT89 Typical Performance (Supply Voltage = +5 V, TA = +25 C, Z0 = 50 ) Applications Parameters Units Typical Frequency MHz 900 2000 Gain dB 16.6 16.0 CDMA & GSM (900 MHz) S11 dB -15 -14 WCDMA (2000 MHz) S22 dB -11 -15 Output IP31) CATV (50 ~ 1000 MHz, 50 ohm) dBm 37.5 37.5 Noise Figure dB 2.3. 2.7 SMATV (950 ~ 2150 MHz) Output P1dB dBm 21 18 SMATV & Wideband Current mA 74 74 Device Voltage V +5 +5 (500 ~ 3000 MHz) 1) OIP3 is measured with two tones at an output power of +6 dBm/tone separated by 1 MHz. Product Specifications Parameters Units Min Typ. Testing Frequency MHz 2000 Gain dB 16.0 S11 dB -14 S22 dB -15 Output IP3 dBm 37.5 Noise Figure dB 2.7 Output P1dB dBm 18 Current mA 74 Device Voltage V +5 Max Pin Configuration Absolute Maximum Ratings Parameters Rating Operating Case Temperature -40 to 85 C Storage Temperature -40 to 150 C Device Voltage +6 V Operating Junction Temperature Input RF Power (Continuous) Pin No. Function 1 RF IN +150 C 2 GND +22 dBm 3 RF OUT & Bias * Please find the max. input power data from http://www.asb.co.kr/pdf/Maximum_Input_Power_Analysis.pdf 1/9 ASB Inc. [email protected] Tel: +82-42-528-7225 October 2013 AWB207 5 ~ 4000 MHz MMIC Amplifier Outline Drawing Part No. Lot No. AWB207 Pxxxx Symbols A L b b1 C D D1 E E1 e1 H S e Dimensions (In mm) MIN NOM 1.40 1.50 0.89 1.04 0.36 0.42 0.41 0.47 0.38 0.40 4.40 4.50 1.40 1.60 3.64 --2.40 2.50 2.90 3.00 0.35 0.40 0.65 0.75 1.40 1.50 Pin No. Function 1 RF IN 2 GND 3 RF OUT & Bias MAX 1.60 1.20 0.48 0.53 0.43 4.60 1.75 4.25 2.60 3.10 0.45 0.85 1.60 Mounting Recommendation (In mm) Note: 1. The number and size of ground via holes in a circuit board is critical for thermal and RF grounding considerations. 2. We recommend that the ground via holes be placed on the bottom of the lead pin 2 and exposed pad of the device for better RF and thermal performance, as shown in the drawing at the left side. ` 2/9 ASB Inc. [email protected] Tel: +82-42-528-7225 October 2013 AWB207 5 ~ 4000 MHz MMIC Amplifier APPLICATION CIRCUIT CDMA & GSM 900 +5 V Frequency (MHz) 900 Magnitude S21 (dB) 16.6 Magnitude S11 (dB) -15 Magnitude S22 (dB) -11 Output P1dB (dBm) 21 Output IP31) (dBm) 37.5 Noise Figure (dB) 2.3 Device Voltage (V) +5 Current (mA) 74 1) OIP3 is measured with two tones at an output power of +6 dBm/tone separated by 1 MHz. Board Layout (FR4, 40x40 mm2, 0.8T) Schematic Vs=5 V C4=1 F C3=100 pF L1=27 nH C1=82 pF RF IN C2=82 pF RF OUT AWB207 S-parameters & K-factor 20 0 -5 -10 S11 (dB) Gain (dB) 15 10 -15 5 -20 0 600 700 800 900 1000 1100 -25 600 1200 700 800 Frequency (MHz) 900 1000 1100 1200 Frequency (MHz) 0 5 4 Stability Factor S22 (dB) -5 -10 3 2 -15 1 -20 600 700 800 900 1000 1100 1200 0 0 500 Frequency (MHz) 3/9 1000 1500 2000 2500 3000 3500 Frequency (MHz) ASB Inc. [email protected] Tel: +82-42-528-7225 October 2013 AWB207 5 ~ 4000 MHz MMIC Amplifier APPLICATION CIRCUIT WCDMA 2000 +5 V Frequency (MHz) 2000 Magnitude S21 (dB) 16.0 Magnitude S11 (dB) -14 Magnitude S22 (dB) -15 Output P1dB (dBm) 18 Output IP31) (dBm) 37.5 Noise Figure (dB) 2.7 Device Voltage (V) +5 Current (mA) 74 1) OIP3 is measured with two tones at an output power of +6 dBm/tone separated by 1 MHz. Board Layout (FR4, 40x40 mm2, 0.8T) Schematic Vs=5 V C4=1 F C3=100 pF L1=3.9 nH C1=82 pF RF IN C2=82 pF RF OUT AWB207 S-parameters & K-factor 20 0 -5 15 S11 (dB) Gain (dB) -10 10 o -40 c o 25 c o 85 c 5 0 1700 1800 1900 2000 2100 2200 -15 o -40 c o 25 c o 85 c -20 2300 -25 1700 1800 1900 Frequency (MHz) 2000 2100 2200 2300 Frequency (MHz) 5 0 -5 4 Stability Factor S22 (dB) -10 -15 o -40 c o 25 c o 85 c -20 2 1 -25 -30 1700 3 0 1800 1900 2000 2100 2200 2300 0 500 Frequency (MHz) 4/9 1000 1500 2000 2500 3000 3500 Frequency (MHz) ASB Inc. [email protected] Tel: +82-42-528-7225 October 2013 AWB207 5 ~ 4000 MHz MMIC Amplifier Current vs. Temperature Gain vs. Temperature 90 18 17 16 Gain (dB) Current (mA) 80 70 15 60 Frequency = 2 GHz 14 50 -60 -40 -20 0 20 40 60 80 13 -60 100 -40 -20 22 42 20 40 18 16 Frequency = 2 GHz -40 -20 0 40 60 80 100 Output IP3 vs. Temperature Output IP3 (dBm) P1dB (dBm) P1dB vs. Temperature 12 -60 20 Temperature ( C) Temperature ( C) 14 0 o o 20 40 60 80 38 36 Frequency = 2 GHz 34 100 32 -60 -40 o -20 0 20 40 60 80 100 o Temperature ( C) Temperature ( C) NF vs. Temperature 5 4 NF (dB) 3 2 Frequency = 2 GHz 1 0 -60 -40 -20 0 20 40 60 80 100 o Temperature ( C) 5/9 ASB Inc. [email protected] Tel: +82-42-528-7225 October 2013 AWB207 5 ~ 4000 MHz MMIC Amplifier LTE ACLR – 10 MHz & 20 MHz -40 ACLR (dBc) -45 -50 -55 20 MHz BW -60 10 MHz BW -65 -70 0 2 4 6 Output Power (dBm) 8 10 1) Test Source : LTE_FDD_test model 3.1, BW: 10 MHz & 20 MHz, Test Frequency: 1.8 GHz LTE ACLR – 20 MHz 2) Test Source : LTE_FDD_test model 3.1, BW: 20 MHz, Test Frequency: 1.8 GHz 6/9 ASB Inc. [email protected] Tel: +82-42-528-7225 October 2013 AWB207 5 ~ 4000 MHz MMIC Amplifier APPLICATION CIRCUIT CATV(50 ohm) 50 ~ 1000 MHz +5 V Frequency (MHz) 50 500 1000 Magnitude S21 (dB) 16.3 16.1 15.7 Magnitude S11 (dB) -13 -18 -14 Magnitude S22 (dB) -12 -12 -12 Output P1dB (dBm) 20 21 20 Output IP31) (dBm) 35 36 35 Noise Figure (dB) 2.4 2.4 2.4 Device Voltage (V) +5 +5 +5 Current (mA) 70 70 70 1) OIP3 is measured with two tones at an output power of +6 dBm/tone separated by 1 MHz. Board Layout (FR4, 40x40 mm2, 0.8T) Schematic Vdevice=+5 V C4=1 F C3=100 pF L1=680 nH C1=1 nF RF IN C2=1 nF RF OUT AWB207 30 0 25 -5 20 -10 S11 (dB) Gain (dB) S-parameters & K-factor 15 -15 10 -20 5 -25 0 -30 0 200 400 600 800 1000 1200 0 200 400 Frequency (MHz) 5 -5 4 Stability Factor 0 S22 (dB) -10 -15 -20 800 1000 1200 3 2 1 -25 0 0 200 400 600 800 1000 1200 0 500 Frequency (MHz) 7/9 600 Frequency (MHz) 1000 1500 2000 2500 3000 3500 Frequency [MHz] ASB Inc. [email protected] Tel: +82-42-528-7225 October 2013 AWB207 5 ~ 4000 MHz MMIC Amplifier APPLICATION CIRCUIT SMATV 950 ~ 2150 MHz +5 V Frequency (MHz) 950 2150 Magnitude S21 (dB) 16.1 15.3 Magnitude S11 (dB) -18 -14 Magnitude S22 (dB) -13.5 -13 Output P1dB (dBm) 21 17.5 Output IP31) (dBm) 36 35 Noise Figure (dB) 2.4 3.1 Device Voltage (V) +5 +5 Current (mA) 74 74 1) OIP3 is measured with two tones at an output power of +6 dBm/tone separated by 1 MHz. Board Layout (FR4, 40x40 mm2, 0.8T) Schematic S-parameters & K-factor 0 20 -5 -10 S11 (dB) Gain (dB) 15 10 -15 5 -20 0 500 1000 1500 2000 -25 500 2500 1000 1500 2000 2500 Frequency (MHz) Frequency (MHz) 0 10 9 -5 8 Stability Factor 7 S22 (dB) -10 -15 -20 6 5 4 3 2 1 -25 0 500 1000 1500 2000 2500 0 0 500 Frequency (MHz) 8/9 1000 1500 2000 2500 3000 3500 Frequency [MHz] ASB Inc. [email protected] Tel: +82-42-528-7225 October 2013 AWB207 5 ~ 4000 MHz MMIC Amplifier APPLICATION CIRCUIT SMATV & Wideband 500 ~ 3000 MHz +5 V Frequency (MHz) 500 900 2000 3000 Magnitude S21 (dB) 16.0 15.5 14.5 15.3 Magnitude S11 (dB) -10 -10 -8 -12 Magnitude S22 (dB) -10 -9 -6 -10 Output P1dB (dBm) 21 20 20 18 Output IP31) (dBm) 37 35 34 33 Noise Figure (dB) 2.4 2.3 2.5 2.9 Device Voltage (V) +5 +5 +5 +5 Current (mA) 74 74 74 74 1) OIP3 is measured with two tones at an output power of +6 dBm/tone separated by 1 MHz. Board Layout (FR4, 40x40 mm2, 0.8T) Schematic S-parameters & K-factor 0 20 -5 -10 S11 (dB) Gain (dB) 15 10 -15 5 -20 0 -25 0 500 1000 1500 2000 2500 3000 3500 0 500 1000 1500 2000 2500 3000 3500 Frequency (MHz) Frequency (MHz) 0 S22 (dB) -5 -10 -15 -20 0 500 1000 1500 2000 2500 3000 3500 Frequency (MHz) 9/9 ASB Inc. [email protected] Tel: +82-42-528-7225 October 2013