DMNH6021SPS Green 60V 175°C N-CHANNEL ENHANCEMENT MODE MOSFET PowerDI5060-8 Product Summary Features RDS(ON) Max ID Max TC = +25°C 23mΩ @ VGS = 10V 55A 28mΩ @ VGS = 4.5V 48A BVDSS 60V Rated to +175°C – Ideal for High Ambient Temperature Environments 100% Unclamped Inductive Switching – Ensures More Reliable and Robust End Application High Conversion Efficiency Low RDS(ON) – Minimizes On-State Losses Low Input Capacitance ideal for high-efficiency power management applications. Applications Mechanical Data Description This MOSFET is designed to minimize the on-state resistance (RDS(ON)), yet maintain superior switching performance, making it Driving Solenoids Driving Relays Power Management Functions Fast Switching Speed Lead-Free Finish; RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability An Automotive-Compliant Part is Available Under Separate Data Sheet (DMNH6021SPSQ) ® Case: PowerDI 5060-8 Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminal Finish — Matte Tin Annealed over Copper Leadframe. Solderable per MIL-STD-202, Method 208 Weight: 0.097 grams (Approximate) PowerDI5060-8 Pin1 Top View Internal Schematic Bottom View S D S D S D G D Top View Pin Configuration Ordering Information (Note 4) Part Number DMNH6021SPS-13 Notes: Case PowerDI5060-8 Packaging 2,500/Tape & Reel 1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. All applicable RoHS exemptions applied. 2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 4. For packaging details, go to our website at http://www.diodes.com/products/packages.html. Marking Information = Manufacturer’s Marking H6021SS = Product Type Marking Code YYWW = Date Code Marking YY = Year (ex: 16 = 2016) WW = Week (01 - 53) PowerDI is a registered trademark of Diodes Incorporated. DMNH6021SPS Document number: DS37685 Rev. 2 - 2 1 of 7 www.diodes.com June 2016 © Diodes Incorporated DMNH6021SPS Maximum Ratings (@TA = +25°C, unless otherwise specified.) Characteristic Symbol VDSS VGSS Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS = 10V (Note 7) TC = +25°C TC = +100°C Maximum Continuous Body Diode Forward Current (Note 7) Pulsed Drain Current (10µs Pulse, Duty Cycle = 1%) Avalanche Current, L = 0.1mH (Note 8) Avalanche Energy, L = 0.1mH (Note 8) Value 60 ±20 55 39 55 88 35 64 Units V V Value 1.6 96 3.0 50 53 1.5 -55 to +175 Units W °C/W W °C/W W °C/W °C ID IS IDM IAS EAS A A A A mJ Thermal Characteristics Characteristic Total Power Dissipation (Note 5) Thermal Resistance, Junction to Ambient (Note 5) Total Power Dissipation (Note 6) Thermal Resistance, Junction to Ambient (Note 6) Total Power Dissipation (Note 7) Thermal Resistance, Junction to Case (Note 7) Operating and Storage Temperature Range Electrical Characteristics TA = +25°C Steady State TA = +25°C Steady State TC = +25°C Symbol PD RθJA PD RθJA PD RθJC TJ, TSTG (@TA = +25°C, unless otherwise specified.) Characteristic OFF CHARACTERISTICS (Note 9) Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Source Leakage ON CHARACTERISTICS (Note 9) Gate Threshold Voltage Symbol Min Typ Max Unit BVDSS IDSS IGSS 60 — — — — — — 1 ±100 V μA nA VGS = 0V, ID = 250μA VDS = 60V, VGS = 0V VGS = ±20V, VDS = 0V VGS(TH) RDS(ON) VSD — 12 18 0.75 3 23 28 1.2 V Static Drain-Source On-Resistance 1 — — — VDS = VGS, ID = 250μA VGS = 10V, ID = 12A VGS = 4.5V, ID = 12A VGS = 0V, IS = 20A CISS COSS CRSS RG QG QG QGS QGD tD(ON) tR tD(OFF) tF tRR — — — — — — — — — — — — — 1,016 153 76.8 2.5 9.5 19.7 3.6 4.8 4.2 13 27.5 15.3 20.8 — — — — — — — — — — — — — QRR — 13.9 — Diode Forward Voltage DYNAMIC CHARACTERISTICS (Note 10) Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance Total Gate Charge (VGS = 4.5V) Total Gate Charge (VGS = 10V) Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge Notes: mΩ V Test Condition pF VDS = 30V, VGS = 0V, f = 1MHz Ω VDS = 0V, VGS = 0V, f = 1MHz nC VDS = 30V, ID = 20A ns VDD = 30V, VGS = 10V, ID = 10A, RG = 4.7Ω, ns nC IF = 20A, di/dt = 100A/μs 5. Device mounted on FR-4 PC board, with minimum recommended pad layout, single sided. 6. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal bias to bottom layer 1-inch square copper plate. 7. Thermal resistance from junction to soldering point (on the exposed drain pad). 8. IAS and EAS rating are based on low frequency and duty cycles to keep TJ = +25°C. 9. Short duration pulse test used to minimize self-heating effect. 10. Guaranteed by design. Not subject to product testing. DMNH6021SPS Document number: DS37685 Rev. 2 - 2 2 of 7 www.diodes.com June 2016 © Diodes Incorporated DMNH6021SPS 30.0 30 VGS = 4.0V VDS = 10V VGS = 10 VGS = 10V 25.0 25 )A ( T 20 N E R R U 15 C N I A R D 10 ,D I ID, DRAIN CURRENT (A) ID, DRAIN CURRENT (A) VGS = 6.0V VGS = 5.0V 20.0 VGS = 4.5V VGS = 3.5V 15.0 10.0 VGS = 3.0V 5.0 TA = 175°C TA = 150°C 5 TA = 125°C TA = 85°C TA = 25°C TA = -55°C 0 RDS(ON), DRAIN-SOURCE ON-RESISTANCE () 22 VGS = 4.5V 20 18 16 VGS = 10V 14 12 0 5 10 15 20 25 ID, DRAIN-SOURCE CURRENT (A) Figure 3 Typical On-Resistance vs. Drain Current and Gate Voltage 0 5 24 0.035 ) ( E C N 0.03 A T S IS E R 0.025 -N O E C 0.02 R U O S -N 0.015 IA R D , )N 0.01 RDS(ON), DRAIN-SOURCE ON-RESISTANCE () 1 2 3 4 VDS, DRAIN-SOURCE VOLTAGE (V) Figure 1 Typical Output Characteristics 30 1 1.5 2 2.5 3 3.5 4 VGS, GATE-SOURCE VOLTAGE (V) Figure 2 Typical Transfer Characteristics 4.5 50 ID = 15A 45 40 ID = 12A 35 30 25 20 15 10 2 4 6 8 10 12 14 16 18 20 VGS, GATE-SOURCE VOLTAGE (V) Figure 4 Typical Drain-Source On-Resistance vs. Gate-Source Voltage 2.2 VGS = 10V TA = 175°C 2 RDS(ON), DRAIN-SOURCE ON-RESISTANCE (NORMALIZED) RDS(ON), DRAIN-SOURCE ON-RESISTANCE () 0.0 TA = 150°C TA = 125°C TA = 85°C TA = 25°C TA = -55°C O (S D 0 5 10 15 20 25 ID, DRAIN CURRENT (A) Figure 5 Typical On-Resistance vs. Drain Current and Temperature DMNH6021SPS Document number: DS37685 Rev. 2 - 2 1.8 1.6 VGS = 4.5V ID = 12A 1.4 1.2 1 0.8 0.6 R 0.005 VGS = 10V ID = 15A 30 3 of 7 www.diodes.com 0.4 -50 -25 0 25 50 75 100 125 150 175 TJ, JUNCTION TEMPERATURE (C) Figure 6 On-Resistance Variation with Temperature June 2016 © Diodes Incorporated 2.5 0.05 2.3 0.01 ) V ( E G A T L O V D L O H S E R H T E T A G , )h 0.005 V 0.7 0.045 VGS = 4.5V ID = 12A 0.04 0.035 0.03 0.025 VGS = 10V ID = 15A 0.02 0.015 VGS(TH), GATE THRESHOLD VOLTAGE (V) RDS(ON), DRAIN-SOURCE ON-RESISTANCE () DMNH6021SPS (tS G 0 -50 ID = 1mA 1.7 ID = 250µA 1.5 1.3 1.1 0.9 -25 0 25 50 75 100 125 150 175 TJ , JUNCTION TEMPERATURE (C) Figure 8 Gate Threshold Variation vs. Junction Temperature 1400 EAS, AVALANCHE ENERGY (mJ) 30 25 20 15 175°C TA = 175°C T A = 85°C 85°C 10 TA = 150°C 150°C S ISI ,,SOURCE SOURCECURRENT CURRENT(A) (A) 1.9 0.5 -50 -25 0 25 50 75 100 125 150 175 TJ, JUNCTION TEMPERATURE (C) Figure 7 On-Resistance Variation with Temperature T A = 25°C 25°C 125°C TA = 125°C 5 T A = -55°C -55°C 0 2.1 0 0.3 0.6 0.9 1.2 V SD, SOURCE-DRAIN VOLTAGE (V) Figure 9 Diode Forward Voltage vs. Current 1300 1200 1100 1000 900 I D = 6A 800 700 600 ID = 10A 500 400 300 200 I D = 15A 100 0 25 1.5 50 75 100 125 150 TJ, Junction Temperature (°C) (oC) TJ, JUNCTION TEMPERATURE Figure 10 Avalanche Energy 175 V GS GATE THRESHOLD VOLTAGE (V) 10 8 4 2 0 DMNH6021SPS Document number: DS37685 Rev. 2 - 2 4 of 7 www.diodes.com VDS = 30V ID = 20A 6 0 4 8 12 16 Qg, TOTAL GATE CHARGE (nC) Figure 11 Gate Charge 20 June 2016 © Diodes Incorporated DMNH6021SPS DMNH6021SPS Document number: DS37685 Rev. 2 - 2 5 of 7 www.diodes.com June 2016 © Diodes Incorporated DMNH6021SPS Package Outline Please see http://www.diodes.com/package-outlines.html for the latest version. PowerDI5060-8 D Detail A D1 0(4X) c A1 E1 E e 01 (4X) 1 b (8X) e/2 1 L b2 (4X) D3 A K D2 E3 E2 b3 (4X) M M1 Detail A L1 G PowerDI5060-8 Dim Min Max Typ A 0.90 1.10 1.00 A1 0.00 0.05 b 0.33 0.51 0.41 b2 0.200 0.350 0.273 b3 0.40 0.80 0.60 c 0.230 0.330 0.277 D 5.15 BSC D1 4.70 5.10 4.90 D2 3.70 4.10 3.90 D3 3.90 4.30 4.10 E 6.15 BSC E1 5.60 6.00 5.80 E2 3.28 3.68 3.48 E3 3.99 4.39 4.19 e 1.27 BSC G 0.51 0.71 0.61 K 0.51 L 0.51 0.71 0.61 L1 0.100 0.200 0.175 M 3.235 4.035 3.635 M1 1.00 1.40 1.21 Θ 10° 12° 11° Θ1 6° 8° 7° All Dimensions in mm Suggested Pad Layout Please see http://www.diodes.com/package-outlines.html for the latest version. PowerDI5060-8 X4 Y2 X3 Y3 Y5 Y1 X2 Y4 X1 Y7 Y6 G1 C X DMNH6021SPS Document number: DS37685 Rev. 2 - 2 G Y(4x) 6 of 7 www.diodes.com Dimensions C G G1 X X1 X2 X3 X4 Y Y1 Y2 Y3 Y4 Y5 Y6 Y7 Value (in mm) 1.270 0.660 0.820 0.610 4.100 0.755 4.420 5.610 1.270 0.600 1.020 0.295 1.825 3.810 0.180 6.610 June 2016 © Diodes Incorporated DMNH6021SPS IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated website, harmless against all damages. Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized application. Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings noted herein may also be covered by one or more United States, international or foreign trademarks. This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the final and determinative format released by Diodes Incorporated. LIFE SUPPORT Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein: A. Life support devices or systems are devices or systems which: 1. are intended to implant into the body, or 2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness. Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems. Copyright © 2016, Diodes Incorporated www.diodes.com DMNH6021SPS Document number: DS37685 Rev. 2 - 2 7 of 7 www.diodes.com June 2016 © Diodes Incorporated