AP3601N
Halogen-Free Product
Advanced Power
Electronics Corp.
P-CHANNEL ENHANCEMENT MODE
POWER MOSFET
▼ Simple Drive Requirement
D
▼ Small Package Outline
▼ Surface Mount Device
S
▼ RoHS Compliant & Halogen-Free
BVDSS
-30V
RDS(ON)
95mΩ
ID
-2.9A
SOT-23S G
D
Description
AP3601 series are from Advanced Power innovated design and
silicon process technology to achieve the lowest possible onresistance and fast switching performance. It provides the
designer with an extreme efficient device for use in a wide range
of power applications.
The SOT-23S package is widely preferred for commercialindustrial surface mount applications and suited for low voltage
applications such as DC/DC converters.
G
S
Absolute Maximum Ratings@Tj=25oC(unless otherwise specified)
Parameter
Symbol
.
Rating
Units
VDS
Drain-Source Voltage
- 30
V
VGS
Gate-Source Voltage
+25
V
-2.9
A
-2.3
A
ID@TA=25℃
ID@TA=70℃
3
Drain Current , VGS @ 10V
3
Drain Current , VGS @ 10V
1
IDM
Pulsed Drain Current
-10
A
PD@TA=25℃
Total Power Dissipation
1.25
W
TSTG
Storage Temperature Range
-55 to 150
℃
TJ
Operating Junction Temperature Range
-55 to 150
℃
Thermal Data
Symbol
Rthj-amb
Parameter
Maximum Thermal Resistance, Junction-ambient
Data and specifications subject to change without notice
3
Value
Unit
100
℃/W
1
201410241AP
AP3601N
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol
BVDSS
RDS(ON)
Parameter
Test Conditions
Drain-Source Breakdown Voltage
Static Drain-Source On-Resistance
Min.
Typ.
-30
-
-
V
VGS=-10V, ID=-2A
-
-
95
mΩ
VGS=-4.5V, ID=-1A
-
-
150
mΩ
VGS=0V, ID=-250uA
2
Max. Units
VGS(th)
Gate Threshold Voltage
VDS=VGS, ID=-250uA
-1
-
-3
V
gfs
Forward Transconductance
VDS=-10V, ID=-2A
-
6
-
S
IDSS
Drain-Source Leakage Current
VDS=-24V, VGS=0V
-
-
-30
uA
IGSS
Gate-Source Leakage
VGS=+20V, VDS=0V
-
-
+100
nA
Qg
Total Gate Charge
ID=-2A
-
4
6.5
nC
Qgs
Gate-Source Charge
VDS=-15V
-
1
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=-4.5V
-
2
-
nC
td(on)
Turn-on Delay Time
VDS=-15V
-
6
-
ns
tr
Rise Time
ID=-1A
-
9
-
ns
td(off)
Turn-off Delay Time
RG=3.3Ω
-
20
-
ns
tf
Fall Time
VGS=-10V
-
4
-
ns
Ciss
Input Capacitance
VGS=0V
-
310
500
pF
Coss
Output Capacitance
VDS=-25V
-
60
-
pF
Crss
Reverse Transfer Capacitance
f=1.0MHz
-
55
-
pF
Rg
Gate Resistance
f=1.0MHz
-
9
18
Ω
Min.
Typ.
.
Source-Drain Diode
Symbol
Parameter
2
Test Conditions
Max. Units
VSD
Forward On Voltage
IS=-1.2A, VGS=0V
-
-
-1.2
V
trr
Reverse Recovery Time
IS=-2A, VGS=0V,
-
16
-
ns
Qrr
Reverse Recovery Charge
dI/dt=100A/µs
-
7
-
nC
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse test
3.Surface mounted on 1 in2 copper pad of FR4 board, t < 10s ; 300℃/W when mounted on min. copper pad.
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
2
AP3601N
12
30
T A = 150 o C
-10V
-7.0V
-6.0V
-5.0V
-10V
-7.0V
-6.0V
-5.0V
10
-ID , Drain Current (A)
-ID , Drain Current (A)
T A =25 o C
20
V G = -4.0V
10
8
V G = -4.0V
65mΩ
6
4
2
0
0
0
2
4
6
8
0
-V DS , Drain-to-Source Voltage (V)
1
2
3
4
-V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
1.6
140
I D = -1A
I D = -2A
V GS = -10V
T A =25 o C
RDS(ON) (Ω )
100
.
Normalized RDS(ON)
1.4
120
1.2
1
80
0.8
0.6
60
2
4
6
8
-100
10
-50
0
50
100
150
T j , Junction Temperature ( o C)
-V GS , Gate-to-Source Voltage (V)
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
2
6
I D = -250uA
5
Normalized VGS(th)
1.5
-IS(A)
4
T j =150 o C
3
T j =25 o C
2
1
0.5
2.01E+08
1
0
0
0
0.4
0.8
1.2
-V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
1.6
-100
-50
0
50
T j , Junction Temperature (
100
o
150
C)
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
3
AP3601N
f=1.0MHz
10
500
8
400
65mΩ
C (pF)
-VGS , Gate to Source Voltage (V)
I D = -2A
V DS = -15V
6
300
4
200
2
100
0
C iss
C oss
C rss
0
0
2
4
6
1
8
5
Q G , Total Gate Charge (nC)
Fig 7. Gate Charge Characteristics
13
17
21
25
29
Fig 8. Typical Capacitance Characteristics
1
10
Operation in this area
limited by RDS(ON)
100us
1ms
10ms
1
100ms
0.1
T A =25 o C
Single Pulse
1s
DC
.
Normalized Thermal Response (Rthja)
100
-ID (A)
9
-V DS , Drain-to-Source Voltage (V)
DUTY=0.5
0.2
0.1
PDM
0.1
t
T
0.05
0.02
Duty factor = t/T
Peak Tj = PDM x Rthja + T a
0.01
Rthja = 300℃/W
Single Pulse
0.01
0.01
0.01
0.1
1
10
100
0.0001
0.001
0.01
-V DS , Drain-to-Source Voltage (V)
Fig 9. Maximum Safe Operating Area
0.1
1
10
100
1000
t , Pulse Width (s)
Fig 10. Effective Transient Thermal Impedance
VG
VDS
90%
QG
-4.5V
QGS
QGD
10%
VGS
td(on) tr
Charge
Q
td(off) tf
Fig 11. Switching Time Waveform
Fig 12. Gate Charge Waveform
4
AP3601N
MARKING INFORMATION
Part Number : A01
A01SS
Date Code : SS
SS:2004,2008,2012…
SS:2003,2007,2011…
SS:2002,2006,2010…
SS:2001,2005,2009…
.
5