DMT3004LPS Green 30V N-CHANNEL ENHANCEMENT MODE MOSFET PowerDI Product Summary NEW PRODUCT INFORMATION ADVANCEINFORMATION ADVANCED BVDSS Features and Benefits RDS(ON) Max ID Max TC = +25°C 3.8mΩ @ VGS = 10V 140A 6mΩ @ VGS = 4.5V 110A Low RDS(ON) – Minimizes On-State Losses Excellent Qgd x RDS(ON) Product (FOM) Advanced Technology for DC-DC Converters Small Form Factor Thermally Efficient Package Enables Higher Density End Products 100% Unclamped Inductive Switching – Ensures More Reliability Lead-Free Finish; RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability 30V Description and Applications Mechanical Data This MOSFET is designed to minimize the on-state resistance (RDS(ON)), yet maintain superior switching performance, making it Case: PowerDI 5060-8 Case Material: Molded Plastic, "Green" Molding Compound. UL Flammability Classification Rating 94V-0 ideal for high-efficiency power management applications. ® Moisture Sensitivity: Level 1 per J-STD-020 Backlighting Terminal Connections Indicator: See Diagram Power Management Functions DC-DC Converters Terminals: Finish – Matte Tin Annealed over Copper Leadframe. Solderable per MIL-STD-202, Method 208 Weight: 0.097 grams (Approximate) ® PowerDI 5060-8 S D S D S D G D Pin1 Top View Bottom View Internal Schematic Top View Pin Configuration Ordering Information (Note 4) Part Number DMT3004LPS-13 Notes: Case ® PowerDI 5060-8 Packaging 2,500/Tape & Reel 1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. All applicable RoHS exemptions applied. 2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 4. For packaging details, go to our website at http://www.diodes.com/products/packages.html. Marking Information D D D D = Manufacturer’s Marking T3004LS = Product Type Marking Code YYWW = Date Code Marking YY = Year (ex: 15 = 2015) WW = Week (01 to 53) T3004LS YY WW S S S G PowerDI is a registered trademark of Diodes Incorporated. DMT3004LPS Document number: DS37045 Rev. 4 - 2 1 of 7 www.diodes.com January 2016 © Diodes Incorporated DMT3004LPS Maximum Ratings (@TA = +25°C, unless otherwise specified.) Drain-Source Voltage Characteristic Symbol VDSS Gate-Source Voltage VGSS NEW PRODUCT INFORMATION ADVANCEINFORMATION ADVANCED Continuous Drain Current, VGS = 10V (Note 5) Continuous Drain Current, VGS = 10V Maximum Continuous Body Diode Forward Current (Note 5) Maximum Continuous Body Diode Forward Current Maximum Body Diode Forward Pulse Current Pulsed Drain Current (10µs Pulse, Duty Cycle = 1%) Avalanche Current, L=0.3mH Avalanche Energy, L=0.3mH TA = +25°C TA = +70°C TC = +25°C TC = +70°C TA = +25°C TC = +25°C TC = +25°C Value 30 +20 -16 21 17 ID Unit V V A 140 110 3 48 180 180 27 110 A A A A A mJ Value Unit ID IS IS ISM IDM IAS EAS A Thermal Characteristics Characteristic Symbol TA = +25°C (Note 5) TC = +25°C Steady State Total Power Dissipation Thermal Resistance, Junction to Ambient (Note 5) Thermal Resistance, Junction to Case Operating and Storage Temperature Range 2.7 PD 113 47 1.1 -55 to +150 RθJA RθJC TJ, TSTG W °C/W °C Electrical Characteristics (TA = +25°C, unless otherwise specified.) Characteristic OFF CHARACTERISTICS (Note 6) Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Symbol Min Typ Max Unit BVDSS IDSS 30 — — — — 1 V μA IGSS — — ±100 nA ON CHARACTERISTICS (Note 6) Gate Threshold Voltage VGS(TH) RDS(ON) VSD — — — 0.70 3 3.8 6 1 V Static Drain-Source On-Resistance 1 — — — Ciss Coss Crss Rg Qg Qgs Qgd tD(ON) tR tD(OFF) tF tRR QRR — — — — — — — — — — — — — 2,370 1,360 240 0.7 43.7 6.9 8 6.2 4.2 21 8 25 37 — — — — — — — — — — — — — Gate-Source Leakage Diode Forward Voltage DYNAMIC CHARACTERISTICS (Note 7) Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance Total Gate Charge (VGS = 10V) Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge Notes: mΩ V Test Condition VGS = 0V, ID = 250μA VDS = 24V, VGS = 0V VGS = +20V, VDS = 0V VGS = -16V, VDS = 0V VDS = VGS, ID = 250μA VGS = 10V, ID = 20A VGS = 4.5V, ID = 7A VGS = 0V, IS = 1A pF VDS = 15V, VGS = 0V, f = 1MHz Ω VDS = 0V, VGS = 0V, f = 1MHz nC VDS = 15V, ID = 20A ns VDD = 15V, VGS = 10V, RG = 3Ω, RL = 0.75Ω ns nC IF = 15A, di/dt = 500A/μs 5. RθJA is determined with the device mounted on FR-4 substrate PC board, 2oz copper, with 1in. square copper plate. RθJC is guaranteed by design while RθJA is determined by the user’s board design. 6. Short duration pulse test used to minimize self-heating effect. 7. Guaranteed by design. Not subject to product testing. DMT3004LPS Document number: DS37045 Rev. 4 - 2 2 of 7 www.diodes.com January 2016 © Diodes Incorporated DMT3004LPS 30 30.0 VGS = 10.0V ID, DRAIN CURRENT (A) ID, DRAIN CURRENT (A) 25 VGS = 3.0V VGS = 4.0V VGS = 3.5V 20.0 15.0 VGS = 2.8V 10.0 5.0 20 15 150℃ 85℃ 25℃ 5 VGS = 2.5V VGS = 2.2V -55℃ 0 0 0.5 1 1.5 0 2 0.5 VGS = 4.5V 0.005 0.004 VGS = 10V 0.003 0.002 0 5 10 15 20 25 30 RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω) 0.007 0.006 1.5 2 2.5 3 3.5 4 4.5 5 0.1 0.09 0.08 0.07 0.06 0.05 0.04 0.03 0.02 ID = 20A 0.01 0 0 2 4 6 8 10 12 14 16 VGS, GATE-SOURCE VOLTAGE (V) Figure 4. Typical Transfer Characteristic ID, DRAIN-SOURCE CURRENT (A) Figure 3. Typical On-Resistance vs. Drain Current and Gate Voltage RDS(ON), DRAIN-SOURCE ON-RESISTANCE (NORMALIZED) 0.006 VGS = 10V 150℃ 0.005 125℃ 0.004 85℃ 25℃ 0.003 1 VGS, GATE-SOURCE VOLTAGE (V) Figure 2. Typical Transfer Characteristic VDS, DRAIN-SOURCE VOLTAGE (V) Figure 1. Typical Output Characteristic RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω) 125℃ 10 0.0 RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω) NEW PRODUCT INFORMATION ADVANCEINFORMATION ADVANCED VDS = 5V VGS = 4.5V 25.0 -55℃ 0.002 2.5 2 VGS = 10V, ID = 20A 1.5 VGS = 4.5V, ID = 15A 1 0.5 0 0 5 10 15 20 25 30 ID, DRAIN CURRENT (A) Figure 5. Typical On-Resistance vs. Drain Current and Junction Temperature DMT3004LPS Document number: DS37045 Rev. 4 - 2 3 of 7 www.diodes.com -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (℃) Figure 6. On-Resistance Variation with Junction Temperature January 2016 © Diodes Incorporated VGS(TH), GATE THRESHOLD VOLTAGE (V) RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω) 2.5 0.008 0.007 VGS = 4.5V, ID = 15A 0.006 0.005 0.004 0.003 VGS = 10V, ID = 20A 0.002 -50 -25 0 25 50 75 100 125 2 ID = 1mA 1.5 ID = 250μA 1 0.5 0 -50 150 20 0 25 50 75 100 125 150 10000 f=1MHz CT, JUNCTION CAPACITANCE (pF) VGS = 0V IS, SOURCE CURRENT (A) -25 TJ, JUNCTION TEMPERATURE (℃) Figure 8. Gate Threshold Variation vs. Junction Temperature TJ, JUNCTION TEMPERATURE (℃) Figure 9. On-Resistance Variation with Junction Temperature 15 10 TJ = 125oC TJ = 85oC TJ = 150oC 5 TJ = 25oC Ciss 1000 Coss 100 Crss TJ = -55oC 10 0 0 0.3 0.6 0.9 1.2 0 1.5 5 10 15 20 25 30 VDS, DRAIN-SOURCE VOLTAGE (V) VSD, SOURCE-DRAIN VOLTAGE (V) Figure 9. Diode Forward Voltage vs. Current Figure 10. Typical Junction Capacitance 1000 10 RDS(ON) Limited ID, DRAIN CURRENT (A) 8 VGS (V) NEW PRODUCT INFORMATION ADVANCEINFORMATION ADVANCED DMT3004LPS 6 4 VDS = 15V, ID = 20A PW =1ms PW =100µs 100 PW =10ms PW =100ms PW =1s 10 PW =10s DC 1 2 TJ(Max) = 150℃ TC = 25℃ Single Pulse DUT on Infinite Heatsink VGS= 10V 0.1 0 0 5 10 15 20 25 30 35 40 45 50 Document number: DS37045 Rev. 4 - 2 1 10 100 VDS, DRAIN-SOURCE VOLTAGE (V) Figure 12. SOA, Safe Operation Area Qg (nC) Figure 11. Gate Charge DMT3004LPS 0.1 4 of 7 www.diodes.com January 2016 © Diodes Incorporated DMT3004LPS r(t), TRANSIENT THERMAL RESISTANCE NEW PRODUCT INFORMATION ADVANCEINFORMATION ADVANCED 1 D=0.7 D=0.5 D=0.3 D=0.9 0.1 D=0.1 D=0.05 D=0.02 0.01 D=0.01 RθJC(t) = r(t) * RθJC RθJC = 1.08℃/W Duty Cycle, D = t1 / t2 D=0.005 D=Single Pulse 0.001 1E-06 1E-05 0.0001 0.001 0.01 0.1 1 10 100 1000 t1, PULSE DURATION TIME (sec) Figure 13. Transient Thermal Resistance DMT3004LPS Document number: DS37045 Rev. 4 - 2 5 of 7 www.diodes.com January 2016 © Diodes Incorporated DMT3004LPS Package Outline Dimensions Please see AP02001 at http://www.diodes.com/_files/datasheets/ap02001.pdf for the latest version. POWERDI®5060-8 D Detail A NEW PRODUCT INFORMATION ADVANCEINFORMATION ADVANCED D1 0(4X) c A1 E1 E e 01 (4X) 1 b (8X) e/2 1 L b2 (4X) D3 A K D2 E3 E2 M b3 (4X) M1 Detail A L1 G POWERDI®5060-8 Dim Min Max Typ A 0.90 1.10 1.00 A1 0.00 0.05 b 0.33 0.51 0.41 b2 0.200 0.350 0.273 b3 0.40 0.80 0.60 c 0.230 0.330 0.277 D 5.15 BSC D1 4.70 5.10 4.90 D2 3.70 4.10 3.90 D3 3.90 4.30 4.10 E 6.15 BSC E1 5.60 6.00 5.80 E2 3.28 3.68 3.48 E3 3.99 4.39 4.19 e 1.27 BSC G 0.51 0.71 0.61 K 0.51 L 0.51 0.71 0.61 L1 0.100 0.200 0.175 M 3.235 4.035 3.635 M1 1.00 1.40 1.21 Θ 10° 12° 11° Θ1 6° 8° 7° All Dimensions in mm Suggested Pad Layout Please see AP02001 at http://www.diodes.com/_files/datasheets/ap02001.pdf for the latest version. POWERDI®5060-8 X4 Y2 X3 Y3 Y5 Y1 X2 Y4 X1 Y7 Y6 G1 C X DMT3004LPS Document number: DS37045 Rev. 4 - 2 G Dimensions C G G1 X X1 X2 X3 X4 Y Y1 Y2 Y3 Y4 Y5 Y6 Y7 Value (in mm) 1.270 0.660 0.820 0.610 4.100 0.755 4.420 5.610 1.270 0.600 1.020 0.295 1.825 3.810 0.180 6.610 Y(4x) 6 of 7 www.diodes.com January 2016 © Diodes Incorporated DMT3004LPS IMPORTANT NOTICE NEW PRODUCT INFORMATION ADVANCEINFORMATION ADVANCED DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. 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