DMT3020LFDF 30V N-CHANNEL ENHANCEMENT MODE MOSFET Features RDS(ON) max ID max TA = +25°C 17mΩ @ VGS = 10V 8.4A 28mΩ @ VGS = 4.5V 6.8A V(BR)DSS 30V 0.6mm Profile – Ideal for Low Profile Applications PCB Footprint of 4mm2 Low Gate Threshold Voltage Low On-Resistance Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) Description Mechanical Data This new generation MOSFET is designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, Case: U-DFN2020-6 (Type F) making it ideal for high efficiency power management applications. Case Material: Molded Plastic, ―Green‖ Molding Compound. UL Flammability Classification Rating 94V-0 Applications Moisture Sensitivity: Level 1 per J-STD-020 General Purpose Interfacing Switch Power Management Functions Terminals: Finish – NiPdAu over Copper Leadframe. Solderable per MIL-STD-202, Method 208 Weight: 0.0065 grams (Approximate) U-DFN2020-6 U-DFN2020-6(Type F) D G S Pin1 Top View Pin Out Bottom View Bottom View Equivalent Circuit Ordering Information (Note 4) Part Number DMT3020LFDF-7 DMT3020LFDF-13 Notes: Case U-DFN2020-6 (Type F) U-DFN2020-6 (Type F) Packaging 3,000/Tape & Reel 10,000/Tape & Reel 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green‖ products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 4. For packaging details, go to our website at http://www.diodes.com/products/packages.html. Marking Information U-DFN2020-6 (Type F) Y1 Date Code Key Year Code Month Code 2015 C Jan 1 2016 D Feb 2 DMT3020LFDF Datasheet number: DS38243 Rev. 3 - 2 Mar 3 2017 E Apr 4 Y1 = Product Type Marking Code YM = Date Code Marking Y = Year (ex: C = 2015) M = Month (ex: 9 = September) YM ADVANCE INFORMATION ADVANCED INFORMATION Product Summary 2018 F May 5 Jun 6 1 of 7 www.diodes.com 2019 G Jul 7 2020 H Aug 8 Sep 9 2021 I Oct O 2022 J Nov N Dec D May 2016 © Diodes Incorporated DMT3020LFDF Maximum Ratings (@TA = +25°C, unless otherwise specified.) Characteristic Symbol VDSS VGSS ADVANCE INFORMATION ADVANCED INFORMATION Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (Note 6) VGS = 10.0V Steady State Continuous Drain Current (Note 6) VGS = 4.5V Steady State TA = +25°C TA = +70°C TA = +25°C TA = +70°C Value 30 ±20 8.4 6.7 ID A 6.8 5.4 40 2 11.4 6.5 ID Pulsed Drain Current (10µs pulse, duty cycle = 1%) Maximum Body Diode Continuous Current (Note 6) Avalanche Current (Note 7) L = 0.1mH Avalanche Energy (Note 7) L = 0.1mH Unit V V IDM IS IAS EAS A A A A mJ Thermal Characteristics TA = +25°C TA = +70°C Steady State Total Power Dissipation (Note 5) Thermal Resistance, Junction to Ambient (Note 5) Thermal Resistance, Junction to Ambient (Note 6) Operating and Storage Temperature Range Electrical Characteristics RJA TA = +25°C TA = +70°C Steady State Total Power Dissipation (Note 6) 0.7 0.4 180 1.8 1.1 70 -55 to +150 PD PD RJA TJ, TSTG W °C/W W °C/W °C (@TA = +25°C, unless otherwise specified.) Characteristic OFF CHARACTERISTICS (Note 8) Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current TJ = +25°C Gate-Source Leakage ON CHARACTERISTICS (Note 8) Gate Threshold Voltage Symbol Min Typ Max Unit BVDSS IDSS IGSS 30.0 — — — — — — 1.0 ±100 V A nA VGS = 0V, ID = 250μA VDS = 24V, VGS = 0V VGS = ±20V, VDS = 0V VGS(TH) 1.0 RDS(ON) — mΩ VSD — 2.5 17 28 1.2 V Static Drain-Source On-Resistance — 13 21 — VDS = VGS, ID = 250μA VGS = 10V, ID = 9.0A VGS = 4.5V, ID = 7.0A VGS = 0V, IS = 2A Ciss Coss Crss Rg Qg Qg Qgs Qgd tD(ON) tR tD(OFF) tF tRR QRR — — — — — — — — — — — — — — 393 173 27 1.1 7.0 3.6 0.9 1.5 1.8 1.9 7.5 2.4 10 2.6 — — — — — — — — — — — — — — pF pF pF Ω nC nC nC nC ns ns ns ns ns nC Diode Forward Voltage DYNAMIC CHARACTERISTICS (Note 9) Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance Total Gate Charge (VGS = 10V) Total Gate Charge (VGS = 4.5V) Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Reverse Recovery Time Reverse Recovery Charge Notes: V Test Condition VDS = 15V, VGS = 0V, f = 1.0MHz VDS = 0V, VGS = 0V, f = 1.0MHz VDD = 15V, ID = 9A VDD = 15V, VGS = 10V, RG = 6Ω, ID = 9A IF = 9A, dI/dt = 100A/μs 5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout. 6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate. 7. IAS and EAS rating are based on low frequency and duty cycles to keep T J = +25°C. 8. Short duration pulse test used to minimize self-heating effect. 9. Guaranteed by design. Not subject to product testing. DMT3020LFDF Datasheet number: DS38243 Rev. 3 - 2 2 of 7 www.diodes.com May 2016 © Diodes Incorporated DMT3020LFDF 15 30.0 VGS = 10.0V 20.0 ID, DRAIN CURRENT (A) ID, DRAIN CURRENT (A) 12 VGS = 4.5V VGS = 4.0V VGS = 3.0V 15.0 10.0 VGS = 2.5V 5.0 9 6 125℃ 85℃ 3 150℃ VGS = 2.2V 25℃ -55℃ 0 0.0 1 2 3 4 VDS, DRAIN-SOURCE VOLTAGE (V) Figure 1. Typical Output Characteristic 0.028 0.026 0.024 0.022 VGS = 4.5V 0.02 0.018 0.016 0.014 VGS = 10V 0.012 0.01 0 5 10 15 20 25 30 ID, DRAIN-SOURCE CURRENT (A) Figure 3. Typical On-Resistance vs. Drain Current and Gate Voltage VGS = 10V 150℃ 0.02 125℃ 0.018 85℃ 0.016 0.014 25℃ 0.012 -55℃ 0.01 0.008 0 0.06 ID = 9.0A ID = 7.0A 0.04 0.02 0 4 8 12 16 VGS, GATE-SOURCE VOLTAGE (V) Figure 4. Typical Transfer Characteristic 20 1.8 VGS = 10V, ID = 9.0A 1.6 1.4 1.2 VGS = 4.5V, ID = 7.0A 1 0.8 0.6 10 15 20 25 30 ID, DRAIN CURRENT (A) Figure 5. Typical On-Resistance vs. Drain Current and Junction Temperature Datasheet number: DS38243 Rev. 3 - 2 3 0.08 5 DMT3020LFDF 1.5 2 2.5 VGS, GATE-SOURCE VOLTAGE (V) Figure 2. Typical Transfer Characteristic 0.1 0 RDS(ON), DRAIN-SOURCE ON-RESISTANCE (NORMALIZED) 0.024 0.022 1 5 RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω) RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω) 0 RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω) ADVANCE INFORMATION ADVANCED INFORMATION VDS = 5V VGS = 6.0V 25.0 3 of 7 www.diodes.com -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (℃) Figure 6. On-Resistance Variation with Junction Temperature May 2016 © Diodes Incorporated VGS(TH), GATE THRESHOLD VOLTAGE (V) RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω) 0.04 0.03 VGS = 4.5V, ID = 7.0A 0.02 VGS = 10V, ID = 9.0A 0.01 0 -50 1.7 ID = 1mA 1.4 1.1 ID = 250μA 0.8 0.5 0.2 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (℃) Figure 8. Gate Threshold Variation vs. Junction Temperature 1000 f=1MHz CT, JUNCTION CAPACITANCE (pF) VGS = 0V 25 IS, SOURCE CURRENT (A) 2 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (℃) Figure 7. On-Resistance Variation with Junction Temperature 30 20 15 TJ = 85oC 10 TJ = 125oC TJ = 25oC 5 TJ = 150oC TJ = -55oC Ciss Coss 100 Crss 10 0 0 0.3 0.6 0.9 1.2 VSD, SOURCE-DRAIN VOLTAGE (V) Figure 9. Diode Forward Voltage vs. Current 0 1.5 10 5 10 15 20 25 VDS, DRAIN-SOURCE VOLTAGE (V) Figure 10. Typical Junction Capacitance 30 100 RDS(ON) Limited ID, DRAIN CURRENT (A) 8 6 VGS (V) ADVANCE INFORMATION ADVANCED INFORMATION DMT3020LFDF 4 VDS = 15V, ID = 9A 2 0 10 1 0.1 0.01 0 2 4 6 8 Qg (nC) Figure 11. Gate Charge DMT3020LFDF Datasheet number: DS38243 Rev. 3 - 2 PW =100µs 4 of 7 www.diodes.com PW =1ms PW =10ms PW =100ms PW =1s TJ(Max) = 150℃ TC = 25℃ Single Pulse DUT on 1*MRP Board VGS = 10V 0.01 PW =10s DC 0.1 1 10 VDS, DRAIN-SOURCE VOLTAGE (V) Figure 12. SOA, Safe Operation Area 100 May 2016 © Diodes Incorporated DMT3020LFDF D=0.7 D=0.5 r(t), TRANSIENT THERMAL RESISTANCE ADVANCE INFORMATION ADVANCED INFORMATION 1 D=0.3 D=0.9 0.1 D=0.1 D=0.05 D=0.02 0.01 D=0.01 RθJA(t) = r(t) * RθJA RθJA = 147℃/W Duty Cycle, D = t1 / t2 D=0.005 D=Single Pulse 0.001 1E-05 DMT3020LFDF Datasheet number: DS38243 Rev. 3 - 2 0.0001 0.001 0.01 0.1 1 10 t1, PULSE DURATION TIME (sec) Figure 13. Transient Thermal Resistance 5 of 7 www.diodes.com 100 1000 May 2016 © Diodes Incorporated DMT3020LFDF Package Outline Dimensions Please see http://www.diodes.com/package-outlines.html for the latest version. ADVANCE INFORMATION ADVANCED INFORMATION U-DFN2020-6 (Type F) A1 A A3 Seating Plane D e3 e4 k2 D2a E z2 D2 E2a E2 k1 e2 k z1 e z(4x) L b U-DFN2020-6 (Type F) Dim Min Max Typ A 0.57 0.63 0.60 A1 0.00 0.05 0.03 A3 0.15 b 0.25 0.35 0.30 D 1.95 2.05 2.00 D2 0.85 1.05 0.95 D2a 0.33 0.43 0.38 E 1.95 2.05 2.00 E2 1.05 1.25 1.15 E2a 0.65 0.75 0.70 e 0.65 BSC e2 0.863 BSC e3 0.70 BSC e4 0.325 BSC k 0.37 BSC k1 0.15 BSC k2 0.36 BSC L 0.225 0.325 0.275 z 0.20 BSC z1 0.110 BSC z2 0.20 BSC All Dimensions in mm Suggested Pad Layout Please see http://www.diodes.com/package-outlines.html for the latest version. U-DFN2020-6 (Type F) X3 C Y3 Y X Y2 Y1 Dimensions Y4 X1 Pin1 C X X1 X2 X3 Y Y1 Y2 Y3 Y4 Value (in mm) 0.650 0.400 0.480 0.950 1.700 0.425 0.800 1.150 1.450 2.300 X2 DMT3020LFDF Datasheet number: DS38243 Rev. 3 - 2 6 of 7 www.diodes.com May 2016 © Diodes Incorporated DMT3020LFDF ADVANCE INFORMATION ADVANCED INFORMATION IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. 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LIFE SUPPORT Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein: A. Life support devices or systems are devices or systems which: 1. are intended to implant into the body, or 2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness. Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems. Copyright © 2016, Diodes Incorporated www.diodes.com DMT3020LFDF Datasheet number: DS38243 Rev. 3 - 2 7 of 7 www.diodes.com May 2016 © Diodes Incorporated